爆炸辅助气相沉积法制备富勒烯的研究

通过双釜爆炸装置,将爆炸后产生的高温气相碳簇快速转移到温度相对比较低的环境中沉积,成功地制备了C60富勒烯.富勒烯的形成与沉积温度密切相关,当沉积温度为0℃时,紫外光谱以及飞行时间质谱检测表明,产物的甲笨抽提物中生成了C60富勒烯.与其它制备方法相比,本体系的气氛更为复杂,包含H、O、N等元素,此条件下富勒烯的成功制备为深入理解富勒烯的生长机理提供了有用的信息.实验范围内,当沉积温度为450℃、150℃以及-78.5℃时,产物的抽提物中都没有发现富勒烯生成,可能是由于碳簇退火沉积速率太慢或太快造成.     

催化剂辅助化学气相沉积法制备InN纳米线

采用催化剂辅助化学气相沉积法,通过固-液-气(V-L-S)机理控制在硅衬底上制备了高质量的InN纳米线。利用FESEM、XRD、HRTEM对制备的InN纳米线的表面形貌和结构进行了表征。分析表明合成的InN纳米线为标准的六方纤锌矿结构,纳米线沿[102]方向生长。室温PL光谱表明,制备的InN纳米线在1580nm(0.78eV)处存在很强的无缺陷的带边发射,与六方纤锌矿结构InN单晶发射峰位置一致,表现出良好的光电性能。     

催化剂辅助化学气相沉积法制备InN纳米线

采用催化剂辅助化学气相沉积法,通过固-液-气（V-L-S）机理控制在硅衬底上制备了高质量的InN纳米线。利用FESEM、XRD、HRTEM对制备的InN纳米线的表面形貌和结构进行了表征。分析表明合成的InN纳米线为标准的六方纤锌矿结构,纳米线沿[102]方向生长。室温PL光谱表明,制备的InN纳米线在1580rlIn（...     

爆炸辅助气相沉积法合成介孔氮杂碳纳米颗粒

以吡咯作为原料,采用爆炸辅助的化学气相沉积法,成功地合成了氮杂介孔碳纳米颗粒.颗粒尺寸为30～70hm,含有直径为2～4nm的介孔,氮掺杂量为8.81%(at).在此过程中,爆炸反应产生的热能将吡咯分解成碳氮原子簇,这些原子簇在动力学驱动下组装成纳米颗粒.爆炸产生的高能氧化性气体与颗粒上缺陷处的碳原子反应形成孔,体系独特的高温环境有利于对碳纳米颗粒进行有效的结构性氮掺杂,并形成较好的晶化结构.     

化学气相沉积法制备SiC纳米线的研究进展

SiC纳米线具有优良的物理、化学、电学和光学等性能,在光电器件、光催化降解、能量存储和结构陶瓷等方面得到广泛应用.其制备方法多种多样,其中化学气相沉积法(CVD)制备SiC纳米线因具有工艺简单、组成可控和重复性好等优点而备受关注.近年来,在化学气相沉积法制备SiC纳米线以及调控其显微结构方面取得了较多成果.采用Si粉、石墨粉和树脂粉等低成本原料以及流化床等先进设备,通过化学气相沉积法制备出线状、链珠状、竹节状、螺旋状以及核壳结构等不同尺度、形貌各异的SiC纳米线,并且有的SiC纳米线具有优良的发光性能、场发射性能和吸波性能等,为制备新型结构和形貌的SiC纳米线及开发新功能性的SiC纳米器件提供了重要参考.目前,未添加催化剂时,利用气相沉积法制备的SiC纳米线虽然纯度较高,但存在产物形貌、尺度和结晶方向等可控性差,制备温度较高和产率相对较低的问题.而添加催化剂、熔盐以及氧化物辅助可明显降低SiC纳米线的制备温度,提高反应速率以及产率,但易在SiC纳米线中引入杂质.将来应在提高SiC纳米线的纯度、去除杂质方面开展深入研究;还应注重低成本、规模化制备SiC纳米线的研究,采用相应措施调控SiC纳米线的显微结构,以拓宽SiC纳米线的应用领域.本文综述了目前国内外采用化学气相沉积制备SiC纳米线的方法,分析总结了无催化剂、催化剂、熔盐以及氧化物辅助等各种制备方法的优缺点,并对未来的研究进行展望,期望为SiC纳米线的低成本、规模化制备和应用提供理论依据.     

