Growth of Bi1.5MgNb1.5O7 thin films on Pt/Ti/SiO2/Si substrates by RF magnetron sputtering

In this letter, bismuth magnesium niobate (Bi_1.5MgNb_1.5O₇, BMN) thin films were deposited on Pt/Ti/SiO₂/Si substrates by using radio-frequency magnetron sputtering at various substrate temperatures. Based on the phase compositions and microstructures of these samples, we discussed the nucleation and growth of the BMN thin films and how the substrate temperature influenced these processes. The thin film begins to crystallize at 450 °C, and the annealed films were all composed of the cubic pyrochlore phase with a strong (222)-preferred orientation. The film deposited at 450 °C exhibited a large dielectric constant of 173, and a tunability of 26.6 % was obtained at a max dc bias field of 0.8 MV/cm.     

Effect of Annealing on Virgin and Recycled Carbon Fiber Electrochemically Deposited with N-type Bismuth Telluride and Bismuth Sulfide

N-type thermoelectric bismuth telluride (Bi₂Te₃) and bismuth sulfide (Bi₂S₃) were deposited on virgin carbon fiber (VCF) and recycled carbon fiber (RCF) substrates by electrodeposition. The effects of annealing on the surface morphology and the Seebeck coefficient of the Bi₂Te₃ and Bi₂S₃ films were investigated. A nearly stoichiometric N-type Bi₂Te₃ was obtained from an electrolyte solution of 8 mM of Bi(NO₃)₃.5H₂O and 10 mM of TeO₂, which displayed the highest Seebeck coefficient of ?20.01 and ?13.0 µV/K for VCF and RCF, respectively. The deposition of Bi₂S₃ was slightly off-stoichiometry, but the improvement was still significant with a Seebeck coefficient of ?16.3 and ?12.4 µV/K for VCF and RCF, respectively. The effect of varying the annealing temperature (275°C and 350°C) and annealing time (2 and 3 hours) was studied on a nearly stoichiometric N-type Bi₂Te₃. The result shows an improvement in the Seebeck coefficient by 1.51–1.24 times at 350°C for 2 hours.     

Optimizing phase and microstructure of chemical solution-deposited bismuth ferrite (BiFeO3) thin films to reduce DC leakage

Polycrystalline bismuth ferrite (BiFeO₃ or BFO) thin films were prepared by chemical solution deposition to explore the impact of processing conditions including annealing temperature, percent excess bismuth, and gel drying temperature on film microstructure and properties. Incorporating 0–5 % excess Bi and annealing at 550 °C in air produced stoichiometric single-phase BiFeO₃ films. Deviation from this temperature yielded the bismuth-rich Bi₃₆Fe₂O₅₇ phase at temperatures below 550 °C or the bismuth-deficient Bi₂Fe₄O₉ phase at temperatures above 550 °C, both of which contributed to higher DC leakage. However, even single-phase BiFeO₃ films produced at 550 °C show high DC leakage (~1.2 × 10^?1 A/cm² at 140 kV/cm) due to a porous microstructure. We have thus investigated unconventional thermal treatments that significantly increase film densification while maintaining phase purity. Under these revised thermal treatment conditions, room temperature leakage current values are reduced by three orders of magnitude to ~1.0 × 10^?4 A/cm² at 140 kV/cm.     

Microstructural and surface morphological studies on Co doped ZnS diluted magnetic semiconductor thin films

Microstructural and surface morphological studies of Co (2.5%) doped ZnS thin films deposited at different substrate temperatures (T_S) of 200, 400 and 600 °C by means of pulsed laser deposition are presented. The deposited films are in wurtzite-hexagonal crystal structure as confirmed by X-ray diffraction and Raman spectroscopy techniques. The films deposited at higher T_S show columnar morphology, as evidence by transmission electron microscopy measurements. Images of the surface topography have been taken by atomic force microscopy (AFM) for the film deposited at different T_S. The film deposited at T_S of 200 °C shows cone-like structures while deposited at T_S of 400 and 600 °C show columnar structures. A fractal analysis has been performed on AFM images to understand the microstructure and surface morphology of thin film at different T_S. Fractal analysis also reveals the morphological changes in the film with increasing T_S. The observed ferromagnetism is correlated with columnar growth of the film which can be used as diluted magnetic semiconductor for spintronic applications.     

