直流磁控溅射法在PET基板上制备AZO薄膜

室温下用直流磁控溅射法在PET塑料基板上制备氧化锌薄膜及掺铝氧化锌AZO(ZnO∶Al)薄膜.通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、四点探针仪、霍尔效应仪及光谱仪等装置,考察了氧分率、溅射功率及铝掺杂量等工艺参数对薄膜微观结构和光电性能的影响.结果表明:AZO薄膜晶体结构为纯ZnO的六角纤锌矿结构.随着Al掺杂量增多,AZO薄膜导电性增加,透光率下降.在氧分率为8.2％,ZnO(40 nm)/Al(6 nm)三层膜条件下,得到电阻率为5.66×10-2Ω·cm,可见光范围内透光率约为80％的AZO薄膜.     

共溅射法制备AZO薄膜及其光电性能的研究

目的研究Al靶直流溅射功率对Al掺杂ZnO(AZO)薄膜光电性能的影响。方法以金属Al和ZnO陶瓷作为靶材,采用直流与射频双靶磁控共溅射的方法,在玻璃基片上制备AZO薄膜。通过改变Al靶直流溅射功率,获得不同的薄膜。采用X射线衍射仪(XRD)、光电子能谱仪(XPS)、原子力显微镜(AFM)、紫外-可见分光光度计(UV-Vis)、四探针测试仪,对薄膜的微观形貌结构及光电性能进行表征和分析。结果所制备的AZO薄膜均具有C轴取向生长的六角纤锌矿结构,在可见光区域平均透过率超过90%,AZO薄膜的吸收边相比于ZnO薄膜出现了蓝移。当Al靶溅射功率为18 W时,AZO薄膜的最低电阻率为2.49×10~(-3)?·cm,品质因子为370.2 S/cm。结论 Al直流溅射功率对AZO薄膜光电性能的影响较大,溅射功率为18 W时,制备的AZO薄膜性能最优。     

溶胶-凝胶法制备的ZnO:Al薄膜的微观结构及光学、电学性能

采用溶胶-凝胶法制备了ZnO:Al(AZO)透明导电薄膜．通过X射线衍射(XRD)、紫外-可见分光光度计 (UV-Vis)、扫描电镜(SEM)和电阻测量装置,考察了Al掺杂量、退火温度及镀膜层数等工艺参数对薄膜的微观结构和光电性能的影响．结果表明,退火温度越高,多晶AZO薄膜的(001)晶面择优取向生长的趋势越强,并且随退火温度升高,薄膜的晶粒尺寸增大,透光率增加．薄膜晶体结构为纯ZnO的六角纤锌矿结构．在掺杂浓度1％(摩尔分数)、退火温度500℃及镀膜层数10的条件下,得到了电阻率为3．2×10-3Ω·cm、可见光区的平均透射率超过90％的AZO薄膜．     

溅射条件对ZnO:Al薄膜生长和性能的影响（英文）

采用中频磁控溅射法在玻璃基体上制备Al掺杂ZnO薄膜(AZO),分别利用扫描电子显微镜(SEM)、原子力显微镜(AFM)、X射线衍射仪(XRD)、分光光度计及霍尔测试系统研究不同沉积条件如样品台转速和靶-基距离对薄膜光学、电学、微观形貌及晶体结构的影响。XRD结果表明,所有AZO薄膜都呈c轴择优取向,薄膜的结晶度随着样品台转速的增大而降低,且晶粒呈非平衡状态生长。而在不同的靶-基距离时,薄膜具有相似的微观结构和表面形貌。当样品台转速为0、靶-基距离为7 cm时,AZO薄膜的光电性能最好,载流子浓度和霍尔迁移率分别为5.9×1020 cm-3和13.1 cm2/(V·s)。研究结果表明,样品台转速是影响AZO膜的结构和性能的主要因素。     

射频反应磁控溅射法制备ZnO:Al透明导电薄膜的光电性能

室温下采用射频(RF)反应磁控溅射技术在玻璃衬底上沉积具有(002)择优取向的透明导电Al掺杂ZnO(AZO)薄膜。XRD结果表明,制备的AZO薄膜为多晶,具有c轴择优取向。退火处理能提高其结晶度。在Al靶射频功率为40W,ZnO靶射频功率为250W,氩气流量为15mL/min的条件下,获得200nm厚的薄膜电阻率约3.8×10-3?·cm,在可见光范围内有很好的光透过率。     

