Electron field emission from filtered arc deposited diamond-like carbon films using Au and Ti layers

In this work, tetrahedral diamond-like carbon (DLC) films are deposited on Si, Ti/Si and Au/Si substrates by a new plasma deposition technique — filtered arc deposition (FAD). Their electron field emission characteristics and fluorescent displays of the films are tested using a diode structure. It is shown that the substrate can markedly influence the emission behavior of DLC films. An emission current of 0.1 μA is detected at electric field E_DLC/Si=5.6 V/μm, E_DLC/Au/Si=14.3 V/μm, and E_DLC/Ti/Si=5.2 V/μm, respectively. At 14.3 V/μm, an emission current density J_DLC/Si=15.2 μA/cm², J_DLC/Au/Si=0.4 μA/cm², and J_DLC/Ti/Si=175 μA/cm² is achieved, respectively. It is believed that a thin TiC transition layer exists in the interface between the DLC film and Ti/Si substrate.     

Influence of nitrogen plasma post-treatment on diamond-like carbon films synthesized by RF plasma enhanced chemical vapor deposition

DLC films were synthesized by RF plasma enhanced chemical vapor deposition and the effects of nitrogen plasma post-treatment at different pressures on the structure and properties of DLC films were investigated. Higher roughness was obtained after plasma post-treatment at higher pressures (0.3 and 0.9 torr) and plasma post-treatment at a lower pressure (0.15 torr) resulted in lower roughness than that of original films. The hardness of DLC films decreased with the decrease of post-treatment pressure, which is consistent with the Raman results of I_D/I_G ratio and G peak position. Compared to the original DLC film, the residual stress after plasma post-treatment decreased slightly due to the relatively thin region involved in the plasma post-treatment.     

Early stage of diamond growth at low temperature

We investigate the first stages of nanocrystalline diamond (NCD) thin film growth at low substrate temperature. NCD films were grown on silicon substrates by microwave plasma enhanced chemical vapor deposition (CVD) for 0–300 min at a temperature of 410 °C. Si substrates were ultrasonically seeded in suspension of detonation nanocrystalline diamond powder. The seeding density approached values up to 1 ⁎ 10¹² cm^− 2, which allows growth of ultra-thin fully closed layers. Stagnation of the AFM roughness indicates that the low temperature NCD growth is a) delayed due to the surface contamination of the used nanodiamond powder and b) possibly dominated by the growth in the lateral direction. XPS measurements showed that the measured surface exhibits changes from a multi-phase composite (seeding layer) to single-phase one (NCD layer).     

Effect of oxygen plasma treatment on non-thrombogenicity of diamond-like carbon films

The non-thrombogenicity of oxygen-plasma-treated DLC films was investigated as surface coatings for medical devices. DLC films were deposited on polycarbonate substrates by a radio frequency plasma enhanced chemical vapor deposition method using acetylene gas. The deposited DLC films were then treated with plasma of oxygen gas at powers of 15 W, 50 W, and 200 W. Wettability was evaluated by water contact angle measurements and the changes in surface chemistry and roughness were examined by X-ray photoelectron spectroscopy and atomic force microscope analysis, respectively. Each oxygen-plasma-treated DLC film exhibited a hydrophilic nature with water contact angles of 11.1°, 17.7° and 36.8°. The non-thrombogenicity of the samples was evaluated through the incubation with platelet-rich plasma isolated from human whole blood. Non-thrombogenic properties dramatically improved for both 15 W- and 50 W-oxygen-plasma-treated DLC films. These results demonstrate that the oxygen plasma treatment at lower powers promotes the non-thrombogenicity of DLC films with highly hydrophilic surfaces.     

