Influence of A-site Gd doping on the microstructure and dielectric properties of Ba(Zr0.1Ti0.9)O3 ceramics

Pure and Gd-doped barium zirconate titanate (BaZr_0.1Ti_0.9O₃, BZT) ceramics were prepared by solid state reaction method. Phase analysis showed the formation of the pyrochlore phase (Gd₂Ti₂O₇) at about 5 mol% Gd doping in BZT. The microstructural investigation on the sintered ceramics showed that Gd doping significantly reduced the grain size of pure BZT ceramics, from about 100 μm to 2-5 μm. Change in the Gd concentration had minor influence on the grain size and on morphology. An increase in the Gd content decreased the Curie temperature (T_C) of the BZT ceramics. The maximum dielectric constant at T_C was observed for 2 mol% Gd and with further increase in Gd content the dielectric constant at T_C decreased. The dielectric constant was significantly improved compared to that of pure BZT ceramic. Tunable dielectric materials with good dielectric properties can be prepared by doping BZT with Gd.     

Effect of addition of Ba(W0.5Cu0.5)O3 in Pb(Mg1/3Nb2/3)O3-Pb(Zn1/3Nb2/3)O3-Pb(Zr0.52Ti0.48)O3 ceramics on the sintering temperature, electrical properties and phase transition

In this work, we report on the Pb(Mg_1/3Nb_2/3)O₃-Pb(Zn_1/3Nb_2/3)O₃-Pb(Zr_0.52Ti_0.48)O₃ (PMN-PZN-PZT) ceramics with Ba(W_0.5Cu_0.5)O₃ as the sintering aid that was manufactured in order to develop the low-temperature sintering materials for piezoelectric device applications. The phase transition, microstructure, dielectric, piezoelectric properties, and the temperature stability of the ceramics were investigated. The results showed that the addition of Ba(W_0.5Cu_0.5)O₃ significantly improved the sintering temperature of PMN-PZN-PZT ceramics and could lower the sintering temperature from 1005 to 920 °C. Besides, the obtained Ba(W_0.5Cu_0.5)O₃-doped ceramics sintered at 920 °C have optimized electrical properties, which are listed as follows: (K_p = 0.63, Q_m = 1415 and d₃₃ = 351 pC/N), and high depolarization temperature above 320 °C. These results indicated that this material was a promising candidate for high-power multilayer piezoelectric device applications.     

Low temperature sintering and microwave dielectric properties of (Mg0.7Zn0.3)0.95Co0.05TiO3 ceramics with BaCu(B2O5) additions

The effects of BaCu(B₂O₅) additives on the sintering temperature and microwave dielectric properties of (Mg_0.7Zn_0.3)_0.95Co_0.05TiO₃ ceramics were investigated. The (Mg_0.7Zn_0.3)_0.95Co_0.05TiO₃ ceramics were not able to be sintered below 1000 °C. However, when BaCu(B₂O₅) were added, they were sintered below 1000 °C and had the good microwave dielectric properties. It was suggested that a liquid phase with the composition of BaCu(B₂O₅) was formed during the sintering and assisted the densification of the (Mg_0.7Zn_0.3)_0.95Co_0.05TiO₃ ceramics at low temperature. BaCu(B₂O₅) powders were produced and used to reduce the sintering temperature of the (Mg_0.7Zn_0.3)_0.95Co_0.05TiO₃ ceramics. Good microwave dielectric properties of Q × f = 35,000 GHz, ?_r = 18.5.0 and τ_f = −51 ppm/°C were obtained for the (Mg_0.7Zn_0.3)_0.95Co_0.05TiO₃ ceramics containing 7 wt.% mol% BaCu(B₂O₅) sintered at 950 °C for 4 h.     

Microwave dielectric properties and its compatibility with silver electrode of Li2MgTi3O8 ceramics

The effects of BaCu(B₂O₅) (BCB) additions on the sintering temperature and microwave dielectric properties of Li₂MgTi₃O₈ ceramic have been investigated. The pure Li₂MgTi₃O₈ ceramic shows a relative high sintering temperature (∼1000 °C) and good microwave dielectric properties as Q × f of 40,000 GHz, ?_r of 27.2, τ_f of 2.6 ppm/°C. It was found that the addition of a small amount of BCB can effectively lower the sintering temperature of Li₂MgTi₃O₈ ceramics from 1025 to 900 °C and induce no obvious degradation of the microwave dielectric properties. Typically, the 0.5 wt% BCB added Li₂MgTi₃O₈ ceramic sintered at 900 °C for 2 h exhibited good microwave dielectric properties of Q × f = 36,200 GHz (f = 7.31 GHz), ?_r = 26 and τ_f = −2 ppm/°C. Compatibility with Ag electrode indicates this material can be applied to low temperature-cofired ceramics (LTCC) devices.     

