Microwave dielectric properties and microstructures of Nb2O5-Zn0.95Mg0.05TiO3 + 0.25TiO2 ceramics with Bi2O3 addition

The effects of Bi₂O₃ addition on the microwave dielectric properties and the microstructures of Nb₂O₅-Zn_0.95Mg_0.05TiO₃ + 0.25TiO₂ (Nb-ZMT′) ceramics prepared by conventional solid-state routes have been investigated. The results of X-ray diffraction (XRD) indicate the presence of four crystalline phases, ZnTiO₃, TiO₂, Bi₂Ti₂O₇, and (Bi_1.5Zn_0.5)(Ti_1.5Nb_0.5)O₇ in the sintered ceramics, depending upon the amount of Bi₂O₃ addition. In addition, in order to confirm the existence of (Bi_1.5Zn_0.5)(Ti_1.5Nb_0.5)O₇ phase in the samples, the microstructure of Nb-ZMT′ ceramic with 5 wt.% B₂O₃ addition was analyzed by using a transmission electron micrograph. The dielectric constant of Nb-ZMT′ samples was higher than ZMT′ ceramics. The Nb-ZMT′ ceramic with 5 wt.% Bi₂O₃ addition exhibits the optimum dielectric properties: Q × f = 12,000 GHz, ?_r = 30, and τ_f = ?12 ppm/°C. Unlike the ZMT′ ceramic sintered at 900 °C, the Nb-ZMT′ ceramics show higher Q value and dielectric constant. Moreover, there is no Zn₂TiO₄ existence at 960 °C sintering. To understand the co-sinterability between silver electrodes and the Nb-ZMT′ dielectrics, the multilayer samples are prepared by multilayer thick film processing. The co-sinterability (900 °C) between silver electrode and Nb-ZMT′ dielectric are well compatible, because there are no cracks, delaminations, and deformations in multilayer specimens.     

Effects of Bi2O3–Li2CO3 additions on dielectric and pyroelectric properties of Mn doped Pb(Zr0.9Ti0.1)O3 thick films

Pb(Zr_0.9Ti_0.1)O₃ pyroelectric thick films adding various amounts of the sintering aids Bi₂O₃–Li₂CO₃ have been deposited on the substrates Al₂O₃ by the screen-printing process, and the dependence of microstructure, dielectric and pyroelectric properties on the content of sintering aids has been studied. When the amount of Bi₂O₃–Li₂CO₃ increases from 0 wt% to 5.4 wt%, the sintering temperature of the thick films decreases from 1100 °C to 900 °C, and the grain size and the lattice constant decrease either, but the density and the dielectric constant increase. The Pb(Zr_0.9Ti_0.1)O₃ thick film with 5.4 wt% of Bi₂O₃–Li₂CO₃ sintered at 900 °C has the maximum pyroelectric coefficient 10.51×10^?8 C/cm^?2 K^?1 and the highest figure-of-merit 10.58×10^?5 Pa^?0.5.     

The effects of sintering temperature and content of x on phase formation,microstructure and dielectric properties of (1−x)(Bi0.4871Na0.4871La0.0172TiO3)−x(BaZr0.05Ti0.95O3) ceramics prepared via the combustion technique

(1?x)(Bi_0.4871Na_0.4871La_0.0172TiO₃)?x(BaZr_0.05Ti_0.95O₃) ceramics (abbreviated (1?x)BNLT?xBZT) where 0.1≤x≤0.3 were fabricated by the combustion technique using glycine as fuel. BNLT and BZT powders were calcined at temperatures of 825 °C for 4 h and 925 °C for 6 h, respectively. After that they were mixed with the different compositions. It was found that the optimum sintering temperature of (1?x)BNLT?xBZT ceramic was obtained at 1125 °C for 2 h. This ceramic had the highest density. The structure of the (1?x)BNLT?xBZT ceramics exhibited the co-existence of tetragonal and rhombohedral phases with x≤0.1. The tetragonality increases with the increase of x content. The average grain size, the density and the Curie temperatures decrease with increasing x content. The maximum dielectric constant and the highest P_r were at about 4850 and 12.7 μC/cm², respectively, and were obtained by the 0.85BNLT?0.15BZT sample.     

