Pb掺杂SnO2压敏电阻的晶粒尺寸效应

研究了Pb3O4对(Co，Nb)掺杂SnO2压敏材料电学性质的影响，当Pb3O4的含量从0．00增加到0．75％(摩尔分数，下同)时，(Co，Nb)掺杂SnO2压敏电阻的击穿电压从426V／mm迅速减小到160V／mm，40Hz时的相对介电常数从1240迅速增加到2760，这说明Pb3O4是调控SnO2压敏材料击穿电压和介电常数的敏感添加剂，晶界势垒高度测量表明，在实验范围内Pb的含量对势垒高度的影响很小，随着Pb含量的增加，SnO2的晶粒尺寸的迅速长大是击穿电压迅速减小和介电常数迅速增大的主要原因，对样品的复阻抗进行了测量，发现未掺杂Pb的样品具有最低的晶界电阻，而掺杂0．50％Pb3O4的样品具有最高的晶界电阻，提出了一个修正的缺陷势垒模型，指出了替代Sn的受主不应当处于晶界上，而应处于耗尽层的Sn的晶格位置。     

Cr2O3对(Co,Ta)掺杂的SnO2压敏电阻电学特性的影响

研究了Cr对(Co,Ta)掺杂的SnO2压敏材料电学性质的影响.当Cr2O3的含量从0增加到0.15mol%时,(Co,Ta)掺杂SnO2压敏电阻的击穿电压从206V/mm增加到493V/mm;1kHz时的相对介电常数从1968猛降至498;晶界势垒高度分析表明,SnO2晶粒尺寸的迅速减小是样品击穿电压增高、相对介电常数急剧降低和电阻率迅速增大的主要原因.对Cr含量增加引起SnO2晶粒减小的原因进行了解释.掺杂0.15mol% Cr2O3的SnO2压敏电阻非线性系数为24,击穿电压达498V/mm,在高压保护领域有很好的应用前景.     

Ag掺杂对新型SnO2压敏材料的电学性质的影响

烧渗银电极对压敏电阻的性能是有很大影响的.为了弄清Ag对(Co、Nb)掺杂的新型SnO2压敏材料电学性质的影响,做了组分为SnO2+1.50%CoCl2*6H2O+0.10%Nb2O5+x%Ag2O(x=0.00、0.02、0.50和1.00)的系统实验.当AgO的含量从0.00增加到1mol%时,(Co, Nb)掺杂SnO2压敏电阻的击穿电压从349V/mm增大到429V/mm,1kHz时的相对介电常数从2240减小到1560.晶界势垒高度测量揭示,SnO2的晶粒尺寸的迅速减小是击穿电压急剧增高和介电常数迅速减小的主要原因.对Ag掺杂量增加引起SnO2晶粒减小的根源进行了解释.     

Sr掺杂对WO3-CeO2低压压敏陶瓷电性能的影响

制备了不同掺量SrCO3的WO3-CeO2系列低压压敏陶瓷．研究结果表明：随着SrCO3掺量的增加，WO3，晶粒尺寸逐渐减小，样品的压敏电压明显增大，非线性系数α先增大后减小．在SrCO3掺量为0．5％（摩尔分数）时，样品表现出较好的压敏性能，其压敏电压可低至9．1V／mm，非线性系数高至3.3．探讨了Sr元素掺杂的作用机理．     

对氧化铟掺杂SnCoNb压敏电阻性能的研究

通过实验对三氧化二铟掺杂的SnO2·Co2O3·Nb2O5压敏电阻的性能进行了研究。所用样品是在1350℃下烧结1h而制成的。实验发现所有样品都具有很高的致密度(相对密度不小于97.6%),这主要是由于Co2O3影响陶瓷的烧结过程造成的。当In2O3掺杂量为0.05mol%时,压敏电阻具有最高的非线性系数(α=19.3)。随着In2O3掺杂量的从0.00mol%增加至0.10mol%,非线性电场强度从213V/mm增加至815V/mm,而平均晶粒尺寸从6.6μm减小至4.9μm,非线性电场的增加与平均晶粒尺寸的减小密切相关;样品的相对介电常数也从2307减小至153,这归因于平均晶粒尺寸与势垒厚度比的减小。     

Nb2O5掺杂对TiO2陶瓷性能的影响

在Nb2O5含量x为0.1～1.5%的范围内,研究了Nb2O5掺杂对TiO2压敏陶瓷电性能的影响.发现x＝0.7%的样品显示出最低的压敏电压(Eb=8.57V/mm )以及最高的相对介电常数2.385×104.分析认为Nb2O5掺杂的实质是Nb5 固溶于 TiO2中取代Ti4 使晶粒半导化,但掺杂量受晶格畸变作用有一定限制.     

