高阻硅基铝硅合金弹性膜MEMS相移器

级联式MEMS相移器可通过悬浮于共平面波导之上的微机械可调电容的变化,来改变传输线的特性阻抗和相速,达到相移的目的.文中讨论了MEMS相移器特性对微机械电容和下拉电压的要求,并通过轻质量的铝硅合金弹性膜,获得了较低的下拉电压.测试结果表明,相移器的下拉电压不大于40V,且当控制电压大于10V时,即有明显的相移.该MEMS相移器制备于电阻率大于4000Ω*cm的高阻硅衬底上,获得了较好的传输特性,在整个测试频段1～40GHz,S21均小于3dB,并在25V时获得了大于25°的相移量.     

低电压驱动的硅基Ka波段级联式MEMS移相器

通过在共平面波导上周期性地分布微机械电容,外加电压驱动改变电容值,可实现级联式MEMS移相器.本文讨论了优化相移特性对共平面波导特性阻抗及下拉电压的要求,通过工艺参数优化制备了高阻硅基上的Ka波段级联式MEMS移相器,测试结果表明制备器件具有较低的驱动电压,8V时即产生明显的相移量,在36GHz处15V驱动电压时相移量为118°,25V时为286°.对微结构弹性膜的机械振动寿命测试表明,13级级联的MEMS移相器所有弹性膜同步振动的寿命为3×10⁶次.为器件的实用化提供了重要保障.     

多晶硅衬底上的RF MEMS开关

在微机械开关与硅IC工艺设计和兼容方面进行了改进,获得了一种可与IC工艺兼容的RF MEMS微机械开关.采用介质隔离工艺技术把这种RF MEMS微机械开关制作在绝缘的多晶硅衬底上,实现了与IC工艺兼容;采用在金属膜桥的端点附近刻蚀一些孔的优化方法,降低了RF MEMS微机械开关的下拉电压.用TE2819电容测试设备测试开关的电容,测得开关的开态电容、关态电容和致动电压分别为0.32pF、6pF和25V.用HP8753C网络分析仪对RF MEMS微机械开关进行了RF特性测试,得出RF MEMS微机械开关在频率1.5GHz下关态的隔离度为35dB,开态的插入损耗为2dB,用示波器测得该开关的开关速度为3μs.     

多晶硅衬底上的RF MEMS开关

在微机械开关与硅IC工艺设计和兼容方面进行了改进,获得了一种可与IC工艺兼容的RFMEMS微机械开关.采用介质隔离工艺技术把这种RFMEMS微机械开关制作在绝缘的多晶硅衬底上,实现了与IC工艺兼容;采用在金属膜桥的端点附近刻蚀一些孔的优化方法,降低了RFMEMS微机械开关的下拉电压.用TE2 819电容测试设备测试开关的电容,测得开关的开态电容、关态电容和致动电压分别为0 32 pF、6 pF和2 5V .用HP875 3C网络分析仪对RFMEMS微机械开关进行了RF特性测试,得出RFMEMS微机械开关在频率1 5GHz下关态的隔离度为35dB ,开态的插入损耗为2dB ,用示波器测得该开关的开关     

基于SOI硅片的硅微电极制作与评估

采用微机电系统(MEMS)工艺方法制作了基于SOI衬底的七通道硅微电极,用于视神经视觉修复. 通过噪声分析确定了硅微电极的金属暴露位点的几何尺寸. 优化设计了硅微电极的几何结构,以便于减小植入损伤. 阻抗测试结果表明,当测试电压为50mVpp时,1kHz频率下,微电极的单通道阻抗为2.3MΩ,适用于神经电信号记录. 在体实验结果表明,动物初级视皮层记录到的神经电信号幅度为8μV.     

基于SOI硅片的硅微电极制作与评估

采用微机电系统(MEMS)工艺方法制作了基于SOI衬底的七通道硅微电极,用于视神经视觉修复.通过噪声分析确定了硅微电极的金属暴露位点的几何尺寸.优化设计了硅微电极的几何结构,以便于减小植入损伤.阻抗测试结果表明,当测试电压为50mVpp时,1kHz频率下,微电极的单通道阻抗为2.3MQ,适用于神经电信号记录.在体实验结果表明,动物初级视皮层记录到的神经电信号幅度为8μV.     

压控式毫米波MEMS移相器的可动薄膜

介绍了采用金、铝硅合金等金属分别用作压控式RF MEMS开关阵列--移相器的可动薄膜,实验表明金的延展性比较好,弹性比铝硅合金稍差,启动电压较高.相比较含硅4%的轻质量铝硅合金具有较低的启动电压(5V),用该弹性膜制备的21桥压控式开关阵列--毫米波移相器的下拉电压为20V时,相移量可达到370°/3.5mm以上(35GHz),并能在不同的控制电压下根据要求改变相移量,其传输损耗为55～90°/dB,比金可动膜结构要高.     

低电压电容式RF MEMS开关设计研究

本文设计了一种低电压电容式RFMEMS开关,开关采用了两端固支梁结构,在梁与CPW共面波导地线的四个固定支撑位置使用了折叠结构,该结构可以减低下拉电压;通过在MEMS开关梁上开孔（直径9μm圆孔）来减小残余应力和杨氏模量和选择合适的开关梁厚度,显著降低了MEMS开关梁的弹性系数和下拉电压。以上措施显著降低了电容式RFMEMS开关的下拉电压,在ANSYS仿真下拉电压约为6V,驱动电压约为8.4V,该MEMS开关依旧保持了较好的S参数,开关插入损耗大于-0.35dB(8-40GHz),回波损耗小于-22dB(8-40GHz),隔离度（down态S21）大于25dB(8-40GHz)。     

压控式毫米波MEMS移相器的可动薄膜

介绍了采用金、铝硅合金等金属分别用作压控式RF MEMS开关阵列——移相器的可动薄膜,实验表明金的延展性比较好,弹性比铝硅合金稍差,启动电压较高.相比较含硅4%的轻质量铝硅合金具有较低的启动电压( 5 V ) ,用该弹性膜制备的2 1桥压控式开关阵列——毫米波移相器的下拉电压为2 0 V时,相移量可达到3 70°/3 .5 mm以上( 3 5 GHz) ,并能在不同的控制电压下根据要求改变相移量,其传输损耗为5 5～90°/ d B,比金可动膜结构要高     

一种硅微机械陀螺制造方法研究

给出了一种硅微机械陀螺制造方法,该方法可适用于各种不同的微机电系统(MEMS)器件,包括加速度计、剪切应力传感器及MEMS光开关等。利用该方法制备了硅微机械陀螺,并给出了该陀螺的性能测试结果。同时分析了利用该方法制备各种不同器件时,工艺流程对器件性能的影响,重点讨论了硅-玻璃阳极键合、减薄工艺及深刻蚀所形成的侧壁质量,包括侧壁垂直度、侧壁杂质等因素对器件性能的影响。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.