Quantitative analysis of tungsten, oxygen and carbon concentrations in the microcrystalline silicon films deposited by hot-wire CVD

In order for hot-wire chemical vapor deposition to compete with the conventional plasma-enhanced chemical vapor deposition technique for the deposition of microcrystalline silicon, a number of key scientific problems should be cleared up. Among these points, the concentration of tungsten (nature of the filament), as well as the concentration of oxygen and carbon (elements issued when vacuum is broken between two runs), should not exceed threshold values, beyond which electronic properties of the films could be degraded, as in the case of monocrystalline silicon. Quantitative chemical analysis of these elements has been carried out using the secondary ion mass spectrometry technique through depth profiles. It has been shown that for a high effective filament surface area (S_f=27 cm²), the W content increases steadily from 5×10¹⁴ to 2×10¹⁸ atoms cm⁻³ when the filament temperature T_f increases from 1500 to 1800 °C. For a fixed T_f, the W content increases with the effective surface area S_f. Thus, considering our reactor geometry, the W content does not exceed the detection limit (5×10¹⁴ atoms cm⁻³) when T_f and S_f are limited to 1600 °C and 4 cm², respectively. For O and C elements, under deposition conditions of high dilution of silane in hydrogen (96%), O and C concentrations approaching 10²⁰ atoms cm⁻³ have been obtained. The introduction of an inner vessel inside the reactor, the addition of a load-lock chamber and a decrease in substrate temperature to 300 °C have led to a drastic decrease in these contents down to 3×10¹⁸ atoms cm⁻³, compatible with the realization of 6% efficiency HWCVD μc-Si:H solar cells.     

Doping and electrical characteristics of in-situ heavily B-doped Si1−x−yGexCy films epitaxially grown using ultraclean LPCVD

Doping and electrical characteristics of in-situ heavily B-doped Si_1−x−yGe_xC_y (0.22<x<0.6, 0<y<0.02) films epitaxially grown on Si(100) were investigated. The epitaxial growth was carried out at 550°C in a SiH₄–GeH₄–CH₃SiH₃–B₂H₆–H₂ gas mixture using an ultraclean hot-wall low-pressure chemical vapor deposition (LPCVD) system. It was found that the deposition rate increased with increasing GeH₄ partial pressure, and only at high GeH₄ partial pressure did it decrease with increasing B₂H₆ as well as CH₃SiH₃ partial pressures. With the B₂H₆ addition, the Ge and C fractions scarcely changed and the B concentration (C_B) increased proportionally. The C fraction increased proportionally with increasing CH₃SiH₃ partial pressures. These results can be explained by the modified Langmuir-type adsorption and reaction scheme. In B-doped Si_1−x−yGe_xC_y with y=0.0054 or below, the carrier concentration was nearly equal to C_B up to approximately 2×10²⁰ cm⁻³ and was saturated at approximately 5×10²⁰ cm⁻³, regardless of the Ge fraction. The B-doped Si_1−x−yGe_xC_y with high Ge and C fractions contained some electrically inactive B even at the lower C_B region. Resistivity measurements show that the existence of C in the film enhances alloy scattering. The discrepancy between the observed lattice constant and the calculated value at the higher Ge and C fraction suggests that the B and C atoms exist at the interstitial site more preferentially.     

Determining crystallization kinetic parameters of Li2O–Al2O3–SiO2 glass from derivative differential thermal analysis curves

The kinetic parameters such as crystallization activation energy, E, and the frequency factor, ν, of Li₂O–Al₂O₃–SiO₂ glass were determined by a new non-isothermal method. The method is described by the equation

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, where β is the heating rate and T_f is the inflection-point temperature of differential thermal analysis (DTA). The value of T_f is determined as the maximum peak temperature on derivative differential thermal analysis (DDTA) curves. Values of E and ν of Li₂O–Al₂O₃–SiO₂ glass were also determined by two existing non-isothermal methods, namely the Kissinger plot and the Ozawa plot, and compared with those determined by isothermal method. Values of E and ν determined by the proposed equation were 332 kJ/mol and 1.4×10¹³ s⁻¹, respectively. They are excellent agreement with the isothermal analysis results, 336 kJ/mol and 1.8×10¹³ s⁻¹, respectively. In contrast, both the Kissinger equation and the Ozawa equation give much higher values of E and ν.     