ZnO纳米线的气相沉积法自催化生长及发光性能研究

介绍了一种通过气相沉积法自催化生长氧化锌纳米线的方法。氧化锌纳米线的生长方向为〈001〉,其尺寸随反应温度的升高而增大。光致发光分析表明绿光发射强度随氧化锌纳米线尺寸而变化。当氧化锌纳米线直径小至5～10nm时,由于量子效应而表现出非常强的绿光发射。     

化学气相沉积法制备硼掺杂玻璃炭材料(英文)

以甲烷和三氯化硼的混合气为反应气体,采用化学气相沉积法制备硼掺杂玻璃炭材料。利用X射线衍射仪、拉曼光谱仪、扫描和透射电子显微电镜对沉积产物的微观结构进行表征。结果表明,沉积产物是一种玻璃炭材料,但在其基体中均匀分布着约20 nm的碳化硼颗粒。由于硼元素强烈的催化石墨化作用,硼掺杂玻璃炭表现出完全不同于传统玻璃炭材料的石墨化行为。硼掺杂玻璃炭经高温热处理后,其结构发生剧烈变化而转变为片层炭结构,其转变过程可能遵循固溶-析出机制。     

气相沉积法制备Co掺杂ZnO纳米线的磁学性能研究

研究了气相沉积方法制备的Co掺杂ZnO纳米线的结构及其磁学性能。结果表明，Co离子代替Zn离子的位置进入ZnO晶格，样品的磁性能对实验条件的依赖性比较大，通入适量空气的条件下制备的样品具有室温铁磁性。     

化学液气相渗透致密快速制备炭/炭复合材料

探索了一种的炭/炭制备方法-快速化学液气相渗透致密(CLVD),沉积时间3h内可获得密度达1.74g/cm3的炭/炭材料.预制体为环形炭毡制件(160mm×80mm×10mm),以液态低分子有机物(CYH和KEE)作炭源前躯体,将预制体浸泡在液体炭源前驱体中,利用辐射加热,在预制体范围内造成由内而外的温度梯度.研究表明,在900℃～1100℃沉积温度范围内,炭纤维表面最大沉积速率为64μm/h,比等温CVI的沉积速率 (0.1μm/h～0.25μm/h)快2个数量级以上.同时,分析并提出了该方法快速致密多孔预制体的机理.     

化学气相沉积低温热解炭的微观组织结构与沉积模型

利用扫描电子显微镜(SEM),透射电子显微镜(TEM)结合选取电子衍射(SAED)研究了化学气相沉积低温热解炭的微观组织结构。结果表明:低温热解炭是由直径小于2μm的球形颗粒状炭组成,该球形颗粒状炭的核心是炭黑颗粒,外层为中织构热解炭。其沉积过程主要经历了:微小炭黑颗粒的萌生,炭黑颗粒外层的生长,炭颗粒表面热解炭的沉积和炭颗粒的聚集长大四个过程。     

热化学气相沉积法在硅纳米丝上合成碳纳米管

利用热化学气相沉积法在负载不同厚度催化剂的硅纳米丝(SiNW)表面生长碳纳米管(CNTs),探讨了生长条件对所合成SiNW-CNT的结构和场发射特性的影响.这种类似树状的三维结构具有较高碳纳米管表面密度及降低的电场筛除效应等潜在优势.使用拉曼光谱( Raman)、电子显微镜(SEM)、透射电子显微镜(TEM)、能量扩散分光仪(EDS)分析了碳纳米管的结构性质,并在高真空下施加电场测得碳纳米管的场发射特性.结果表明:随硅纳米丝上负载催化剂镍膜厚度的变化,所合成碳纳米管的表面特性、结晶结构及功函数改变,导致电子发射难易程度的改变,进一步影响碳纳米管的场发射特性.     

Synthesis of silicon carbide nanowires by solid phase source chemical vapor deposition

In this paper, we report a simple approach to synthesize silicon carbide (SiC) nanowires by solid phase source chemical vapor deposition (CVD) at relatively low temperatures. 3C-SiC nanowires covered by an amorphous shell were obtained on a thin film which was first deposited on silicon substrates, and the nanowires are 20–80 nm in diameter and several μm in length, with a growth direction of [200]. The growth of the nanowires agrees well on vapor-liquid-solid (VLS) process and the film deposited on the substrates plays an important role in the formation of nanowires.     

Hot-wire chemical vapor deposition of carbon nanotubes

Hot-wire chemical vapor deposition (HWCVD) has been employed for the continuous gas-phase generation of both carbon multi-wall and single-wall nanotube (MWNT and SWNT) materials. Graphitic MWNTs were produced at a very high density at a synthesis temperature of 600 °C. SWNTs were deposited at a much lower density on a glass substrate held at 450 °C. SWNTs are typically observed in large bundles that are stabilized by tube–tube van der Waals’ interactions. However, transmission electron microscopy analyses revealed only the presence of isolated SWNTs in these HWCVD-generated materials.     