Dielectric and microwave properties of ZrO2 doped CaO-SiO2-B2O3 ceramic matrix composites

The behavior of dielectric and microwave properties against sintering temperature has been carried out on CaO-SiO₂-B₂O₃ ceramic matrix composites with ZrO₂ addition. The results indicated that ZrO₂ addition was advantageous to improve the dielectric and microwave properties. X-ray diffraction (XRD) patterns show that the major crystalline β-CaSiO₃ and a little SiO₂ phase existed at the temperature ranging from 950 °C to 1050 °C. At 0.5 wt% ZrO₂, CaO-SiO₂-B₂O₃ ceramic matrix composites sintered at 1000 °C possess good dielectric properties: ?_r = 5.85, tan δ = 1.59 × 10⁻⁴ (1 MHz) and excellent microwave properties: ?_r = 5.52, Q · f = 28,487 GHz (11.11 GHz). The permittivity of Zr-doped CaO-SiO₂-B₂O₃ ceramic matrix composites exhibited very little temperature dependence, which was less than ±2% over the temperature range of −50 to 150 °C. Moreover, the ZrO₂-doped CaO-SiO₂-B₂O₃ ceramic matrix composites have low permittivity below 5.5 over a wide frequency range from 20 Hz to 1 MHz.     

Dielectric properties and crystal structure of La(Mg1/2Ti1/2)O3 ceramics with Mg substituted by Co

Solid solutions of (1 − x)La(Co_1/2Ti_1/2)O₃-xLa(Mg_1/2Ti_1/2)O₃ were used to prepare La(Mg_1−xCo_x)_1/2Ti_1/2O₃ using solid-state synthesis. X-ray diffraction patterns of the sintered samples revealed single phase formation. A maximum density of 6.01 g/cm³ was obtained for La(Mg_1−xCo_x)_1/2Ti_1/2O₃ (x = 1) ceramics sintered at 1375 °C for 4 h. The maximum values of the dielectric constant (?_r = 29.13) and the quality factor (Q × f = 80,000 GHz) were obtained for La(Mg_1−xCo_x)_1/2Ti_1/2O₃ with 1 wt% ZnO additive sintered at 1375 °C for 4 h. The temperature coefficient of resonant frequency τ_f was −59 ppm/°C for x = 0.3.     

Structure and dielectric characterization of xNd(Mg1/2Ti1/2)O3-(1 − x)Ca0.6La0.8/3TiO3 in the microwave frequency range

The crystal structures, phase compositions and the microwave dielectric properties of the xLa(Mg_1/2Ti_1/2)O₃-(1 − x)Ca_0.8Sr_0.2TiO₃ composites prepared by the conventional solid state route have been investigated. The formation of solid solution is confirmed by the XRD patterns. Doping with B₂O₃ (0.5 wt.%) can effectively promote the densification and the dielectric properties of xNd(Mg_1/2Ti_1/2)O₃-(1 − x)Ca_0.6La_0.8/3TiO₃ ceramics. It is found that xNd(Mg_1/2Ti_1/2)O₃-(1 − x)Ca_0.6La_0.8/3TiO₃ ceramics can be sintered at 1375 °C, due to the liquid phase effect of B₂O₃ addition observed by Scanning Electronic Microscopy. At 1375 °C, 0.4Nd(Mg_1/2Ti_1/2)O₃-0.6Ca_0.6La_0.8/3TiO₃ ceramics with 1 wt.% B₂O₃ addition possesses a dielectric constant (?_r) of 49, a Q × f value of 13,000 (at 8 GHz) and a temperature coefficients of resonant frequency (τ_f) of 1 ppm/°C. As the content of Nd(Mg_1/2Ti_1/2)O₃ increases, the highest Q × f value of 20,000 GHz for x = 0.9 is achieved at the sintering temperature 1400 °C.     

Enhancement microwave dielectric properties of La(Mg0.5Sn0.5)O3 ceramics by substituting Mg with Ni

The microwave dielectric properties of La(Mg_0.5−xNi_xSn_0.5)O₃ ceramics were examined with a view to their exploitation for mobile communication. The La(Mg_0.5−xNi_xSn_0.5)O₃ ceramics were prepared by the conventional solid-state method at various sintering temperatures. The X-ray diffraction patterns of the La(Mg_0.4Ni_0.1Sn_0.5)O₃ ceramics revealed no significant variation of phase with sintering temperatures. Apparent density of 6.71 g/cm³, dielectric constant (?_r) of 20.19, quality factor (Q × f) of 74,600 GHz, and temperature coefficient of resonant frequency (τ_f) of −85 ppm/°C were obtained for La(Mg_0.4Ni_0.1Sn_0.5)O₃ ceramics that were sintered at 1550 °C for 4 h.     

