Phase,microstructural characterization and dielectric properties of Ca-substituted Sr<Subscript>5</Subscript>Nb<Subscript>4</Subscript>TiO<Subscript>17</Subscript> ceramics

The effect of Ca substitution for Sr on the phase, microstructure and microwave dielectric properties of the Sr_5−x Ca _x Nb₄TiO₁₇ composition series was investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), an LCR meter, and vector network analyzer. Below 1450 °C, Sr_5−x Ca _x Nb₄TiO₁₇ (x = 1, 2, 3, or 4) compositions formed single-phase Sr₄CaNb₄TiO₁₇, Sr₃Ca₂Nb₄TiO₁₇, Sr₂Ca₃Nb₄TiO₁₇, and SrCa₄Nb₄TiO₁₇ ceramics, respectively. At x = 0 and 5, Sr₅Nb₄TiO₁₇ and Ca₅Nb₄TiO₁₇ formed, but along with Sr₂Nb₂O₇ (at x = 0) and CaNbO₃ and CaNb₂O₆ (at x = 5) secondary phases. Above 1450 °C, all the compositions formed two-phase ceramics. At low frequencies, a phase transition was observed in the composition Sr₅Nb₄TiO₁₇. The substitution of Ca for Sr enabled processing of highly dense Sr₂Ca₃Nb₄TiO₁₇, with ε_r ~ 53.4, τ_f ~ −6.5 ppm/°C and Q _u  × f _o  ~ 1166 GHz. Further investigations are required to improve the quality factor of these ceramics for possible microwave applications.     

Microwave dielectric properties and its compatibility with silver electrode of LiNb<Subscript>0.6</Subscript>Ti<Subscript>0.5</Subscript>O<Subscript>3</Subscript> with B<Subscript>2</Subscript>O<Subscript>3</Subscript> and CuO additions

The influences of B₂O₃ and CuO (BCu, B₂O₃: CuO = 1:1) additions on the sintering behavior and microwave dielectric properties of LiNb_0.6Ti_0.5O₃ (LNT) ceramics were investigated. LNT ceramics were prepared with conventional solid-state method and sintered at temperatures about 1,100 °C. The sintering temperature of LNT ceramics with BCu addition could be effectively reduced to 900 °C due to the liquid phase effects resulting from the additives. The addition of BCu does not induce much degradation in the microwave dielectric properties. Typically, the excellent microwave dielectric properties of ε_r = 66, Q × f = 6,210 GHz, and τ _f  = 25 ppm/^oC were obtained for the 2 wt% BCu-doped sample sintered at 900 °C. Chemical compatibility of silver electrodes and low-fired samples has also been investigated.     

Low-temperature synthesis of Sr<Subscript>0.3</Subscript>Ba<Subscript>0.7</Subscript>Nb<Subscript>2</Subscript>O<Subscript>6</Subscript> ultrafine powder and its characteristics

Ultrafine strontium barium niobate (Sr_0.3Ba_0.7Nb₂O₆, SBN30) powders were prepared by urea method starting from a precursor solution constituting of Sr (NO₃)₂, Ba (NO₃)₂, NbF₅, urea and polyvinyl alcohol (PVA) as surfactant. Their structural behavior and morphology were examined by means of X-ray diffractometry (XRD) and Scanning electron microscopy (SEM). The results showed that the SBN30 powders crystallized to a pure tetragonal phase at annealing temperatures as low as 750 °C. The average particle size of SBN powders subjected to 750 °C was of the order of 150–300 nm. With increasing calcination temperature,however, the average particle size of the calcined powders increased. The SBN30 ceramic prepared from urea method can be sintered at temperature as low as 1,225 °C. The transition temperature from the ferroelectric phase to the paraelectric phase and the relative dielectric permittivity of the SBN30 powder were less than the corresponding values of the bulk ceramic. The permittivity and loss tangent (tan δ) at room temperature (1 kHz) was found to be 930 and below 0.025.     