氩气流量对掺铝氧化锌薄膜光电性能的影响

采用双靶射频磁控溅射沉积掺铝氧化锌(AZO)薄膜作为铜锌锡硫(CZTS)太阳能电池的低阻窗口层。研究了在溅射功率60 W、溅射时间30 min的工艺条件下,氩气(Ar)流量对AZO薄膜的结晶性、表面形貌、光透过率、电阻率、载流子浓度等光电性能的影响。结果表明,最优Ar气流量为22 cm~3/min,该流量下AZO晶粒大,结晶性能好,AZO薄膜的载流子浓度高,电阻率小,薄膜在400~1100 nm波长下的光透过率为87.2%。     

氧化锌铝陶瓷(AZO)靶材的制备及其电阻性能的测定

采用二步烧结技术制备AZO陶瓷靶材,并采用XRD、SEM和EDS对AZO陶瓷靶材进行表征,研究AZO靶材的电阻性能。结果表明:当Al的掺杂量w(Al2O3)为0.5%时,AZO靶材出现第二相ZnAl2O4;随Al掺杂浓度增加,ZnAl2O4的衍射峰强度逐渐增强,ZnO晶粒尺寸逐渐减小;随着第二步烧结温度θnd的升高,AZO靶材的晶粒尺寸逐渐增大,相对密度也随之增加。靶材的电阻率随θnd增加而降低,且随掺杂浓度升高而增加;在第一步烧结温度θst=1 400℃,升温速率vst=10℃/min,第二步烧结温度θnd=1 350℃和t nd=16 h烧结条件下,AZO陶瓷靶材(w(Al2O3)=1.5%)的电阻率仅为2.9×10-2Ω·cm。     

聚丙烯酰胺凝胶法制备氧化锌铝(AZO)粉体

采用聚丙烯酰胺凝胶法制备Al掺杂ZnO(AZO)前驱体,在500和600℃下煅烧获得AZO粉体。采用DSC、XRD、SEM、UV-vis吸收和荧光发光(PL)对粉体进行表征,研究Al掺杂浓度对AZO粉体光学性能的影响。结果表明:在600℃煅烧温度下,Al3+的固溶度可高达8%(摩尔分数),掺杂后的AZO粉体晶粒尺寸明显减小;随着掺杂浓度提高,AZO粉体的紫外吸收波长先"蓝移"而后"红移",当Al掺杂浓度为5.5%(摩尔分数)时,紫外吸收波长最短,为367 nm(3.38 eV);未掺杂与Al掺杂的ZnO粉体均具有406 nm的近边紫外峰和430 nm的蓝光发射峰。     

掺铝氧化锌薄膜的红外性能及机制

采用中频交流磁控溅射氧化锌铝(ZnO 2％Al2O3)陶瓷靶材的方法制备了掺铝氧化锌ZAO(ZnO：Al)薄膜．利用红外光谱仪测试了薄膜的红外反射性能,研究了薄膜厚度、基体温度和氩气压力对ZAO薄膜红外反射性能的影响规律,确定了制备具有高红外反射率的ZAO薄膜的工艺参数．     

基片温度对Co掺杂ZnO薄膜室温铁磁性的影响

采用磁控共溅射法在Al2O3(0001)基片上沉积了Zn1-xCoxO(x=0.08～0.3%)薄膜,研究了基片温度对Co掺杂ZnO薄膜结构和磁性的影响.结果表明:Al2O3(001)基片很好地诱导了ZnCoO薄膜(002)取向生长,并且所有的薄膜均显示室温铁磁性.较低的基片温度不仅能有效抑制薄膜中Co2O3杂质相的产生,而且薄膜磁矩较大.紫外-可见光谱也表明,薄膜中Co2 取代了ZnO中Zn2 的位置.     

