不同摩擦条件下MoS2-Ti3SiC2的摩擦学性能

采用热压烧结法制备MoS2添加量为4%(质量分数)的Ti3SiC2复合陶瓷,并研究其与GCr15钢在干摩擦和油润滑条件下的摩擦磨损特性及磨损机制.结果表明,Ti3SiC2复合陶瓷与GCr15钢在干摩擦时,随时间的变化,占主导地位的磨损机制发生了变化,从以磨粒磨损为主转变为以粘着磨损为主.摩擦系数为0.176～0.283,磨损率最大为2.657×10-6mm3·N-1·m-1.油润滑条件下摩擦系数为0.062～0.134,磨损率在10-7～10-6mm3·N-1·m-1之间.复合陶瓷的干摩擦系数略高于单相Ti3SiC2的摩擦系数0.17.     

MoS2/Ti3SiC2层状复合材料的制备

采用热压烧结方法制备MoS2/Ti3SiC2(MoS2质量分数为2%)的层状复合材料.研究了不同烧结温度对烧结试样性能的影响.研究表明,在1 400℃,30 MPa压力和保温2 h条件下,可以得到致密度达99%以上的MoS2/Ti3SiC2复合材料;在Ti3SiC2中添加MoS2后,烧结温度越高维氏硬度越大;在1 400℃,烧结试样维氏硬度达6 220 MPa,高于纯Ti3SiC2材料的4 000 MPa;MoS2有良好的导电性能,使得烧结试样的电导率比较高,在1 400℃,烧结试样电导率达9.68×106 S·m-1,是纯Ti3SiC2材料的2倍.     

分步法制备MoS2/Ti3SiC2层状复合材料

研究了采用分步法制备MoS2/Ti3SiC2层状复合材料的工艺,其制备过程分2步进行.首先制备Ti3SiC2高纯粉,再在1 400℃,30 MPa条件下热压烧结制备MoS2/Ti3SiC2层状复合材料.其MoS2含量分别为2%,4%,6%,8%(w/%).用XRD分析比较4种不同MoS2含量的烧结试样的相组成,并测试维氏硬度和电导率.实验结果表明,当MoS2含量为4%时,MoS2/Ti3SiC2烧结试样的硬度达到7.83 GPa,且电导率达到10.05×106 S·m-1.MoS2含量再增加时,烧结试样的硬度有所增大,但电导率有所下降.     

304不锈钢激光熔覆Co-Ti3SiC2自润滑复合涂层微观组织与摩擦学性能

采用激光熔覆同步送粉法在304不锈钢上制备出自润滑耐磨涂层,熔覆粉末配比为纯Co,Co-2％Ti3 SiC2(质量分数,下同)和Co-8％Ti3 SiC2.借助扫描电子显微镜(SEM),能谱分析仪(EDS)和X射线衍射仪(XRD)对熔覆涂层进行表征,系统地研究304不锈钢与涂层在室温和600℃下的摩擦学性能与磨损机理.结果表明:激光熔覆Co-Ti3 SiC2涂层的平均显微硬度高于基体(240.3HV0.5),N1,N2和N3涂层的硬度分别为285.7HV0.5,356.3HV0.5和463.8HV0.5,涂层主要由连续基体γ-Co固溶体,硬质相Fe2 C,Cr7 C3和TiC,润滑相Ti3 SiC2组成.在室温下,基体和N1,N2,N3涂层的摩擦因数分别为0.56,0.62,0.68和0.42,N1,N2,N3三种涂层的磨损率分别为9.15×10-5,7.81×10-5,4.66×10-5 mm3/(N·m),均明显低于基体(66.42×10-5 mm3/(N·m));在高温下,基体和N1,N2,N3涂层的摩擦因数为0.66,0.54,0.52和0.46,N1,N2,N3三种涂层磨损率分别为37.79×10-5,35.6×10-5,18.83×10-5 mm3/(N·m),均低于基体(41.3×10-5 mm3/(N·m)).在室温和600℃下,涂层具有高于304不锈钢基体的显微硬度,且Co-8％Ti3 SiC2涂层呈现出最好的自润滑耐磨性能.     

Y-TZP/MoS2自润滑材料的制备与研究

通过醇-水溶液加热方法,制备出Y-TZP包裹MoS2复合粉末,通过热压烧结,制备具有特殊显微结构、力学性能优良的Y-TZP/MoS2复合材料,考察了室温下复合材料与ZrO2配副时的摩擦学性能.结果表明当材料中含有44wt%MoS2时,其摩擦系数为0.25、磨损率为1 05×10-6mm3/m·N.     

添加剂对La2Ti2O7陶瓷性能的影响

研究了ZnO,Nb2O5和H3BO3的加入对La2Ti2O7陶瓷的烧结和介电性能的影响,并对影响机理作了初步探讨.结果表明选择合适种类和数量的添加剂能够使La2Ti2O7陶瓷在1220～1300℃之间烧结.添加1%(质量分数,下同)ZnO,0.5%Nb2O5和3%的H3BO3的La2Ti2O7陶瓷的介电常数分别为48和40,介电损耗在10-4数量级;在10kHz下,介电常数的温度系数分别为-24×10-6/℃和-48×10-6/℃,是一种性能良好的介质材料.     

