辊压法制备柔性双稳态液晶显示器件

基于PET塑料薄膜取代硬质玻璃作为基板材料制备柔性液晶盒时,采用传统制备工艺会产生盒厚度不均以及盒中残留气泡等现象,导致柔性液晶器件性能变差。采用辊压工艺可以有效地解决上述问题,文章对其工艺流程进行了详细描述。实验发现,通过在辊压工艺中加热两片基板以降低溶液的黏度,能够有效地避免气泡残留,获得厚度均匀的柔性液晶盒。应用辊压工艺和聚合物分散胆甾相液晶,成功地制备了尺寸为7cm2的反射式柔性双稳态液晶盒。利用正交偏光显微镜观察了聚合物分散液晶的相形态,紫外分光光度计测试了其光电性能:最高反射率为22.8%,对比度为2.259,阈值电压为78V,饱和电压为99V。     

柔性塑料基板液晶镜片

普通液晶显示都是基于玻璃板的平板显示器．但用于眼镜不符合行业标准。本文的工作是在河北冀雅液晶显示有限公司完成的。使用柔性塑料基板来制作液晶镜片,替代原有的玻璃材料。利用液晶的性质来改变光强,利用塑料基板可弯曲的特性实现眼镜片的曲率。此产品的成功研发具有先进性。最后通过实验数据,对比分析了柔性塑料基板镜片和玻璃基板镜片的光透过率,对比度,响应时间等电光特性。     

单玻璃基板与各向异性聚合物膜的IPS-LCD的应用

介绍了一种使用单片玻璃基板和各向异性聚合物膜的轻型、共面转换液晶显示(IPS-LCD)技术。液晶分子由伸长的聚合物膜内的颗粒排列。各向异性聚合物膜的取向性能与聚酰亚胺(PI)摩擦层相当。良好的液晶取向性能使新器件的对比度(514:1)、驱动电压和响应时间都能够与双玻璃基板LCD相比拟。这种各向异性膜也能作为拓宽视角的相位补偿膜来使用。该技术特别引人注目之处在于制作单基板显示器,同时它也具有实现双层宾主显示和IPS-LCD柔性显示的潜在应用。     

胆甾型液晶显示技术和产业发展

以未来三年电子纸市场巨大的发展空间为切入点,分析了现阶段几种柔性显示技术的优势和劣势,认为胆甾型液晶显示在功耗、彩色化、对比度和抗震性等方面具有优势,但成本恐将成为其发展瓶颈。从全球来看,胆甾型液晶的研究和产业化主要集中在国外,国内高校和研究机构还停留在基础研究阶段。介绍了复旦大学在胆甾型液晶领域的研究成果,并结合我国产业环境及柔性显示产业发展特性给出三点发展建议。     

单层基板涂覆式彩色胆甾型液晶显示

描述了新型超薄彩色胆甾型液晶显示器,该显示器的各个功能层是依次涂覆于一个柔性基板上的。首次采用共享电极驱动器驱动无源矩阵彩色的乳液基的显示器,该显示器是由三层包埋于聚合物基体中的胆甾型微滴层积而成。     

柔性电子纸技术

在便携式和手持式设备应用日趋广泛的驱动下,许多厂家正在尝试开发类似纸张的显示技术。这种显示技术采用柔性基板,在普通环境光线下即可阅读。尽管要拥有真正的电子纸还有很长的路要走,但目前己经出现几种非常有前途的技术。 液晶显示器可选技术包括:胆甾型(cholesteric)液晶技术、超扭曲向列/薄膜     

液晶、显示材料

0207972柔性单体分子聚合物稳定胆甾相正模式液晶光阀[刊]/陈嵘//液晶与显示.—2001,16(4).—306～311(E)聚合物稳定胆甾相正模式液晶光阀通常使用刚性单体分子制作,然而使用柔性单体分子制作光阀,同样可以获得良好的电光特性,制作成本却可大大降低。实验证明胆甾相液晶与聚合物单体材料配比对液晶光     