Fabrication of Y and Fe co-doped BaZr0.13Ti1.46O3 fine-grained ceramics for temperature-stable multilayer ceramic capacitors

Y³⁺ and Fe³⁺ co-doped BaZr_0.13Ti_1.46O₃ powders were synthesized by wet chemical method through a precipitation process, able to control uniformity and particle size of the BaZr_0.13Ti_1.46O₃-based particles. Fine-grained BaZr_0.13Ti_1.46O₃ ceramics co-doped with various amounts of Y³⁺ and Fe³⁺ were prepared at low sintering temperature to yield good dielectric properties and gentle temperature stability. The co-doping effect on the microstructure and dielectric properties of BaZr_0.13Ti_1.46O₃ ceramics were studied. Results showed the dielectric constants firstly to increase monotonically then decrease with the increase of Y³⁺ and Fe³⁺concentration. Overall, the resulting ceramics met the X8R specification when Y³⁺ and Fe³⁺ contents were 2 or 4 mol%. Moreover, the increase in Y³⁺ and Fe³⁺ doping concentration from 6 to 8 mol% satisfied the X7R specification.     

Improved dielectric properties and grain boundary response of SrTiO3 doped Y2/3Cu3Ti4O12 ceramics fabricated by Sol-gel process for high-energy-density storage applications

A chemical solution processing method based on sol-gel chemistry (SG) was used to synthesize (1-x)Y_2/3Cu₃Ti₄O₁₂-xSrTiO₃ (x = 0, 0.05, 0.1, 0.15, 0.2, 0.25) ceramics successfully. The 0.85Y_2/3Cu₃Ti₄O₁₂-0.15SrTiO₃ ceramics sintered at 1050 °C for 20 h showed fine-grained microstructure and high dielectric constant (ε′ ≈ 1.7 × 10⁵) at 1 kHz. Furthermore, the 0.85Y_2/3Cu₃Ti₄O₁₂-0.15SrTiO₃ ceramics appeared distinct pseudo-relaxor behavior. Two electrical responses were observed in the combined modulus and impedance plots, indicating the presence of Maxwell-Wagner relaxation. Sr vacancies and additional oxygen vacancies had substantial contribution to the sintering behavior, an increase in grain growth, and relaxation behaviors in grain boundaries. The contributions of semiconducting grains with the nanodomain and insulating grain boundaries (corresponding to high-frequency and low-frequency electrical response, respectively) played important roles in the dielectric properties of (1-x)Y_2/3Cu₃Ti₄O₁₂-xSrTiO₃ ceramics. The occurrence of the polarization mechanism transition from the grain boundary response to the electrode one with temperature change was clearly evidenced in the low frequency range.     

Dielectric behaviors of Nb2O5–Co2O3 doped BaTiO3–Bi(Mg1/2Ti1/2)O3 ceramics

Nb₂O₅ and Nb–Co doped 0.85BaTiO₃–0.15Bi(Mg_1/2Ti_1/2)O₃ (0.85BT–0.15BMT) ceramics were investigated. From XRD patterns, undesired phase was observed when the (Nb₂O₅/Nb-Co) doping levels exceed 3 wt.%/2 wt.%, giving rise to the deteriorate dielectric constant. The 0.85BT–0.15BMT ceramics doped with 2 wt.%Nb₂O₅ was found to possess a moderate dielectric constant (? ～ 1000) and low dielectric loss (tan δ = 0.9%) at room temperature and 1 kHz, showing flat dielectric behavior over the temperature range from ?55 to 155 °C. It was found that the formation of core–shell structure in the BT based ceramics is controlled by the doping sequence of Nb- and Bi-oxides.     

