Beyond G-band: a 235 GHz InP MMIC amplifier

We present results on an InP monolithic millimeter-wave integrated circuit (MMIC) amplifier having 10-dB gain at 235GHz. We designed this circuit and fabricated the chip in Northrop Grumman Space Technology's (NGST) 0.07-/spl mu/m InP high electron mobility transistor (HEMT) process. Using a WR3 (220-325GHz) waveguide vector network analyzer system interfaced to waveguide wafer probes, we measured this chip on-wafer for S-parameters. To our knowledge, this is the first time a WR3 waveguide on-wafer measurement system has been used to measure gain in a MMIC amplifier above 230GHz.     

32 GHz MMIC distributed amplifier based on n-channel SiGe MODFETs

For the first time the fabrication of a distributed amplifier based on n-type Si/SiGe-MODFETs is presented. The realised amplifier consists of six identical stages and has a gain of 5.5 dB. The bandwidth of this amplifier is 32 GHz. The gain ripple up to this frequency is /spl plusmn/0.8 dB. The return losses at the input and output are better than 10 dB. Using a coplanar waveguide layout for the amplifier no via-holes and backside processing is needed. The MMIC has a size of 0.9/spl times/3.2 mm/sup 2/.     

A 20 mW, 150 GHz InP HEMT MMIC power amplifier module

This paper describes a power amplifier (PA) module containing an InP high electron mobility transistor (HEMT) monolithic millimeter-wave integrated circuit (MMIC) amplifier chip, designed, and packaged at the Jet Propulsion Laboratory, and fabricated at HRL Laboratories. The module features 20 mW of output power at 150 GHz, with more than 10 mW available in the 148-160 GHz frequency range.     

300 GHz InP DHBT单片集成放大器

<正>太赫兹技术在成像雷达以及宽带通信等领域具有广阔应用前景。太赫兹功率放大器是太赫兹系统的核心单元。磷化铟双异质结双极型晶体管(InP DHBT)具有非常高的截止频率以及较高的击穿电压(相对Si/SiGe而言),适合于太赫兹功率放大器的研制,例如美国Teledyne公司利用InP DHBT工艺研制了220 GHz200 mW的功率MMIC。南京电子器件研究所基于76.2 mm(3英寸)InP DHBT圆片工艺,研制出300 GHz单片集成放大器。图     

100-GHz high-gain InP MMIC cascode amplifier

A high-gain InP monolithic millimeter-wave integrated circuit (MMIC) cascode amplifier has been developed which has 8.0 dB of average gain from 75 to 100 GHz when biased for maximum bandwidth, and more than 12 dB of gain at 80 GHz at the maximum-gain bias point, representing the highest gains reported to date, obtained from MMICs at W band (75-100 GHz). Lattice-matched InGaAs-InAlAs high-electron-mobility-transistors (HEMTs) with 0.1-μm gates were the active devices. A coplanar waveguide (CPW) was the transmission medium for this MMIC with an overall chip dimension of 600×500 μm     

38 GHz, coplanar waveguide GaAs MMIC amplifier

A GaAs MMIC coplanar waveguide amplifier is presented. It is realised on a 100 μm-thick substrate, thus leading to compatibility with microstrip circuits. An amplifier stabilisation technique is presented. It is shown that very good agreement between predictions and measurements may be obtained without any time-expensive bi- (tri-) dimensional electromagnetic simulation. The amplifier gain is ~15 dB at 38 GHz, and return losses are better than -18 dB     

High power-added efficiency MMIC amplifier for 2.4 GHz wirelesscommunications

This work describes the design and the measured performance of a high-efficiency monolithic microwave integrated circuit (MMIC) amplifier for wireless communications in the 2.4 GHz band. The monolithic technology employed in the circuit integration is based on standard 0.5-μm-gate-length MESFET. The design procedure is based on load-cycle graphic optimization of the transistor performance. On-wafer experimental characterization shows output power up to 24 dBm and excellent results of power-added efficiency up to 79% with 19.5 dBm output power at low drain bias voltage. The amplifier performance achieved and the circuit size, which is 1 mm², are suitable for use in the transmitter chains of wireless communication systems in the 2.4 GHz band     

Ultra-high gain, low noise monolithic InP HEMT distributed amplifier from 5 to 40 GHz

A monolithic 5-45 GHz distributed amplifier has been developed utilising 0.25 mu m InAlAs/InGaAs lattice matched HEMTs with a mushroom gate profile as active devices. A measured gain of 12.5+or-0.5 dB from 5 to 40 GHz and a measured noise figure of 2.5-4 dB in the Ka-band were achieved.<>     

An indium phosphide MMIC amplifier for 180-205 GHz

This paper describes a high-performance indium phosphide (InP) monolithic microwave integrated circuit (MMIC) amplifier, which has been developed for application in radioastronomy and imaging-array receivers. Implemented using coplanar waveguide, the six-stage amplifier exhibits 15 db gain, 10 dB input and output return loss, and low noise figure over the 180-205 GHz frequency range. Only one design pass was needed to obtain excellent agreement between the predicted and measured characteristics of the circuit, a unique achievement in this frequency band. The circuit is also the first 180-205 GHz amplifier designed for and successfully fabricated using TRW's standard 0.1-μm InP HEMT process     

Very broadband distributed amplifier to 75 GHz

Distributed amplifiers were fabricated successfully with a gain of 8 dB+or-1 dB in the frequency range 5-75 GHz measured on-wafer. The associated input and output matching is better than -10 dB. To the authors' knowledge this is a new performance record, not only for GaAs based circuits but also for InP based MMICs. The MMICs were realised in coplanar waveguide technology.<>     

Submillimeter-Wave InP MMIC Amplifiers From 300–345 GHz

In this letter, we describe the design, fabrication, simulation, and measured performance of a single-stage and three-stage 320 GHz amplifier using Northrop Grumman Corporation's (NGC) 35-nm InP high electron mobility transistor submillimeter-wave monolithic integrated circuit (S-MMIC) process. On-wafer S-parameter measurements using an extended waveguide band WR3 vector network analyzer system were performed from 210-345 GHz. We measured 5 dB of gain for the single-stage amplifier at 340 GHz and 13-15 of gain from 300-345 GHz for the three-stage S-MMIC amplifier.     