Crystal structure and dielectric properties of La(Mg1−xZnx)1/2Ti1/2O3 ceramics at microwave frequencies

Ceramics in the system La(Mg_1−xZn_x)_1/2Ti_1/2O₃ with B₂O₃ additions (1 wt.%) have been investigated by the conventional solid-state route. The XRD patterns of the sintered samples (0.3 ≤ x ≤ 1.0) revealed single phase formation with a structure. The unit cell volume slightly increased with increasing Zn content (x). La(Mg_1−xZn_x)_1/2Ti_1/2O₃ were found to form perovskite solid solutions in the whole compositional range. The maximum values of the dielectric constant and the quality factor multiples resonant frequency (Q × f) can be obtained when the La(Mg_0.7Zn_0.3)_1/2Ti_1/2O₃ with 0.5 wt.% B₂O₃ additive were sintered at 1475 °C for 4 h. The temperature coefficient of resonant frequency τ_f (−63 ppm/°C) was measured for x = 0.7.     

Microwave dielectric properties of temperature stable Li2ZnxCo1−xTi3O8 ceramics

The Li₂Zn_xCo_1−xTi₃O₈ (x = 0.2-0.8) solid solution system has been synthesized by the conventional solid-state ceramic route and the effect of Zn substitution for Co on microwave dielectric properties of Li₂CoTi₃O₈ ceramics has also been investigated. The microwave dielectric properties of these ceramics show a linear variation between the end members for all compositions. The optimized sintering temperatures of Li₂Zn_xCo_1−xTi₃O₈ ceramics increase with increasing content of Zn. The specimen with x = 0.4 sintered at 1050 °C/2 h exhibits an excellent combination of microwave dielectric properties with ?_r = 27.7, Q_u × f = 57,100 GHz and τ_f = −1.0 ppm/°C.     

Crystal structure and microwave dielectric properties of ZnTi(Nb1−xTax)2O8 ceramics

The crystal structure and microwave dielectric properties of ZnTi(Nb_1−xTa_x)₂O₈ (0 ≤ x ≤ 1) ceramics sintered at 1200 °C for 2 h were investigated. For x < 0.5, solid solution phases with the α-PbO₂ structure, typical of ZnTiNb₂O₈, were obtained, whereas for 0.5 ≤ x < 1, mixtures of two solid solutions each respectively based on the α-PbO₂ structure and a trirutile structure, were obtained. The relative amount of the trirutile-structured phases increased as the Ta content increased in a given region, and the end member ZnTiTa₂O₈ formed a single phase with the trirutile structure. The microwave dielectric properties were closely related to the crystal structures. A material with a near zero temperature coefficient of resonant frequency could be obtained for x = 0.8, and its dielectric constant and quality factor (Q × f) were 40.5 and 41,000 GHz, respectively.     

A new temperature stable microwave dielectric ceramics: ZnTiNb2O8 sintered at low temperatures

The phases, microstructure and microwave dielectric properties of ZnTiNb₂O₈-xTiO₂ composite ceramics with different weight percentages of BaCu(B₂O₅) additive prepared by solid-state reaction method have been investigated using the X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy-dispersive spectroscopy (EDS). The results showed that the microwave dielectric properties were strongly dependent on densification, grain sizes and crystalline phases. The sintering temperature of ZnTiNb₂O₈ ceramics was reduced from 1250 °C to 950 °C by doping BaCu(B₂O₅) additive and the temperature coefficient of resonant frequency (τ_f) was adjusted from negative value of −52 ppm/°C to 0 ppm/°C by incorporating TiO₂. Addition of 2 wt% BaCu(B₂O₅) in ZnTiNb₂O₈-xTiO₂ (x = 0.8) ceramics sintered at 950 °C showed excellent dielectric properties of ?_r = 38.89, Q × f = 14,500 GHz (f = 4.715 GHz) and τ_f = 0 ppm/°C, which represented very promising candidates as LTCC dielectrics for LTCC applications.     

