激光加工中自动旋转校位切割的研究

针对激光加工设备在Al2O3晶圆切割过程中的效率提高问题以及客户需求,通过图像识别功能,研究并设计实现晶圆的自动旋转校位与自动切割功能,极大地提高了晶圆切割效率。     

集成电路工艺中减薄与抛光设备的现状及发展

晶圆加工是单晶硅衬底和集成电路制造中的关键技术之一,为了得到更稳定的硅片,提高其平整度和表面洁净度,国内外技术人员越来越注重减薄与抛光设备的研究与改进。介绍了针对硅片平坦化工艺的减薄设备及现阶段加工过程中防止碎片的技术方法;介绍了化学机械抛光设备的技术发展现状以及针对硅片抛光的后清洗工艺。     

乙醇辅助激光烧蚀切割硅晶圆工艺

为了减小激光切割硅晶圆时的热效应,选择去离子水作为辅助液体进行激光切割实验,研究了水下切割时激光烧蚀激发气泡对硅片表面造成的不良影响。为解决水下激光切割进程中诱导气泡大面积粘结在硅片表面的问题,提出了去离子水混入乙醇溶液的实验方案,分析了水下激光切割中激光参数和乙醇浓度对切割质量的影响。实验结果表明,采用乙醇溶液作为辅助介质能明显减少粘结气泡的数量,减轻气泡破溃冲击带来的负面影响。实验采用乙醇浓度5 wt.%时切割得到的硅片比纯水中切割得到的硅表面影响区减小50%以上、切缝宽减幅约20%,有效提升了激光切割质量。     

晶圆激光切割技术的研究进展

综述了半导体领域晶圆切割技术的发展进程,介绍了刀片切割技术、传统激光切割技术、新型激光切割技术及整形激光切割技术的特点、工作原理和优缺点以及国内外使用晶圆切割技术获得的研究成果及其应用前景.与刀片切割技术相比,激光切割技术具有切割质量好、切割速度快等优点.详细介绍了以进一步改善晶圆切割质量和提高切割速度为目的的几类整形激光切割技术,包括微水导激光切割技术、隐形切割技术、多焦点光束切割、“线聚焦”切割、平顶光束切割和多光束切割等.随着技术的不断完善、切割设备的不断成熟,整形激光切割技术在未来的晶圆切割领域将具有广阔的应用前景.     

自动化设备发展简介

从1965年采用38毫米晶圆开始，如今半导体工业已经实现了300毫米晶圆的量产。图1展示了这种转变是如何以跨越式的脚步实现的。每一种更大尺寸的晶圆都需要采用更多的自动化生产措施，每步自动工艺还可以通过提高产率和设备的使用效率给晶圆厂带来更好的经济效益。     

SPI新型激光器用于硅片切割

在太阳能电池和半导体制造中,硅原料是以厚0.2～1.5 mm,直径100～300 mm的典型形式的晶圆存在.通常情况下,硅晶圆是由金刚石锯切割而成的,偶而也有用划线器和剥裂加工的.随着激光器技术的不断完善和发展,越来越多的硅片加工采用激光技术.     

紫外激光切割磷化铟晶圆的工艺研究

为提高晶圆的集成度,提升晶粒分离的质量和效率,采用以二极管泵浦的纳秒级调Q紫外激光切割磷化铟晶圆,利用劈裂机进行裂片,使用金相显微镜检测磷化铟晶圆的切割深度与切口宽度。运用单参数变化法分析重复频率、占空比、切割速度和辅助气体压力对切割深度影响,结果表明,切割深度与重复频率、切割速度近似呈反比关系,与占空比近似呈正比关系,而辅助气体压力对切割深度的影响不大。通过正交实验设计得到切口宽度的最优参数,当重复频率为200 kHz,占空比为10%,切割速度为300 mm/s,气压为0.2 MPa时,最小切口宽度达到6.2μm。综合分析了激光工艺参数和辅助工艺与裂片合格率的关系,最终使磷化铟晶圆裂片合格率达到98%。     

自动对准定位算法技术在探针设备中的应用研究

论述了数字图像处理技术在全自动探针测试设备中的应用,介绍了图像处理中模板匹配算法原理以及晶圆自动对准定位技术的原理与实现手段.该算法能够完成晶圆片自动对准和晶圆启测测试芯粒自动定位,为探针设备的精确快速测试提供了可靠性保障.     

东精精密：以新技术和新产品拓展中国市场

成立于1949年的东精精密目前在半导体应用领域具有横跨硅片制造、芯片制造、测试封装等的广泛产品线，包括探针台、光刻机、CMP装置、晶片外观检查装置、划片机、硅片倒角研磨机、背面减薄抛光机等。据东精精密设备（上海）有限公司总经理堀江元介绍，目前占公司营业额比重较大的有三类产品：晶圆探针测试台、晶圆背面研抛一体机和划片机。     

多线切割机的切割运动分析

半导体晶圆不断向大直径方向发展,内圆刀具的单片切割方式已经不能满足大直径晶圆的切片要求,随着多线锯切割技术的完善,多线切割机已经是半导体材料切片的主流设备。对砂粒在切割过程中的运动进行了分析,同时对钢线张力、切削进给运动进行了理论分析。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.