Bismuth titanates candidates for high permittivity LTCC

Bi₂O₃–TiO₂ composites are known to possess attractive microwave dielectric properties. However, producing LTCC analogues with equally promising dielectric properties is problematic. Here, we show that judicious choice of both TiO₂ starting powders and dopants can produce composites with excellent properties. Three TiO₂ powders were evaluated: 1 μm-anatase, 1 μm-rutile and a nanosized (30 nm) mixture of 75–25 anatase-rutile. The best dielectric properties were obtained by using uncalcined nanosized anatase/rutile with Bi₂O₃ powder. By doping this Bi₂O₃–TiO₂ powder mixture with 0.112 wt.% CuO dielectric properties of Q × f = 9000 GHz, ɛ_r = 80 and τ_f = 0 ppm/K (at 300 K) were obtained at a sintering temperature of 915 °C.     

Energy storage density and tunable dielectric properties of BaTi0.85Sn0.15O3/MgO composite ceramics prepared by SPS

(100-x) wt.% BaTi_0.85Sn_0.15O₃–x wt.% MgO (BTS/MgO) composite ceramics were prepared by spark plasma sintering (SPS) technology. Phase constitution, microstructure, dielectric and electrical energy storage properties of BTS/MgO composite ceramics were investigated. The samples prepared by SPS had smaller grain size and presented layer-plate substructure. Dielectric permittivity and dielectric loss of BTS/MgO composite ceramics decreased significantly with the content of MgO increasing, and dielectric tunability maintained a relatively high value (>45%). Meanwhile, the dielectric breakdown strength was improved when addition of MgO in BTS matrix, which resulted in a significant improvement of energy storage density. The high dielectric breakdown strength of 190 kV/cm, energy storage density of 0.5107 J/cm³ and energy storage efficiency of 92.11% were obtained in 90 wt.% BaTi_0.85Sn_0.15O₃–10 wt.% MgO composite ceramics. Therefore, BTS/MgO composites with good tunable dielectric properties and electrical energy storage properties could be exploited for energy storage and phase shifter device applications.     

Effects of Bi4Ti3O12 addition on the microstructure and dielectric properties of modified BaTiO3 under a reducing atmosphere

The effects of Bi₄Ti₃O₁₂ addition on the microstructure and dielectric properties of Mn-modified BaTiO₃ were investigated to develop low temperature fired BaTiO₃-based ceramics with stable temperature characteristics. The sintering temperature of Mn-doped BaTiO₃ could be reduced to 1200 °C by adding more than 1 mol% Bi₄Ti₃O₁₂. TEM results show an apparent core–shell structure with 2 mol% Bi₄Ti₃O₁₂ addition. However, it was destroyed when the Bi₄Ti₃O₁₂ content increased from 2 to 4 mol%. The permittivity decreased and the Curie temperature shifted to higher temperature when the Bi₄Ti₃O₁₂ content increased from 0 to 3 mol%. The temperature characteristic of capacitance was very close to the EIA X8R specification when 2 mol% Bi₄Ti₃O₁₂ was added due to the presence of the core–shell grain structure and raised Curie temperature. With adequate Bi₄Ti₃O₁₂ addition, the BaTiO₃-based system shows great potential for applications in EIA X8R-type multilayer ceramic capacitors.     

Fabrication and dielectric properties of barium titanate-based glass ceramics for tunable microwave LTCC application

Low-fired ferroelectric glass ceramics were fabricated from glass powders with a basic composition of 0.65BaTiO₃·0.27SiO₂·0.08Al₂O₃. The combined addition of SnO₂ (or ZrO₂) and SrCO₃ was conducted to modify the dielectric properties of the glass ceramics. The Sr-component could be incorporated preferentially in the perovskite structure after heating at 1000 °C. The bulk and thick film samples obtained by sintering glass powder with a starting composition of 0.65(Ba_0.7Sr_0.3)(Ti_0.85Sn_0.15)O₃·0.27SiO₂·0.08Al₂O₃ at 1000 °C for 24 h showed a broadened ɛ_r–T relation with T_c ≈ 10 °C and ɛ_r(max) ≈ 280 and microwave tunability of 32% at 3 GHz, respectively.     