Anomalous elastic response of amorphous alloys suggesting collective motions of many atoms

The dynamic Young’s modulus, E, of amorphous (a-) Zr₆₀Cu₃₀Al₁₀ (numbers indicate at.%) alloy was measured as a function of frequency, f, with a strain amplitude, _t, of 10⁻⁶, E(10⁻⁶,f), and also as a function of _t for f near 10² Hz, E(_t,10² Hz), by means of the vibrating reed methods. The elasticity study under the passing of electric current (PEC) was carried out too. E(10⁻⁶,f) is lower than E₀ for f between 10 and 10⁴ Hz showing local minima near 5×10, 5×10² and 5×10³ Hz, which are indicative of the resonant collective motion of many atoms, where E₀ is the static Young’s modulus. E(_t,10² Hz) increases showing saturation with increasing _t. Qualitatively, the outlines of E(10⁻⁶,f) and E(_t,10² Hz) observed for a-Zr₆₀Cu₃₀Al₁₀ are similar to those reported for various a-alloys. Quantitatively, a change in E(_t,10² Hz) for a-Zr₆₀Cu₃₀Al₁₀ is smallest among that reported for various a-alloys, presumably reflecting that the crystallization volume, (ΔV/V)_x, is smallest for a-Zr₆₀Cu₃₀Al₁₀. The effective charge number, Z^*, estimated from the change in E(10⁻⁶,10² Hz) due to PEC is 3.0×10⁵, which is comparable with Z^* reported for various a-alloys. We surmise that the number of atoms in the collective motions excited near 10² Hz is similar among various a-alloys. The E(10⁻⁶,f) data suggest that the spatial sizes of the density fluctuations may show a distribution.     

D.c. properties of ZnO thin films prepared by r.f. magnetron sputtering

In the development of ZnO-based varistors the electrical properties of ZnO/Bi₂O₃ junctions and of the two individual oxides are being investigated. Following our recent work on a.c. conductivity in Al---ZnO---Al sandwich structures we currently report d.c. measurements. The structures were prepared by r.f. magnetron sputtering in an argon/oxygen mixture in the ratio 4:1. Capacitance-voltage data confirm that the Al/ZnO interface does not form a Schottky barrier and measurements of the dependence of capacitance on film thickness indicate that the relative permittivity of the films is approximately 9.7. With increasing voltage the current density changed from an ohmic to a power-law dependence with exponent n≈3. Furthermore measurements of current density as a function of reciprocal temperature showed a linear dependence above about 240 K, with a very low activation energy below this temperature consistent with a hopping process. The higher temperature results may be explained assuming a room-temperature electron concentration n₀ and space-charge-limited conductivity, dominated by traps exponentially distributed with energy E below the conduction band edge according to N = N₀exp(−E/kT_t), where k is Boltzmann's constant. Typical derived values of these parameters are: n₀ = 7.2 × 10¹⁶ m⁻³, N₀ = 1.31 × 10⁴⁵ J⁻¹ m⁻³ and T_t = 623 K. The total trap concentration and the electron mobility were estimated to be 1.13 × 10²⁵ m⁻³ and (5.7−13.1) ×10⁻³m²V⁻¹s⁻¹ respectively.     

Magnetic and electrical characterization of heavily boron-doped diamond

For a heavily boron-doped diamond (BDD) film, temperature variations of the electrical conductivity σ and magnetic susceptibility χ are reported. The room temperature σ 143 (Ω-cm)⁻¹ corresponds to a carrier concentration 10³ ppm, and its temperature variation yields an activation energy E_a 28 meV from 140 to 300 K and E_a0.88 meV from 40 to 80 K. It is argued that larger boron doping leads to lower magnitudes of E_a. The χ vs. T data (1.8–350 K) fits the Curie–Weiss law, with the concentration of paramagnetic species 120 ppm and a diamagnetic susceptibility −0.4×10⁻⁶ emu/g Oe. The results obtained from the measurements of σ and χ are discussed and compared.     

