Microwave dielectric properties of Sr<Subscript>0.7</Subscript>Ce<Subscript>0.2</Subscript>TiO<Subscript>3</Subscript>–Sr(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript> ceramics

xSr_0.7Ce_0.2TiO₃–(1???x)Sr(Mg_1/3Nb_2/3)O₃ ceramics, referred to xSCT–(1???x)SMN, were successfully produced by conventional solid-state sintered technology. The compounds, belonging to perovskites with a secondary phase of CeO₂, can be detected even with x down to 0.1 of SCT composition. The overall trend for grain growth illustrates the increase with increasing SCT doping level. The Raman peak at 825 cm^?1 splits into two peaks and causes red shift phenomenon. XPS spectra indicate that Ti and Nb ions exist respectively in tetravalence and pentavalence, and Ce ions exist in trivalence and tetravalence. Dielectrics constant (ε _r ) of SCT–SMN ceramics gradually increases with increasing theoretical dielectric polarizabilities. A wider width of the 825 cm^?1 for FWHM of A_1g mode Raman peaks suggests to a lower Q?×?f value. The increasing tolerance factor in agreement with temperature coefficient of resonant frequency (τ _f ), denotes that the rise of perovskite symmetry. The 0.1SCT–0.9SMN ceramic sintered at 1450?°C for 4 h illustrates excellent microwave dielectric properties with ε _r ?~?35.4, Q?×?f?~?11282 GHz and τ _f ?~?1.7 ppm/°C. Activation energies of 0.1SCT–0.9SMN ceramic at 100, 300 and 500 V, are ~0.436, 0.427 and 0.331 eV, respectively, indicative of a decreased trend with external electric field.     

Electrical properties of B site substituted (K<Subscript>0.48</Subscript>Na<Subscript>0.52</Subscript>)(W<Subscript>2/3</Subscript>Bi<Subscript>1/3</Subscript>)<Subscript>x</Subscript>Nb<Subscript>1−x</Subscript>O<Subscript>3</Subscript> piezoceramics

Lead-free (K_0.48Na_0.52)(W_2/3Bi_1/3)_xNb_1−xO₃ (KNN-WBi) piezoceramics with x ranging from 0.004 to 0.010 were synthesized by conventional ceramic processing. The sintered KNN-WBi ceramics showed perovskite structure without detectable secondary phase containing W and Bi. With increasing x, the orthorhombic-tetragonal phase transition temperature (T _O-T) decreased from 200 to 184 °C whereas, the tetragonal-cubic phase transition temperature (T _C) decreased slightly. With the doping of (W_2/3Bi_1/3), the piezoelectric properties were greatly improved and the piezoelectric constants d ₃₃, k _p, Q _m exhibited maximum values of 136 pC/N, 43.3% and 175, respectively at x = 0.008. The KNN-WBi ceramics also exhibited good ferroelectric properties with remnant polarizations P _r higher than 25 μC/cm² and coercive fields E _c lower than 1,000 V/mm. The results strongly suggest that the B site doping of constructed quinquevalent element is an effective method for the investigation of potassium sodium niobate system.     

Structural and electrical properties of Bi<Subscript>1/2</Subscript>Na<Subscript>1/2</Subscript>TiO<Subscript>3</Subscript>–BaTiO<Subscript>3</Subscript>–Sr<Subscript>3</Subscript>CuNb<Subscript>2</Subscript>O<Subscript>9</Subscript> lead-free piezoelectric ceramics

The structure, microstructure, field-induced strain, ferroelectric, piezoelectric and dielectric properties of (1 ? x) (Bi_0.5Na_0.5)_0.935Ba_0.065TiO₃–xSr₃CuNb₂O₉ (BNT-BT6.5–xSCN, with x = 0, 0.003, 0.006, 0.009) ceramics were investigated. X-ray diffraction patterns show that all samples are pure perovskite structure and Sr₃CuNb₂O₉ (SCN) effectively diffused into the 0.935Bi_0.5Na_0.5TiO₃–0.065BaTiO₃ (BNT–BT6.5) solid solution which also reflected in the Raman spectra and the energy disperse spectroscopy (EDS) analysis. With the increases of SCN content, the coercive field (E _c  = 18.41 kV/cm) decreases greatly, whereas the remnant polarization (P _r  = 29.11 μC/cm²) increases a little at x = 0.003 which is showed in the polarization hysteresis (P–E) loops, the result indicate that the ferroelectric order would be disrupted. Around critical composition (x = 0.003) at a driving field of 60 kV/cm, a large unipolar strain of 0.29 % with a normalized strain (d ₃₃ ^*  = 483 pm/V) is obtained at room temperature. The results indicate that BNT-BT6.5-xSCN ceramics with excellent properties are promising to replace lead-based piezoelectric ceramics and can be used in practical applications.     