Intrinsic defects and structural phase of ZnS nanocrystalline thin films: effects of substrate temperature

Fabrications of ZnS nanocrystalline thin films at different substrate temperatures (T_S) of 200, 300 and 400 °C by means of pulsed laser deposition are presented. Thin film deposited at T_S of 200 °C is in cubic zinc-blende (ZB) structure while those deposited at T_S of 300 and 400 °C are in hexagonal wurtzite (W) phase. The grain size, surface roughness and bandgap of the films increases with increasing T_S. The zinc vacancies and interstitials in the films increases while sulfur vacancies decreases with increasing T_S. The variation of zinc and sulfur vacancies in ZnS films with T_S is responsible for structural phase transition from ZB to W which causes the change in energy bandgap.     

Structural and optical properties of sulfurized Cu2ZnSnS4 thin films from Cu–Zn–Sn alloy precursors

This study reports the preparation of Cu₂ZnSnS₄ (CZTS) thin films by magnetron sputtering deposition with a Cu–Zn–Sn ternary alloy target and sequential sulfurization. The effects of substrate temperatures on the structural, morphological, compositional as well as optical and electrical properties were characterized. The results showed the CZTS thin films prepared by sulfurization at substrate temperature of 570 °C yielded secondary phases along with CZTS compound. The relatively good properties of CZTS thin film were obtained after sulfurization at substrate temperature of 550 °C. This CZTS film showed compact structure with large grain size of 900 nm, direct optical band gap of 1.47 eV, optical absorption coefficient over 10⁴ cm^?1, resistivity of 4.05 Ω cm, carrier concentration of 8.22 × 10¹⁸ cm^?3, and mobility of 43.38 cm² V^?1 S^?1.     

The Effect of Substrate Temperature on the Optical Properties of MoO3 Nano-crystals Prepared Using Spray Pyrolysis

In this study, thin films of molybdenum oxide were prepared by spray pyrolysis technique on glass substrates. The influence of substrate temperature on their crystallographic structure, surface morphology, and optical properties was studied. The formation of a MoO₃ film on the substrate was confirmed through XRD analysis. Furthermore, the presence of the two phases α and β in each of the films was evident. The percentage of phase α varied from 55 % for the film deposited at 200 °C up to 97 % for the film deposited at 400 °C. According to SEM images, MoO₃ films have a sponge-type structure on the order of nanometers. Both the optical gap and the refraction index strongly depend on substrate temperature. The optical gap decreases from 3.63 eV for the film deposited at 150 °C up to 3.30 eV for the one prepared at 400 °C. On the contrary, the refraction index measured at 800 nm increases from 1.54 up to 1.61 for the films prepared at 150 °C and 400 °C, respectively.     

CuIn(S,Se)2 thin films prepared by selenization and sulfurization of sputtered Cu–In precursors

CuIn(S,Se)₂(CISSe) thin films have been prepared onto soda-lime-glass (SLG) substrates by selenization and sulfurization of magnetron sputtered Cu–In precursors. The results indicate that the properties of the CISSe films are strongly dependent on the post-annealing treatment. After annealing at 400 °C for 20 min, the CISSe films have formed tetragonal (chalcopyrite) crystal structure and the diffraction peaks of the films shift systematically to the left with the temperature varying from 400 °C to 500 °C. EDAX study reveals that the compositions of CISSe films are Cu_0.83In_1.17S_1.67Se_0.3, Cu_0.86In_1.13S_1.61Se_0.4 and Cu_0.82In_1.15S_1.54Se_0.49 after annealing at 400 °C, 450 °C and 500 °C, respectively. The direct optical band gaps of the films slightly decrease from 1.44 ev to 1.32 ev with the increase of the temperature from 400 °C to 500 °C, and the optical absorption coefficient is over 10⁵ cm⁻¹. The films annealed at 400 °C–500 °C are all found to be p-type and the resistivity is almost 10⁻²–10⁻³ Ω cm. The carrier mobility of the film at 500 °C is almost as high as 1.701 cm²/V S.     