Influence of Si doping level on the Raman and IR reflectivity spectra and optical absorption spectrum of GaN

The optical absorption (hν) and Raman and Infra Red (IR) spectra of Si doped GaN layers deposited on sapphire through buffer layers have been recorded for electron concentrations from 5×10¹⁷ to 5×10¹⁹ cm⁻³. The (hν) values deduced from photothermal deflection spectroscopy (0.5–3.5 eV) and IR absorption (0.15–0.5 eV) vary between 50 and 10⁴ cm⁻¹ showing doping dependant free electron absorption at low energy, doping independant band gap at high energy, and slowly doping dependant defect absorption in the medium energy range. In our micro Raman geometry, maxima appear or can be deduced near the frequency expected for either the A₁(LO⁻) or the A₁(LO⁺) modes split from the A₁(LO) mode by plasmon phonon interaction. There is a large systematic evolution in the expected way for the IR reflectivity.     

Semiconducting and structural properties of CrSi2 A-type epitaxial films on Si(111)

Chromium disilicide (CrSi₂) films 1 000 Å thick have been prepared by molecular beam epitaxy on CrSi₂ templates grown on Si(111) substrate. The effect of the substrate temperature on the structural, electrical and optical properties of CrSi₂ films has been studied by transmission and scanning electron microscopies, optical microscopy, electrical resistivity and Hall effect measurements and infrared optical spectrometry. The optimal temperature for the formation of the epitaxial A-type CrSi₂ film have been found to be about 750°C. The electrical measurement have shown that the epitaxial A-type CrSi₂ film is p-type semiconductor having a hole concentration of 1 × 10¹⁷cm⁻³ and Hall mobility of 2 980 cm² V⁻¹ s⁻¹ at room temperature. Optical absorption coefficient data have indicated a minimum, direct energy gap of 0.34 eV. The temperature dependence of the Hall mobility (μ) in the temperature range of T = 180–500 K can be expressed as μ = 7.8 × 10¹⁰T⁻³cm²V⁻¹s⁻¹.     

Doping effects on the optical properties of evaporated a-Si:H films

Thin films of a-Si:H are deposited on substrates at 300°C by a conventional thermal evaporation technique. The electrical conductivity of these films is modified by the addition of antimony giving n-type films. The optical properties of the films are investigated using spectrophotometric measurements of the transmittance and reflectance in the wavelength range 200–3000 nm. Both the refractive index n and the absorption coefficient increase when the Sb content is increased. The absorption edge shifts to lower energies for doped films. The optical gap E_g is evaluated using three different plots for comparison, namely; (hν)^1/2, (/hν)^1/2 and (hν)^1/3. The value of E_g decreases with doping for the three expressions. The Urbach parameter E₀ is calculated and found to increase with doping from 74 meV for the undoped film to 183 meV for concentrations of 9.4 at.% Sb.     

Structural and optical properties of Cu nanoparticles embedded in Si3N4/Si by ion implantation

Cu nanoparticles (NPs) have been fabricated in Si₃N₄/Si by 45 keV Cu ion implantation at a dose of 1 × 10¹⁷ cm⁻², and followed by thermal processing at 500–700 °C in air. Techniques, such as atomic force microscopy and X-ray diffraction are used to confirm the formation and evolutions of Cu NPs. The surface plasmon resonance of Cu NPs has been investigated by reflection spectroscopy. The orange–red luminescence band (600 nm) with high fluorescence quantum efficiency has been observed in Cu NPs, and its possible mechanism has also been discussed.     

Self-assembled growth and magnetotransport investigations on strained Si/SiGe multilayers on vicinal (113)-Si surfaces

We have reported on the growth and magnetotransport properties of modulation p-doped Si_1−xGe_x quantum wells on strained multilayers of 2.5 nm Si_1−xGe_x/10 nm Si on vicinal (113) Si surfaces. Owing to the strong step-bunching properties of the (113) Si surface, both the Si_1−xGe_x and the Si layers exhibited a regular pattern of large steps. Low-temperature magnetotransport measurements revealed a hole density (6–9×10¹¹ cm⁻²) independent of direction, whereas a pronounced mobility anisotropy was found. The mobility (1000–2000 cm²/Vs) was approximately two times higher along the [33-2] direction compared to a perpendicular [−110] direction. This is attributed to anisotropic hole scattering caused by anisotropic shear strain which is always present in strained layers on (113) Si. No influence of the large regular steps, whose direction is given by the direction of the substrate miscut, on the mobility was found.     

