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1.
The aim of this study is to fabricate a superhydrophobic antireflective (AR) coating that can be deposited on the covering of a solar cell system. First, AR coatings were synthesized on glass substrates with an average transmittance over 96% by layer-by-layer deposition of polyelectrolyte. Superhydrophobic sol gel was prepared by hydrolyzing tetraethoxysilane and then reacting it with hexamethyldisilazane. The sol gel, aged at 20°C for 96 h, was used to spin-coat a superhydrophobic film with a water contact angle of 163° and a transmittance of ~91%. The superhydrophobic sol gel was spin-coated on the top of an AR coating to form a superhydrophobic AR coating on a glass substrate. The average transmittance, advancing contact angle, and contact angle hysteresis of the superhydrophobic AR coating, which was spin-coated from sol gel aged for 96 h or 168 h, were 94.5 ± 0.7%, 154.0° ± 1.5°, and 15.4° ± 0.3° or 96.4 ± 0.2%, 158.4° ± 4.4°, and 1.8° ± 0.3°, respectively. Strategies for obtaining a superhydrophobic AR coating are discussed herein. 相似文献
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《Carbon》2014
To suppress photoresist residues on carbon nanotubes (CNTs) resulting from photolithography, CNTs are covered by a sacrificial layer during photolithography. Using aluminum oxide (Al2O3) deposited by low temperature atomic layer deposition as the sacrificial layer, the fabricated suspended CNT field-effect transistors exhibit low on-state resistances as low as 91 kΩ and low gate hysteresis of 0.5 V in ambient air. The effectiveness of this technique in suppressing residues on CNTs was affirmed by atomic force microscopy, scanning electron microcopy, and micro Raman spectroscopy. The etchants of Al2O3, hydrofluoric acid and phosphoric acid, were found not to cause defects in CNTs while removing the sacrificial Al2O3 layer. With the protection of the Al2O3 layer, oxygen plasma ashing can be performed without causing further defects in CNTs, and the minimum thickness was determined to be between 9 nm and 17 nm. This simple and effective approach can be easily implemented in different resist-based lithography processes to fabricate carbon nano-devices that are free of resist residues. 相似文献
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Polymer nanoparticle-based porous antireflective coating on flexible plastic substrate 总被引:1,自引:0,他引:1
Increased using of plastic optical elements has generated a need for applying antireflection coatings onto plastic substrates. In this paper we reported a facile method to preparing porous thin films on plastic substrates by spin-casting poly (methyl methacrylate) (PMMA)/polystyrene (PS) mixed latices, followed by selectively removing PS particles. The refractive index of the porous coating is directly related to its porosity which could be controlled by varying mixing fraction of the sacrificial PS particles. The obtained porous thin films exhibited excellent anti-reflective (AR) performance over visible range with minimum reflection of 0.02%. The powerful control on refractive index and the versatility of this method makes it practicable to prepare antireflective coating on various plastic substrates with optimal performance. 相似文献
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M.H. Oliveira D.S. Silva A.D.S. Côrtes M.A.B. Namani F.C. Marques 《Diamond and Related Materials》2009,18(5-8):1028-1030
Amorphous carbon with different structures was used as antireflective coating on crystalline silicon solar cells. Polymeric-like carbon (PLC) and diamond-like carbon (DLC) were deposited by the PECVD technique on the anode and cathode electrode, respectively. Tetrahedral-like carbon (ta-C) was deposited by the filtered cathodic vacuum arc (FCVA). An increase in the short circuit current comparable to that obtained by conventional antireflective coating (SnO2) was obtained using PLC antireflective coating. The effect on the short circuit current of the other structures (DLC and ta-C) is reduced mainly due to the band gap and/or a mismatch on the index of refraction of the film and the crystalline silicon substrate. 相似文献
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Ultradense and planarized antireflective vertical silicon nanowire array using a bottom-up technique
Ludovic Dupré Thérèse Gorisse Angélique Letrouit Lebranchu Thomas Bernardin Pascal Gentile Hubert Renevier Denis Buttard 《Nanoscale research letters》2013,8(1):123