CuO掺杂对 SnO2压敏材料性能的影响

研究了掺杂 CuO对 SnO2· Ni2O3· Ta2O5压敏材料电学性能的影响.实验发现,随着 CuO的 掺杂量从 0.50mol%增加到 1.50mol%,材料的压敏电场强度从 132V/mm升高到 234V/mm,相对 介电常数从 4663减小到 2701.电场强度变化的原因是 CuO掺杂引起的晶粒尺寸变化,随掺杂量 增加晶粒尺寸从 18.8μ m减小到 13.3μ m.未固溶于 SnO2晶格而偏析在晶界上的 CuO阻碍了相 邻 SnO2晶粒的融合 ,这导致了晶粒尺寸的减小.为了解释 SnO2· Ni2O3· Ta2O5· CuO电学非线性 性质的起源,本研究对前人的晶界缺陷势垒模型进行了修正.对该压敏材料进行了等效电路分析, 实验测量与等效电路分析结果相符.     

Co2O3掺杂对SnO2-Ni2O3-Nb2O5系压敏材料性能的影响

研究并分析了Ni^2＋掺杂和Co^2＋掺杂对SnO2压敏电阻致密度和电学非线性性能的影响。研究了掺Co^3＋对Sno2-Ni2O3-Nb2O5压敏材料性能的影响。实验结果表明，Co2O3在高温下可转变为CoO。Co^2＋的掺入不仅能够增大Sno2-Ni2O3-Nb2O5材料的质量密度，而且在线性系数，在较大程度上提高了Sno2-Ni2O3-Nb2O5压敏材料的性能。     

Co2O3和MnCO3掺杂对低压ZnO压敏电阻电性能的影响

概述了低压ZnO压敏电阻的重要添加剂的作用,阐述了其电性能"三参数"(压敏电压梯度、非线性系数和漏电流)的影响因素.用低压ZnO压敏电阻的基本配方,以及在此基础上分别添加Co2O3、MnCO3、Co2O3 MnCO3四种配方制备样品作对比实验.发现Co2O3、MnCO3掺杂后都能引起压敏电压梯度升高,非线性系数显著提高,漏电流明显降低,且效果Co2O3 MnCO3大于MnCO3大于Co2O3.对造成上述差别的原因进行了深入分析.     

TiO2压敏电阻的研究与应用

为了更好地研制和应用压敏电阻元件,介绍了TiO2压敏电阻的基本性质,压敏机理以及研究现状,阐述了制备过程中掺杂物种、掺杂浓度、烧结温度、粉体材料等因素对二氧化钛压敏电阻性能的影响.研究表明,TiO2系列压敏电阻具有较低的压敏电压、较高的非线性系数、超高的介电常数,并且制备工艺简单.TiO2系列压敏电阻能有效弥补SrTiO3和ZnO系压敏电阻器所存在的不足之处,是低压压敏陶瓷的研发方向.     

Preparation of ZrO2-CeO2 and HfO2-CeO2 nanopowders

We prepared weakly agglomerated powders of ZrO₂-CeO₂ and HfO₂-CeO₂ solid solutions 5–8 nm in particle size, consisting of monoclinic and tetragonal phases. After heat treatment at 1200°C, the crystallite size was 30 and 14 nm, respectively. We also examined the effect of precipitate freeze drying on the crystallization of hafnia-based solid solutions containing up to 20 mol % CeO₂.     

Comparison of the Electronic Structures of La2CuO4, Sr2CuO2Cl2, and Sr2CuO2F2

First-principles cluster calculations are reported of the local electronic structure of the three compounds: La₂CuO₄, Sr₂CuO₂Cl₂, and Sr₂CuO₂F₂. The copper ${\text{3d}}_{x^2 - y^2 } $ and the planar oxygen 2p _σ atomic orbitals exhibit a similar degree of covalency. The out-of-plane orbitals, however, are quite different with the ${\text{3}}d_{3z^2 - r^2 } $ atomic orbital lowered significantly in energy for chlorine and fluorine apical positions.     

Thermoelectric power of single-phase samples of Tl2CaBa2Cu2O y and Ba2CaSr2Cu2O y

Single-phase 2122 samples of thallium and bismuth superconductors were made by the precursor matrix method. The thermopower of these samples was measured in the temperature range 250 K-T _c . The thermopower was positive and decreased linearly with increasing temperature aboveT _c (onset). The exponential enhancement of thermopower seen in the undoped and doped YBCO was not observed in these samples. The linear variation of thermopower can be explained on the basis of either a two-band model or a narrow band model.     

VLE data for CO2-CF2Cl2, N2-CO2, N2-CF2Cl2 and N2-CO2-CF2Cl

Knowledge about vapour-liquid (VLE) is required as a basis of reliable calculations for separation processes. Correlations available for the prediction of T, p, x, y data are less accurate for mixtures at high pressures and mixtures containing supercritical components. The results of VLE experiments are reported and compared with data calculated with equations of state.     