Room temperature deposition of Al-doped ZnO thin films on glass by RF magnetron sputtering under different Ar gas pressure

Al-doped ZnO (AZO) thin films were deposited on glass substrates at room temperature by RF magnetron sputtering. The effects of Ar gas pressure on the structural, optical, and electrical properties were investigated. As the Ar gas pressure increased, the resistivities of the AZO thin films increased, the mobilities decreased, and the carrier concentrations were constant. X-ray photoelectron spectroscopy (XPS) showed that higher Ar gas pressures promoted O-Zn bond formation and reduced the number of oxygen vacancies. The reduction in mobility, which increased the resistivity, was attributed to increased lattice scattering by the oxygen atoms. In AZO thin films deposited at room temperature, the conduction characteristics are primarily influenced by the mobility.     

EFFECT OF Ar PRESSURE ON STRUCTURAL AND ELECTRICAL PROPERTIES OF Cu FILMS DEPOSITED ON GLASS BY DC MAGNETRON SPUTTERING

Cu films with thickness of 630-1300nm were deposited on glass substrates without heating by DC magnetron sputtering in pure Ar gas. Ar pressure was controlled to 0.5, 1.0 and 1.5Pa respectively. The target voltage was fixed at 500V but the target current increased from 200 to 1150mA with Ar pressure increasing. X-ray diffrac-tion, scanning electron microscopy and atomic force microscopy were used to observe the structural characterization of the films. The resistivity of the films was measured using four-point probe technique. At all the Ar pressures, the Cu films have mixture crystalline orientations of [111], [200] and [220] in the direction of the film growth. The film deposited at lower pressure shows more [111] orientation while that deposited at higher pressure has more [220] orientation. The amount of larger grains in the film prepared at 0.5Pa Ar pressure is slightly less than that prepared at 1.0Pa and 1.5Pa Ar pressures. The resistivities of the films prepared at three different Ar pressures re     

Study on adhesion and electro-optical properties of ITO films on flexible PET substrate

High-quality ITO films on flexible PET substrate were prepared by RF magnetron sputtering at low deposition temperature with different Ar gas sputtering pressure.Adhesion and electro-optical properties of ITO films were investigated as a function of Ar partial pressure.The sputtering conditions provide very uniform ITO films with high transparency (＞85% in 400-760 nm spectra) and low electrical resistivity (1.408×10-3-1.956×10-3 Ω·cm).Scratch test experiments indicate that there is a good adhesion property between ITO films and PET substrate, the critical characteristic load increases from 16.5 to 23.2 N with increasing Ar sputtering pressure from 0.2 to 1.4 Pa.     

Characteristics of atomic layer deposited transparent aluminum-doped zinc oxide thin films at low temperature

Various aluminum-doped zinc oxide(AZO) films were prepared on Si substrate by atomic layer deposition(ALD) at 100℃. The effect of the composition of AZO films on their electrical, optical characteristics,structural property and surface topography was investigated. The appearance of electrical resistivity shows their semiconducting properties. In most of the visible light band, all the AZO films present transparency of more than 80%. Al doping suppresses the AZO film crystallization.When the Al doping concentration increases up to 3.95 at%, the AZO film has some small multicrystal grains with random orientation. Al doping improves the roughness of i-ZnO film. The root mean square(RMS) roughness of samples prepared by ALD is much smaller than that prepared by radio-frequency magnetron sputtering reported.     

PREPARATION OF NANO-CRYSTALLINE Fe-Cu THIN FILMS AND THEIR MAGNETIC PROPERTIES

Fe-Cu thin films of 0.2μm in thickness with different Cu contents were prepared by using r.f. magnetron sputtering onto glass substrate. The effect of sputtering param-eters, including Ar gas pressure and input rf power, on the structure and magnetic properties was investigated. It was found that when the power is lower than 70 W, the structure of the films remained single bcc-Fe phase with Cu solubility of up to 50at.%. TEM observations for the bcc-Fe phase showed that the grain size was in the nanometer range of less than 20nm. The coercivity of Fe-Cu films was largely affected by not only Ar gas pressure but also rf power, and reached about 2.5Oe in the pressure of 0.67-6.67Pa and in the power of less than WOW. In addition, saturation magnetization, with Cu content less than 60at. %, was about proportional to the con-tent of bcc-Fe. When Cu content was at 60at.%, however, saturation magnetization was much smaller than its calculation value.     