The production and characterization of ultradense, planarized, and organized silicon nanowire arrays with good crystalline and optical properties are reported. First, alumina templates are used to grow silicon nanowires whose height, diameter, and density are easily controlled by adjusting the structural parameters of the template. Then, post-processing using standard microelectronic techniques enables the production of high-density silicon nanowire matrices featuring a remarkably flat overall surface. Different geometries are then possible for various applications. Structural analysis using synchrotron X-ray diffraction reveals the good crystallinity of the nanowires and their long-range periodicity resulting from their high-density organization. Transmission electron microscopy also shows that the nanowires can grow on nonpreferential substrate, enabling the use of this technique with universal substrates. The good geometry control of the array also results in a strong optical absorption which is interesting for their use in nanowire-based optical sensors or similar devices. 相似文献
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DISGO涂层具有优异的耐候性、耐蚀性和环境友好的表面特性 ,其可望在特殊性能涂层领域得到广泛的应用。简述这一涂层的防蚀机理、涂层结构及涂层特性。 相似文献
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In this study, a non-selenized CuInGaSe2 (CIGS) solar device with textured zinc oxide (ZnO) antireflection coatings was studied. The ZnO nanostructure was fabricated by a low-temperature aqueous solution deposition method. With controlling the morphology of the solution-grown tapered ZnO nanorod coatings, the average reflectance of the CIGS solar device decreased from 8.6% to 2.1%, and the energy conversion efficiency increased from 9.1% to 11.1%. The performance improvement in the CuInGaSe2 thin-film solar cell was well explained due to the gradual increase of the refractive index between air and the top electrode of solar cell device by the insertion of the ZnO nanostructure. The results demonstrate a potential application of the ZnO nanostructure array for efficient solar device technology. 相似文献
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In an earlier paper we have described sulphite‐based resist printing using ink‐jet procedures. This paper describes an alternative approach to sulphite inactivation of vinylsulphone dyes by using secondary amines to inactivate fluoro‐s‐triazine dyes while maintaining the reactivity of the vinylsulphone dyes. Monofluoro‐s‐triazine reactive dyes are padded onto cotton fabrics and then deactivated by ink‐jet printing with a suitable secondary amine formulation to produce a white image on a solid ground colour after appropriate fixation and soap‐off procedures have been undertaken. A coloured image can be achieved by overprinting the resist‐printed areas with a coloured ink formulation containing a β‐sulphatoethylsulphone‐type reactive dye; such dyes form a β‐bis‐alkylaminoethylsulphone dye via reaction with the secondary amine. This latter dye ‘unblocks’ during a mildly acidic steaming process to form the reactive vinylsulphone dye, and so, unlike the monofluoro‐s‐triazine dye, is not deactivated towards subsequent covalent reaction with the cotton substrate. 相似文献
10.
Xiaomin Meng Bo Peng Longjiao Yao Yadong Wang Shuang Feng Qi Ge Majid Shaker 《International Journal of Applied Ceramic Technology》2023,20(4):2331-2340
In this paper, the electron beam vacuum coating method was used to coat a SiO2 film on an MgAl2O4 spinel substrate. The thickness of the coating was aimed to be 925 nm based on the physics of the antireflection coatings. Atomic force microscope images revealed that the coated silica was 880 nm thick, which is close to the aimed theoretical thickness and had 2.11 nm roughness. It could enhance the transparency of the spinel substrate by being coated on it. The infrared transmittance of the sample coated with SiO2 film in the range of 3700 nm-4800 nm was measured by a Fourier transform infrared spectrometer and reached 92.5% to 78.5%, which was about 2%–4% higher than that of MgAl2O4 spinel. In addition, it was discovered that the bonding force between the coating and the substrate is determined to be about 200 MPa. The results of this study can be used for further precise design and production of antireflection coatings on the transparent materials that need more transparency. 相似文献
11.