Ferroelectric relaxor behavior and dielectric spectroscopic study of 0.99(Bi0.5Na0.5TiO3)-0.01(SrNb2O6) solid solution

0.99(Bi_0.5Na_0.5TiO₃)-0.01(SrNb₂O₆) was prepared by simple solid state reaction route. Material stabilized in rhombohedral perovskite phase with lattice constants a = 3.9060 Å, α = 89.86° and a_h = 5.4852 Å, c_h = 6.7335 Å for hexagonal unit cells. Density of material was found 5.52 g_m/cm³ (92.9% of theoretical one) in the sample sintered at 950 °C. The temperature dependent dielectric constant exhibits a broad peak at 538 K (?_m = 2270) at 1 kHz that shows frequency dependent shifts toward higher temperature - typical relaxor behavior. Modified Curie-Weiss law was used to fit the dielectric data that exhibits almost complete diffuse phase transition characteristics. The dielectric relaxation obeys the Vogel-Fulcher relationship with the freezing temperature 412.4 K. Significant dielectric dispersion is observed in low frequency regime in both components of dielectric response and a small dielectric relaxation peak is observed. Cole-Cole plots indicate polydispersive nature of the dielectric relaxation; the relaxation distribution increases with increase in temperature.     

Reaction-sintering method for ultra-low loss (Mg0.95Co0.05)TiO3 ceramics

Microwave dielectric properties and microstructures of (Mg_0.95Co_0.05)TiO₃ ceramics prepared by a new sintering method (reaction-sintering method) were investigated. A pure phase of (Mg_0.95Co_0.05)TiO₃ was obtained by the new method and excellent dielectric properties were observed due to uniformities of the microstructure and the phase. In contrast, the secondary phase (Mg_0.95Co_0.05)Ti₂O₅ was observed in samples prepared by conventional sintering method. In order to study the influence of secondary phase on the microwave dielectric properties quantitatively, the weight fraction of (Mg_0.95Co_0.05)Ti₂O₅ was calculated on the basis of Rietveld refinement. The pore-free?_r values of specimens prepared by two different methods indicated that porosity plays an important role in the ?_r values of (Mg_0.95Co_0.05)TiO₃ ceramics. Specimens sintered by reaction-sintering method at 1350 °C for 4 h possess excellent dielectric properties with an ?_r of 16.3, a Q × f value of 244,500 GHz, and a τ_f value of −53.5 ppm/°C.     

High-dielectric-constant and low-loss microwave dielectric in the (1 − x)La(Mg0.5Ti0.5)O3-x(Ca0.8Sr0.2)TiO3 solid solution system

The microwave dielectric properties and microstructures of (1 − x)La(Mg_0.5Ti_0.5)O₃-x(Ca_0.8Sr_0.2)TiO₃ ceramics, prepared by a mixed oxide route, have been investigated. The forming of solid solutions was confirmed by the XRD patterns and the measured lattice parameters for all compositions. A near zero τ_f was achieved for samples with x = 0.5, although the dielectric properties varied with sintering temperature. The Q × f value of 0.5La(Mg_0.5Ti_0.5)O₃-0.5(Ca_0.8Sr_0.2)TiO₃ increased up to 1475 °C, after which it decreased. The decrease in dielectric properties was coincident with the onset of rapid grain growth. The optimum combination of microwave dielectric properties was achieved at 1475 °C for samples where x = 0.5 with a dielectric constant ?_r of 47.12, a Q × f value of 35,000 GHz (measured at 6.2 GHz) and a τ_f value of −4.7 ppm/°C.     

Synthesis, structural and microwave dielectric properties of Al2W3−xMoxO12 (x = 0-3) ceramics

Low dielectric ceramics in the Al₂W_3−xMo_xO₁₂ (x = 0-3) system have been prepared through solid state ceramic route. The phase purity of the ceramic compositions has been studied using powder X-ray diffraction (XRD) studies. The microstructure of the sintered ceramics was evaluated by Scanning Electron Microscopy (SEM). The crystal structure of the ceramic compositions as a result of Mo substitution has been studied using Laser Raman spectroscopy. The microwave dielectric properties of the ceramics were studied by Hakki and Coleman post resonator and cavity perturbation techniques. Al₂Mo_xW_3−xO₁₂ (x = 0-3) ceramics exhibited low dielectric constant and relatively high unloaded quality factor. The temperature coefficient of resonant frequency of the compositions is found to be in the range −41 to −72 ppm/°C.     