Low-firing Li<Subscript>2</Subscript>ZnTi<Subscript>3</Subscript>O<Subscript>8</Subscript> microwave dielectric ceramics with BaCu(B<Subscript>2</Subscript>O<Subscript>5</Subscript>) additive

Phase purity, microstructure, sinterability and microwave dielectric properties of BaCu(B₂O₅)-added Li₂ZnTi₃O₈ ceramics and their cofireability with Ag electrode were investigated. A small amount of BaCu (B₂O₅) can effectively reduce the sintering temperature from 1075°C to 925°C, and it does not induce much degradation of the microwave dielectric properties. Microwave dielectric properties of ε _r = 23·1, Q × f = 22,732 GHz and τ _f = − 17·6 ppm/°C were obtained for Li₂ZnTi₃O₈ ceramic with 1·5 wt% BaCu(B₂O₅) sintered at 925°C for 4 h. The Li₂ZnTi₃O₈ +BCB ceramics can be compatible with Ag electrode, which makes it a promising microwave dielectric material for low-temperature co-fired ceramic technology application.     

Varistor properties and aging behavior of ZnO-V<Subscript>2</Subscript>O<Subscript>5</Subscript>-Mn<Subscript>3</Subscript>O<Subscript>4</Subscript> ceramics with sintering process

The microstructure, electrical properties, and DC-accelerated aging behavior of the ZnO-V₂O₅-Mn₃O₄ ceramics were investigated at different sintering temperatures of 850–925°C. The microstructure of the ZnO-V₂O₅-Mn₃O₄ ceramics consisted of ZnO grain as a primary phase, and Zn₃(VO₄)₂ which acts as a liquid-phase sintering aid, in addition to Mn-rich phase as secondary phases. The maximum value (3,172 V/cm) and minimum value (977 V/cm) of breakdown field were obtained at sintering temperature of 850 and 900°C, respectively. The nonlinear coefficient exhibited the highest value, reaching 30 at 925°C and the lowest value, reaching 4 at 850°C. The optimum sintering temperature was 900°C, which exhibited not only high nonlinearity with 24 in nonlinear coefficient, but also the high stability, with %ΔE_1mA = −0.9% and %∆α = −12.5% for DC-accelerated aging stress of 0.85 E_1mA/85°C/24 h.     

The Development of Microstructure and Ferroelectric Properties of Bi<Subscript>4</Subscript>Ti<Subscript>3.96</Subscript>Nb<Subscript>0.04</Subscript>O<Subscript>12</Subscript> Thin Films

Bi₄Ti_3.96Nb_0.04O₁₂ thin films were successfully deposited on Pt(111)/Ti/SiO₂/Si(100) substrates by a sol–gel method and rapid thermal annealing. The effects of Nb-substitution and annealing temperature (500–800°C) on the microstructure and ferroelectric properties of bismuth titanate thin films were investigated. X-ray diffraction analysis reveals that the intensities of (117) peaks are relatively broad and weak at annealing temperatures smaller than 700°C. With the increase of annealing temperature from 500°C to 800°C, the grain size of Bi₄Ti_3.96Nb_0.04O₁₂ thin films increases. The Bi₄Ti_3.96Nb_0.04O₁₂ thin films annealed at 700°C exhibit the highest remanent polarization (2P _r), 36 μC/cm² and lowest coercive field (2E _c), 110 kV/cm. The improved ferroelectric properties can be attributed to the substitution of Nb⁵⁺ to Ti⁴⁺ in Bi₄Ti₃O₁₂ assisting the elimination of defects such as oxygen vacancy and vacancy complexes.     

Synthesis,microstructure and microwave dielectric properties of Ca<Subscript>4-x</Subscript>Mg<Subscript>x</Subscript>La<Subscript>2</Subscript>Ti<Subscript>5</Subscript>O<Subscript>17</Subscript> ceramics

