Enhanced Superconductivity in Double-Doping Cu<Subscript>0.15</Subscript>TaSe<Subscript>2−<Emphasis Type="Italic">x</Emphasis></Subscript><Emphasis Type="Italic">S</Emphasis><Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>

Superconducting Cu _x TaSe₂(x=0.05, 0.15) and Cu_0.15TaSe_2?x S _x (x=0, 0.5, 1, 1.5) single crystals have been systematically fabricated by a chemical vapor transport method. It is found that the double doping in TaSe₂, i.e., the simultaneous intercalation of Cu and substitution of Se by S, can substantially enhance the superconducting transition temperature. Transport property measurements give evidence of the coexistence and competition of charge density wave state and superconductivity in Cu _x TaSe₂ which provide meaningful information to understand the complex electronic states in this system. The parallel shift and the fan-shape broadening behaviors are observed in the superconducting transition curves under magnetic fields of Cu_0.15TaSeS and TaSeS, respectively, indicating an increase of coherence length and suppression of superconducting fluctuation induced by copper intercalation.     

Structural Parameters and Spin Filtering Properties of Ga<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>(<Emphasis Type="Bold">M</Emphasis>)<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>P compound

In this work, we have explored the structural and magnetic properties of GaP-based diluted magnetic semiconductors (DMSs). Based on first-principle density functional theory (DFT) calculations and using a full potential linearized augmented plane wave (FP-LAPW) method in generalized gradient approximation (GGA), some significant structural and magnetic properties of Ga _1?x (M) _x P compound as DMS are investigated. In this compound, M is a transition element such as vanadium (V), manganese (Mn), cobalt (Co), and copper (Cu) with a concentration of X. We have calculated the structural parameters such as the equilibrium lattice constant and bulk modulus of the compound. Furthermore, the spin polarization and magnetic moments are studied. We have found that by increasing the atomic number of the transition element, the lattice constant reduces, except for that of Cu, and compressibility improved in comparison with GaP. Moreover, with X=25 %, the Ga_0.75(M)_0.25P compound becomes more stable by increasing the atomic number of the transition element M. The study of the electronic properties of the compound indicates that the main contribution in total density of states near Fermi level is related to the 3d orbitals of the transition elements and the highest magnetic moment is for Mn-doped GaP.     

Thermal conductivity of Er<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Sn<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Se (<Emphasis Type="Italic">x</Emphasis> ≤ 0.025) solid solutions

The thermal conductivity of Er _x Sn_{1 ? x} Se solid solutions has been measured at temperatures from 80 to 360 K. The results have been used to evaluate the electronic and lattice components of thermal conductivity for elastic carrier scattering, parabolic bands, and arbitrary degeneracy. With increasing erbium content and temperature, both the electronic and lattice components decrease considerably. Long-term annealing increases both components. It follows from the present experimental data that heat conduction in Er _x Sn_{1 ? x} Se is mainly due to phonons and that the observed rise in thermal resistance with Er content is due to phonon-phonon and paramagnetic-ion scattering.     

Homogeneity of high-resistivity <Emphasis Type="Italic">p</Emphasis>-Si<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>〈Au〉 crystals

p-Si_{1 ? x} Ge _x crystals have been diffusion-doped with gold. Gold diffusion in the p-Si_{1 ? x} Ge _x 〈Au〉 samples and their electrical properties have been studied. The results demonstrate that the highest gold concentration in the crystals can be achieved in the temperature range 1000–1050°C. An expression has been derived which indicates that, all other factors being the same, compensation with Au, an amphoteric impurity, insures better homogeneity compared to codoping with acceptor and donor impurities. The hole concentration homogeneity in gold-compensated samples is at the same level as or even better than that in the uncompensated material.     

Synthesis of ultrafine fluorite Sr<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Nd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>F<Subscript>2 + <Emphasis Type="Italic">x</Emphasis></Subscript> powders

We have identified conditions that ensure the preparation of ultrafine Sr_{1 − x} Nd _x F_{2 + x} powders uniform in phase composition. The powders were characterized by X-ray diffraction and scanning electron microscopy. The powder particles have the form of faceted nano- and microcubes and range in size from 30–100 nm to 0.3–2.5 μm, depending on precipitation conditions.     

