On-chip sampling in CMOS integrated circuits

This paper presents a technique for precise crosstalk delay measurement based on on-chip sampling. Results obtained on a test chip fabricated in 0.7-μm CMOS technology exhibit a 100% delay increase in a long coupled line configuration     

Planariation technology for Josephson integrated circuits

Planarization technology has enabled completion of the multi-level layer structure, which is essential to the achievement of large-scale integration and high-speed operation. A new etch-back planarization technology, using 2000-molecular weight polystyrene, has been developed for Josephson integrated circuits (IC's). This technology has been applied to fabricating the multilevel layer structure in magnetic coupled gates. The results, indicated by their cross-sectional SEM photographs and measured breakdown voltages, show that excellent planarity was achieved in this structure     

Noise in interconecction lines for submicrometer CMOS integrated circuits

The growing use of high performance portable systems is the main driving force for the significant advance in the technology of VLSI-CMOS integrated circuits. This advance has been carried out through scaling the transistor and interconnection sizes. However, as the transistor's size and interconnections are getting smaller, the signal integrity is becoming a critical issue. Therefore it is required to develop noise tolerant design circuit techniques in order to enhance the noise tolerance. In addition, these techniques should have a minimum impact on the circuit performance. In this paper, the noise immunity of dynamic logical circuits as the technology scales down is analyzed by using a reliable scaling scenario, and a new noise tolerant design technique is proposed. Prototype circuits implementing the proposed technique have been designed and fabricated. A one-bit carry look-ahead adder was designed using 0.35 mm CMOS-AMS technology. The experimental results show that the design technique here presented, results in an improvement of the ANTE by a factor of 3.4X when compared with the conventional TSPC, and an improvement by a factor of 1.7X when compared with the best noise tolerant technique currently published.     

RTD/CMOS nanoelectronic circuits: thin-film InP-based resonanttunneling diodes integrated with CMOS circuits

The combination of resonant tunneling diodes (RTDs) and complementary metal-oxide-semiconductor (CMOS) silicon circuitry can offer substantial improvement in speed, power dissipation, and circuit complexity over CMOS-only circuits. We demonstrate the first integrated resonant tunneling CMOS circuit, a clocked 1-bit comparator with a device count of six, compared with 21 in a comparable all-CMOS design. A hybrid integration process is developed for InP-based RTDs which are transferred and bonded to CMOS chips. The prototype comparator shows sensitivity in excess of 10⁶ VIA, and achieves error-free performance in functionality testing. An optimized integration process, under development, can yield high-speed, low power circuits by lowering the high parasitic capacitance associated with the prototype circuit     

Selective epitaxial growth for the fabrication of CMOS integrated circuits

A process is described for the fabrication of CMOS integrated circuits which combines the epitaxial lateral overgrowth (ELO) technique with the concept of selective epitaxy. The resulting epitaxial material is shown to have a low defect density. Transistors fabricated in the selective epitaxy are shown to have characteristics which are a function of the epitaxial deposition conditions, the substrate orientation and dopant concentration, and the epitaxial layer thickness. Minimum device leakage currents were 250 pA/µm of channel width for n-channel devices fabricated in a p-well and 1.0 pA/µm for devices fabricated on p-substrates. The higher leakage currents for devices fabricated in a well are believed to be a result of the narrow vertical spacing (0.3-0.5 µm) between the n⁺source-drain regions and the n⁺substrate.     

Laser beam backside probing of CMOS integrated circuits

We have developed a new, fully integrated circuit timing analysis tool that provides measurements of electrical waveforms by direct access to the diffusion nodes through the backside of CMOS integrated circuits. The system, known as the IDS 2000, allows the device to be driven at full speed by a wide variety of testers. Utilising an actively modelocked infrared laser beam, the system can detect waveforms with ultrahigh bandwidth ( 10 GHz) from CMOS devices using stroboscopic sampling. The system has proven to be an powerful tool for design debug and failure analysis of flip chip packaged IC as well as any other packaged IC where the silicon side can be thinned and directly accessed.     

Stacked CMOS circuits integrated in laser-recrystallized silicon films

Laser-recrystallized poly-silicon films are used as a substrate for the integration of MOS transistors and CMOS circuits. Ring oscillators and frequency divider circuits up to 100 transistors operate well with a yield of about 80%. For the integration of stacked CMOS circuits already tested bulk structures are covered with a dielectric layer and a poly-silicon film which is recrystallized at low temperature. The SOI integration technique, with a maximum temperature treatment of 960°C, is employed to manufacture the second active area as a 3-D technology. After the integration process SOI and bulk CMOS transistors operate independently at two different active levels.     