Ca_4-xMg_xLa₂Ti₅O₁₇ ceramics were prepared by a solid state ceramic route for x = 0, 0.5, 1, 2, 3 and 4. The structure and microstructure of the ceramics were investigated using X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy. X-ray diffraction results show that the Ca_4-x Mg _x La₂Ti₅O₁₇ adopts an orthorhombic crystal structure with no secondary phase observed for x from 0 to 0.5. Secondary phase, MgTiO₃ occurs with further increasing doping level (1 ≤ x ≤ 3). When x = 4, mixture phases La_0.66TiO_2.993, MgTiO₃ and a trace of unknown phase coexist. Ca₄La₂Ti₅O₁₇ ceramic exhibits a relative permittivity (ε_r) ~ 65, quality factor (Q × f) ~13,338 GHz (at ~4.75 GHz), and temperature coefficient of resonant frequency (τ _f ) ~ 165 ppm/°C. The sintering temperature was distinctly reduced from 1,580 °C for x = 0 to 1,350 °C for x = 4. With increasing Mg content, ε_r and τ_f obviously decrease, while Q × f value initially decreases and then increases. The ceramic for x = 2 shows ε_r ~ 50, Q × f ~ 9,451 and τ _f  ~ 62.5 ppm/°C. By the complete replacement of Ca with Mg, Mg₄La₂Ti₅O₁₇ ceramic sintered at 1,350 °C for 4 h combines a high dielectric permittivity (ε _r  = 31), high quality factor (Q × f ~ 15,021) and near-zero temperature coefficient of resonant frequency (τ _f  ~ 4.0 ppm/°C). The materials are suitable for microwave applications.     

Influence of annealing times on morphological characteristics of ceramic thin films by RF-magnetron sputtering using Zn-enriched (Ba<Subscript>0.3</Subscript>Sr<Subscript>0.7</Subscript>)(Zn<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript> ceramic target

The BaO–SrO–ZnO–Nb₂O₅ ceramic thin films have been deposited by radio frequency (RF) magnetron sputtering, using a Zn-enriched (Ba_0.3Sr_0.7) (Zn_1/3Nb_2/3)O₃ target, followed by annealing in O₂ atmosphere at 1,200 °C for 15, 30, 45, and 60 min. The results show that the surface morphologies of samples are crack-free and compact with well-crystallized structures. Grain sizes of thin films annealed at different times increase with the increasing annealing times, and when the annealing time is of 45 and 60 min, the grains change from spherical shape to columnar shape. RMS values of the thin films decrease with the increase in the annealing times from 15 to 30 min, while the RMS values increase with the increase in the annealing times from 30 to 60 min.     

Microwave dielectric properties and compatibility with silver of low-fired Ba2Ti3Nb4O18 ceramics with BaCu(B2O5) addition

The effects of BaCu(B₂O₅) (BCB) additions on the sintering temperature and microwave dielectric properties of Ba₂Ti₃Nb₄O₁₈ ceramic have been investigated. The addition of BCB can lower the sintering temperature of Ba₂Ti₃Nb₄O₁₈ ceramic from 1,250 to 900 °C and induce no obvious degradation of the microwave dielectric properties. Typically, the 5 wt% BCB added Ba₂Ti₃Nb₄O₁₈ ceramic sintered at 900 °C for 2 h exhibited good microwave dielectric properties of Q × f = 17,600 GHz, ε _r = 38.2 and τ _f  = 7 ppm/°C. The dielectric ceramic demonstrated stability against the reaction with the Ag electrode, which suggests that the ceramics could be applied in multilayer microwave devices requiring low sintering temperatures.     

Synthesis and sintering of nano-sized BaSnO<Subscript>3</Subscript> powders containing BaGeO<Subscript>3</Subscript>

The formation of solid solutions of the type [Ba(HOC₂H₄OH)₄][Sn_1−x Ge _x (OC₂H₄O)₃] as BaSn_1−x /Ge _x O₃ precursor and the phase evolution during its thermal decomposition are described in this paper. The 1,2-ethanediolato complexes can be decomposed to nano-sized BaSn_1−x /Ge _x O₃ preceramic powders. Samples with x = 0.05 consist of only a Ba(Sn,Ge)O₃ phase, whereas powders with x = 0.15 and 0.25 show diffraction patterns of both the Ba(Sn,Ge)O₃ and BaGeO₃ phase. The sintering behaviour was investigated on powders with a BaGeO₃ content of 5 and 15 mol%. These powders show a specific surface area of 15.4–15.9 m²/g and were obtained from calcination above 800 °C. The addition of BaGeO₃ reduced the sintering temperature of the ceramics drastically. BaSn_0.95Ge_0.05O₃ ceramics with a relative density of at least 90% can be obtained by sintering at 1150 °C for 1 h. The ceramic bodies reveal a fine microstructure with cubical-shaped grains between 0.25 and 0.6 μm. For dense ceramics, the sintering temperature could be reduced down to 1090 °C, when the soaking time was extended up to 10 h.     