不同单体配比对聚合物网络及聚合物稳定胆甾相液晶器件光电性能的影响

为了调节聚合物网络与液晶分子之间的相互作用,从而改善聚合物稳定胆甾相液晶(PSCLC)的光电性能,本文采用紫外光聚合诱导相分离法(PIPS)制备了聚合物稳定胆甾相液晶,通过控制2种单体RM257与BAB6的比例来改善器件性能。随着RM257含量的减少,聚合物网络由取向排列的纤维状结构向疏松不规整的交联状结构转变,形成的聚合物网络对液晶分子的锚定作用减弱,聚合物稳定胆甾相液晶的饱和电压降低,关闭时间增大。当RM257与BAB6质量比为1∶4时,聚合物稳定胆甾相液晶器件具有较好的对比度。     

胆甾相液晶多重乳液微结构激光特性的研究进展

染料掺杂的带边胆甾相液晶微激光器因阈值低、无需反射镜的特点,自提出以来便一直是研究热点。具有复杂微结构的胆甾相液晶液滴是一种新颖的三维全向微激光器,兼具有小型化、集成化与波长可调谐的特性,更是引起了液晶非显示领域研究者们的广泛兴趣。其复杂的球形核壳微结构,促使诸如分布反馈、回音壁和法布-珀罗等多种激光模式的产生。而玻璃毛细管微流控技术的出现,使大规模制备单分散、尺寸可控的胆甾相液晶液滴成为可能,同时为制备结构复杂的多重乳液提供了必要条件。本文简要介绍了制备液晶乳液所使用的玻璃毛细管微流控技术,并综述了近年来与单重乳液胆甾相液晶液滴及多重乳液胆甾相液晶核壳微结构中的激光行为相关的研究工作。     

P态刷新法在反射型多畴胆甾相液晶器件中的应用

主要针对制备的反射型多畴胆甾相液晶器件的特点以及胆甾相液晶的相态变化原理，根据P态刷新法的驱动原理，测出胆甾相液晶的各个相态的阈值电压，设计出相应的驱动波形，并应用于制备的样品中，实现了多畴结构的各个相态之间的转换，并在此基础上实现了全屏的相态变化过程．为静态字符显示奠定了基础。     

Amorphous-silicon TFT array for LCD addressing

A 64×64 element matrix array of amorphous-silicon thin-film transistors has been fabricated on a glass substrate. Using a drive scheme to simulate a 500-line display, an output voltage of 8.5 V RMS is obtained. This large output voltage is sufficient for an alphanumeric liquid-crystal display using the dyed cholesteric-nematic phase-change effect. The driving voltages for the array are compatible with LOCMOS (18 V) peripheral circuitry.     

IPS-LCD using a glass substrate and an anisotropic polymer film

A lightweight in-plane-switching liquid crystal display (IPS-LCD) using a single glass substrate and an anisotropic polymeric film is demonstrated. The liquid crystal molecules are aligned by the elongated polymer grain of the film. The alignment capability of the anisotropic film is comparable to a buffed polyimide layer. Compared to the LCD using two glass substrates, our new device exhibits a comparable contrast ratio (/spl sim/514:1), driving voltage, and response time because of good LC alignment. Such an anisotropic film can also function as a phase compensation film for widening the viewing angle. This technology is particularly attractive for making single-substrate displays and also has potential for a double-layered guest-host display and a flexible display using IPS LCDs.     

Ultraviolet ZnO Photodetectors with High Gain

Fabrication and characterization of metal-semiconductor-metal ultraviolet(MSM UV) photodetector based on ZnO ultra thin(nano scale) films with Pd Schottky contact are reported.The ZnO thin film was grown on glass substrate by thermal oxidation of pre-deposited zinc films using vacuum deposition technique.With applied voltage in the range from -3V to 3V,the contrast ratio,responsivity,and detectivity for an incident radiation of 0.1 mW at 365 nm wavelength were estimated.The proposed device exhibited a high ...     