SiO2—TiO2—ZrO2系涂层的制备及其特性

用溶胶－凝胶法（sol-gel method）在不锈钢表面制备了SiO2-TiO2-ZrO2系无机氧化膜（STZ）。用DTA／TG、IR、XRD和SEM等手段研究了涂层制备时由凝胶向玻璃态的转变以及涂层薄膜的显微结构特点，考察了涂层对基体的保护效果。试验结果表明，在溶胶至凝胶最终转变为无机氧化物的过程中形成了无机网络，Si^4 和Zr^4 充当了网络骨架的形成离子。涂层为无定型玻璃态，其间混有石英、锐钛矿或金红石等微晶。     

Structure of Na2O·2TiO2 glass

X-ray radial distribution analysis and Raman spectroscopic measurement were carried out on Na₂O-2TiO₂ glass prepared by twin-roller quenching method. It is found that four-coordinated Ti⁴⁺ ions may be predominant over six-coordinated ones in the present glass. It is also found that the fraction of six-coordinated Ti⁴⁺ ions is larger in the present glass than in K₂O·2TiO₂ and Cs₂O·2TiO₂ glasses. Poorer glass-forming ability of the Na₂O-TiO₂ system compared with the K₂O-TiO₂ and Cs₂O-TiO₂ systems is ascribed to a larger fraction of TiO₆ octahedron for the former system.     

Elastic and Electronic Properties of Superconducting CaPd 2 As 2 and SrPd 2 As 2 vs. Non-superconducting BaPd 2 As 2

The first-principles calculations were performed to predict the elastic and electronic properties of the superconducting ThCr₂Si₂-type phases CaPd₂As₂ and SrPd₂As₂ in comparison with the non-superconducting CeMg₂Si₂-type phase BaPd₂As₂. Besides, the same properties were compared for CeMg₂Si₂- and ThCr₂Si₂-type polymorphs of BaPd₂As₂. We found that all these phases are mechanically stable and belong to soft materials with low hardness. The near-Fermi region is formed by the valence states of the blocks [Pd₂As₂] with decisive contributions of Pd 4d states. The values of N(E _F) increase in the sequence: CaPd₂As₂ < SrPd₂As₂ < BaPd₂As₂, i.e. in the reverse sequence relative to the transition temperatures T _C. Thus, the change in T _C cannot be explained by the electronic factor, i.e. by the simple correlation T _C～N(E _F). Most likely the decrease in T _C in the sequence CaPd₂As₂ → SrPd₂As₂ and the absence of a superconducting transition in BaPd₂As₂ are related to the structural factors and the peculiarities of the electron–phonon coupling mechanism.     

掺杂Bi_2Ti_2O_7对Y_2O_3-2TiO_2系微波介质陶瓷材料性能的影响

目前国内外对εr范围在40～80左右的中介电常数微波介质陶瓷体系的研究还很缺乏。为适应现代微波通讯技术发展需求,本实验研究开发了新型中介电常数Y2O3-2TiO2系微波介质陶瓷,并在此基础上添加Bi2Ti2O7陶瓷粉料进行复相掺杂。利用网络分析仪,阻抗分析仪,XRD,SEM等方法,本文重点研究了不同Bi2Ti2O7掺杂量对Y2O3-2TiO2系微波介质陶瓷材料烧结性能和介电性能的影响。通过分析发现适量掺杂能够有效降低材料的烧结温度,并使材料致密化。同时由于Bi3+置换主晶相中的Y3+形成了固溶体,材料主晶相为烧绿石结构并未改变。当添加质量分数为8wt%时获得介电性能较好的陶瓷材料,烧结温度从未掺杂的1460℃降低到1320℃。在1M下:εr≈62.14,tanδ≈1.22×10-3,微波频率(4.55GHz)下εr≈62.85,Q.f=4122.8GHz,τf=-7ppm/℃。     

Spectroscopic investigations of Cu2+ in Li2O-Na2O-B2O3-Bi2O3 glasses

Pure and copper doped glasses with composition,x Li ₂ O-(40-x)Na ₂ O-50B ₂ O ₃-10Bi ₂ O ₃,have been prepared over the range 0 ≤ x ≤ 40. The electron paramagnetic resonance (EPR) spectra of Cu²⁺ ions of these glasses have been recorded in the X-band at room temperature. Spin Hamiltonian parameters have been calculated. The molecular bonding coefficients, α² and β², have been calculated by recording the optical absorption spectra in the wavelength range 200–1200 nm. It has been observed that the site symmetry around Cu²⁺ ions is tetragonally distorted octahedral. The density and glass transition temperature variation with alkali content shows non-linear behaviour. The IR studies show that the glassy system contains BO₃ and BO₄ units in the disordered manner.