Bi2MoO6 dielectric thin films fabricated by thermal oxidation of Bi/Mo thin films at ultra-low temperature

Bi/Mo multilayer thin films are deposited on Si/SiO₂/Pt substrates by direct current magnetron sputtering. The effect of annealing temperature on the microstructure, dielectric and electrical properties of the as-sputtered films is characterized systematically. X-ray diffraction data indicate that the films annealed at 450–600 °C are a mixture of diphase with the main phase Bi₂MoO₆ and secondary phase Bi₂Mo₂O₉. Results of scanning electron microscope observation show that the films annealed at 500–550 °C are dense and uniform, in particular the films annealed at 500 °C exhibit optimal dielectric and electrical properties with dielectric constant as high as 37.5, dielectric loss 1.06 %, temperature coefficient of dielectric constant ?10.86 ppm °C^?1 at 1 kHz, and leakage current density of 1.46 × 10^?7 A mm^?2 at an electric field of 18.2 kV mm^?1. With the advantages of ultralow densification temperature (500 °C) and very high sputtering deposition rate (76 nm min^?1), it is anticipated that thermal oxidation method of the sputtered Bi/Mo thin films could be a promising technique for fabrication of Bi₂MoO₆ ceramic thin film embedded-capacitors.     

Effects of growth temperature on electrical and structural properties of sputtered GaN films with a cermet target

GaN films have been deposited at 100–400 °C substrate temperature on Si (100) and sapphire (0001) substrates by RF reactive sputtering in an (Ar + N₂) atmosphere. A (Ga + GaN) cermet target for sputtering was made by hot pressing the mixed powders of metallic Ga and ceramic GaN. The effects of substrate temperature on the GaN formation and its properties were investigated. The diffraction results showed that GaN films with a preferential (10–10) growth plane had a wurtzite crystalline structure. GaN films became smoother at higher substrate temperature. The Hall effect measurements showed the electron concentration and mobility were 1.04 × 10¹⁸ cm^?3 and 7.1 cm² V^?1 s^?1, respectively, for GaN deposited at 400 °C. GaN films were tested for its thermal stability at 900 °C in the N₂ atmosphere. Electrical properties slightly degraded after annealing. The smaller bandgap of ~3.0 eV is explained in terms of intrinsic defects and lattice distortion.     

Growth and properties of Cu<Subscript>2</Subscript>ZnSnS<Subscript>4</Subscript> thin films prepared by multiple metallic layer stacks as a function of sulfurization time

In this paper, we report the two stage growth of Cu₂ZnSnS₄ (CZTS) thin films as a function of sulfurization time. First, magnetron sputtered metallic precursors were deposited sequentially (Zn/Cu/Sn/Cu) over rotating glass substrates held at 230?°C. Later, the sputtered precursors were heat treated at 500?°C in the ambiance of sulfur for various time durations in the range, 10–120 min. The sulfur treated samples were examined using various analytical tools to understand the role of sulfurization time on the CZTS growth and properties. From composition and structural analysis, Zn/Cu/Sn/Cu precursors sulfurized for shorter duration (10 and 20 min) revealed severe deficiency of sulfur that resulted in several metallic, bi-metallic and metal sulfide phases. With the increase of sulfurization time to 30 min, sulfur incorporation was enhanced and reached stoichiometric ratio (~50% S) for CZTS growth, however, samples were poorly crystalline in nature and consisted of prominent Cu_2?xS phase as well. The Zn/Cu/Sn/Cu precursors sulfurized for 60 min exhibited prominent CZTS phase without Cu_2?xS phase. Further, rise in sulfurization time to 120 min enabled drastic improvement in crystallinity of CZTS phase. Raman mapping over 60 µm × 60 µm for these films confirmed the homogeneous phase growth of CZTS. XPS study revealed the oxidation states of Cu¹⁺, Zn²⁺, Sn⁴⁺ and S^2? in CZTS films. The optimized films showed high absorption coefficient of 10⁵ cm^?1 with an optical band gap of 1.51 eV. These films showed leaf like grain morphology with high mobility and low resistivity of 18.2 cm²/V-s and 0.7 Ω-cm, respectively.     

