共查询到19条相似文献,搜索用时 187 毫秒
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多晶硅材料制备薄膜逻辑电路和开关阵列器件具有较高的电子迁移率的优点。然而,目前大多数研究工作注重于制备温度在1000℃左右的多晶硅材料,这就难免薄膜的再结晶。最近,英国GEC研究有限公司的Meakin等人报导了采用低得多的温度制备多晶硅材料的方法,并等一次详细探讨了淀积条件,薄的形貌和薄膜晶体管(TFT)特性之间的相互关系。 相似文献
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首先阐述了MIC薄膜多晶硅材料动态镍吸杂技术的基本机理和主要工艺过程,然后以多晶硅薄膜晶体管(poly-Si TFT)为例研究了动态吸杂技术的应用.在研究金属诱导晶化多晶硅材料(MIC poly-Si)和以之为有源层的poly-Si TFT的过程中,发现在MIC多晶硅薄膜中含有部分残余的镍成份.而大部分存在于对撞晶界的残余镍成份会造成大量的缺陷,这将导致TFT器件性能乃至整个系统的稳定性和可靠性的降低.为了改善MIC薄膜及器件质量,我们采用磷硅玻璃(PSG)动态镍吸杂技术,有效地吸除镍,降低多晶硅中镍的残留量,改善对撞晶界的缺陷密度,降低用之制备TFT的漏电流.该技术工艺过程简单,处理成本低,适合于大批量的工业化生产,有望成为制备高稳定性微电子器件与电路系统的必需工艺技术. 相似文献
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首先阐述了MIC薄膜多晶硅材料动态镍吸杂技术的基本机理和主要工艺过程,然后以多晶硅薄膜晶体管(poly-Si TFT)为例研究了动态吸杂技术的应用.在研究金属诱导晶化多晶硅材料(MIC poly-Si)和以之为有源层的poly-Si TFT的过程中,发现在MIC多晶硅薄膜中含有部分残余的镍成份.而大部分存在于对撞晶界的残余镍成份会造成大量的缺陷,这将导致TFT器件性能乃至整个系统的稳定性和可靠性的降低.为了改善MIC薄膜及器件质量,我们采用磷硅玻璃(PSG)动态镍吸杂技术,有效地吸除镍,降低多晶硅中镍的残留量,改善对撞晶界的缺陷密度,降低用之制备TFT的漏电流.该技术工艺过程简单,处理成本低,适合于大批量的工业化生产,有望成为制备高稳定性微电子器件与电路系统的必需工艺技术. 相似文献
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The poly-Si thin film was obtained by electric field-enhanced metal-induced lateral crystallization technique at low temperature. Raman spectra, X-ray diffraction (XRD) and scan electron microscope (SEM) were used to analyze the crystallization state, crystal structure and surface morphology of the poly-Si thin film. Results show that the poly-Si has good crystallinity, and the electric field has the effect of enhancing the crystallization when DC electric voltage is added to the film during annealing. Secondary ion mass spectroscopy (SIMS) shows that the metal Ni improves the crystallization by diffusing into the a-Si thin film, so the crystallization of the lateral diffused region of Ni is the best. The p-channel poly-Si thin film transistors (TFTs) were fabricated by this large-size grain technique. The IDS−VDS and the transfer characteristics of the TFTs were measured, from which, the hole mobility of TFTs was 65 cm2/V s, the on and off current ratio was 5×106. It is a promising method to fabricate high-performance poly-Si TFTs at low temperature for applications in AMLCD and AMOLED. 相似文献
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A high-performance polycrystalline silicon thin film transistorwith a silicon nitride gate insulator
We have fabricated a high performance polycrystalline silicon (poly-Si) thin film transistor (TFT) with a silicon-nitride (SiNx ) gate insulator using three stacked layers: very thin laser of hydrogenated amorphous silicon (a-Si:H), SiNx and laser annealed poly-Si. After patterning thin a-Si:H/SiNx layers, gate, and source/drain regions were ion-doped and then Ni layer was deposited. This structure was annealed at 250°C to form a NiSi silicide phase. The low resistive Ni silicides were introduced as gate/source/drain electrodes in order to reduce the process steps. The poly-Si with a grain size of 250 nm and low resistance n+ poly-Si for ohmic contact were introduced to achieve a high performance TFT. The fabricated poly-Si TFT exhibited a field effect mobility of 262 cm2/Vs and a threshold voltage of 1 V 相似文献
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ZENG Xiang-bin XU Zhong-yang DAI Yong-bin WANG Chang-an ZHOU Xue-mei ZHAO Bo-feng 《半导体光子学与技术》2000,6(2):96-99,104
A novel approach of two-step laser crystallization for the growth of poly-Si thin film on glass substrate is investigated. Using this approach, we fabricated poly-Si thin film transistors with electron mobility of 103 cm2/V·s and on/off current ratio of 1×10~7.They are better than those of the poly-Si TFTs fabricated by conventional single-step excimer laser crystallization. We also analyzed the structure of the laser crystallized poly-Si thin film by spectroscopic ellipsometry, and proposed the models to simulate the poly-Si thin film and calculated the ellipsometric spectra. The calculated results are in good agreement with the measured results. 相似文献
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RAO Rui XU Chong-yang SUN Guo-cai ZHOU Xue-mei ZENG Xiang-bin ZHAO Bo-fang 《半导体光子学与技术》2001,7(1):17-19,23
Using a new low-temperature process (<600 ℃), the poly-Si TFT was fabricated by metal-induced lateral crystallization (MILC). An ultrathin aluminum layer was deposited on a-Si film and selectively formed by photolithography. The films were then annealed at 560 ℃ to obtain laterally crystallized poly-Si film, which is used as the channel area of a TFT. The poly-Si TFT showed an on/off current ratio of higher than 1×10 6 at a drain voltage of 5 V. The electrical properties are much better than TFT fabricated by conventional crystallization at 600 ℃. 相似文献