Dielectric and piezoelectric properties of MnO<Subscript>2</Subscript>-doped K<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>Nb<Subscript>0.92</Subscript>Sb<Subscript>0.08</Subscript>O<Subscript>3</Subscript> lead-free ceramics

Lead-free MnO₂-doped K_0.5Na_0.5Nb_0.92Sb_0.08O₃ ceramics have been fabricated by a conventional ceramic technique and their dielectric and piezoelectric properties have been studied. Our results show that a small amount of MnO₂ (0.5–1.0 mol%) is enough to improve the densification of the ceramics and decrease the sintering temperature of the ceramics. The co-effects of MnO₂ doping and Sb-substitution lead to significant improvements in the ferroelectric and piezoelectric properties. The K_0.5Na_0.5Nb_0.92Sb_0.08O₃ ceramic with 0.5 mol%MnO₂ doping possesses optimum propeties: d ₃₃ = 187 pC/N, k _P = 47.2%, ε _r = 980, tanδ = 2.71% and T _c = 287 °C. Due to high tetragonal-orthorhombic phase transition temperature (T _O-T ~ 150 °C), the K_0.5Na_0.5Nb_0.92Sb_0.08O₃ ceramic with 0.5 mol%MnO₂ doping exhibits a good thermal stability of piezoelectric properties.     

Low-temperature sintering and microwave dielectric properties of MgTiO<Subscript>3</Subscript> ceramics

The effects of CuO–Bi₂O₃–V₂O₅ additions on the sintering temperature and the microwave dielectric properties of MgTiO₃ ceramics were investigated systematically. The CuO–Bi₂O₃–V₂O₅ (CuBiV) addition significantly lowered the densification temperature of MgTiO₃ ceramics from 1400 °C to about 900 °C, which is due to the formation of the liquid-phase of BiVO₄ and Cu₃(VO₄)₂ during sintering. The saturated dielectric constant (ε_r) increased, the maximum quality factor (Qf) values decreased and the temperature coefficient of resonant frequency (τ_f) shifted to a negative value with the increasing CuBiV content, which is mainly attributed to the increase of the second phase BiVO₄. MgTiO₃ ceramics with 6 wt.% CuBiV addition sintered at 900 °C for 2 h have the excellent microwave dielectric properties: ε _r= 18.1, Qf = 20300 GHz and τ_f = −57 ppm/ °C.     

Effect of B2O3 and CuO additions on the sintering temperature and microwave dielectric properties of 3Li2O–Nb2O5–3TiO2 ceramics

The effects of B₂O₃–CuO (BCu, the weight ratio of B₂O₃ to CuO is 1:1) addition on the sintering behavior, microstructure, and the microwave dielectric properties of 3Li₂O–Nb₂O₅–3TiO₂ (LNT) ceramics have been investigated. The low-amount addition of BCu can effectively lower the sintering temperature of LNT ceramics from 1125 to 900 °C and induce no obvious degradation of the microwave dielectric properties. Typically, the 2 wt% BCu-added ceramic sintered at 900 °C has better microwave dielectric properties of ε _r  = 50.1, Q × f = 8300 GHz, τ _f  = 35 ppm/°C. Silver powders were cofired with the dielectric under air atmosphere at 900 °C. The SEM and EDS analysis showed no reaction between the dielectric ceramic and silver powders. This result shows that the LNT dielectric materials are good candidates for LTCC applications with silver electrode.     