Process monitoring during AlN deposition by reactive magnetron sputtering

The effect of pressure on the reactivity of sputtered Al during reactive magnetron deposition was monitored by optical emission spectroscopy (OES) and a Langmuir probe. The deposition experiments were carried out varying the total pressure from 0.1 Pa to 1.2 Pa in an Ar/N₂ 7:1 flow ratio gas mixture. The deposited layers were analyzed by scanning electron microscopy (SEM) + energy dispersive analysis (EDS), glancing angle X-ray diffractometry (GAXRD) and X-ray photoelectron spectroscopy (XPS). Analysis of the films formed was based on the process parameters via plasma characterization. A correlation was found between the OES results and the amount of Al deposited. Under the present conditions, the base pressure was found to have a significant effect on the nature of the products deposited.     

氩气流量对等离子体喷射法制备的金刚石膜形核的影响

采用100kW级直流电弧等离子喷射法进行金刚石膜沉积,阐述了氩气对维持电弧稳定的重要作用,讨论了氩气流量对衬底表面轰击的影响,氩气流量和不同电弧分区对形核期金刚石表面形貌和晶粒尺寸的影响,以及时间和不同预处理方式对金刚石形核密度的影响。结果表明:随着氩气流量的增加,氩气对衬底表面的轰击作用增强,金刚石膜表面形貌呈现从(111)到(100)的变化规律,金刚石晶粒尺寸减小,晶形变得不完整;弧边位置(100)取向更明显;使用金刚石微粒对衬底进行研磨预处理能显著提高金刚石的形核密度。     

Properties of multilayer gallium and aluminum doped ZnO(GZO/AZO) transparent thin films deposited by pulsed laser deposition process

Multilayer gallium and aluminum doped ZnO (GZO/AZO) films were fabricated by alternative deposition of Ga-doped zinc oxide(GZO) and Al-doped zinc oxide(AZO) thin film by using pulsed laser deposition(PLD) process. The electrical and optical properties of these GZO/AZO thin films were investigated and compared with those of GZO and AZO thin films. The GZO/AZO (1:1) thin film deposited at 400 °C shows the electrical resistivity of 4.18×10^?4 ωcm, an electron concentration of 7.5×10²⁰/cm³, and carrier mobility of 25.4 cm²/(V·s). The optical transmittances of GZO/AZO thin films are over 85%. The optical band gap energy of GZO/AZO thin films linearly decreases with increasing the Al ratio.     

磁控溅射中工作压强对钛膜沉积的影响

为了研究在磁控溅射工艺中溅射电流和溅射时间恒定的情况下,氩气工作压强的变化对钛膜在基底表面沉积的影响,通过用原子力显微镜分析钛膜的厚度和均方根粗糙度的方法来进行.结果表明:工作压强达到1.1Pa后, Ti膜的厚度及均方根粗糙度都随压强的增大而减小.由此说明,工作压强的变化对钛膜沉积有较大影响.     

气压对离子源增强磁控溅射制备氮化铝薄膜的影响

目的 制备性能优异的氮化铝薄膜.方法 采用射频感应耦合离子源辅助直流磁控溅射的方法 制备氮化铝薄膜,在不同的气压下,在Si(100)基片和普通玻璃上生长了不同晶面取向的氮化铝薄膜.使用X射线衍射仪(XRD)、场发射扫描电镜(FESEM)、原子力显微镜(AFM)分析氮化铝薄膜的结构、晶面取向、表面形貌及薄膜表面粗糙度,使用紫外可见分光光度计测定薄膜的透过率,并计算薄膜的禁带宽度.研究气压的大小对磁控溅射制备氮化铝薄膜微观结构的影响.结果 在各气压下,薄膜生长以(100)面取向为主.在0.7Pa前,(100)面的衍射峰强度逐渐增强,0.7 Pa之后减弱.(002)面衍射峰强度在0.6Pa之前较大,0.6Pa之后变小.各气压下薄膜表面均方根粗糙度均小于3nm,且随着气压的增大先增大后减小,0.7 Pa时最大达到2.678nm.各气压下所制备薄膜的透过率均大于60%,0.7Pa时薄膜的禁带宽度为5.4eV.结论 较高气压有利于(100)晶面的生长,较低气压有利于(002)晶面的生长;(100)面衍射峰强度在0.7 Pa时达到最大;随气压的增大,薄膜表面粗糙度先增大后减小;所制备的薄膜为直接带隙半导体薄膜.