Advances in composition control for 16 µm LPE P-on-n HgCdTe heterojunction photodiodes for remote sensing applications at 60K

With good composition control in both p-type cap and n-type base LPE layers, it is possible to make barrier-free two-layer P-on-n HgCdTe heterojunction photodiodes with very long cutoff wavelengths. Diode arrays with good R_oA operability, good quantum efficiency, and low 1/f noise at 60K have been demonstrated at cutoff wavelengths to 16.3μm. The diode performance continues to improve at lower temperatures, following a diffusion-current trend to at least 35K. Measured R_oA values of 2×10⁵ ohm-cm² for an 18 μm cutoff at 35K are the highest reported at this very long wavelength. A simple defect model applied to the area dependence of R_oA at 40K implied a defect areal density of 3×10⁴ cm⁻² and a defect impedance of 3×10⁶ ohm.     

MCT infrafed detectors with close to radiatively limited performance at 240 K in the 3–5 µm band

Results are reported on infrared photodiodes which have been designed to minimize the dark diffusion currents for operating temperatures above 200 K in the MWIR (3–5 μm) waveband. It is shown that by adjusting the doping and composition profiles, the dark currents due to Auger and contact diffusion mechanisms can be controlled leading to devices which are close to being radiatively limited. The radiatively-generated current has been calculated as a function of temperature from the measured spectral response and this indicates that the radiative contribution increases from about 53% at 240 K to 65% at 300K. In addition, it is shown that these internally-generated radiative currents can be reduced using negative luminescence. This result is the first experimental verification that the internally-generated radiative mechanism can contribute to the diffusion current.     

Numerical optimization of an extracted HgCdTe IR-photodiodes for 10.6-μm spectral region operating at room temperature

The electrical and photoelectrical properties of long wavelength Hg_1−xCd_xTe structures have been optimized by using an exact numerical analysis. In this analysis we have been taking into account the degeneracy, non-parabolicty, deviation from thermodynamical equilibrium and graded interfaces. The band diagram, electrical field, carrier mobility, photoelectrical gain, responsivity, noise and detectivity have been calculated and optimized as a function of different variable such as alloy composition, doping concentration, thickness, and applied voltage to obtain optimized performance at room temperature. This numerical simulation can be used to optimize the mentioned parameters for other structures such as , operating in photodiode, or photovoltaic mode.     

320 × 240 CMOS array for the spectral range of 3–5 μm based on PtSi photodiodes

The results of research and development of a 320 × 240 platinum silicide focal plane array (FPA) for the spectral range of 3–5 μm are presented. The development is based entirely on CMOS technology. It is shown that the FPA makes it possible to adjust the photosignal accumulation time at a fixed frame rate and subtract the background constant component in the output device.     

Effective Bi–Sb Crystals for Thermoelectric Cooling at Temperatures of T ≲ 180 K

Semiconductors - Extrusion methods have become widespread in the fabrication technology of thermoelectric materials with high strength characteristics. The extrusion method of thermoelectric...     

Lossless average inductor current sensor for CMOS integrated DC–DC converters operating at high frequencies

A novel average inductor current sensing circuit integrable in CMOS technologies is presented. It is designed for DC–DC converters using buck, boost, or buck-boost topologies and operating in continuous conduction mode at high switching frequencies. The average inductor current value is used by the DC–DC controllers to increase the light load power conversion efficiency (e.g., selection of the modulation mode, selection of the dynamic width of the transistors). It can also be used to perform the constant current charging phase when charging lithium-ion batteries, or to simply detect overcurrent faults. The proposed average inductor current sensing method is based on the lossless sensing MOSFET principle widely used in monolithic CMOS integrated DC–DC converters for measuring the current flowing through the power switches. It consists of taking a sample of the current flowing through the power switches at a specific point in time during each energizing and de-energizing cycle of the inductor. By controlling precisely the point in time at which this sample is taken, the average inductor current value can be sensed directly. The circuit simulations were done with the Cadence Spectre simulator. The improvements compared to the basic sensing MOSFET principle are a lower power consumption because no high bandwidth amplifier is required, and less noise emission because the sensing MOSFET is no more switched. Additionally, the novel average inductor current sensing circuit overcomes the low bandwidth limitation previously associated with the sensing MOSFET principle, thus enabling it to be used in DC–DC converters operating at switching frequencies up to 10 MHz and above.     