Ordering and twinning in the nonstoichiometric phase La<Subscript>1 − <Emphasis Type="Italic">y</Emphasis></Subscript>Ca<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript>F<Subscript>3 − <Emphasis Type="Italic">y</Emphasis></Subscript>

The nonstoichiometric phase La_{1 ? y} Ca _y F_{3 ? y} with a LaF₃-related structure has been studied by electron diffraction. In addition to diffraction features corresponding to twinning on the (001) and {1\(\bar 2\)0} planes, typical of LaF₃, evidence has been found for twinning on the {101} and {102} planes. This behavior is accounted for by the formation of ordering domains with an ordering direction inclined to mirror planes. It seems likely that ordering domains determine many of the properties of nonstoichiometric phases.     

Raman spectroscopy determination of carrier concentration in <Emphasis Type="Italic">n</Emphasis>-In<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ga<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>As epitaxial films

We have studied in detail the coupled phonon-plasmon mode Raman spectra of n-In _x Ga_{1 − x} As with n in the range 10¹⁷ to 10¹⁹ cm⁻³. The results indicate that the behavior of the high-frequency mode L ₊ can be described in terms of coupled modes in the Drude approximation. The proposed theory and experimental data are used to estimate the carrier concentration in the solid solution and its composition.     

Phase transformation of <Emphasis Type="Italic">p</Emphasis>-Cd<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Mn<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>GeAs<Subscript>2</Subscript> single crystals at 5.5 GPa

The electrical resistivity and Hall coefficient of oriented single-crystal p-Cd_{1 − x} Mn _x GeAs₂ samples have been measured at high pressures. The results indicate that the crystals undergo a reversible structural transformation at 5.5 GPa, which is independent on the sample orientation.     

Mechanism of nanostructuring in fluorite-like Ca<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>La<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>F<Subscript>2 + <Emphasis Type="Italic">x</Emphasis></Subscript>

Nanostructuring in fluorite-like Ca_{1 ? x} La _x F_{2 + x} is shown to be associated with the precipitation of an CuAu-ordered phase. The shape of the precipitates is governed by the energetics of the {001} and {111} faces of tetragonal inclusions in highly anisotropic media and is nearly cuboctahedral. The misfit strain relaxes through the generation of twins, which nucleate along the intersection lines of {001} and {111} faces. The twins impede facial development and further growth and ordering of precipitates, thereby freezing the precipitation process in its initial stage. For this reason, the phase segregation is difficult to reveal, and Ca_{1 ? x} La _x F_{2 + x} crystals appear homogeneous.     

Growth of epitaxial Cd<Subscript>1–<Emphasis Type="Italic">x</Emphasis> </Subscript>Mn<Subscript> <Emphasis Type="Italic">x</Emphasis> </Subscript>Te films

We have studied the growth and structure of epitaxial films of Cd_1–xMn_x (x = 0.03) diluted magnetic solid solutions grown on mica substrates by molecular beam epitaxy and identified conditions for producing n- and p-type epitaxial films. Using an additional Te vapor source and optimizing the substrate temperature in the growth process, we were able to obtain structurally perfect p-type Cd_1–xMn_xTe (x = 0.03) films with clean, smooth surfaces. The growth plane of the films on the mica substrates is (111) of a face-centered cubic lattice and their unit-cell parameter is а = 6.477 Å.     

Preparation and Properties of Mn<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Hg<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Te

Mn _x Hg_{1 ? x}Te (x = 0.05, 0.12) single crystals were grown by solid-state recrystallization, and their axial and radial homogeneity was assessed by optical, electrical, and electron-microscopic measurements. The crystals are p-type, with a hole concentration of (4.3–5.3) × 10²² m^?3 and Hall mobility in the range (410–570) × 10^?4 m²/(V s).     

Novel IV-Group Based Diluted Magnetic Semiconductor: Cr<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript>1−</Subscript><Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>

Cr _x Ge_{1? x} (x ～ 0.08) films were grown on GaAs (001) and Ge (001) substrates using molecular beam epitaxy (MBE) method, and their magnetic and transport properties have been studied in the temperature range between 1.8 and 300 K. All of the films exhibited weak paramagnetic behavior. Transport measurements showed that magnetoresistance ratio and the anomalous Hall resistance depend on the Cr concentration x and the kinds of substrate.     

Lattice parameter of PbTe<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Cl<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> solid solutions

The lattice parameter of PbTe_1?x Cl _x solid solutions is shown to be a nonmonotonic function of chlorine content, with a minimum at x = 0.005. The results are interpreted in terms of a self-compensation model.     