SmAlO<Subscript>3</Subscript> + Ba(Zn<Subscript>1/2</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript>: microwave ceramic composite

The 0.1SmAlO₃ + 0.9Ba(Zn_1/2Nb_2/3)O₃ composite is prepared through the solid state ceramic route. The structure of the materials is studied using X-Ray diffraction analysis. The microstructure is studied using scanning electron microscopy and the elemental composition by energy dispersive spectrometry. The dielectric properties in the radio and microwave frequencies are measured. The photoluminescence property of the sample is also analyzed. The material has dielectric constant (ε _r ) = 37, temperature coefficient of resonant frequency (τ _f ) = +25 ppm/°C and high quality factor. The measured values of ε _r and τ _f are compared with the corresponding theoretical values. The composite is useful in the field of optoelectronics and microwave communication.     

Electronic and optoelectronic properties of Al/coumarin doped Pr<Subscript>2</Subscript>Se<Subscript>3</Subscript>–Tl<Subscript>2</Subscript>Se/p-Si devices

In this study, coumarin-doped Pr₂Se₃–Tl₂Se (0.00, 0.05, 0.1, 0.3 wt% coumarin) were covered on the front side of a p-Si substrate by drop coating method and thus Al/coumarin doped Pr₂Se₃–Tl₂Se/p-Si diodes were fabricated. The electronic and optoelectronic properties of the prepared diodes were investigated. The highest rectification ratio (RR?=?I_F/I_R) value was found to be 2.24?×?10⁵ for the diode having 0.05 wt% coumarin doping at dark and ±?5 V. Also, the highest I_photo/I_dark photosensitivity was found to be 1327 for the diode which has 0.1 wt% coumarin doping at 100 mW/cm² and ??5 V. The photocurrent of the diodes is higher than the dark current and increases by the increase of the light intensity. These results confirm that the fabricated diodes show a strong photovoltaic behavior. The electronic parameters of the diodes, for example ideality factor and barrier height values, were calculated by the use of current–voltage characteristics. The transient measurement proves that the diodes show both photodiode and photocapacitor behaviors. The change on the conductance and capacitance by the frequency is attributed to the existence of interface states. Thus, the obtained results suggest that the prepared diodes might be used as a photosensor in the applications of optoelectronic.     

La<Subscript>1−x</Subscript>Ag<Subscript>x</Subscript>FeO<Subscript>3</Subscript>/halloysites nanocomposite with enhanced visible light photocatalytic performance

La_1?xAg_xFeO₃/halloysites nanotubes (HNTs) nanocomposite was synthesized by sol–gel method. It was characterized by X-ray diffraction, transmission electron microscope, Fourier transform infrared spectroscopy and UV–visible diffused reflectance spectroscopy measurements. The photo-activity of the La_1?xAg_xFeO₃/HNTs nanocomposite was evaluated via degradation of methylene blue (MB) under visible-light irradiation. The results showed that the HNTs with unique pore structure favored the adsorption of organic molecules. Adequate Ag⁺ doping improved the absorption ability for visible light. The La_0.95Ag_0.05FeO₃/HNTs demonstrated the best photocatalytic performance, which achieved as high as 99 % for MB degradation exposed 2 h irradiation. However,further increasing of Ag⁺ doping gradually reduced the photocatalytic activity. The nanocomposite catalyst showed outstanding recyclability after eight cycles which still remained up to 90 %.     

The crystallographic orientation relationship between Al<Subscript>2</Subscript>O<Subscript>3</Subscript> and MgAl<Subscript>2</Subscript>O<Subscript>4</Subscript> in the composite material Al<Subscript>2</Subscript>O<Subscript>3</Subscript>/Al–Mg–Si alloy

The formation mechanism of spinels on Al₂O₃ particles in the Al₂O₃/Al–1.0 mass% Mg₂Si alloy composite material has been investigated by transmission electron microscopy (TEM) in order to determine the crystallographic orientation relationship. A thin sample of the Al₂O₃/Al–Mg–Si alloy composite material was obtained by the FIB method, and the orientation relationship between Al₂O₃ and MgAl₂O₄, which was formed on the surface of Al₂O₃ particles, was discovered by the TEM technique as follows:

Microstructure and properties of the Ba<Subscript>0.75−x</Subscript>Ca<Subscript>x</Subscript>La<Subscript>0.25</Subscript>Fe<Subscript>11.6</Subscript>Co<Subscript>0.25</Subscript>Ti<Subscript>0.15</Subscript>O<Subscript>19</Subscript> hexaferrites