Complex impedance analysis of (Y2O3 + CeO2)-YCr0.5Mn0.5O3 composite NTC ceramics

Ceramic compositions based on (aY₂O₃ + bCeO₂)-0.4YCr_0.5Mn_0.5O₃ (a + b = 0.6) were prepared by conventional solid state reaction at 1200 °C, and sintered under air atmosphere at 1600 °C. For 0 ≤ a < 0.6, XRD patterns have shown that the major phases presented in the calcined powders are Y₂O₃, CeO₂ and orthorhombic perovskite YCr_0.5Mn_0.5O₃ phase, respectively. SEM and EDAX observations confirm the YCr_0.5Mn_0.5O₃ phases mostly exist at the grain, whereas the Y₂O₃ and CeO₂ phases mainly exist at the grain boundaries. Complex impedance analysis shows that, for 0 < a ≤ 0.6, single semicircular arc whose shape does not show any change with temperature. Nevertheless, for a = 0, two overlapping semicircular arcs are observed at and above 300 °C. The grain boundary properties exhibit thermistor parameters with a negative temperature coefficient characteristic. The relaxation behavior and conduction for the grain boundary could be due to a space-charge relaxation mechanism and oxygen vacancies, respectively.     

Phase transition and piezoelectric properties of K0.48Na0.52NbO3-LiTa0.5Nb0.5O3-NaNbO3 lead-free ceramics

Plate-like NaNbO₃ (NN) particles were used as the raw material to fabricate (1 − x)[0.93 K_0.48Na_0.52Nb O₃-0.07Li(Ta_0.5Nb_0.5)O₃]-xNaNbO₃ lead-free piezoelectric ceramics using a conventional ceramic process. The effects of NN on the crystal structure and piezoelectric properties of the ceramics were investigated. The results of X-ray diffraction suggest that the perovskite phase coexists with the K₃Li₂Nb₅O₁₅ phase, and the tilting of the oxygen octahedron is probably responsible for the evolution of the tungsten-bronze-typed K₃Li₂Nb₅O₁₅ phase. The Curie temperature (T_C) is shifted to lower temperature with increasing NN content. (1 − x)[0.93 K_0.48Na_0.52NbO₃-0.07Li(Ta_0.5Nb_0.5)O₃]-xNaNbO₃ ceramics show obvious dielectric relaxor characteristics for x > 0.03, and the relaxor behavior of ceramics is strengthened by increasing NN content. Both the electromechanical coupling factor (k_p) and the piezoelectric constant (d₃₃) decrease with increasing amounts of NN. 0.01-0.03 mol of plate-like NaNbO₃ in 0.93 K_0.48Na_0.52NbO₃-0.07Li(Ta_0.5Nb_0.5)O₃ gives the optimum content for preparing textured ceramics by the RTGG method.     

Phase evolution, crystal structure and dielectric behavior of (1 − x)Nd(Zn0.5Ti0.5)O3 + xBi(Zn0.5Ti0.5)O3 compound ceramics

The phase evolution, crystal structure and dielectric properties of (1 − x)Nd(Zn_0.5Ti_0.5)O₃ + xBi(Zn_0.5Ti_0.5)O₃ compound ceramics (0 ≤ x ≤ 1.0, abbreviated as (1 − x)NZT-xBZT hereafter) were investigated. A pure perovskite phase was formed in the composition range of 0 ≤ x ≤ 0.05. The B-site Zn²⁺/Ti⁴⁺ 1:1 long range ordering (LRO) structure was detected by both XRD and Raman spectra in x ≤ 0.05 samples. However, this LRO structure became gradually degraded with an increase in x. The dielectric behaviors of the compound ceramic at various frequencies were investigated and correlated to its chemical composition and crystal structure. A gradually compensated τ_f value was obtained in (1 − x)NZT-xBZT microwave dielectrics at x = 0.03, which was mainly due to the dilution of dielectric constant in terms of Claussius-Mossotti differential equation.     

Effect of CuO on the sintering temperature and piezoelectric properties of MnO2-doped 0.75Pb(Zr0.47Ti0.53)O3-0.25Pb(Zn1/3Nb2/3)O3 ceramics

The sintering temperature of 0.75Pb(Zr_0.47Ti_0.53)O₃-0.25Pb(Zn_1/3Nb_2/3)O₃ ceramics containing 1.5 mol% MnO₂ was decreased from 930 to 850 °C with the addition of CuO. The CuO reacted with the PbO and formed a liquid phase during the sintering, which assisted the densification of the specimens. Most of the Cu²⁺ ions existed in the CuO second phase, thereby preventing any possible hardening effect from the Cu²⁺ ions. Variations of the k_p, Q_m, ?₃^T/?₀ and d₃₃ values with CuO were similar to that of the relative density. The specimen containing 0.5 mol% CuO sintered at 850 °C showed the good piezoelectric properties of k_p = 0.5, Q_m = 1000, ?₃^T/?₀ = 1750 and d₃₃ = 300 pC/N.