Influence of Sm substitution on the phase,microstructure and microwave dielectric properties of SrLa<Subscript>4</Subscript>Ti<Subscript>5</Subscript>O<Subscript>17</Subscript>

New dielectric ceramics in the SrLa_4−xSm_xTi₅O₁₇ (0 ≤ x ≤ 4) composition series were prepared through a solid state mixed oxide route to investigate the effect of Sm⁺³ substitution for La⁺³ on the phase, microstructure and microwave dielectric properties. At x = 0–3, all the compositions formed single phase ceramics within the detection limit of in-house X-ray diffraction when sintered in the temperature range 1500–1580 °C. At x = 4, a mixture of Sm₂Ti₂O₇ and SrTiO₃ formed. The maximum Sm⁺³-containing single phase ceramics, SrLaSm₃Ti₅O₁₇, exhibited relative permittivity (ε_r) = 42.6, temperature coefficient of resonant frequency (τ _f ) = −96 ppm/^oC and quality factor (Q _u f _o ) = 7332 GHz. An analysis of results presented here indicates that SrLa_4−xSm_xTi₅O₁₇ ceramics, exhibiting τ _f  ~ 0 and ε_r ~ 53 could be achieved at x ~ 1.4 but at the cost of decrease in Q _u f _o .     

Electrical and thermal properties of PTFE-Sr<Subscript>2</Subscript>ZnSi<Subscript>2</Subscript>O<Subscript>7</Subscript> composites

A new polymer-ceramic composite was prepared using PTFE and low loss Sr₂ZnSi₂O₇. The dielectric properties of the composite were studied in the microwave and radiofrequency ranges. The relative permittivity (ε_r) and dielectric loss (tan δ) increased with the filler loading from 0.10 to 0.50 volume fractions (v_f). The observed values of ε_r, thermal conductivity and coefficient of thermal expansion (CTE) were compared with the corresponding theoretical predictions. The ability of the composite towards moisture absorption resistance was studied as a function of filler loading. It was also found that the variation of ε_r was less than 2% in the temperature range 25–90 °C, at 1 MHz. For a filler content of 0.50 v_f, the PTFE/Sr₂ZnSi₂O₇ composite exhibited ε_r = 4.4_, tan δ = 0.003 (at 4–6 GHz), CTE = 38.3 ppm/°C, thermal conductivity = 2.1 W/mK and moisture absorption = 0.09 wt%.     

Characterization of Ba<Subscript>0.9</Subscript>Sr<Subscript>0.1</Subscript>TiO<Subscript>3</Subscript> prepared by low temperature chloride aqueous synthesis

Ba_0.9Sr_0.1TiO₃ powder was processed at 80°C by reacting Ti sol in aqueous solutions that contained BaCl₂, SrCl₂ and NaOH at atmospheric pressure. Well-crystallized, spherical, nanosizes powders were formed by this method. The powders were found to have a cubic structure, which was retained even after heating at 900°C. Sintering at 1400°C, led to the formation of a tetragonal structure with a secondary phase of Ba₆Ti₁₇O₄₀. Abrupt grain growth was observed at 1400°C. The electrical response of the sample sintered at 1400°C has three electrically different regions. Each region of the sample is represented by different RC element. Element 1 (R ₁ C ₁) is the most resistive and its capacitance ishigh (0.5 nFcm⁻¹) indicating a thin region, probably the grain boundary. Element 2 (R ₂ C ₂) shows a smaller resistance value compared to element 1. The capacitance value of element 2 is temperature-dependent and displays a Curie–Weiss behaviour, indicative of a ferroelectric material above T _c. The lower capacitance of C ₂ (15 pFcm⁻¹) indicates that it is a much thicker region than element 1 and can be assigned as a ferroelectric bulk region. Element 3 is probably an electrode effect.     

Formation mechanism of NaNbO<Subscript>3</Subscript> powders during hydrothermal synthesis

Hydrothermal synthesis of NaNbO₃ fine powders was investigated, and the formation mechanism was revealed. The lowest temperature to form NaNbO₃ powders was about 140 °C. An intermediate hexaniobate, Na₈Nb₆O₁₉·13H₂O, was formed first before the precursors were eventually converted to the perovskite phase. The step of dissolving Nb₂O₅ powders in OH⁻ solution and forming Nb₆O₁₉ ⁸⁻ ion was very important to the synthesis of NaNbO₃. For [OH⁻] = 3.0 M, Nb₂O₅ had the highest yield. There was another dissolvable sodium niobate in the hydrothermal system, which was stable when [OH⁻] = 1.2 M. The reaction mechanism was in situ transformation. The reaction speed first increased then decreased with [OH⁻]. High [OH⁻] is not always favorable in preparing perovskite NaNbO₃, and there is an optimum [OH⁻].     