2～8GHz宽带GaN功率放大器MMIC

基于0.25μm Ga N HEMT工艺,研制了一款两级拓扑放大结构的2~8 GHz宽带功率放大器MMIC(单片微波集成电路)。MMIC所用Ga N HEMT器件结构经过优化,提高了放大器的可靠性和性能;电路采用多极点电抗匹配网络,扩展了放大器的带宽,减小了电路的损耗。测试结果表明,在2~8 GHz测试频带内,在脉冲偏压28 V(脉宽1 ms,占空比30%)时,峰值输出功率大于30 W,功率附加效率大于25%,小信号增益大于24 d B,输入电压驻波比在2.8以下,在6 GHz处的峰值输出功率达到50 W,功率附加效率达到40%;在稳态偏压28 V时,连续波饱和输出功率大于20 W,功率附加效率大于20%。尺寸为4.0 mm×5.0 mm。     

A DC-12 GHz monolithic GaAsFET distributed amplifier

A monolithic balanced traveling-wave amplifier stage using GaAs MESFET's is demonstrated. This amplifier achieves 7-9-dB gain with about 40-ps risetime and a -3-dB bandwidth of 12 GHz, on a 0.91 × 0.97-mm die. Its gain versus frequency is very flat, and |S11|, |S12|, and |S22| are less than 0.2 from 0-18 GHz. S-parameter uniformity and yield data are measured on-wafer with a special hybrid wafer probe.     

75 GHz 13.92 dBm InP DHBT 共射共基功率放大器

报道了基于InP基双屏质结双板晶体管(DHBT)工艺的四指共射共基75 GHz微波单片集成(MMIC)功率放大器,器件的最高振荡频率fmax为150 GHz.放大器的输出极发射极面积为15μm×4μm.功率放大器在75 GHz时功率增益为12.3 dB,饱和输出功率为13.92 dBm.放大器在72.5 GHz处输入为2 dBm时达到最大输出功率14.53 dBm.整个芯片传输连接采用共面波导结构,芯片面积为1.06 mm×0.75 mm.     

6-18 GHz高效率功率MMIC设计与测试

A three-stage monolithic microwave integrated circuit （MMIC） power amplifier from 6-18 GHz, which achieves high output power with excellent efficiency, is designed, fabricated and tested. Measured results show that the saturated output power and the small signal gain are about 32 dBm and 23 dB, respectively. Thus, the power added efficiency of about 28% indicates that it is useful in various communication systems.     

2?20 GHz hybrid GaAs MESFET distributed amplifier

A hybrid distributed amplifier using eight 75 ?m-gate periphery GaAs MESFETs is reported. The amplifier operates in the 2?20 GHz frequency range with 6.2 dB gain ±0.4 dB gain ripple.     

2?18 GHz distributed amplifier in hybrid form

Practical results for a four-stage hybrid distributed amplifier built on 25.4 mm-square alumina substrate using Avantek AT10600 MESFETs are presented. The power gain is (4.5±1.5) dB from 2 to 18 GHz with input and output return loss of better than 10 dB. The noise figure across that band is better than 6.3 dB.     

5 V, DC-12 GHz InP/InGaAs HBT amplifier

An InP/InGaAs HBT cascode amplifier operating from a single 5 V power supply is described. The circuit has a DC gain of 17.2 dB and a -3 dB frequency point of 12.3 GHz. This results in a gain-bandwidth product in excess of 90 GHz. The frequency response of the amplifier remains constant if the power supply voltage is as low as 4 V.<>     

5-60-GHz high-gain distributed amplifier utilizing InP cascodeHEMTs

A high-gain InP MMIC cascode distributed amplifier was developed which has 12 dB of gain from 5 to 60 GHz with over 20-dB gain control capability and a noise figure of 2.5-4 dB in the Ka band. Lattice-matched InAlAs/InGaAs cascode HEMTs on InP substrate with 0.25-μm gate length were the active devices. Microstrip was the transmission medium for this MMIC with an overall chip dimension of 2.3 mm×0.9 mm. The gain/noise figure advantages of the InP HEMT over the AlGaAs HEMT and the superior gain performance of the cascode HEMT over the common-source HEMT are demonstrated     

A fully integrated 0.5-5.5 GHz CMOS distributed amplifier

A fully integrated 0.5-5.5-GHz CMOS-distributed amplifier is presented. The amplifier is a four stage design fabricated in a standard 0.6-μm three-layer metal digital-CMOS process. The amplifier has a unity-gain cutoff frequency of 5.5 GHz, and a gain of 6.5 dB, with a gain flatness of ±1.2 dB over the 0.5-4 GHz band. Input and output are matched to 50 Ω, with worst-case return losses on the input and output of -7 and -10 dB, respectively. Power dissipation is 83.4 mW from a 3.0 V supply, input-referred 1-dB compression point varies from +6 dBm at 1 GHz to 8.8 dBm at 5 GHz. From a circuit standpoint, the fully integrated nature of the amplifier on the given substrate results in a heavily parasitic-laden design. Discussion emphasis is therefore placed on the practical design, modeling, and CAD optimization techniques used in the design process