Enhancement of photosensitivity by annealing in Bi2S3 thin films grown using SILAR method

Bi₂S₃ thin films were grown by successive ionic layer adsorption and reaction method (SILAR) onto the glass substrates at room temperature. The as prepared thin film were annealed at 250 °C in air for 30 min. These films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and electrical measurement systems. The X-ray diffraction patterns reveal that Bi₂S₃ thin film have orthorhombic crystal structure. SEM images showed uniform deposition of the material over the entire glass substrate. The optical energy band gap observed to be decreased from 1.69 to 1.62 eV for as deposited and annealed films respectively. The I–V measurement under dark and illumination condition (100 W) show annealed Bi₂S₃ thin film gives good photoresponse as compared to as deposited thin film and Bi₂S₃ thin film exhibits photoconductivity phenomena suggesting its useful in sensors device. The thermo-emf measurements of Bi₂S₃ thin films revealed n-type electrical conductivity.     

Growth and characterization of Bi2Se3 thin films by pulsed laser deposition using alloy target

Bi₂Se₃ thin films were deposited on the (100) oriented Si substrates by pulsed laser deposition technique at different substrate temperatures (room temperature −400 °C). The effects of the substrate temperature on the structural and electrical properties of the Bi₂Se₃ films were studied. The film prepared at room temperature showed a very poor polycrystalline structure with the mainly orthorhombic phase. The crystallinity of the films was improved by heating the substrate during the deposition and the crystal phase of the film changed to the rhombohedral phase as the substrate temperature was higher than 200 °C. The stoichiometry of the films and the chemical state of Bi and Se elements in the films were studied by fitting the Se 3d and the Bi 4d5/2 peaks of the X-ray photoelectron spectra. The hexagonal structure was seen clearly for the film prepared at the substrate temperature of 400 °C. The surface roughness of the film increased as the substrate temperature was increased. The electrical resistivity of the film decreased from 1 × 10⁻³ to 3 × 10⁻⁴ Ω cm as the substrate temperature was increased from room temperature to 400 °C.     

Quaternary co-electrodeposition of the Cu2ZnSnS4 films as potential solar cell absorbers

Cu₂ZnSnS₄ (CZTS) films are successfully prepared on Mo substrate by electrochemical epitaxial method. An electrolyte contains 0.124 M CuSO₄·5H₂O, 0.14 M ZnSO₄, 0.13 M SnCl₂·2H₂O, 0.16 M Na₂S₂O₃·5H₂O, 2.25 M NaOH, 1.36 M C₆H₅Na₃O₇, 1.00 M C₄H₆O₆. The equilibrium potential for quaternary co-electrodeposited solution is set at ?1.1 ～ ?1.20 V. The results show that elements are deposited in the following sequence: Cu/S/Zn/S/Cu/S/Sn/S…. The ternary and quaternary compounds are formed with the increasing temperature during annealing. Finally the CZTS film can be well formed at 550 °C. The resistivity of CZTS is about 5.6 × 10⁴ Ω cm.     

