光子晶体双通道可调谐偏振滤波器的设计

通过对设计出的一维掺杂光子晶体的数值计算和理论分析,得出了两个偏振态缺陷模的透射峰的变化特征为：TM波其缺陷模透射峰在入射角大于0.75（rad）范围内有多条明显的缺陷模透射峰带,而TE波在入射角大于0.75(rad) 范围内没有缺陷模透射峰;TM波缺陷模透射峰的波长 随杂质光学厚度 近似呈线性变化,并且同一空气膜厚度值可以截到两个波长不同的透射峰。以此为基础设计出：滤波通道波长可调范围大于100nm 、滤波通道的半高宽可调范围在1 nm — 6nm、滤波通道透射峰值大于0.98的一维光子晶体双通道可调谐偏振滤波器。     

可调谐双通道光子晶体滤波器的设计

通过对设计出的一维掺杂光子晶体的数值计算和理论分析,得出:双通道透射峰的波长随杂质光学厚度呈线性变化和双通道透射峰的半高宽随光子晶体折射率n2的增加而减小.以此为基础,设计出可调波长范围达140 nm、滤波通道半高宽的可调范围在1～5 nm、滤波通道透射峰值大于0.98的一维光子晶体双通道可调谐滤波器.     

杂质色散对一维光子晶体偏振滤波特性的影响

利用杂质的色散关系和特征矩阵法研究了一维光子晶体中TE波和TM波的滤波通道的变化特征,碍出了TE波和TM波的滤波通道随色散强度、入射角、杂质厚度的变化规律.色散强度、入射角、杂质厚度能够对一维光子晶体中TE波和TM波的滤波通道产生明显的影响.利用TE波TM和波滤波通道随色散强度、入射角、杂质厚度的变化规律,可以有效地实现对TE波和TM波滤波频率和频率宽度的控制.     

含负折射率光子晶体缺陷模偏振态的吸收特性

为了研究含负折射率掺杂光子晶体各缺陷模偏振态的吸收特性,引入复折射率并利用光学特征矩阵法进行分析,结果表明：杂质的消光系数对TE波和TM波的缺陷模均有影响,但对TE波的影响更为明显;当消光系数一定时,对TE波而言,中心波长相对较大的两个缺陷模透射峰值均随入射角的增加而迅速减小,而TM波的三个缺陷模透射峰均随入射角的增加而增加。利用这一特性可以设计双（多）通道光子晶体偏振滤波器。     

一维各向异性掺杂光子晶体的缺陷模特性

利用传输矩阵的方法给出了光波在一维各向异性掺杂光子晶体中传播的透射率,研究了缺陷模的相关特性,经数值模拟计算得出:光通过一维各向异性掺杂光子晶体后,透射波中TE波和TM波存在明显的缺陷模,缺陷模的中心波长位置随光波入射角的改变而不同,两个缺陷模能完全分开;TE波的缺陷模中心波长位置随着光学厚度的增大向短波方向移动,TM...     

一种新型可调谐光子晶体滤波器的理论研究

建立了可调谐光子晶体滤波器的设计标准,作为设计的依据.通过数值计算和理论分析,得出了一维掺杂光子晶体的缺陷模随杂质光学厚度L和光子晶体折射率n2的变化特征.设计出的可调谐一维光子晶体滤波器在理论上能很好地满足设计标准,滤波通道的半高宽(FWHM)可调范围在1～4 nm间,波长λ可调范围达300 nm,透射率峰值大于0.95.     

杂质吸收对光子晶体缺陷模偏振态的影响

引入复折射率并利用特征矩阵法,研究了杂质的吸收对TE波和TM波缺陷模透射峰的影响.得出:杂质的消光系数对TE波和TM波的缺陷模透射峰都有显著的影响,但对TE波缺陷模的影响比对TM波缺陷模的影响更为明显.当消光系数一定时,TE波的缺陷模透射峰随入射角的增大而迅速减小,而TM波的缺陷模透射峰随入射角的增大而增大.利用这一特性可以设计光子晶体偏振滤波器.     

一维平板掺杂光子晶体的滤波特性

利用电磁波在一维平板掺杂光子晶体中横向受限的条件,推导出电磁波在一维平板掺杂光子晶体中各个模式满足的关系式。研究了TE波和TM波各模式的缺陷模随模式量子数和杂质光学厚度的变化规律。利用缺陷模随模式量子数的变化规律可以实现多通道滤波,利用缺陷模随杂质光学厚度的变化规律可以实现调谐滤波。     

负折射率缺陷层的一维各向异性光子晶体缺陷模特性

本文提出了负折射率缺陷层的一维各向异性光子晶体结构,利用传输矩阵的方法给出了TE波和TM波的透射率,结果表明在TE波中出现两个及多个缺陷模,TM波存在单缺陷模,两种偏振状态不同的透射波的缺陷模能分开,得出了光通过负折射率缺陷层的一维各向异性光子晶体后TE波和TM波随入射角的变化特性、随缺陷层厚度的的变化特性。这些特性用于光子晶体多通滤波、光子晶体偏振和激光谐振腔等器件的设计具有重要意义。     

一维掺杂光子晶体缺陷模的全貌特征

通过一维掺杂光子晶体缺陷模的三个不同角度的立体图以及它们对应的俯视切面图,全面地研究了缺陷模随杂质光学厚度、杂质折射率以及光子晶体折射率的变化关系,得出了一维掺杂光子晶体缺陷模的全貌特征,并得到以下重要结论:缺陷模透射峰随杂质光学厚度变化呈周期性的出现,在同一周期上缺陷模的波长随杂质光学厚度呈线性变化;缺陷模透射峰的半高宽度随杂质折射率的增加而减小,但陷模透射峰的高度不受杂质折射率变化的影响;光子晶体的折射率对缺陷模透射峰的峰高和半高宽度都有显著的影响.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks