高压真空灭弧室的电场设计的新方法

高压真空灭弧室设计的关键是电场的设计。提出一种高压真空灭弧室电场设计的新方法。根据击穿弱点理论，确定有均压屏蔽罩的高压真空灭弧室结构，然后应用有限元法和最优化理论，推导出真空灭弧室的电场数学模型进行优化。通过求解灭弧室内部的静电场定解问题，优化其内部几何参数，使灭弧室内部电场较均匀，电场强度的峰值出现在“第二辅助间隙”中。优化的参数结构提高了灭弧室的耐压能力。     

高压真空灭弧室内部电场分布的影响因素

为了解高电压真空灭弧室内部的电场分布情况,建立了真空灭弧室的电场数学模型。应用电场数值分析方法和有限元软件详细计算不同屏蔽罩与触头尺寸对真空灭弧室内部电场分布影响的结果表明,因高电压真空灭弧室开距较大,触头间隙不再是场强集中的区域,在高压真空灭弧室小型化设计过程中,除考虑电极间的绝缘外,更需考虑电极与屏蔽罩之间的绝缘。合理设计屏蔽罩的尺寸、位置和触头的形状可有效改善灭弧室内部的电场分布,提高真空灭弧室的耐压能力,从而为国内72.5kV以上电压等级真空灭弧室的研制提供了理论依据。     

72.5kV真空灭弧室电位和电场分布研究

为分析72.5 kV真空灭弧室的电位分布和电场分布及其影响因素,建立了其轴对称有限元分析模型,计算了其电位分布和电场分布,研究了真空击穿的面积效应,并分析了主屏蔽罩的结构尺寸及多个屏蔽罩对真空灭弧室内部电场分布的影响。结果表明:真空灭弧室动静触头之间、触头和屏蔽罩之间的电位变化比较显著,灭弧室内部电场分布不均匀;随着触头间隙距离、触头半径及倒角部分曲率半径的增大,触头表面有效面积将增大,而灭弧室内部最大场强将有所减小;增大主屏蔽罩的半径和长度,可以使屏蔽罩两端的场强有所减小,在真空灭弧室内安装多个屏蔽罩,可以改善内部电场分布。计算结果可为高电压等级真空灭弧室的优化设计提供参考。     

Effect of electrode surface roughness on electrical breakdown in high voltage apparatus

This paper considers the statistical theory of electrical breakdowns in high voltage (HV) devices. The extended probability distribution of breakdown is deduced for nonuniform gaps. The breakdown of high voltage apparatus is sensitive to local irregularity of the electric field which may result from the presence of defects such as surface roughness. The surface roughness leads to existence of localized microscopic projection with local electric field strength at the projection top larger than the average field at the electrode surface. The link between parameters determining the probability of electrical breakdown and the parameters determining microscopic geometry of electrode surface is obtained. In this paper a simplified breakdown model is used as a basis for statistical treatment. According to the model the breakdown proceeds if the electric field strength at the projection top exceeds the critical value. The method of dielectric strength calculation for HV devices using a simplified model of breakdown is presented. The paper gives an example of calculation of the breakdown voltage for vacuum switch TVS-43. Results of calculations are compared with available experimental data and Weibull distribution     

Dielectric strength and statistical property of single and triple-break vacuum interrupters in series

The maximum possible improvement factor of vacuum circuit breaker (VCB) with multiple breaks compared with one-break, which had the same total gap length, was deduced. Based on the research on the breakdown weak points in high voltage vacuum gaps, a theoretic model was set up for describing the statistical property of multi-break VCB. Dielectric experiments were carried out on a commercial vacuum interrupter arrangements with single break or triple breaks in series under lightning impulse voltage. It shows that the more numbers in series are, the higher the breakdown voltage improvement factor is. The statistical results show that the triple-break vacuum interrupters in series have lower breakdown probability compared with a single-break one. It can be demonstrated in a preliminary study that the experimental results confirm the previous theoretical studies.     

高电压真空灭弧室触头间长间隙的真空绝缘特性

对高电压真空灭弧室触头间长真空间隙(40 mm及以上)的真空绝缘特性进行了讨论,包括击穿电压(直流电压,工频交流电压和标准雷电冲击电压)与触头开距的关系以及长真空间隙的老炼特性.目前对72/84 kV级高电压真宅灭弧室触头间隙范围(40mm及以上)的长真空间隙绝缘特性有了一定的了解,而126 kV级高电压单断口真空灭弧室触头问长真空问隙范围(60mm及以上)的绝缘特性研究还有待深入开展.     