Growth and characterizations of dual ion beam sputtered CIGS thin films for photovoltaic applications

The growth of CIGS thin films on soda-lime glass substrates at different substrate temperatures by dual ion beam sputtering system in a single-step route from a single quaternary sputtering target with the composition of Cu (In_0.70 Ga_0.30) Se₂ was reported. The effects of the substrate temperature on structural, optical, morphological and electrical properties of CIGS films were investigated. Stoichiometry of one such film was investigated by X-ray photoelectron spectroscopy. All CIGS films had demonstrated a strong (112) orientation located at 2θ ~26.70^o, which indicated the chalcopyrite structure of films. The value of full-width at half-maximum of (112) peak was reduced from 0.58° to 0.19° and crystallite size was enlarged from 14.98 to 43.05 nm as growth temperature was increased from 100 to 400 °C. However, atomic force microscope results showed a smooth and uniform surface at lower growth temperature and the surface roughness was observed to increase with increasing growth temperature. Hall measurements exhibited the minimum film resistivity of 0.09 Ω cm with a hole concentration of 2.42 × 10¹⁸ cm^?3 and mobility of 28.60 cm² V^?1 s^?1 for CIGS film grown at 100 °C. Film absorption coefficient was found to enhance nominally from 1 × 10⁵ to 2.3 × 10⁵ cm^?1 with increasing growth temperature from 100 to 400 °C.     

Dependence of the properties of copper zinc tin sulfide thin films prepared by electrochemical deposition on sulfurization temperature

Copper zinc tin sulfide (CZTS, Cu₂ZnSnS₄) is a low band gap semiconductor that is attractive for use in solar cells. We investigated the dependence of the structure and properties of CZTS thin films on the temperature used to sulfurize precursor thin films composed of copper, zinc and tin fabricated by electrochemical deposition. The precursor films were sulfurized in a furnace with three zones, which allowed fine control of the sulfurization temperature between 250 and 400 °C. X-ray diffraction and Raman spectroscopic measurements confirmed that the films were composed of CZTS following sulfurization. The grain size and crystallinity of the films increased with sulfurization temperature. The composition of CZTS also varied with sulfurization temperature. The proportions of Cu and Zn increased while that of Sn decreased with increasing sulfurization temperature. Absorption and reflectance spectra revealed that the absorption coefficients and band gaps of the CZTS films varied with sulfurization temperature between 3–4.1 × 10⁴ cm^?1 and 1.4–1.53 eV, respectively. Solar cells containing CZTS sulfurized at 400 °C showed a maximum efficiency of 2.04 %, which was attributed to the higher crystallinity and larger grain size of CTZS compared with thin films sulfurized at lower temperatures. Our results show that control of sulfurization temperature is an important factor in optimizing the performance of CZTS thin films in solar cells.     

Bi1.5Zn1.0Nb1.5O7 thin films deposited at low temperature and post-annealed for crystallization

Near-stoichiometric Bi_1.5Zn_1.0Nb_1.5O₇ (BZN) thin films were prepared on Pt/TiO₂/SiO₂/Si (100) substrates at 400 °C under an oxygen pressure of 10 Pa by using pulsed laser deposition process. The as-deposited BZN thin films were post-annealed at 700 °C for 30 min in situ vacuum chamber (in situ) and in oxygen ambient oven (ex situ). The crystallinity, microstructure and electrical properties of BZN thin films were investigated. The X-ray diffractometer results indicate that BZN thin films deposited at 400 °C are amorphous in nature and the post-annealed thin films exhibit a cubic pyrochlore structure. The as-deposited BZN thin films show permittivity of 68 and loss tangent of 0.0011 at 10 kHz, respectively. After a post-annealing at 700 °C for 30 min, the dielectric properties of thin films are significantly improved. Permittivity and loss tangent of the in situ annealed films are 127 and 0.005 at 10 kHz, respectively. And the films post-annealed in O₂ oven show the largest permittivity of 170 and tangent of 0.006. The improved dielectric properties can attribute to the crystallization of thin films. BZN thin films deposited at low temperature and crystallized at high temperature show the dielectric tunability without an electric breakdown to the maximum measurement bias voltage. And BZN thin films also show the excellent leakage current properties.     