Preparation of diamond like carbon thin films above room temperature and their properties

Diamond like carbon (DLC) thin films were deposited on p-type silicon (p-Si), quartz and ITO substrates by microwave (MW) surface-wave plasma (SWP) chemical vapor deposition (CVD) at different substrate temperatures (RT ∼ 300 °C). Argon (Ar: 200 sccm) was used as carrier gas while acetylene (C₂H₂: 20 sccm) and nitrogen (N: 5 sccm) were used as plasma source. Analytical methods such as X-ray photoelectron spectroscopy (XPS), FT-IR and UV–visible spectroscopy were employed to investigate the structural and optical properties of the DLC thin films respectively. FT-IR spectra show the structural modification of the DLC thin films with substrate temperatures showing the distinct peak around 3350 cm^− 1 wave number; which may corresponds to the sp² C–H bond. Tauc optical gap and film thickness both decreased with increasing substrate temperature. The peaks of XPS core level C 1 s spectra of the DLC thin films shifted towards lower binding energy with substrate temperature. We also got the small photoconductivity action of the film deposited at 300 °C on ITO substrate.     

Growth and properties of hydrogen-free DLC films deposited by surface-wave-sustained plasma

Hydrogen-free diamond-like carbon (DLC) films were deposited by a new surface-wave-sustained plasma physical vapor deposition (SWP-PVD) system in various conditions. Electron density was measured by a Langmuir probe; the film thickness and hardness were characterized using a surface profilometer and a nanoindenter, respectively. Surface morphology was investigated using an atomic force microscope (AFM). It is found that the electron density and deposition rate increase following the increase in microwave power, target voltage, or gas pressure. The typical electron density and deposition rate are about 1.87 × 10¹¹–2.04 × 10¹² cm^− 3 and 1.61–14.32 nm/min respectively. AFM images indicate that the grain sizes of the films change as the experimental parameters vary. The optical constants, refractive index n and extinction coefficient k, were obtained using an optical ellipsometry. With the increase in microwave power from 150 to 270 W, the extinction coefficient of DLC films increases from 0.05 to 0.27 while the refractive index decreases from 2.31 to 2.11.     

Synthesis and mechanical properties of carbon nanotube/diamond-like carbon composite films

Diamond-like carbon (DLC) coatings were successfully deposited on carbon nanotube (CNT) films with CNT densities of 1 × 10⁹/cm², 3 × 10⁹/cm², and 7 × 10⁹/cm² by a radio frequency plasma-enhanced chemical vapor deposition (CVD). The new composite films consisting of CNT/DLC were synthesized to improve the mechanical properties of DLC coatings especially for toughness. To compare those of the CNT/DLC composite films, the deposition of a DLC coating on a silicon oxide substrate was also carried out. A dynamic ultra micro hardness tester and a ball-on-disk type friction tester were used to investigate the mechanical properties of the CNT/DLC composite films. A scanning electron microscopic (SEM) image of the indentation region of the CNT/DLC composite film showed a triangle shape of the indenter, however, chippings of the DLC coating were observed in the indentation region. This result suggests the improvement of the toughness of the CNT/DLC composite films. The elastic modulus and dynamic hardness of the CNT/DLC composite films decreased linearly with the increase of their CNT density. Friction coefficients of all the CNT/DLC composite films were close to that of the DLC coating.     

Localized DLC etching by a non-thermal atmospheric-pressure helium plasma jet in ambient air

Using a versatile atmospheric-pressure helium plasma jet, diamond-like carbon (DLC) films were etched in ambient air. We observed that the DLC films are etched at a nominal rate of around 60 nm/min in the treated area (230 μm in diameter) during a 20-min exposure. The etching rate increased after the initial 10-min exposure. During this period, the flat DLC surface was structurally modified to produce carbon nanostructures with a density of ~ 2.4 × 10¹¹ cm^− 2. With this increase in surface area, the etching rate increased. After 20 min, the DLC film had a circular pattern etched into it down to the substrate where silicon nanostructures were observed with sizes varying from 10 nm to 1 μm. The initial carbon nanostructure formation is believed to involve selective removal of the sp²-bonded carbon domains. The carbon etching results from the formation of reactive oxygen species in the plasma.     