Ge/Si photodiodes with embedded arrays of Ge quantum dots forthe near infrared (1.3–1.5 µm) region

A method has been devised for MBE fabrication of p-i-n photodiodes for the spectral range of 1.3–1.5 µm, based on multilayer Ge/Si heterostructures with Ge quantum dots (QDs) on a Si substrate. The sheet density of QDs is 1.2×10¹² cm^?2, and their lateral size is ～8 nm. The lowest room-temperature dark current reported hitherto for Ge/Si photodetectors is achieved (2×10^?5 A/cm² at 1 V reverse bias). A quantum efficiency of 3% at 1.3 µm wavelength is obtained.     

A 0.13-µm implementation of 5 Gb/s and 3-mW folded parallel architecture for AES algorithm

A new architecture for encrypting and decrypting the confidential data using Advanced Encryption Standard algorithm is presented in this article. This structure combines the folded structure with parallel architecture to increase the throughput. The whole architecture achieved high throughput with less power. The proposed architecture is implemented in 0.13-µm Complementary metal–oxide–semiconductor (CMOS) technology. The proposed structure is compared with different existing structures, and from the result it is proved that the proposed structure gives higher throughput and less power compared to existing works.     

P-InAsSbP/n 0-InAs/n +-InAs photodiodes for operation at moderate cooling (150–220 K)

InAs single hetero structure photodiodes were considered as alternatives to cooled CdHgTe-based detectors sensitive to radiation around 3 μm spectral region in a wide temperature range 77–300 K. Estimations of detectivity as well as p-n junction position in InAs heterostructures have been obtained via photoelectrical and AFM measurements.     

Enhancement of fluorescence emission and signal gain at 1.53 µm in Er3+/Ce3+ co-doped tellurite glass fiber

Er3+/Ce3+ co-doped tellurite glasses with composition of TeO2-GeO2-Li2O-Nb2O5 were prepared using conventional melt-quenching technique for potential applications in Er3+-doped fiber amplifier (EDFA). The absorption spectra, up-conversion spectra and 1.53 µm band fluorescence spectra of glass samples were measured. It is shown that the 1.53 µm band fluorescence emission intensity of Er3+-doped tellurite glass fiber is improved obviously with the introduction of an appropriate amount of Ce3+, which is attributed to the energy transfer (ET) from Er3+ to Ce3+. Meanwhile, the 1.53 µm band optical signal amplification is simulated based on the rate and power propagation equations, and an increment in signal gain of about 2.4 dB at 1 532 nm in the Er3+/Ce3+ co-doped tellurite glass fiber is found. The maximum signal gain reaches 29.3 dB on a 50 cm-long fiber pumped at 980 nm with power of 100 mW. The results indicate that the prepared Er3+/Ce3+ co-doped tellurite glass is a good gain medium applied for 1.53 µm broadband and high-gain EDFA.     

High-speed photodiodes for the mid-infrared spectral region 1.2–2.4 μm based on GaSb/GaInAsSb/GaAlAsSb heterostructures with a transmission band of 2–5 GHz

High-speed p-i-n photodiodes for the spectral range of 1.2–2.4 μm are fabricated for the first time based on a GaAs/GaInAsSb/GaAlAsSb heterostructure with separated sensitive-(50 μm in diameter) and contact mesas, which are connected by a bridge front contact. The use of an unconventional design for the contact mesa with a Si₃N₄ insulating sublayer 0.3 μm thick under the metal contact made it possible to lower both the intrinsic photodiode capacitance and the reverse dark currents. The photodiodes have a low intrinsic capacitance of 3–5 pF at zero bias and 0.8–1.5 pF at a reverse bias of 3.0 V. The photodiode operating speed, which is determined by the time of increasing the photoresponse pulse to a level of 0.1–0.9, is 50–100 ps. The transmission band of the photodiodes reaches 2–5 GHz. The photodiodes are characterized by low reverse dark currents I _d = 200–1500 nA with a reverse bias of U = ?(0.5–3.0) V, a high current monochromatic sensitivity of R _i = 1.10–1.15 A/W, and a detectability of D*(λ_max, 1000, 1) = 0.9 × 10¹¹ W^?1 cm Hz^1/2 at wavelengths of 2.0–2.2 μm.     