In the case of Ti⁴⁺ remain unchanged, the Ca²⁺ substituted Ba_0.75?xCa_xLa_0.25Fe_11.6Co_0.25Ti_0.15O₁₉ (0?≤?x?≤?0.05) were prepared by conventional solid-state reaction method at temperature of 1280 °C. A ball-to-power weight ratio of 10:1. Their crystal structure and magnetic properties were mainly investigated. The results show that the single magnetoplumbite phase structure transformed into the multiphase structure. Meanwhile, the small amount of α-Fe₂O₃ phase existed in M-type phase. The micrographs were observed by a field emission scanning electron microscopy (SEM). Vibrating sample magnetometer (VSM) was used to analyze the magnetic properties. The saturation magnetization (M _s ) first increases then decreases when x from 0 to 0.03. But, when x from 0.03 to 0.05, the saturation magnetization (M _s ) first increases then decreases too. The maximum value is at x?=?0.04 (M _s ?=?70.73 emu/g). The value of coercivity (H _c ) first increases then decreases when x from 0 to 0.04. But, the value increased when x from 0.04 to 0.05. The maximum value is at x?=?0.02 (H _c ?=?1691 Oe).     

BaFe<Subscript>12</Subscript>O<Subscript>19</Subscript> films produced from BaFe<Subscript>2</Subscript>O<Subscript>4</Subscript>/α-Fe<Subscript>2</Subscript>O<Subscript>3</Subscript> heterostructures

BaFe₁₂O₁₉ hexaferrite films have been produced on thermally oxidized single-crystal silicon (SiO₂/Si) substrates by sequential ion-beam sputtering of BaFe₂O₄ and α-Fe₂O₃ targets in an argon-oxygen atmosphere. Their crystal structure has been studied, and the origin of the impurity phases forming during heat treatment has been identified. The results show that heat treatment may lead to the formation of eutectic melts. As a result, the hexaferrite films may contain spherulites.     

Variable—Range hopping in Fe<Subscript>2</Subscript>O<Subscript>3</Subscript>-Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>-K<Subscript>2</Subscript>B<Subscript>4</Subscript>O<Subscript>7</Subscript> glasses

The dc conductivity of the glasses in the Fe₂O₃-Bi₂O₃-K₂B₄O₇ system was studied at temperatures between 223 and 393 K. At temperatures from 300 to 223 K, T^–1/4 (T is temperature) dependence of the conductivity was found, however, both Mott variable-range hopping and Greaves intermediate range hopping models are found to be applicable. Mott and Greaves parameters analysis gave the density of states at Fermi level N (E_F) = 3.13 × 10²⁰–21.01 × 10²⁰ and 1.93 × 10²¹–16.39 × 10²¹ cm^–3eV^–1 at 240 K, respectively. The variable-range hopping conduction occurred in the temperature range T = 300–223 K, since W_D was found to be large (W_D = 0.08–0.14 eV for these glasses) and dominated the conduction at T < 300 K.     

Aging and thermal stability of [001]<Subscript>c</Subscript>- and [111]<Subscript>c</Subscript>-poled 0.63Pb(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript>–0.37PbTiO<Subscript>3</Subscript> single crystals

The aging characteristics and thermal stability of [001]_c- and [111]_c-poled tetragonal 0.63Pb(Mg_1/3Nb_2/3)O₃–0.37PbTiO₃ single crystals have been studied. For [001]_c-poled crystal, the d₃₃, \(\varepsilon _{{33}}^{T}\), k_t, and k₃₃ increase slightly during the aging process due to the gradual depolarization of the single-domain state. On the contrary, the electromechanical properties of [111]_c-poled crystal decrease quickly with the aging time due to the growth and combination of micro-domains. The temperature-dependent electromechanical properties indicate that the [111]_c-poled multi-domain crystal is more stable than [001]_c-poled single-domain crystal. In addition, the second poling can effectively enhance the piezoelectric constant d₃₃ of the [111]_c-oriented multi-domain crystals from 1032 pC/N after the first poling to 1247 pC/N.     

Phase equilibria in the system “CaAl<Subscript>2</Subscript>Si<Subscript>3</Subscript>O<Subscript>10</Subscript>”-Na<Subscript>2</Subscript>Al<Subscript>2</Subscript>Si<Subscript>3</Subscript>O<Subscript>10</Subscript>-H<Subscript>2</Subscript>O

The phase equilibria in the “CaAl₂Si₃O₁₀”-Na₂Al₂Si₃O₁₀-H₂O system are analyzed using structural and thermal analysis data, and the ideal gonnardite structure is modeled. The results suggest that, to ensure a better correlation with the structures of the zeolites in this series, a new structural model of the gonnardite-based solid solution must be selected, with the structure rotated through 45° about the c axis in the ab plane.     

Phase equilibria in the Tl<Subscript>5</Subscript>Te<Subscript>3</Subscript>–Tl<Subscript>9</Subscript>BiTe<Subscript>6</Subscript>–Tl<Subscript>9</Subscript>TbTe<Subscript>6</Subscript> system

Phase equilibria in the Tl₅Te₃–Tl₉BiTe₆–Tl₉TbTe₆ system have been studied using differential thermal analysis, X-ray diffraction, and microhardness measurements. We have mapped out a number of vertical sections, the 760-K isothermal section of its phase diagram, and projections of its liquidus and solidus surfaces. The composition dependences of lattice parameters and microhardness have been obtained. The system has been shown to contain a continuous series of solid solutions, which crystallize in a tetragonal structure (Tl₅Te₃ type, sp. gr. I4/mcm).     

Effect of sintering temperatures on properties of BaO–B<Subscript>2</Subscript>O<Subscript>3</Subscript>–SiO<Subscript>2</Subscript>–Al<Subscript>2</Subscript>O<Subscript>3</Subscript> glass/silica composites for CBGA package

BaO–B₂O₃–SiO₂–Al₂O₃ (BBSA) glass/silica composites synthesized by solid-state reaction method were developed for CBGA packages, and the effects of sintering temperature (900–950 °C) on the phase transformation, microstructure, thermal, mechanical and electrical properties were investigated. XRD results show that the major phases quartz and cristobalite, and the minor phase BaSi₂O₅ are detected in BBSA composites. Furthermore, it was found that the quartz phase transforms to cristobalite phase at 930–940 °C. The formation of cristobalite phase with higher coefficient of thermal expansion (CTE) led to the increase of CTE value of BBSA composites. However, excessive cristobalite phase content would degrade the mechanical properties and the linearity of thermal expansion of the ceramics. BBSA composites sintered at 920 °C exhibited excellent properties: low dielectric constant and loss (ε_r = 6.2, tanδ = 10^?4 at 1 MHz), high bending strength (179 MPa), high CTE (12.19 ppm/°C) as well as superior linearity of the thermal expansion.     

Enhanced microwave dielectric properties of Ba<Subscript>0.40</Subscript>Sr<Subscript>0.60</Subscript>TiO<Subscript>3</Subscript>–Zr<Subscript>0.80</Subscript>Sn<Subscript>0.20</Subscript>TiO<Subscript>4</Subscript> composite ceramics

The (1−x) Ba_0.40Sr_0.60TiO₃ (BST)−xZr_0.80Sn_0.20TiO₄ (ZST) composite ceramics with x = 10, 20, 30, and 40 wt% were fabricated by conventional solid-state reaction method. With increasing of ZST content, the dielectric constant of composite ceramics was decreased and dielectric loss increases. The effect of ZnO addition to 70 wt% BST–30 wt% ZST composition on the microstructure and dielectric properties was investigated. The improvements in dielectric constant, dielectric loss, and microwave dielectric properties of composite ceramics can be achieved by ZnO addition. The sample with 98 wt% (70 wt% BST–30 wt% ZST)–2 wt%ZnO composition exhibits promising dielectric properties, with dielectric constant, loss tangent and tunability at 4 kV/mm, of 125, 0.0016 and 12%, at 10 kHz and room temperature. At ~2 GHz, it possesses a dielectric constant of 101 and a Q factor of 187, which makes it a good candidate for tunable microwave device applications.     

Investigation of solid solution of ZrP<Subscript>2</Subscript>O<Subscript>7</Subscript>–Sr<Subscript>2</Subscript>P<Subscript>2</Subscript>O<Subscript>7</Subscript>

In this study, ZrP₂O₇ was synthesized by the solid state reaction of ZrO₂ and NH₄H₂PO₄ at 900 °C. Then, in set 1; 10, 5, 1, 0.5, 0.1, 0.05, 0.03% previously prepared Sr₂P₂O₇ were doped into ZrP₂O₇, and Sr₂P₂O₇ slightly affect the unit cell parameter of cubic ZrP₂O₇ (a = 8.248(6)–8.233(8) Å). The reverse of this process was also applied to Sr₂P₂O₇ system (set 2). ZrP₂O₇ changes the unit cell parameters of orthorhombic Sr₂P₂O₇ in between a = 8.909(5)–8.877(5) Å, b = 13.163(3)–13.12(1) Å, and c = 5.403(2)–5.386(4) Å. Analysis of the vibrations of the P₂O ₇ ^4? ion and approximate band assignments for IR and Raman spectra are also reported in this work. Some coincidences in infrared and Raman spectra both sets were found and strong P–O–P bands were observed. Surface morphology, EDX analysis, and thermoluminescence properties of both sets were given the first time in this paper.     