Temperature-stable and low loss Fe-containing dielectrics in BaO-Ln<Subscript>2</Subscript>O<Subscript>3</Subscript>-Fe<Subscript>2</Subscript>O<Subscript>3</Subscript>-Ta<Subscript>2</Subscript>O<Subscript>5</Subscript> system

Polycrystalline samples of Ba₄Ln₂Fe₂Ta₈O₃₀ (Ln = La and Nd) were prepared by a high temperature solid-state reaction technique. The formation, structure, dielectric and ferroelectric properties of the compounds were studied. Both compounds are found to be paraelectrics with filled tetragonal tungsten bronze (TB) structure at room temperature. Dielectric measurements revealed that the present ceramics have exceptional temperature stability, a relatively small temperature coefficient of dielectric constant (τ _ε ) of −25 and −58 ppm/°C, with a high dielectric constant of 118 and 96 together with a low dielectric loss of 1.2 × 10⁻³ and 2.8 × 10⁻³ (at 1 MHz) for Ba₄La₂Fe₂Ta₈O₃₀ and Ba₄Nd₂Fe₂Ta₈O₃₀, respectively. The measured dielectric properties indicate that both materials are possible candidates for the fabrication of discrete multilayer capacitors in microelectronic technology.     

Effects of Nb<Subscript>2</Subscript>O<Subscript>5</Subscript> addition on the microstructure,electrical, and mechanical properties of PZT/ZnO nanowhisker piezoelectric composites

Nb₂O₅-modified PZT/ZnO nanowhisker (denoted as PZT/ZnO_w–Nb₂O₅) piezoelectric composites were prepared by a solid state sintering technique. Effects of Nb₂O₅ addition on the microstructure, electrical, and mechanical properties of the PZT/ZnO_w composites were investigated. With increasing Nb₂O₅ content, the grain size of the composites was reduced and the fracture mode changed from intergranular to intragranular gradually. Compared with the PZT/ZnO_w composites, the dielectric, piezoelectric, and ferroelectric properties of the PZT/ZnO_w–Nb₂O₅ composites were improved significantly, while mechanical properties were enhanced slightly. The optimum electrical and mechanical properties were achieved for the PZT/ZnO_w composites modified with 0.75 wt% Nb₂O₅ sintered at 1150 °C, with dielectric permittivity ε_r, piezoelectric coefficient d ₃₃, planar electromechanical coupling k _p, remnant polarization P _r, fracture toughness K _IC, and flexural strength σ_f being on the order of 4930, 600 pC/N, 0.63, 29.2 μC/cm², 1.56 MPa m^1/2 and 130 MPa, respectively. The Nb₂O₅-modified PZT/ZnO_w piezoelectric composites, with comparable electrical properties and improved mechanical properties than those of commercial PZT-5H ceramics, are promising candidates for further applications.     

Dielectric and impedance spectroscopy study of Ba<Subscript>0.8</Subscript>Bi<Subscript>2.133</Subscript>Nb<Subscript>1.6</Subscript>Ta<Subscript>0.4</Subscript>O<Subscript>9</Subscript> ferroelectric ceramics,prepared by chemical route

Nanocrystalline ceramic powder of Ba_0.8Bi_2.133Nb_1.6Ta_0.4O₉ was synthesized by chemical precursor decomposition method. The single-phase formation of the compound was confirmed using an X-ray diffraction technique and was found to be a tetragonal phase at room temperature. Average crystallite size and particle size were found to be 41 and 48.5 nm, which were analyzed through XRD and TEM respectively. The dielectric constant and tangent loss were measured in the frequency range 1 kHz–1 MHz after sintering the sample at 900 °C for 4 h. The polarization behavior was studied at an applied voltage of 6.2 kV/cm. Electrical properties of the material were investigated using complex impedance spectroscopy (CIS) technique, which revealed the presence of both grain and grain-boundary effects in the materials, which is also evidenced from the scanning electron microscope image. Grain conductivity indicated Arrhenius-type thermally activated process. AC conductivity spectrum obeys Jonscher’s universal power law. The electric modulus analysis suggests the possibility of hopping mechanism for electrical processes in the system with a non-debye type relaxation, which is supported by the impedance data.