模块化多断口真空断路器电位和电场分布研究

为分析基于光控模块的三断口真空断路器的静态电位分布和真窄灭弧室的电场分布,建立了模块化真空断路器的三维有限元分析模型.计算了竖直型和U型布置时的三断口真空断路器电位分布,采用子模型法分析了真空灭弧室内部的电场分布,同时进行了三断口真空断路器工频分压特性试验.计算与试验结果对比表明:两种布置方式下,高压端断口的试验与计算...     

杯状纵磁真空灭弧室开断能力与触头直径和触头开距关系的试验比对

对杯状纵磁真空灭弧室的极限电流开断能力与触头直径和触头开距间的关系I=k×D2×Bz0.4进行了试验验证。当触头直径分别为48,58,66mm时,触头开距设定为8,11,14mm,对9只真空灭弧室试品在振荡回路上进行极限开断能力试验;用三维有限元方法对9种情况下的纵向磁场进行了计算;将计算结果带入公式与试验结果及灭弧室开断能力标定值进行比较,考虑试验的误差,认为公式有参考意义。     

大开距纵磁结构触头磁场特性的数值分析

通过分析几种用于中压真空灭弧室中的触头结构,探讨了将它们应用在高压真空灭弧室中的可能性。并用有限元的方法对单极线圈式和杯状纵向磁场触 头结构在大开距条件下的磁场特性进行了仿真计算。采用改变部分触头结构参数的方法来优化磁场分布,在分析计算结果的基础上探讨了将它们应用于高压真空灭弧室中的可行性。结果表明,在大开距条件下即使经过优化,1/3匝线圈式纵磁触头结构和杯状纵磁触头结构所产生的磁场也不足以控制真空电弧,而1/2匝线圈式纵磁触头有较强的纵向磁场,适合于大电流的开断。     

真空灭弧室静态击穿电压的统计估计

基于统计学原理,借助于计算机辅助电场分析的手段,可以由少量的试验结果估计出大量真空灭弧室的静态击穿电压。     

内部炭化对复合绝缘子绝缘性能的影响研究

随着复合绝缘子在高压线路中的广泛使用,其绝缘击穿事故也越来越多,其中内部炭化是引起绝缘击穿的重要原因之一。为了了解内部炭化对复合绝缘子绝缘性能的影响,建立了以复合绝缘子为研究对象的静电场有限元模型。基于电场数值分析理论,采用有限元分析法实现了对复合绝缘子电位与电场分布的精确计算,计算结果表明在两端金具与棒芯接触处场强最大。同时,对炭化后复合绝缘子的电压分布的分析计算表明,绝缘子的炭化区域基本丧失绝缘性能,并将加速未炭化部分的老化;高压端前数片绝缘子的电压比正常值高出27．09％,有绝缘击穿的可能;炭化区域绝缘子电压出现畸变,局部放电的可能性大大增加。     

单断口和三断口串联真空灭弧室绝缘击穿统计特性

建立了由3个真空灭弧室串联后组成的三断口真空灭弧室模型。通过施加工频交流高压和冲击高压，重点研究在相同的总开距下，与单断口真空灭弧室模型相比，三断口真空灭弧室模型的静态击穿电压增益特性和静态击穿统计特性，包括三断口真空灭弧室在工频交流电压下的静态电压分布特性。试验研究表明，不同的串联布置方式表现出不同的断口电压分布特性。断口电压分布特性越均匀，则击穿电压增益倍数越高。击穿统计特性试验研究表明，三断口真空灭弧室相比单断口真空灭弧室具有更低的击穿概率。试验结果与理论分析相吻合，证明了理论模型的有效性。     

基于比例差分探头的真空灭弧室真空度在线监测

采用了新型的比例差分双通道电场探头,通过监测真空灭弧室屏蔽罩电位和周期性高频脉冲电压,并将这两个测量值与实际电压值取比率,经过标定后,将该比率作为监测参数,来分析真空灭弧室真空度的变化趋势。现场试验表明,使用该探头可有效消除各相系统电压波动和灭弧室外围空间电场对测量精度的影响,实现有效测量,使用该方法的测量系统具有实际应用的价值,可完成真空灭弧室真空度在线监测任务。     

高压真空灭弧室电场的计算分析及结构改进

应用有限元法对外屏蔽罩结构真空灭弧室内部电场分布进行了计算和分析,计算中设电位边界条件不对称,且悬浮屏蔽罩的电位为未知量,并计及电极表面带电粒子的影响,得出了灭弧室中电场分布严重不对称影响灭弧室的耐压和开断性能的结果,进而提出了改善电场分布的措施。     

Modeling of DC Flashover on Ice-Covered HV Insulators Based on Dynamic Electric Field Analysis

In this paper, a model based on dynamic electric field analysis has been developed to predict the flashover voltage of the ice-covered HV insulators, under dc voltage. The potential and electric field calculation models before and after air gap breakdown are built respectively based on finite element method (FEM). The arc initiation process is determined based on the model before air gap breakdown. The critical applied voltage and leakage current to maintain an arc with certain length are obtained based on the electric field calculation model after air gap breakdown and the U-I characteristic of the arc. Moreover, the improved Hampton criterion has been employed to determine the critical flashover of the ice-covered insulator. The results obtained from the dynamic electric field analysis model have been compared with other mathematical and experimental results of other researchers and got a great agreement.     