Preparation of Epitaxial MgO Films Deposited by RF Magnetic Sputtering on the IBAD-MgO Substrate

We deposited epi-MgO films on the textured ion beam assisted deposition (IBAD)-MgO substrates by RF magnetic sputtering at different substrate temperatures (600–850 °C), RF powers (110–224 W) and oxygen partial pressures (19.5–58.6 mTorr). The microstructure and surface morphology of epi-MgO films were characterized by X-ray diffraction (XRD) and atom force microscope (AFM). It was found that epi-MgO films with c-axis orientation could be easily fabricated for broad parameter ranges. But the in-plane full width half maximum (FWHM) of the epi-MgO film was dependent on the parameters, and the epi-MgO film with the smallest FWHM value of 5.22° was obtained at the optimum parameters. What’s more, the GdBa₂Cu₃O₇ films deposited on the epi-MgO/IBAD-MgO substrate by RF magnetic sputtering showed c-axis orientation.     

Effect of the substrate temperature on the structural, optical and electrical properties of spray-deposited CdS:B films

Boron doped CdS films have been deposited by spray pyrolysis method onto glass substrate temperature in the range of 350–450 °C. And the effect of substrate temperature (T _s) on the structural, electrical and optical properties of the films were studied. The structural properties of boron doped CdS films have been investigated by (XRD) X-ray diffraction techniques. The X-ray diffraction spectra showed that boron doped CdS films are polycrystalline and have a hexagonal (wurtzite) structure. By using SEM analysis, the surface morphology of the films was observed as an effect of the variation of substrate temperature. The substrate temperature is directly related with the shift detected in the band gap values derived from optical of parameters and the direct band gap values were found to be in the region of 2.08–2.44 eV. The electrical studies showed that the film deposited at the substrate temperature 400 °C had high carrier concentration and Hall mobility and minimum resistivity. This resistivity value decreased with increase in temperature up to 400 °C indicating the semiconducting nature of B- doped CdS films. The lattice parameter, grain size, microstrain and dislocation densities were calculated and correlated with the substrate temperature (T _s ).     

Effect of growth temperature on structural, electrical and optical properties of dual ion beam sputtered ZnO thin films

ZnO epitaxial thin films were grown on p-type Si(100) substrates by dual ion beam sputtering deposition system. The crystalline quality, surface morphology, optical and electrical properties of as-deposited ZnO thin films at different growth temperatures were studied. Substrate temperature was varied from 100 to 600 °C at constant oxygen percentage O₂/(O₂ + Ar) % of 66.67 % in a mixed gas of Ar and O₂ with constant chamber pressure of 2.75 × 10^?4 mBar. X-Ray diffraction analyses revealed that all the films had (002) preferred orientation. The minimum value of stress was reported to be ?0.32 × 10¹⁰ dyne/cm² from ZnO film grown at 200 °C. Photoluminescence measurements demonstrated sharp near-band-edge emission (NBE) was observed at ~375 nm along with deep level emission (DLE) in the visible spectral range at room temperature. The DLE Peak was found to have decrement as ZnO growth temperature was increased from 200 to 600 °C. The minimum FWHM of the NBE peak of 16.76 nm was achieved at 600 °C growth temperature. X-Ray photoelectron spectroscopy study revealed presence of oxygen interstitials and vacancies point defects in ZnO film grown at 400 °C. The ZnO thin film was found to be highly resistive when grown at 100 °C. The ZnO films were found to be n-type conducting with decreasing resistivity on increasing substrate temperature from 200 to 500 °C and again increased for film grown at 600 °C. Based on these studies a correlation between native point defects, optical and electrical properties has been established.