Fracture mechanisms of ceramic coating during wear

A typical buckling phenomenon of the coating on the wear groove caused by the residual compressed stress was analyzed by the interface fracture mechanics and the buckling theory. It has been found that there is a critical thickness of coating on the wear groove for the buckling. The critical thickness can be calculated by t_b/c_d = [12(1 − v²_f)σ_R/π²E_f]1/2 (here t_b is the coating thickness, c_d the length of the interfacial crack, v_f the Poisson's ratio of the coating, σ_R the residual compressed stress in the coating, and E_f the elastic modulus of the coating).     

Effect of the microstructure of Si3N4 on the adhesion strength of TiN film on Si3N4

The effect of the microstructure of silicon nitride, which was used as a substrate, on the adhesion strength of physical vapor deposited TiN film on Si₃N₄ was investigated. Silicon nitride substrates with different microstructures were synthesized by controlling the size (fine or coarse), the phase ( or β) of starting Si₃N₄ powder, and sintering temperature. The microstructure of Si₃N₄ was characterized in terms of grain size, aspect ratio of the elongated grain, and β-to- phase ratio. For a given chemical composition but different mechanical properties, such as toughness, elastic modulus, and hardness of Si₃N₄ were obtained from the diverse microstructures. Hertzian indentation was used to estimate the yield properties of Si₃N_4, such as critical loads for yield (P_y) and for ring cracking (P_c). The effect of the microstructure of Si₃N₄ on adhesion strength evaluated by scratch test is discussed. TiN films on Si₃N₄ showed high adhesion strengths in the range of 80–140 N. Hardness and the P_y of Si₃N₄ substrate were the primary parameters influencing the adhesion strength of TiN film. In TiN coating on Si₃N₄, substrates with finer grain sizes and higher phase ratios, which show high hardness and high P_y, were suitable for higher adhesion strength of TiN film.     

Electrical properties of evaporated polycrystalline Ge thin-films

Electrical properties of Ge thin films evaporated on Si₃N₄ CVD-coated Si substrate were improved by introducing a heat treatment after the deposition of Ge films. Evaporation conditions were optimized by changing the substrate temperature and deposition rate, and then, heat treatment was performed. At substrate temperatures during the evaporation lower than 300 °C and higher than 400 °C, deposited films were amorphous and polycrystalline, respectively. At substrate temperatures lower than 400 °C, Ge films were evaporated without degrading the surface roughness. The Hall mobility of films evaporated at room temperature increased with increasing the substrate and heating temperature and showed about 400 cm² V⁻¹ s⁻¹ for the hole concentration of 4 × 10¹⁷ cm⁻³ at the heating temperature of 900 °C. This value was almost comparable to that of p-type Ge single crystal.     

稀土氧化物对常压烧结氮化硅陶瓷性能的影响

高导热氮化硅陶瓷是大功率电力电子器件散热的关键候选材料。研究采用稀土氧化物(Re₂O₃)和氧化钛(TiO₂)烧结助剂体系, 通过低温常压烧结方法来制备氮化硅陶瓷, 以有效降低成本, 满足实际应用的需求。系统研究了烧结助剂种类及含量对Si₃N₄陶瓷的致密化行为、热导率、显微结构以及力学性能的影响。研究发现随着稀土离子半径的增大, 材料的致密度和热导率均呈现下降趋势, 添加Sm₂O₃后样品最高密度仅为3.14 g/cm³。但是当Sm₂O₃-TiO₂烧结助剂含量为8wt%时, 样品断裂韧性可达5.76 MPa•m^1/2。当添加Lu₂O₃且烧结助剂含量为12wt%时, 材料的密度可达3.28 g/cm³, 但是大量存在的第二相导致热导率仅为42.3 W/(m∙K)。研究发现该材料具有良好的断裂韧性。经1600℃退火8 h后, Er₂O₃-TiO₂烧结助剂样品的热导率达到51.8 W/(m∙K), 基本满足一些功率电路基板材料的实际应用需求。     