Breakdown conditioning characteristics of long gap electrodes in a vacuum

An improvement in dielectric strength is required in vacuum circuit breakers (VCBs) intended for use in higher voltage systems. In order to develop higher voltage VCBs, it is important to improve the dielectric strength in a vacuum based on consideration of the vacuum breakdown mechanism. Particularly for gaps longer than 10 mm, little is known about the breakdown mechanisms and their quantitative analyses in a vacuum. This paper discusses the breakdown conditioning characteristics of long gap electrodes, under a non-uniform electric field in a vacuum. We treat gap lengths of up to 50 mm in this paper. The conditioning characteristics are investigated under impulse voltage applications. A negative standard lightning impulse voltage was applied to rod-plane electrodes made of Cu-Cr and SUS304 for different tip radii and gap distances until the conditioning effect was completed. We observed illumination spots on electrodes at each breakdown during the conditioning process and calculated the corresponding breakdown field strengths. Experimental results revealed that the tendency of breakdowns associated with long gaps is different from that for the short gaps. As a result, we clarified that the breakdown field strengths are nearly constant at 110-120 kV/mm at the distances longer than 10 mm, and the breakdown field strength is at its maximum when the gap distance is about 5 mm.     

Relation between breakdown voltage and prebreakdown current in vacuum gap

Two different surface treatments (mechanical polishing, thin film deposition) were performed on cathode surfaces, and the field emission currents from the cathodes were measured with a microchannel plate. In order to discuss the relationship between the breakdown voltage and prebreakdown current in the vacuum gap, the breakdown voltage was measured after field emission measurement. The V–I characteristics of the field emission and breakdown voltage were influenced by surface treatment, and the breakdown voltages of mechanical polished cathodes were lower than those of the thin film deposited cathodes. It was found that the probability of breakdown increased when the field emission current reached 10^–11 A. Atomic force microscope (AFM) measurements showed numerous protrusions on the cathode surface in the case of thin film deposition treatment, but we estimated by the finite element method that these protrusions make the field enhancement effect low. It was inferred that the breakdown voltage in vacuum gaps could be increased by the thin film deposition method. © 2000 Scripta Technica, Electr Eng Jpn, 131(4): 11–18, 2000     

高压真空器件内绝缘击穿及老炼处理

为解决一种工作在几μs宽高压脉冲下高压真空器件的击穿问题,据其绝缘结构特点确定计算边界条件并用有限元法计算了阴极区域的电场分布;采用高压真空器件解剖、扫描电镜分析和高压脉冲耐压试验分析了高压真空器件内的真空击穿、陶瓷击穿。结果证明采取高压脉冲老炼方法对器件加固后,可减少器件的高压击穿几率,提高耐高压能力和工作可靠性。     

1.5 MV高压发生器的工艺改进和仿真计算

为了使应用于火电厂脱硫脱硝的大功率电子加速器高压发生器能稳定运行,介绍了电子加速器的结构和高压发生器的特点,并针对高压发生器经常发生打火造成高压硅堆和跳线损坏的问题,提出和实施了以下改进措施:通过改变高压电极的设计结构改善高压电极附近电场强度的分布;增加高压硅堆管芯数量及减小高压硅堆环氧浇注层厚度。有限元仿真和高压实验的结果表明,电压的不均匀降落和高压硅堆的工艺是影响高压发生器稳定性和可靠性的原因。实施改进方案后,明显提高了高压发生器的击穿电压且达到了其设计指标,大大提高了高压发生器运行的稳定性和可靠性。     

具有串并联结构的模块化多断口真空断路器静动态电压分布特性

为向基于光控模块的多断口真空断路器的静态、动态绝缘特性设计提供参考,建立三维有限元分析模型,计算126 kV U型布置的三断口真空断路器的静态电位分布和真空灭弧室内部的电场分布。利用110 kV振荡型合成试验回路,进行低电压、小电流三断口串联断路器样机的开断试验,测量三断口的瞬态恢复电压分布。计算和试验结果表明:三断口真空断路器的静态和动态电压分布不均匀,高压端断口的静态分压超过65%,串联样机进行试验时底部可以不安装支架;高压端断口的动态分压(瞬态恢复电压峰值)超过60%,1 000 pF均压电容可以满足低电压、小电流开断均压要求,高电压、大电流开断情况需进一步验证。