Low temperature growth mechanisms of vertically aligned carbon nanofibers and nanotubes by radio frequency-plasma enhanced chemical vapor deposition

Using radio frequency-plasma enhanced chemical vapor deposition (RF-PECVD), carbon nanofibers (CNFs) and carbon nanotubes (CNTs) were synthesized at low temperature. Base growth vertical turbostratic CNFs were grown using a sputtered 8 nm Ni thin film catalyst on Si substrates at 140 °C. Tip growth vertical platelet nanofibers were grown using a Ni nanocatalyst in 8 nm Ni films on TiN/Si at 180 °C. Using a Ni catalyst on glass substrate at 180 °C a transformation of the structure from CNFs to CNTs was observed. By adding hydrogen, tip growth vertical multi-walled carbon nanotubes were produced at 180 °C using FeNi nanocatalyst in 8 nm FeNi films on glass substrates. Compared to the most widely used thermal CVD method, in which the synthesis temperature was 400–850 °C, RF-PECVD had a huge advantage in low temperature growth and control of other deposition parameters. Despite significant progress in CNT synthesis by PECVD, the low temperature growth mechanisms are not clearly understood. Here, low temperature growth mechanisms of CNFs and CNTs in RF-PECVD are discussed based on plasma physics and chemistry, catalyst, substrate characteristics, temperature, and type of gas.     

Photoconductivity of DLC film deposited by pulsed discharge plasma CVD

DLC films were deposited by a new pulsed DC discharge plasma chemical vapour deposition (CVD) using hydrogen and methane gas mixture. When methane concentration (Cm) i.e. CH₄/(H₂ + CH₄) was increased from 3 to 40%, the graphitization of the carbon film increases as evident from Raman study. When Cm was increased to 30%, DLC film shows photoconducting property. The white light photoconductivity (S = I_l/I_d, where I_l is light current and I_d is dark current) measured with solar simulator under AM 1.5 condition was approximately 20 at room temperature. The photoconductivity was not clear when Cm was lower than 20%. ESR measurements also show that the electron spin density was slightly decreased with decreasing concentration of methane. Thus we can conclude here that at higher concentrations of methane at 30%, Sp² content of the film increases and the DLC film becomes photoconducting.     

Diamond synthesis by plasma chemical vapor deposition in liquid and gas

The characteristics of diamond synthesis by 2.45 GHz microwave plasma chemical vapor deposition (CVD) under pressures greater than atmospheric pressure were investigated. The deposits on Si substrates were identified by scanning electron microscopy and Raman spectroscopy. The growth rate of diamond was found to be 250 μm/h at 300 kPa, which is ten times greater than that of the conventional low-pressure CVD method. In order to make high-speed deposition of diamond effective, the diamond growth rates for gas-phase microwave plasma CVD were compared to those from the in-liquid plasma CVD method. The growth rate was found to increase as system pressure increased, displaying the same tendency of that in-liquid plasma CVD. The amounts of input microwave energy per unit volume of diamond in the gas-phase and in-liquid plasma CVD methods were also compared. The amount of input microwave energy per unit volume of diamond was found to be 0.6 to 1 kWh/mm³.     

High surface area diamond-like carbon electrodes grown on vertically aligned carbon nanotubes

Electrochemically active diamond-like carbon (DLC) electrodes featuring high specific surface area have been prepared by plasma-enhanced chemical vapour deposition (CVD) onto densely packed forests of vertically aligned multiwall carbon nanotubes (VACNTs). The DLC:VACNT composite film exhibits a complex topography with web like features and ridges generated by partial coalescence of the DLC over the CNT arrays. DLC:VACNT electrodes exhibit low background responses over a large potential window, low uncompensated resistance, as well as low charge-transfer impedance in the presence of ferrocyanide as a redox probe. The interfacial capacitance associated with the DLC:VACNT electrode is in the range of 0.6 mF cm⁻², a value two orders of magnitude larger than in conventional flat carbon electrodes. DLC films grown onto single-crystal Si(1 0 0) under identical conditions resulted in essentially insulating layers. Conducting-atomic force microscopy studies reveal that the film electro-activity does not arise from specific topographic features in the highly corrugated film. The ensemble of experimental results suggests that the enhanced electrochemical responses are not connected to areas in which the CNT support is exposed to the electrolyte solution. This is remarkable behaviour considering that no dopants have been included during the DLC film growth.     