PCS(poly-4-chlorostyrene) has previously been evaluated as a negative e-beam resist, but although the sensitivity was good [2 to 5μC/square centimeter (cm2)], the contrast (γ) was poor (1.1 to 1.5). Recent experiments have shown that contrast is not only a function of molecular weight distribution (MWD), but can also be affected by polymerization conditios. Among these are: branching, head to head linkages, and oxygen in backbone. PCS was prepared via thermal free radical solution polymerization, and then fractionated by differential solvation techniques. Reactions occurring during polymerization and crosslink formation on irradiation will be discussed. For molecular weights of 700 and 300K respectively (same MWD), the sensitivity was 2 and 5μC/cm2, while the contrast (γ) was 3.5 for both. This is the highest reported contrast for a polymeric negative resist. The resist can then be UV hardened after development, and will not flow at 200°C. The RIE etch rate is ~1/2 that of PMMA in various plasmas. 相似文献
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铝阳极氧化膜多色彩电解着色工艺 总被引:1,自引:0,他引:1
简述了多色彩电解着色工艺的发展和特点,介绍了2种达到多色化显色的方法:阳极氧化膜底部扩孔处理和调整阳极氧化膜阻挡层。给出了扩孔处理过程中阳极氧化膜横断面的显微结构变化示意图,并给出了“阻挡层调整”实现多色化的工艺参数。描述了多色化阳极氧化膜的性能,并对比了电泳涂漆前后多色彩电解着色样品的颜色。 相似文献
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Koichi Hatada Tatsuki Kitayama Shigeru Danjo Yutaka Tsubokura Heimei Yuki Kazuyuki Moriwaki Hiroaki Aritome Susumu Namba 《Polymer Bulletin》1983,10(1-2):45-50
Summary Polymer of α-substituted benzyl methacrylate was found to be used as a new type of positive electron-beam resist, which forms
methacrylic acid units in the polymer chain on the exposure to electron-beam and can be developed using alkaline solution
as a developer. The sensitivity was dependent on the bulkiness of the ester group and the number of ?-hydrogen atoms in the
ester group. The sensitivity and γ-value of atactic poly(α, α-dimethylbenzyl methacrylate) were improved by a factor of more
than three over poly (methyl methacrylate). 相似文献
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Juha Harra Mikko Tuominen Paxton Juuti Jenny Rissler Heli Koivuluoto Janne Haapanen Henna Niemelä-Anttonen Christian Stenroos Hannu Teisala Johanna Lahti Jurkka Kuusipalo Petri Vuoristo Jyrki M. Mäkelä 《Journal of Coatings Technology and Research》2018,15(3):623-632
An atmospheric pressure aerosol-based wet thin film coating technique called the nFOG is characterized and applied in polymer film coatings. In the nFOG, a fog of droplets is formed by two air-assist atomizers oriented toward each other inside a deposition chamber. The droplets settle gravitationally and deposit on a substrate, forming a wet film. In this study, the continuous deposition mode of the nFOG is explored. We determined the size distribution of water droplets inside the chamber in a wide side range of 0.1–100 µm and on the substrate using aerosol measurement instruments and optical microscopy, respectively. The droplet size distribution was found to be bimodal with droplets of approximately 30–50 µm contributing the most to the mass of the formed wet film. The complementary measurement methods allow us to estimate the role of different droplet deposition mechanisms. The obtained results suggest that the deposition velocity of the droplets is lower than the calculated terminal settling velocity, likely due to the flow fields inside the chamber. Furthermore, the mass flux of the droplets onto the substrate is determined to be in the order of 1 g/m3s, corresponding to a wet film growth rate of 1 µm/s. Finally, the nFOG technique is demonstrated by preparing polymer films with thicknesses in the range of approximately 0.1–20 µm. 相似文献
18.
Sachiko Yoneyama Kiyoshi Oguchi Masayoshi Watanabe Kohei Sanui Naoya Ogata Yoichi Takahashi Tomihiro Nakada 《Polymer Engineering and Science》1988,28(14):912-915
Polymer complex of poly (4-vinylpyrldine) and malonic acid was investigated as a new type of electron beam (EB) resist for dry development, as malonic acid was decomposed by EB irradiation. It was found that the polymer complex could be developed with O2 plasma etching and that the positive resist patterns with high resolution could be obtained. The mechanism for this lithography process was studied by means of IR and ESCA spectra. 相似文献
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