Fundamental spectra of optical functions for indium bromide in the energy range of 2–30 eV at 4.2 K

The spectra of sets of optical fundamental functions are determined for an indium-bromide crystal in the range of 0–30 eV at 4.2 K for the polarizations E ∥ a and E ∥ c. The calculations are carried out using experimental reflection spectra R(E) and several software packages. Their basic features are established.     

Barrier рBn-Structure Based on GaAsSb/AlAsSb/InAsSb for Detection of IR Radiation in the Spectral Range of 3.1–4.2 µm

Journal of Communications Technology and Electronics - In the study, a new рBn-architecture based on a GaAsSb/AlAsSb/InAsSb heterostructure of III‒V group materials with an...     

A low phase noise and low power 3–5 GHz frequency synthesizer in 0.18 µm CMOS technology

A low power frequency synthesizer for WLAN applications is proposed in this paper. The NMOS transistor-feedback voltage controlled oscillator (VCO) is designed for the purpose of decreasing phase noise. TSPC frequency divider is designed for widening the frequency range with keeping low the power consumption. The phase frequency detector (PFD) with XOR delay cell is designed to have the low blind and dead zone, also for neutralizing the charge pump (CP) output currents; the high gain operational amplifier and miller capacitors are applied to the circuit. The frequency synthesizer is simulated in 0.18 µm CMOS technology while it works at 1.8 V supply voltage. The VCO has a phase noise of −136 dBc/Hz at 1 MHz offset. It has 10.2% tuning range. With existence of a frequency divider in the frequency synthesizer loop the output frequency of the VCO can be divided into the maximum ratio of 18. It is considered that the power consumption of the frequency synthesizer is 4 mW and the chip area is 10,400 µm².     

Light emitting diodes for the spectral range λ=3.3–4.3 µm fabricated from InGaAs and InAsSbP solid solutions: Electroluminescence in the temperature range of 20–180°C (Part 2)

Light-emitting diodes (LEDs) based on p-n homo-and heterostructures with InAsSb(P) and InGaAs active layers have been designed and studied. An emission power of 0.2 (λ=4.3 µm) to 1.33 mW (λ=3.3 µm) and a conversion efficiency of 30 (InAsSbP, λ=4.3 µm) to 340 mW/(A cm²) (InAsSb/InAsSbP double heterostructure (DH), λ=4.0 µm) have been achieved. The conversion efficiency decreases with increasing current, mainly owing to the Joule heating of the p-n homojunctions. In DH LEDs, the fact that the output power tends to a constant value with increasing current is not associated with active region heating. On raising the temperature from 20 to 180°C, the emission power of the (λ=3.3 and 4.3 µm) LEDs decreases, respectively, 7-and 14-fold, to become 50 (at 1.5 A) and 7 µW (at 3 A) at 180°C.     

Selective molecular beam epitaxy growth of quantum wire–dot coupled structures with novel high index facets for InGaAs single electron transistor arrays

For the InGaAs wire–dot–wire coupled structure arrays formed by selective molecular beam epitaxy (MBE) growth method on a specially designed patterned InP substrates, applicability to high density InGaAs single electron transistor (SET) arrays were investigated from the viewpoint of reproducibility of the selective MBE growth, size controllability and integration level. Appearance of the crater-like structure becomes a problem for reproducible formation of the InGaAs quantum wire–dot coupled structure. However, such a crater structure can be removed by appropriately adjusting growth condition and pattern sizes. The InGaAs wire size, the InGaAs dot size and the lateral width of the potential barrier were found to be controlled by the growth condition and the pattern geometry and can be reduced down to decananometer range. Highly integrated SET circuits with the device density larger than 10⁹ cm⁻² appear to be realizable using the present selective MBE method.     

InGaAs/AlGaAs QWIP Heterostructures for Large-Format Focal Plane Arrays Photosensitive in the Spectral Range 3–5 μm

Photoelectric properties of different stressed InGaAs/AlGaAs heterostructures with quantum wells grown by the method of molecular beam epitaxy on GaAs substrates for mid-wavelength infrared largeformat photodetector arrays operating in the spectral range 3–5 μm have been investigated. It has been shown that the change in the composition of barrier layers leads to a significant shift of the photosensitivity spectra of such heterostructures.     

3D Modeling and Analysis of the Space–Time Correlation for 5G Millimeter Wave MIMO Channels

Wireless Personal Communications - The deployment of millimeter waves (mmW) in 5G mobile networks is considered as a challenging issue due to the lack of knowledge regarding the propagation of mmW...