Electrical properties of low-temperature-fired ferrite–dielectric composites

The effects of the BaO·(Nd_0.8Bi_0.2)₂O₃·4TiO₂ (BNBT) to NiCuZn ferrite ratio and addition of Bi₂O₃–B₂O₃–SiO₂–ZnO (BBSZ) glass on the sintering behavior, microstructure evolution, dielectric and magnetic properties of BNBT–NiCuZn ferrite composites were investigated in developing low-temperature-fired composites for high frequency electromagnetic interference (EMI) devices. The results indicate that these composites can be densified at 900 °C and exhibit superior dielectric and magnetic properties with the addition of BBSZ glass. The dielectric system used in the ferrite–dielectric composites reported in the previous studies mostly belong to the ferroelectricity group, which are not suitable for use in the high frequency range (>800 MHz) due to the selfresonance frequency limit. In this study, the dielectric constant remains nearly a constant over a wide range of frequencies (100 MHz to 1 GHz) and the magnetic resonance frequencies are larger than 100 MHz for the BNBT + BBSZ glass–NiCuZn ferrite composites. Therefore, the BNBT + BBSZ glass–NiCuZn ferrite composites can be a good candidate material for high frequency EMI device applications.     

Low-temperature sintering,structure transition and dielectrical properties of Ba0.85Ca0.15Ti0.9Zr0.1O3 with Na0.5Bi0.5TiO3 addition

Na_0.5Bi_0.5TiO₃-modified Ba_0.85Ca_0.15Ti_0.9Zr_0.1O₃ ceramics were prepared by solid state route and their structural and dielectric properties were investigated. The sintering temperature of BCTZ ceramics has been significantly decreased from 1460 °C to 1280 °C with NBT addition. All samples showed a pure perovskite structure and a stable solid solution has been formed between BCTZ and NBT. Some tetragonal phase gradually transformed to rhombohedral or cubic phase with the addition of NBT. Dielectric peak gradually becomes broader, revealing that the diffuser behavior was enhanced. The prominent superimposed loss peaks related to thermally activated relaxation process. The values of activation energy of the relaxation process are 1.034, 1.285, 1.308 and 1.353 eV, which could be associated with the migration of oxygen vacancies.     

Low temperature sintering of ZnTiO3/TiO2 based dielectric with controlled temperature coefficient

Structure, microstructure and dielectric properties of ZnTiO₃ and rutile TiO₂ mixtures (ZnTiO₃ + xTiO₂ with x = 0, 0.02, 0.05, 0.1, 0.15 and 0.2) sintered using ZnO–B₂O₃ glass phase (5 wt.% added) as sintering aid have been investigated. For all compounds, the sintering temperature achieves 900 °C. The X-ray diffraction patterns indicate for x = 0.1 that the material is composed by three phases identified as ZnTiO₃ hexagonal, TiO₂ rutile and ZnO. The presence of ZnO is explained by the introduction of Ti into Zn site to form the (Zn_1−xTi_x)TiO_3+x solid solution in resulting the departure of ZnO from the ZnTiO₃ structure. The ZnTiO₃ + 0.15TiO₂ composition sintered at 900 °C with glass addition exhibits attractive dielectrics properties (ɛ_r = 23, tan(δ) < 10⁻³ and a temperature coefficient of the dielectric constant near zero (τ_ɛ = 0 ppm/°C)) at 1 MHz. It is also shown that the introduction of TiO₂ allows to tune the temperature coefficient of the permittivity. All these properties lead this system compatible to manufacture silver based electrodes multilayer dielectrics devices.     