New transparent conducting MgIn2O4---Zn2In2O5 thin films prepared by magnetron sputtering

New materials for a transparent conducting oxide film are demonstrated. Highly transparent Zn₂In₂O₅ films with a resistivity of 3.9 × 10⁻⁴ Ω cm were prepared on substrates at room temperature using a pseudobinary compound powder target composed of ZnO (50 mol.%) and In₂O₃ (50 mol.%) by r.f. magnetron sputtering. MgIn₂O₄---Zn₂In₂O₅ films were prepared using MgIn₂O₄ targets with a ZnO content of 0–100 wt.%. The resistivity of the deposited films gradually decreased from 2 × 10⁻³ to 3.9 × 10⁻⁴ Ω cm as the Zn/(Mg + Zn) atomic ratio introduced into the films was increased. The greatest transparency was obtained in a MgIn₂O₄ film. The optical absorption edge of the films decreased as the Zn/(Mg + Zn) atomic ratio was increased, corresponding to the bandgap energy of their materials. It was found that the resistance of the undoped Zn₂In₂O₅ films was more stable than either the undoped MgIn₂O₄, ZnO or In₂O₃ films in oxidizing environments at high temperatures.     

Standing-wave solutions of the Enneper (sine-Gordon) equation

The present paper investigates the real solutions of the partial differential equations (∂²ω/∂u²) − (∂²ω/∂ν²) = sin ω (Enneper or sine-Gordon equation) that are of the FORM = F(|₁(u) · |₂(ν)). In the application of the Enneper equations to crystal physics such solutions may represent standing waves. A complete classification of these solutions and its degenerate cases is given.     

Sintering behavior and microwave dielectric properties of Bi3(Nb1−xTax)O7 solid solutions

Solid solutions of Bi₃(Nb_1−xTa_x)O₇ (x = 0.0, 0.3, 0.7, 1) were synthesized using solid state reaction method and their microwave dielectric properties were first reported. Pure phase of fluorite-type could be obtained after calcined at 700 °C (2 h)⁻¹ between 0 ≤ x ≤ 1 and Bi₃(Nb_1−xTa_x)O₇ ceramics could be well densified below 990 °C. As x increased from 0.0 to 1.0, saturated density of Bi₃(Nb_1−xTa_x)O₇ ceramics increased from 8.2 to 9.1 g cm⁻³, microwave permittivity decreased from 95 to 65 while Q_f values increasing from 230 to 560 GHz. Substitution of Ta for Nb modified temperature coefficient of resonant frequency τ_f from −113 ppm °C⁻¹ of Bi₃NbO₇ to −70 ppm °C⁻¹ of Bi₃TaO₇. Microwave permittivity, Q_f values and τ_f values were found to correlate strongly with the structure parameters of fluorite solid solutions and the correlation between them was discussed in detail. Considering the low densified temperature and good microwave dielectric proprieties, solid solutions of Bi₃(Nb_1−xTa_x)O₇ ceramics could be a good candidate for low temperature co-fired ceramics application.     

Growth and spectroscopy of Dy doped in ZnWO4 crystal

Single-crystal ZnWO₄:Dy³⁺ was grown by Czochralski technique. The XRD, absorption spectra as well as fluorescence spectrum are investigated and the Judd–Ofelt intensity parameters Ω₂, Ω₄, Ω₆ are obtained to be 7.76 × 10⁻²⁰ cm², 0.57 × 10⁻²⁰ cm², 0.31 × 10⁻²⁰ cm², respectively. Calculated radiative transition rate, branching ratios and radiative lifetime for different transition levels of ZnWO₄:Dy³⁺ crystals are presented. Fluorescence lifetime of ⁴F_9/2 level is 158 μs and quantum efficiency is 66%.The most intense fluorescence line at 575 nm correlative with transition ⁴F_9/2 → ⁶H_13/2 is potentially for application of yellow lasers.