Growth control of carbon nanotubes by plasma enhanced chemical vapor deposition

Plasma enhanced chemical vapor deposition (PECVD), which enables growth of vertically aligned carbon nanotubes (CNTs) directly onto a solid substrate, is considered to be a suitable method for preparing CNTs for nanoelectronics applications such as electron sources for field emission displays (FEDs). For these purposes, establishment of an efficient CNT growth process has been required. We have examined growth characteristics of CNTs using a radio frequency PECVD (RF-PECVD) method with the intention to develop a high efficiency process for CNT growth at a low enough temperature suitable for nanoelectronics applications. Here we report an effect of pretreatment of the catalyst thin film that plays an important role in CNT growth using RF-PECVD. Results of this study show that uniform formation of fine catalyst nanoparticles on the substrate is important for the efficient CNT growth.     

Laterally organized carbon nanotube arrays based on hot-filament chemical vapor deposition

Lateral porous anodic alumina (PAA) templates were used to organize carbon nanotubes (CNTs) grown by a hot-filament assisted chemical vapor deposition (HFCVD) process. For the CNT growth, we used a modified “home-made” HFCVD system with two independently powered filaments which are fitted respectively on the methane (CH₄) gas line, which serves as a carbon precursor and on the hydrogen (H₂) gas line, which acts as an etching agent for the parasitic amorphous carbon. Various activation powers of the hot filaments were used to directly or indirectly decompose the gas mixtures at relatively low substrate temperatures. A parametric study of the HFCVD process has been carried out for optimizing the confined CNTs growth inside the lateral PAA templates.     

化学气相沉积法制备多壁碳纳米管

以带程序升温装置的管式电阻炉为实验装置,采用化学气相沉积法,在一定的工艺条件下裂解二茂铁与双鸭山精煤的混合物制备出多壁碳纳米管.采用透射电镜、Raman光谱以及X射线衍射技术对碳纳米管产物进行表征,同时研究了碳纳米管的生长机理.     

Structure control of carbon nanotubes using radio-frequency plasma enhanced chemical vapor deposition

Carbon nanotube structures such as tube diameter, growth site, and formation density are controlled using radio-frequency (RF, 13.56 MHz) plasma enhanced chemical vapor deposition (RF-PECVD) method. We have produced uniformly well-aligned multi-walled carbon nanotubes (MWNTs) grown over the large scale area and linearly arrayed MWNTs grown in a selected area without any highly-sophisticated patterning process. In our RF-PECVD experiment, furthermore, individually grown single-walled carbon nanotubes (SWNTs) or their thin bundles are synthesized for the first time within the scope of the PECVD methods. These results indicate that PECVD method provides the high potential for the further development of nano-technology.     

Growth of well-aligned carbon nanotubes by RF-DC plasma chemical vapor deposition

Highly aligned carbon nanotubes (CNTs) were grown under high sheath electric field and gas pressure conditions by the radio frequency (RF) plasma-enhanced direct current (DC) plasma chemical vapor deposition (CVD) method due to a stabilized DC discharge. The uniform growth of highly aligned multi-walled CNTs was achieved over the entire surface area of a 50 × 50 mm² iron foil. The growth of multi-walled CNTs on a 75 × 75 mm² iron foil was also confirmed.     

Hydrogenated amorphous carbon and carbon nitride films deposited at low pressure by plasma enhanced chemical vapor deposition

Hydrogenated amorphous carbon (a-C:H) films were deposited by plasma enhanced chemical vapor deposition from methane, argon diluted methane, and nitrogen diluted methane at 26.7 Pa with a 13.56 MHz RF power supply. In this pressure regime, multiple-scattering of carbon species within the plasma phase is expected during the transport to the substrates placed on both the driven and the earthed electrodes. These films were analyzed using UV-VIS optical transmittance, monochromatic ellipsometry, Raman spectroscopy and current-voltage measurements. From these results, the effect of the plasma conditions and the effective flux of the carbon species controlled by the input power through the negative self bias are found to be important in the deposition process. The growth conditions at the higher pressure regime are important to synthesize a-C:H films from low energetic carbon species, since it reduces the defect density and improves the quality of the films. Furthermore, the effect of nitrogen on the growth conditions of a-C:H:N films is observed.