Li4Mg3Ti2O9: A novel low-loss microwave dielectric ceramic for LTCC applications

Low-loss novel Li₄Mg₃Ti₂O₉ dielectric ceramics with rock-salt structure were prepared by a conventional solid-state route. The crystalline structure, chemical bond properties, infrared spectroscopy and microwave dielectric properties of the abovementioned system were initially investigated. It could be concluded from this work that the extrinsic factors such as sintering temperatures and grain sizes significantly affected the dielectric properties of Li₄Mg₃Ti₂O₉ at lower sintering temperatures, while the intrinsic factors like bond ionicity and lattice energy played a dominant role when the ceramics were densified at 1450 °C. In order to explore the origin of intrinsic characteristics, complex dielectric constants (ε^’ and ε^’’) were calculated by the infrared spectra, which indicated that the absorptions of phonon oscillation predominantly effected the polarization of the ceramics. The Li₄Mg₃Ti₂O₉ ceramics sintered at 1450 °C exhibited excellent properties of ε_r=15.97, Q·f=135,800 GHz and τ_f=−7.06 ppm/°C. In addition, certain amounts of lithium fluoride (LiF) were added to lower the sintering temperatures of matrix. The Li₄Mg₃Ti₂O₉−3 wt% LiF ceramics sintered at 900 °C possessed suitable dielectric properties of ε_r=15.17, Q·f =42,800 GHz and τ_f=−11.30 ppm/°C, which made such materials promising for low temperature co-fired ceramic applications (LTCC).     

Structural,dielectric and ferroelectric properties of lead-free Ba0.85Ca0.15Zr0.10Ti0.90O3 ceramics prepared by Plasma Activated Sintering

Lead-free Ba_0.85Ca_0.15Zr_0.10Ti_0.90O₃ (BCZT) ceramics were prepared by Plasma Activated Sintering (PAS). The influence of PAS sintering temperature on the crystalline phase, microstructure, and, dielectric and ferroelectric properties of BCZT ceramics were studied. The phase structure of BCZT ceramics first changed from rhombohedral phase to the coexistence of rhombohedral and tetragonal phases and then to tetragonal phase as the sintering temperature increased. Microstructural characterization of BCZT ceramics indicated that PAS can obtain a compact microstructure at lower temperatures of 1150–1300 °C compared with that from common pressureless sintering. The BCZT ceramics showed different degrees of diffuseness with increased temperature, and the diffuseness exponents C are all approximately on the order of 10⁵ °C. The dielectric and ferroelectric properties of BCZT ceramics were enhanced with increased sintering temperature. BCZT ceramics sintered at 1250 °C exhibited optimum properties of room-temperature ε_r=2863, ε_m=6650, and 2P_r=25.24 μC/cm², resulting from the relatively higher tetragonal phase content of the MPB between tetragonal and rhombohedral phases together with a compact microstructure.     

Sintering,microstructure and electricity properties of ITO targets with Bi2O3–Nb2O5 addition

High density and low electrical resistivity ITO targets were prepared by normal pressure sintering in oxygen with Bi₂O₃–Nb₂O₅ addition. The relative density, microstructure and electrical properties of the ITO targets can be adjusted by changing the sintering temperature (1350 °C~1550 °C) and the content of Bi₂O₃–Nb₂O₅. The results show that the sintering temperature of ITO targets with Bi₂O₃–Nb₂O₅ decreased from 1550 °C to 1450 °C, and the maximum relative density (99.6%) and the lowest electrical resistivity (1.78×10⁻⁴ Ω cm) were reached when the sintering temperature was 1450 °C with 5 wt% Bi₂O₃–Nb₂O₅. The carrier concentration increased as the increase of the contents of Bi₂O₃–Nb₂O₅ and sintering temperature. The mobility first increased, and then decreased above 1450 °C as the sintering temperature increased.     

Low sintering BaNd2Ti4O12 microwave ceramics prepared by CuO thin layer coated powder

Recently, BaO–Nd₂O₃–TiO₂ systems are widely studied for microwave applications because of their high dielectric constant and high quality factor. However, pure BaNd₂Ti₄O₁₂ ceramics without additives have to be sintered above 1300 °C to achieve densification. Copper oxide has been known as a good sintering aid for electronic ceramics and less reactive toward silver. We have introduced the CuO into BaNd₂Ti₄O₁₂ by modifying the surface of BaNd₂Ti₄O₁₂ by CuO thin layer on the calcined powder instead of mixing CuO directly with BaNd₂Ti₄O₁₂ powder. The process reduces the amount of sintering aid and minimized the negative impact of sintering aid on dielectric properties such as quality factor. The CuO precursor solution of Cu(CH₃COO)₂, Cu(NO₃)₂ and CuSO₄, were used to prepare CuO thin layer. They were investigated individually to determine their effects on the densification, crystalline structure, microstructure and microwave dielectric properties of BaNd₂Ti₄O₁₂. The CuSO₄ coated BaNd₂Ti₄O₁₂ sintered at 1150 °C has exhibited better dielectric properties than those of CuO doped BaNd₂Ti₄O₁₂ (k, 62.5 versus 61.2; Q × f, 11,500 GHz versus 10,500 GHz). The thin layer dopant coating process has been found to be a very effective way to lower ceramic sintering temperature without scarifying its dielectric properties.     

Preparation of Bi4Ti3O12 nanopower by azeotropic co-precipitation and dielectric properties of the sintered ceramic

Bi₄Ti₃O₁₂ nanopowders were prepared by an azeotropic co-precipitation method and the phase evolution process, microstructure and sintering behavior were investigated. The results indicate that well dispersed and agglomerate-free nanocrystalline Bi₄Ti₃O₁₂ with average particle size of 21 nm can be obtained by calcinating the precursor at 750 °C, which is 50 °C lower than traditional solid reaction. The relative density of the ceramic reaches 96% at 1000 °C and shows no evident decrease until 1100 °C. The broadened sintering temperature range and the lower loss tangent of the ceramic show good sintering activity of the nanopowders.     

Solid state synthesis and sintering of solid solutions of BNT–xBKT

Various compositions of the solid solution system (100 − x) Bi_0,5Na_0,5TiO₃–xBi_0,5K_0,5TiO₃ (x = 0, 10, 25, 50, 75, 90, 100) were prepared by the mixed oxide route. The formation reaction was analyzed by thermogravimetry coupled with mass spectroscopy and differential scanning calorimetry. In situ high temperature X-ray diffraction up to 770 °C indicated emerging and vanishing of phases during the calcination. Intermediate phases such as alkalipolytitanate (Na/K)₂Ti₆O₁₃ and bismuth titanate Bi₂Ti₂O₇ were identified as forming the perovskite phase. The formation reactions were proposed based on the data obtained. Furthermore the microstructure and the dielectric behavior of the sintered samples were observed by scanning electron microscopy, impedance spectrometry and polarization measurements.     

Sintering,microstructural development,and electrical properties of gadolinia-doped ceria electrolyte with bismuth oxide as a sintering aid

A considerable reduction (≥250 °C) in the sintering temperature, enhancement of the sintering density, and a slight improvement of the electrical properties, can be achieved by using bismuth oxide in the range of 0.2 to 2 wt.%, as a sintering aid for gadolinia-doped ceria (GDC) ceramic electrolytes. Dilatometric experiment (CHR) and SEM observations indicate that a liquid phase-assisting sintering mechanism contributes to the improvement in sintering density for bismuth oxide concentrations exceeding 0.5 wt.%. The addition of small amount of Bi₂O₃ ≤0.5 wt.% also results in the achievement of highly dense ceramic bodies (≥99% of theoretical density) after sintering at 1200 °C for 4 h, which indicates that the addition of Bi₂O₃ to gadolinia-doped ceria promoted the sintering process by a cooperating volume diffusion-liquid phase-assisting mechanism. Based on the lattice constant data, the solid solubility limit of Bi₂O₃ in gadolinia-ceria is, probably, lower than 1.0 wt.%. Grain size also increased with increasing Bi₂O₃ content up to 0.5 wt.% and then it decreased with further addition of Bi₂O₃. The addition of the smaller amounts of bismuth oxide, i.e., ≤1.0 wt.% Bi₂O₃ slightly enhanced the total ionic electrical conductivity of the gadolinia-doped ceria electrolyte. The sintering temperature strongly influenced the electrical conductivity of the doped-GDC ceramics. The best sample was that containing 1.0 wt.% Bi₂O₃ sintered at 1400 °C for 2 h which had an ionic electrical conductivity of 4 S m⁻¹ at 700 °C, and an activation energy of 0.58 eV for the oxide-ion conduction process in air.