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Chun-Yen Chang Hsiao-Yi Lin Tan Fu Lei Juing-Yi Cheng Liang-Po Chen Bau-Tong Dai 《Electron Device Letters, IEEE》1996,17(3):100-102
A top-gate p-channel polycrystalline thin film transistor (TFT) has been fabricated using the polycrystalline silicon (poly-Si) film as-deposited by ultrahigh vacuum chemical vapor deposition (UHV/CVD) and polished by chemical mechanical polishing (CMP). In this process, long-term recrystallization in channel films is not needed. A maximum field effect mobility of 58 cm2/V-s, ON/OFF current ratio of 1.1 107, and threshold voltage of -0.54 V were obtained. The characteristics are not poor. In this work, therefore, we have demonstrated a new method to fabricate poly-Si TFT's 相似文献
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Cheol-Min Park Byung-Hyuk Min Jae-Hong Jun Juhn-Suk Yoo Min-Koo Han 《Electron Device Letters, IEEE》1997,18(1):16-18
We have fabricated a self-aligned offset-gated poly-Si thin film transistor (TFT) by employing a novel photoresist reflow process. The gate structure of the new device is consisted of two unique patterns: A main-gate and a sub-gate. The new fabrication method extends the gate-oxide over the offset region. With the assistance of the sub-gate and reflowed photoresist a self-aligned offset region is successfully obtained due to the offset oxide acting as an implantation mask. The poly-Si TFT with symmetrical offsets is easily fabricated and the new method does not require any additional offset mask step. Compared with the misaligned offset gated poly-Si TFTs, excellent symmetric electrical characteristics are obtained 相似文献
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Shengdong Zhang Chan A.C.K. Ruqi Han Ru Huang Xiaoyan Liu Yangyuan Wang Ko P.K. Mansun Chan 《Electron Devices, IEEE Transactions on》2003,50(9):1952-1960
In this paper, the effect of the nonself-aligned process on the performance variation of a bottom-gate metal oxide semiconductor (MOS) transistor is discussed using a device simulator. The simulation results predict that the nonself-aligned bottom-gate MOS transistor cannot be scaled into the deep submicron regions. A simple fully self-aligned bottom-gate (FSABG) metal oxide semiconductor field effect transistor (MOSFET) technology is then proposed and developed. A new technique for forming thermal oxide on poly-Si serving as the bottom-gate dielectric is also investigated. It is found that the quality of the oxide on the poly-Si recrystallized by the metal induced uni-lateral crystallization (MIUC) is much higher than that by the solid phase crystallization (SPC). Deep submicron fully self-aligned bottom-gate pMOS transistors are fabricated successfully using the proposed technology. The experimentally measured results indicate the device performances depend strongly on the channel-width, and get comparable to that of a single crystal MOSFET if the channel width is less than 0.5/spl mu/m. The effects of the channel width on the device performances are discussed. In addition, the experimental results also confirm that the proposed technology has a good control of the channel film thickness. 相似文献
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Chen-Ming Hu YewChung Sermon Wu Chi-Ching Lin 《Electron Device Letters, IEEE》2007,28(11):1000-1003
Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (alpha-Si) has been employed to fabricate poly-crystalline silicon (poly-Si) thin-film transistors. However, current crystallization technology often leads to Ni and NiSi2 precipitates being trapped, thus degrading the performance of the device. We proposed using alpha-Si-coated wafers as Ni-gettering substrates. After bonding the gettering substrate with the NILC poly-Si film, both the Ni-metal impurity within the NILC poly-Si film and the leakage current were greatly reduced, thus increasing the ON/OFF current ratio. 相似文献
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Leakage current of poly-Si TFT fabricated by a metal induced lateral crystallization(MILC) process was investigated in terms of metal contamination and crystallization mechanisms. MILC poly-Si TFTs showed a higher leakage current than those by the solid phase crystallization method at high drain voltages. It turned out that the Ni rich phases in the depleted junction region played the role of trapping and recombination centers to generate the leakage currents and that the leakage current was generated by thermionic field emission. The leakage current could be drastically reduced to 5 pA/μm at VGS=0 V and VDS=15 V after the exclusion of the Ni-rich phase from the junction region by a Ni offset MILC process. 相似文献