Visible-light-induced hydrogen evolution reaction with WS<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Se<Subscript>2−<Emphasis Type="Italic">x</Emphasis></Subscript>

WS₂ is a promising catalyst for the hydrogen evolution reaction. We have explored photocatalytic properties of ternary sulphoselenides of tungsten (WS _x Se _2?x ) by the dye-sensitized hydrogen evolution. WS _x Se _2?x solid solutions are found to exhibit high activity reaching 2339 μmol h^?1 g^?1 for WSSe, which is three times higher than that of WS₂ alone (866 μmol h^?1 g^?1 ). The turnover frequency is also high (0.7 h^?1 ). Such synergistic effect of selenium substitution in WS₂ is noteworthy.     

Magnetic Properties and Superconductivity in GdFeAsO<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>F<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>

Abstract A series of GdFeAsO_1−x F _x (x=0,0.1, 0.2, and 0.25) samples have been synthesized with conventional solid-state method. The phase purity is significantly improved by using Fe₂O₃ as the source of oxygen, compared to those prepared using Gd₂O₃ as the precursor. The lattice parameters are found to shrink with increasing fluorine doping level. The F-doped samples show a superconducting transition with T _c increasing with doping level, reaching T _c=40.1 K at x=0.25. A pronounced Curie–Weiss-like paramagnetic background, which is usually attributed to the impurity phases, is found to be independent of the fluorine doping level and proven to come from the Gd³⁺ in the GdFeAsO_1−x F _x compound with the effective magnetic moment of Gd³⁺ being μ _eff=7.83±0.05 μ_B. The extrapolated slope of dH_c2/dT|_T=Tc{dH}_{\mathrm{c2}}/dT|_{T=T_{\mathrm{c}}} in this system is about −4.5 T/K.     

Hydrochemical synthesis of AgCl<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Br<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript> solid solutions

A phase-component model is proposed for the hydrochemical conversion of silver chloride to AgCl _x Br_{1 − x} solid solutions, and the corresponding quantitative relations are derived. Experimental data are used to obtain a relation between the equilibrium composition of solid solutions and that of the liquid phase at different temperatures. The possible mechanisms of solid-solution formation are considered.     

Recombination processes in solution-grown CdSe<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Te<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> films

CdSe_1?x Te _x (0 ≤ x ≤ 0.4) films have been grown via precipitation from aqueous solutions, and their dark, photo-, and thermally stimulated conductivity has been investigated.     

Carrier mobility in Si<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> crystals

We have studied the 300-K carrier mobility in Czochralski-grown single crystals of undoped and heavily boron doped Si_{1 ? x} Ge _x (0 < x < 0.02) alloys. Comparison of our experimental data with theoretical predictions indicates that the Ge atoms in dilute Si_{1 ? x} Ge _x alloys do not act as neutral scattering centers. The carrier mobility related to the scattering by Ge atoms is governed by disorder (alloy) scattering. The carrier mobility in the boron-doped Si_{1 ? x} Ge _x alloys is much lower than that in the undoped alloys, depends very little on Ge content, and is governed by ionized impurity scattering.     

Structural Defects in Cd<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Zn<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>As<Subscript>2</Subscript> Solid Solutions

The impurity photoconductivity spectra of undoped Cd_{1 ? x} Zn _x As₂ single crystals with x ≤ 0.06 are measured in the range 85–300 K. The results are used to determine the ionization energies of donor and acceptor levels produced in the crystals by structural defects: ?_d ≈ 0.019, 0.26, and 0.42 eV; ?_a = 0.24 and 0.34 eV, respectively. The nature of the structural defects responsible for these levels is discussed.     

Dielectric relaxation in Se<Subscript>80−<Emphasis Type="Italic">x</Emphasis></Subscript>Te<Subscript>20</Subscript>Sn<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> chalcogenide glasses

This study reports the temperature and frequency dependence of dielectric constant (ε′) and dielectric loss (ε′′) in glassy Se_80−x Te₂₀Sn _x (x = 0, 2, 4, 6) alloys. The measurements have been made in the frequency range (1–500 KHz) and in the temperature range 305–335 K. The results indicate that the dielectric dispersion exists in the present glassy systems in the above frequency and temperature range. The composition dependence of the dielectric constant, dielectric loss and activation energy thermally activated crystallization is also discussed.