A roll-to-roll microwave plasma chemical vapor deposition process for the production of 294 mm width graphene films at low temperature

Roll-to-roll microwave plasma chemical vapor deposition (CVD) has been used for the continuous deposition of graphene films for industrial mass production. Using surface wave plasma, a pair of roll-to-roll winder and unwinder system has been built into a CVD apparatus, which has a deposition area of 294 mm × 480 mm. A graphene film was deposited onto the Cu film with 294 mm width under CH₄/Ar/H₂ plasma below 400 °C. It was found from cross-sectional transmission electron microscopy that few layer graphene, had been produced which consists of flakes with a nanometer size. After transferring the film onto a polyethylene terephthalate film, a uniform graphene film with high optical transmittance was confirmed.     

Silicon-On-Diamond layer integration by wafer bonding technology

In this study, Silicon-On-Diamond (SOD) micro-structures have been fabricated using either Smart Cut? or bonded and Etched-Back Silicon On Insulator (BESOI) technology. Thanks to the development of an innovative smoothening process, polycrystalline diamond layers (C*) can be integrated as a buried oxide layer offering new opportunities in terms of thermal management.We describe different technological process flow investigations leading to SOD by bonding C* layer in the stack. As starting material we used poly-crystalline thin diamond films in the 200 nm to 7000 nm range of thickness. The C* is deposited by Chemical Vapour Deposition assisted by Microwave Plasma (MPCVD) onto various 50 mm wafers such as Si, SOI and polycrystalline silicon carbide (pSiC). As the roughness of the diamond layer is not directly compatible with a wafer bonding integration, an innovative smoothening process in 3 steps has been developed and named “DPE” for Deposition, Planarization and Etching. Using the DPE process, the roughness of 5 µm thick diamond layer could be reduced from 50 to 3 nm RMS and down to 1.5 nm RMS for a thin 200 nm layer.In order to demonstrate the feasibility of a GaN on SOD micro-structure design for HEMT applications, layer transfers have been carried out by a bonding and thinning process from C*/Si bulk using oxide bonding layers. From thermal spreading efficiency consideration, new processes of fabrication of SOD/poly-SiC substrate are in progress involving BESOI or Si Smart Cut? technologies and poly-Si bonding layer starting from C*/poly-SiC.Pure SOD substrate were also fabricated by using C*/SOI and poly-Si bonding layer in a BESOI technology. A thin active silicon layer (70 nm) of 50 mm diameter onto a 140 nm thick diamond BOX layer has been transferred on 200 mm diameter Si substrate for future MOSFET's devices demonstrations. Significant progress has been done in diamond layer integration by wafer bonding.     

Bilayer graphene synthesis by plasma treatment of copper foils without using a carbon-containing gas

Bilayer graphene has been synthesized by using hydrogen plasma treatment of copper foils for 30 s at the temperature of 850 °C together with joule-heating treatment of the foils without using a carbon-containing gas such as methane in order to suppress the nucleation density of graphene. The effect of plasma provides active species of carbon atoms on copper substrate and a selective bilayer graphene formation of AB-stacking in a very short time. Carbon to be precipitated is delivered from the copper foil and/or the environment in the reaction chamber. The domain size of synthesized graphene, the controllability of a few layers and the electrical conductivity have been significantly improved compared with plasma chemical vapor deposition (CVD) using carbon-containing gas. The sheet resistance of bilayer graphene exhibits 951 Ω in average. The carrier mobility shows 1000 cm²/V s in maximum at room temperature. The sheet resistance of 130 ± 26 Ω has been attained after the doping by gold chloride solution.     

Duplex DLC coatings fabricated on the inner surface of a tube using plasma immersion ion implantation and deposition