Comment on ‘Resistivity Minimum Behavior and Weak Magnetic Disorder Characteristics in La<Subscript>2/3</Subscript>Ca<Subscript>1/3</Subscript>MnO<Subscript>3</Subscript> Manganites’

In a recent paper (Chen et al. in J. Supercond. Nov. Magn. 22:465, 2009) Zhenping Chen et al. reported measurements of the electrical resistivity (ρ) and magnetization versus temperature (T) and magnetic field (H) on polycrystalline manganite compound La_2/3Ca_1/3MnO₃. In particular, the ρ(T) dependence shows a shallow minimum at T _min∼20 K. Application of the external H up to 8 T leads to marked flattening of such minimum and to notable lowering of the T _min on ρ(T,H) curves. The authors attributed this low-temperature anomaly to competitive quantum Kondo effect and three-dimensional electron–electron interaction, using the results of numerical fittings of ρ versus T and H dependences in the interval of about 5–30 K. It is suggested in the comment that such a claim seems to be doubtful due to the fundamental inapplicability of this approach for analysis of low-temperature conductivity in polycrystalline manganites. It is noted that a natural cause for both the low-temperature minimum on ρ(T) curve and its evolution upon magnetic field application, is the well-known grain boundary effect. The numerous uncertainties and obscurities are also characteristic for the paper being commented upon.     

System ZnO ⋅ B<Subscript>2</Subscript>O<Subscript>3</Subscript>-CuO ⋅ B<Subscript>2</Subscript>O<Subscript>3</Subscript>

Differential thermal analysis and x-ray diffraction data indicate that the ZnO B₂O₃-CuO B₂O₃ join of the ternary system CuO-B₂O₃-ZnO is pseudobinary, with eutectic phase relations and a liquid-liquid miscibility gap in the composition range 25–35 mol % CuO.Translated from Neorganicheskie Materialy, Vol. 41, No. 3, 2005, pp. 339–340.Original Russian Text Copyright © 2005 by Kasumova, Bananyarly.This revised version was published online in April 2005 with a corrected cover date.This revised version was published online in April 2005 with a corrected cover date.     

Structural and electrical properties of Ho<Superscript>3+</Superscript>-modified Pb(Zn<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript>–9PbTiO<Subscript>3</Subscript> single crystals

Ho³⁺-modified Pb(Zn_1/3Nb_2/3)O₃–9PbTiO₃ (PZN–9PT) single crystals were grown through a flux method. Phase structure and microstructural morphology of the as-grown single crystals were performed by X-ray diffraction analysis and scanning electron microscopy. The refinement of the lattice parameters were obtained by the Rietveld method. The electrical properties of PZN–9PT single crystals were improved significantly by the modification of Ho³⁺ ions. The rhombohedral–tetragonal phase transition temperature, Curie temperature, coercive field at 15 kV cm^?1, and remnant polarization of Ho³⁺-modified PZN–9PT single crystals were increased by 14, 42 K, 2.4 kV cm^?1, and 7.5 μC cm^?2, respectively (i.e., 375.45, 448.45 K, 5.9 kV cm^?1, and 38.40 μC cm^?2, respectively). Furthermore, Lorentz-type law was used to describe the dielectric relaxor behavior of the as-grown single crystals.     

Free-standing TiO<Subscript>2</Subscript>–SiO<Subscript>2</Subscript>/PANI composite nanofibers for ammonia sensors

Free-standing TiO₂–SiO₂/polyaniline (TS/PANI) composite nanofibers were prepared by electrospinning, in situ polymerization and calcination method. The effect of tetra-n-butyl titanate (TBT) in the electrospinning solution on the morphology and the ammonia sensing properties of TS/PANI composite nanofibers were investigated. The obtained nanofibers were characterized by scanning electron microscope, Fourier transform infrared spectroscopy, X-ray diffraction, transmission electron microscopy, thermo-gravimetric analysis and gas sensor test system. It is proved that too much TBT in the solution would make the fibrous morphology and ammonia sensing properties worse. Gas sensing tests showed that the TS/PANI composite nanofibers ammonia sensor can work at room temperature and possess ideal response values, selectivity and repeatability. With the increase in TiO₂ content in the TS nanofibers, the ammonia sensing properties were improved because of the increase in P–N heterojunctions formed between TiO₂ and PANI in the sensors.