WSe2纳米片的合成及其摩擦学性能研究

利用固相反应法在真空石英管中制备出了具有无机类纳米片层状结构的WSe2。对所合成的纳米材料分别用扫描电子显微镜、透射电子显微镜进行表征并对生长机理进行了分析;将其以不同质量分数分散到基础油HVI750中,利用摩擦磨损试验机及非接触式光学轮廓仪初步研究了其摩擦学性能,并通过测量摩擦副接触表面间油膜电阻监测其摩擦表面的成膜情况。结果显示生成物中含有两种尺度的六边形WSe2纳米形貌;含2%(质量比)WSe2润滑油添加剂的油样相对于基础油HVI750在载荷2 N,转速400 r/min,摩擦半径7 mm,实验时间30 min条件下的减摩(摩擦系数0.083)耐磨(比磨损率9.008×10-6mm3.m-1.N-1)性能较佳,平均油膜电阻为95.28 kΩ。因此得出WSe2做润滑油添加剂具有较好减摩抗磨性能,摩擦机理被提出。     

Ti3SiC2陶瓷材料的制备及抗烧蚀行为

以固溶少量Al的Ti3SiC2粉体为原料,采用热压烧结工艺制备出致密度大于99％的Ti3SiC2陶瓷块体材料,其硬度、抗弯强度和断裂韧度分别为775HV,520.46 MPa和7.62 MPa·m1/2.对Ti3SiC2块体在无冷却条件下进行抗氧乙炔焰烧蚀实验,结果表明:烧蚀10 s内Ti3SiC2陶瓷保持表面平整,烧蚀25 s内样品未出现宏观裂纹.SEM和XRD观察分析表明,Ti3SiC2陶瓷在高温乙炔焰和氧气的高热流冲击作用下,表面发生分解和氧化,Si和C被氧化为Si-O化物和C-O化物气体逸出,Ti元素被氧化成高温稳定的TiO2金红石相覆盖在表面;氧化层呈3层结构分布,最外层为结构疏松的TiO2,次表层则为TiO2和Al2TiO5组成的致密复合层,内氧化层为致密Al2O3富集层,Al2O3来源于固溶在原料Ti3SiC2中Al元素的氧化,并在高温下与TiO2反应生成了Al2 TiO5.具有高黏度和高熔点的Al2O3富集层可以有效阻碍O2和热流向基体的扩散,从而降低基体的氧化速率,提高Ti3SiC2材料的抗烧蚀性能.     

层厚比对磁控溅射Cr/CrN多层涂层组织和性能的影响

在超高真空磁控溅射仪上,制备了一系列具有相同调制周期不同层厚比的Cr/CrN涂层。用X射线衍射仪分析了涂层的相组成,通过扫描电镜观察了涂层形貌,采用显微硬度计测试了涂层硬度,在划痕仪上确定涂层和基体间的结合力,并利用磨损仪测量涂层的摩擦磨损性能。结果表明:调制周期为400nm时,当层厚比由2.0减小到0.2,Cr/CrN多层涂层始终由Cr和CrN两相组成,涂层择优取向为CrN(200),且涂层变得愈加致密,硬度从1550HV增大到2300HV,磨损率从2.4×10-8 mm3·N-1·m-1减小为0.6×10-8 mm3·N-1·m-1,涂层和基体结合性能优良。     

放电等离子烧结工艺合成Ti3SiC2材料

以铝为助剂结合放电等离子烧结工艺,在较低温度下快速制备出高纯致密Ti3SiC2块体材料.掺加适量铝能加快Ti3SiC2的反应合成,提高制备材料的纯度,并促进Ti3SiC2晶体的生长和材料的快速烧结致密.在升温速率为80℃/min,z轴压力为30MPa时,材料制备的最佳温度为1250～1300℃.所制备材料经XRD、SME和EDS分析表明不含TiC和SiC等杂质相,Ti3SiC2为5～15μm的板状结晶,断裂韧性为6.8±0.2MPa·m1/2,弯曲强度为420±10MPa.     

VLE data for CO2-CF2Cl2, N2-CO2, N2-CF2Cl2 and N2-CO2-CF2Cl

Knowledge about vapour-liquid (VLE) is required as a basis of reliable calculations for separation processes. Correlations available for the prediction of T, p, x, y data are less accurate for mixtures at high pressures and mixtures containing supercritical components. The results of VLE experiments are reported and compared with data calculated with equations of state.     

Preparation of ZrO2-CeO2 and HfO2-CeO2 nanopowders

We prepared weakly agglomerated powders of ZrO₂-CeO₂ and HfO₂-CeO₂ solid solutions 5–8 nm in particle size, consisting of monoclinic and tetragonal phases. After heat treatment at 1200°C, the crystallite size was 30 and 14 nm, respectively. We also examined the effect of precipitate freeze drying on the crystallization of hafnia-based solid solutions containing up to 20 mol % CeO₂.     