A duplex plasma immersion ion implantation and deposition (PIIID) process, involving carbon ion implantation and diamond-like carbon (DLC) deposition, is proposed to modify the inner surface of a tube. In the research, samples of GCr15 bearing steel were placed inside a tube in the vacuum chamber. After the vacuum chamber was evacuated to a base pressure of 6 × 10^− 3 Pa, C₂H₂ gas was introduced into the chamber, and the tube was biased by a negative pulsed bias. Since a pulsed glow discharge (PGD) plasma can be formed by the bias, carbon ion implantation and DLC film deposition process can be obtained by biasing the tube with a high and low bias, respectively. To synthesize different DLC films, single PIIID processes employing a low voltage (several kV) PGD method and duplex PIIID processes combining the high (several tens kV) and low voltage PGD techniques were carried out. The as-synthesized films were characterized by Raman spectrum, nano-indentation, scratch, tribological and electrochemical tests. Raman results show that duplex DLC films were synthesized by this duplex PIIID process. In addition, compared with the single DLC film synthesized by the low voltage PGD process, the duplex DLC films can obtain a high wear and corrosion resistances. Furthermore, using this duplex PIIID method, batch treatment of outer-rings of the bearing was realized.     

In situ surface oxide reduction with pulsed arc discharge for maximum adhesion of diamond-like carbon coatings

With filtered pulsed arc discharge (FPAD) method it is possible to achieve very high adhesion of high quality diamond-like carbon (DLC). Here we explain this high adhesion with the oxide reduction and consequent carbide formation and ion mixing of the substrate when exposed to high temperature carbon plasma ions. The use of intensive high energy (> 2 keV) carbon plasma is the only practical method to achieve ultimate adhesion of DLC. With this unique method presented, the adhesion properties and the substrate interface electron spectroscopy for chemical analysis (ESCA) spectra of DLC coatings are independent of the pre-treatment of silicon substrates. High adhesion and proper selection of substrate enables to deposit thick DLC coatings (> 10 μm). We also show how the DLC deposition system can be improved and simplified.     

Changes in chemical bonding of diamond-like carbon films by atomic-hydrogen exposure

We have deposited unhydrogenated diamond-like carbon (DLC) films on Si substrate by pulsed laser deposition using KrF excimer laser, and investigated the effects of atomic-hydrogen exposure on the structure and chemical bonding of the DLC films by photoelectron spectroscopy (PES) using synchrotron radiation and Raman spectroscopy. The fraction of sp³ bonds at the film surface, as evaluated from C1s spectra, increased at a substrate temperature of 400 °C by atomic-hydrogen exposure, whereas the sp³ fraction decreased at 700 °C with increasing exposure time. It was found that the sp³ fraction was higher at the surfaces than the subsurfaces of the films exposed to atomic hydrogen at both the temperatures. The Raman spectrum of the film exposed to atomic hydrogen at 400 °C showed that the clustering of sp² carbon atoms progressed inside the film near the surface even at such a low temperature as 400 °C.     

Properties of DLC films deposited by an oxyacetylene flame

Diamond-like carbon (DLC) films were obtained by spinning a tungsten carbide substrate at a high speed using an oxyacetylene flame. The films deposited at a typical experimental condition of substrate temperature of 810°C, rotation of 600 rpm and 3 h deposition time, exhibited an uniform, very smooth, hard and glassy surface covering the entire exposed face of the substrate. These films were identified as DLC by their characteristic broad Raman spectra centered at 1554 cm⁻¹ and micro-Vicker's hardness >3400 kg mm⁻². For substrate temperatures <800°C the film started losing the uniform glassy surface and the hardness deteriorated. For temperatures >950°C the film was still hard and shiny, but black in color. DLC films were also obtained in a wide range of speeds of rotation (300–750 rpm), as long as the temperature remained close to 850°C.     

Pulsed laser deposition BTS thin films: The role of substrate temperature

BaSn_0.15Ti_0.85O₃ (BTS) thin films were deposited on Pt/Ti/SiO₂/Si(1 0 0) substrate by pulsed laser deposition and the effects of substrate temperature on their structure, dielectric properties and leakage current density were investigated. The results indicate that the substrate temperature has a significant effect on the structural and dielectric properties of the BTS thin films which exhibit a polycrystalline perovskite structure if the substrate temperature ranges within 550–750 °C. The dielectric constant and loss tangent of the BTS thin films deposited at 650 °C are 341 and 0.009 at 1 MHz, respectively, the tunability is 72.1% at a dc bias field of 400 kV/cm, while the largest figure of merit (FOM) is 81.1. The effect of the substrate temperature on the leakage current of the BTS thin films is discussed.