Analysis of crosstalk interference in CMOS integrated circuits

The authors show how crosstalk coupling between transmission lines inside CMOS integrated circuits can provoke faulty behavior by affecting the propagation delay of the logic and analog cells. A simplified model for the evaluation of parasitic capacitive coupling effects is proposed, and the influence of crosstalk on the behavior of basic functions such as logic gates, latches, RAM memory, and analog-to-digital converters is evaluated     

Physical design of testable CMOS digital integrated circuits

A methodology for physical testability assessment and enhancement, implemented with a set of test tools, is presented. The methodology, which can improve the physical design of testable CMOS digital ICs, is supported in realistic fault-list generation and classification. Two measures of physical testability, weighted class fault coverage and fault incidence, and one measure of fault hardness are introduced. The testability is evaluated prior to fault simulation; difficult-to-detect faults are located on the layout and correlated with the physical defects which originate them; and suggestions for layout reconfiguration are provided. Several design examples are described, ascertaining the usefulness of the proposed methodology. The proposed methodology demonstrated that stuck-at test sets only partially cover the realistic faults in digital CMOS designs. Moreover, it is shown that classical fault models of arbitrary faults are insufficient to describe the realistic fault set. Simulation results have shown that the fault set strongly depends on the technology and on the layout style     

Prospects of CMOS technology for high-speed optical communication circuits

This paper describes the capabilities of deep-submicron CMOS technologies for the realization of highly integrated optical communication transceivers in the range of tens of gigabits per second. Following an overview of a CMOS process, the design of traditional and modern transceivers is presented and speed and integration issues are discussed. Next, the problem of equalization is addressed. Finally, the design of critical building blocks such as broadband amplifiers and high-speed oscillators is described and a method of estimating the jitter is introduced.     

A CMOS oscillator for radiation-hardened,low-power space electronics

This article presents the design, manufacturing and test results of an on-chip CMOS oscillator, using a ring-oscillator, VCO based architecture. The oscillator generates a configurable square waveform clock signal to be used internally or externally to the IC that integrates it, with very low area (320 transistors, 112?×?148?µm) and power overhead (975?µW). The oscillator is integrated in a mixed signal IC which has been qualified for space applications, at a commercial 250?nm process. It enables the standalone operation of the IC without external oscillator and gives the possibility to clock other components and systems. In addition, it reduces the noise interference at PCB and chip level, optimising the performance of sensitive analogue parts. It was validated by radiation tests according to ESA standards’ procedures that the oscillator's functionality and characteristics do not deteriorate with TID levels up to 1Mrad. This approach can be easily adjusted to a wide range of frequencies, while significantly reducing the cost and power budget of space qualified systems with small design effort trade-off.     

MOSFET-only switched-capacitor circuits in digital CMOS technology

Design techniques are described for the realization of precision high linearity switched-capacitor (SC) stages constructed entirely from MOS transistors. The proposed circuits use the gate-to-channel capacitance of MOSFET's for realizing all capacitors. As a result, they can be fabricated in any inexpensive basic digital CMOS technology, and the chip area occupied by the capacitors can be reduced. A number of different SC stages have been designed and fabricated using the proposed techniques. These included SC amplifiers, gain/loss stages, and data converters. Both the simulations and the experimental results obtained indicate that very high linearity (comparable to that achieved using analog fabrication processes with two poly-Si layers) can be achieved in these circuits using basic CMOS technology     

ESD protection design for CMOS RF integrated circuits using polysilicon diodes

ESD protection design for CMOS RF integrated circuits is proposed in this paper by using the stacked polysilicon diodes as the input ESD protection devices to reduce the total input capacitance and to avoid the noise coupling from the common substrate. The ESD level of the stacked polysilicon diodes on the I/O pad is restored by using the turn-on efficient power-rail ESD clamp circuit, which is constructed by substrate-triggered technique. This polysilicon diode is fully process compatible to general sub-quarter-micron CMOS processes.     

LSI processing technology for planar GaAs integrated circuits

A planar GaAs integrated circuit (IC) fabrication technology capable of LSI complexity has been developed. The circuit and fabrication approaches were chosen to satisfy LSI requirements for high yield, high density, and low power. This technology utilizes Schottky-diode FET logic (SDFL) incorporating both high-speed switching diodes and 1-µ m GaAs MESFET's. Circuits are fabricated directly on semi-insulating GaAs using multiple localized implantations. Rapid progress in the development of this technology has already led to the successful demonstration of high-speed (tau_{d} sim 100ps) low-power (∼500 µW/gate) GaAs MSI (∼60-100 gates) circuits. Extension of the current MSI technology to the LSI/VLSI domain will depend critically on device yield which will be dictated by the GaAs material properties and by the fabrication processes used. The purpose of this paper is to describe a GaAs IC process technology which combines advanced planar device and multilevel interconnect structures with several LSI compatible processes including multiple localized ion implantations, reduction photolithography, plasma etching, reactive ion etching, and ion milling.     

Multiple layers of CMOS integrated circuits using recrystallizedsilicon film

This letter presents a method to fabricate high performance three-dimensional (3-D) integrated circuits based on the conventional CMOS SOI technology. The first layer of transistors is fabricated on SOI and the second layer is fabricated on large-grain polysilicon-on-insulator (LPSOI), using oxide as the interlayer dielectric. The LPSOI film is formed by the recrystallization of amorphous silicon through metal induced lateral crystallization (MILC). The grain size obtained by the LPSOI process is much larger than the transistors and the transistor performance is similar to those fabricated on the SOI layer. Three-dimensional (3-D) CMOS inverters have been demonstrated with p-channel devices stacking over the n-channel ones     

Investigation of gate oxide breakdown in CMOS integrated circuits

Investigation of gate oxide breakdown in CMOS integrated circuits, aimed at establishing its dependence on substrate doping (type and level) and its acceleration by an electric field, has been performed in this paper. In order to do this, time-zero-dielectric-breakdown (ramp-voltage-stressed I-V) and time-dependent-dielectric-breakdown (constant-voltage-stressed I-t) tests were carried out and the gate oxide breakdown histograms and electric field acceleration factor were determined and discussed in detail.