Thermal diffusion in binary mixtures H2-CCl2F2 and H2-CHClF2

Thermal diffusion coefficients were measured in two gaseous mixtures, in which one component was close to the critical temperature, in the pressure range (19.6–127.4)·10⁴ N/m² and at a freon concentration of 0.25–0.8.     

Comparison of the Electronic Structures of La2CuO4, Sr2CuO2Cl2, and Sr2CuO2F2

First-principles cluster calculations are reported of the local electronic structure of the three compounds: La₂CuO₄, Sr₂CuO₂Cl₂, and Sr₂CuO₂F₂. The copper ${\text{3d}}_{x^2 - y^2 } $ and the planar oxygen 2p _σ atomic orbitals exhibit a similar degree of covalency. The out-of-plane orbitals, however, are quite different with the ${\text{3}}d_{3z^2 - r^2 } $ atomic orbital lowered significantly in energy for chlorine and fluorine apical positions.     

Radial GRIN glasses in Li2O-Na2O-Al2O3-TiO2-SiO2 systems

A series of GRIN glass rods have been developed in Li2O-Na2O-Al2O3-TiO2-SiO2 systems. Negative radial refractive index profiles were generated by exchanging Na+ for Li+ ions in these glass rods. It has been observed that TiO2 plays a vital role in increase in the profile depth and maximum change in the refractive index because of its ambivalent nature. Change in the refractive index can be further increased by increasing the concentration of exchanging cation in the base glass.     

Elastic and Electronic Properties of Superconducting CaPd 2 As 2 and SrPd 2 As 2 vs. Non-superconducting BaPd 2 As 2

The first-principles calculations were performed to predict the elastic and electronic properties of the superconducting ThCr₂Si₂-type phases CaPd₂As₂ and SrPd₂As₂ in comparison with the non-superconducting CeMg₂Si₂-type phase BaPd₂As₂. Besides, the same properties were compared for CeMg₂Si₂- and ThCr₂Si₂-type polymorphs of BaPd₂As₂. We found that all these phases are mechanically stable and belong to soft materials with low hardness. The near-Fermi region is formed by the valence states of the blocks [Pd₂As₂] with decisive contributions of Pd 4d states. The values of N(E _F) increase in the sequence: CaPd₂As₂ < SrPd₂As₂ < BaPd₂As₂, i.e. in the reverse sequence relative to the transition temperatures T _C. Thus, the change in T _C cannot be explained by the electronic factor, i.e. by the simple correlation T _C～N(E _F). Most likely the decrease in T _C in the sequence CaPd₂As₂ → SrPd₂As₂ and the absence of a superconducting transition in BaPd₂As₂ are related to the structural factors and the peculiarities of the electron–phonon coupling mechanism.     

Si_2N_2O-Al_2O_3-La_2O_3和Si_2N_2O-Al_2O_3-CaO系统的亚固相关系

本文给出了 Si_2N_2O-Al_2O_3-La_2O_3和 Si_2N_2O-Al_2O_3-CaO 系统的亚固相图。实验结果表明:在 Si_2N_2O-Al_2O_3-CaO 系统中有一个未知结构的新化合物 CaO·Si_2N_2O,在3CaO·Si_2N_2O 和3CaO·Al_2O_3两化合物之间形成连续立方固溶体。而 Si_2N_2O-Al_2O_3-La_2O_3系统中则没有发现新化合物。在两个系统的富 Si_2N_2O区,过量的 Si_2N_2O 与 La_2O_3和 CaO 分别反应形成 Si_3N_4与 La_(10)[SiO_4]_(?)N_2(H-相)(和 CaSiO_3。所研究的这两个三元系统中,分别形成了如下几个四元相容性区。在 Si_2N_2O-Al_2O_3-La_2O_3系统内有:H-Si_3N_4-La_2O_3·Si_2N_2O-La_2O_3·Al_2O_3;H-Si_3N_4-La_2O_3·Al_2O_3-La_2O_3·11 Al_2O_3;H-Si_3N_4-La_2O_3·11 Al_2O_3-Al_2O_3;H-Si_3N_4-Al_2O_3-O′s.s;H-Si_3N_4-O′s.s-Si_2N_2O在 Si_2N_2O-Al_2O_3-CaO 系统内有:Si_3N_4-CaSiO_3-CaO·Si_2N_2O-3CaO·Al_2O_3;Si_3N_3-CaSiO_3-3CaO·Al_2O_3-2CaO·Al_2O_3·SiO_(?);Si_(?)N_(?)-CaSiO_3-2CaO·Al_2O_3·SiO_2-Al_2O_3;Si_3N_4-CaSiO_3-Al_2O_(?)-O′s.s;Si_3N_4-CaSiO_3-O′s.s-Si_(?)N_(?)O