Threshold-voltage tuning characteristics of all-organic electrochemical vertical rectifiers on flexible substrates

A printed all-organic electrochemical vertical tunable rectifier is demonstrated using a conducting polymer as the active material on a flexible plastic substrate. Solution processable poly(3,4-ethylenedioxythiophene) combined with poly(styrene sulfonic acid) (PEDOT:PSS) was coated on polyester film; the rectifier channel was patterned on the PEDOT:PSS film through directly writing technique without the need for masks, patterns, or dies. A vertically layered electrochemical cell was structured via printing and laminating processes to reduce driving voltages. The resulting rectifier is a three-terminal device; the functionality of threshold voltage tuning is realized by adjusting the potential difference within the electrochemical cell. The driving voltages are reduced significantly compared to rectifiers with lateral device architecture. In a single device, the threshold voltage is tunable between 0.16 and 1.0 V while a bias voltage is swept from 0.9 to 1.7 V.     

PDLC膜黑白显示原理及其光电性能研究

文章阐述了基于正交偏正片实现PDLC膜的黑白显示机理,并基于正交偏振片研究了PDLC膜的电光特性,实现PDLC膜黑白显示。研究发现,PDLC膜的阈值电压Vth和对比度CR(0°)随膜厚、单体含量增加呈减小的趋势,与无正交偏振片下的PDLC膜相关特性相反;而饱和驱动电压Vdr随膜厚、单体含量增加而增大,且可视视角宽度随膜厚增加而减小,与无正交偏振片下PDLC膜相关特性变化趋势基本一致;透射光强与视角之间存在M型特性。     

Leakage and charge injection optimization in a-Si AMOLED displays

In this paper, we examine the effect of switch thin-film transistor (TFT) leakage and charge injection on the operation and driving of amorphous silicon (a-Si) active matrix organic light-emitting diode (AMOLED) displays. Charge injection causes an undesirable and immediate drop in the data voltage stored on the storage capacitor CS when the switch TFT is turned off, and the leakage of the switch TFT causes the charge on CS to gradually leak out over the frame time. While making the row line negative helps reduce the leakage, it increases the voltage swing on the row line and causes more charge injection. We have demonstrated that for a given V/sub DD/, there is an optimal negative gate drive voltage on the switch TFT that minimizes the overall drop in data voltage on CS over the frame time. In addition, we have also shown that even though this optimal driving point changes with aging of the display since both leakage and V/sub T/ increase over time, it is possible to keep the voltage drop on C/sub S/ constant irrespective of aging. The analysis provides the designer with a means to improve the long term grey-scale performance of the AMOLED display.     

High-performance poly-Si TFTs on plastic substrates using a nano-structured separation layer approach

We demonstrate a manufacturable, large-area separation approach for producing high-performance polycrystalline silicon thin-film transistors on flexible plastic substrates. The approach allows the use of high growth-temperature gate oxides and removes the need for hydrogenation. The process flow starts with the deposition of a nano-structured high surface-to-volume ratio film on a reuseable "mother" substrate. This film functions as a sacrificial release layer and is Si-based for process compatibility. After high-temperature TFT fabrication (up to 1100/spl deg/C) is carried to completion on the sacrificial film coated mother substrate, a thick plastic top layer film is applied, and the sacrificial layer is removed by chemical attack. By using this separation process, the temperature, smoothness, and mechanical limitations posed by plastic substrates are completely circumvented. Both excellent n-channel and p-channel TFTs on plastic have been produced. We report here on p-channel TFTs on separated plastic with a linear field effect (hole) mobility of 174 cm/sup 2//V/spl middot/s, on/off current ratio of >10/sup 8/ at V/sub ds/=-0.1 V, off current of <10/sup -11/ A//spl mu/m-channel-width at V/sub ds/=-0.1 V, sub-V/sub t/ swing of /spl sim/200 mV/dec, and threshold voltage of -1.1 V.     

New Address-While-Display Driving Method for High Contrast Ratio and Wide Operation Margin PDP Using Short Ramp Reset (SRR) and Short Pulse Erase (SPE) Schemes

We propose a new address-while-display (AWD) driving method for a plasma display panel to obtain a high contrast ratio and a wide operation margin, which is composed of a short ramp reset (SRR) period, a short erase period, a sustain period, and an address period as the basic units. The SRR pulse and the short pulse erase period make it possible to obtain a wide operating voltage margin and minimize the background luminance by redistributing the wall charges in a short initialization time between the address and the scan electrode. As a result, a high darkroom contrast ratio of 10 000 : 1 could be achieved with a wide operating voltage margin of 40 V for a stable address.