远红外照明控制器的设计

文章介绍了一种由热释电传感器作远红外自动探测并用单片机控制的照明控制器,详细阐述了被动红外探测与主动红外探测兼用的原理和作用,并讨论了系统软硬件的设计与实现方法。     

基于主动式热释电红外传感器的自动控制

本项目设计研究的主动武热释电红外传感器,跟市面上的被动式热释电红外传感器相比,能稳定有效地检测到静态人体,达到“人到灯亮,人在灯亮,人离灯灭”的效果。基于该传感器设计室内照明设备的自动控制系统,实现对教学楼等大型楼宇内照明系统的智能控制。     

公共场所照明节电智能控制系统设计

该系统在传统的热释电人体红外开关的基础上,加入以电机为主的机械部分,周期性带动热释电传感器移动,使静止的人体对其产生相对运动,因而能检测到静止的人.另外还加入了以Atmega8单片机为核心的控制系统,在软件的配合下,系统智能化程度高,能正确判断周围环境并进行动作.因此能用于教室、办公室等对照明质量要求较高的场合,实现有...     

一种基于热释电传感器p7187的人体测温仪的设计

人体测温仪的设计主要为适应人体体温快速无接触测量的需要。主要介绍热释电红外传感器的工作原理以及最适宜人体红外线检测的热释电传感器p7187的结构和等效电路,阐述了基于热释电传感器p7187的红外测温仪的工作原理,讨论了该系统的设计与实现方法,简单介绍了该测温仪系统的适用条件。应用表明该设计有广泛的临床实用性。     

热释电人体红外传感器原理与应用(上)

<正> 热释电人体红外传感器为90年代出现的一种新型传感器件。它专门用来检测人体辐射的红外能,用它可以做成主动式(检测静止或移动极缓慢的人体)和被动式(检测运动人体)人体检测器。目前,一些书刊只简要介绍了被动式检测原理,本文就主动式和被动式两方面的原理作较详细的介绍。 一、热释电人体红外传感器的基本结构和原理 目前,市场上常见的热释电传感器有上海产SD02、PH5324,德国产LHI954、LHI958、美国HAMAMATSU     

基于热释红外探头的电灯节能自动开关

介绍了热释红外传感器的工作原理,给出了一种热释电红外报警器的结构原理及其应用电路。依据接收人体红外光谱而工作,当人体在其接收范围内活动,热释电红外探头探测到红外信号并对接收到的微弱信号加以放大,然后驱动继电器,自动开启负载,人不离开且在活动,报警持续工作,直至人离开后延时关闭报警,并给出了其完整的硬件电路设计方案与实现方法及节能目的。     

动态下红外热释电传感器的目标定位方法

为了提高热释电传感器的探测灵敏度,拓宽其传统使用范围,提出了一种动态下热释电传感器发现人体目标并测向测距的新型使用方法。该方法大大扩展了热释电传感器的探测范围,根据波形能准确判定目标的方向,利用经验值推断出人体的目标距离。该系统采用热释电红外传感器作为探测器,创新运用红外透镜代替传统用法中的菲涅耳透镜,在步进电机的匀速带动下,单片机记录测量区域的原始红外波形(在环境基本不变且没有目标进入的情况下,波形具有一定规律且基本保持不变);目标进入测量区域内时将引起原始规律变化,单片机利用帧间差分法求出变化的波形,判断目标有无及方向、距离等结果。与热释电传感器的传统使用方法相比,该方法具有反应迅速、探测灵敏、探测范围大、可测向测距等新特点,大大拓宽了热释电传感器的使用范围,进一步提升了其在安防和智能家居系统中的应用。     

基于多探测传感器的智能灯控制系统的设计

针对目前高校、商场、道路等公共场所照明用电浪费严重的问题,本文设计了一款智能灯控制系统。以AT89S52单片机作为核心控制芯片,利用光强检测模块、声强检测模块、步进电机旋转热释电红外传感器模块构成了多方式探测系统。该系统创新性地利用多传感器互补探测,辅以步进电机旋转实现了热释电红外传感器的动态检测。     

热释电红外新器件的工作原理及其应用

热释电红外传感器在国民经济和军事中的应用将越来越广泛。其主要部分由热释电红外探测传感器、放大电路及应用电路组成。本文介绍了热释电红外传感技术的基本原理及其应用,以及依据此原理设计的热释电红外电源开关控制、防盗防火报警、自动监测等。     

村田研制表面贴装热释电红外传感器

以前，用于探测人体的热释电红外传感器，由于没有表面贴装型传感器，因此只能向有限的市场拓展。这次，通过运用村田制作所独家的封装工艺和开发新型热释电陶瓷材料，针对无铅焊接回流的表面贴装型的热释电红外传感器实现了比以前更高精度的探测，使得向家电、手机、游戏机等各种市场的拓展成了可能。     

A High Power CMOS Switch Using Substrate Body Switching in Multistack Structure

A novel high power CMOS RF switch using the substrate body switching technique in a multistack structure is designed, implemented, and characterized in a standard 0.18- triple-well CMOS process. One of the stacked devices in the receive side has a body switch at the bulk port in order to provide high power handling capability to the transmit switch side without compromising insertion loss to the receiver switch. The body switch connected to the bulk port at one of the receiver switches turns on in mode to minimize leakage current into path. In the meanwhile, that switch turns off in mode so that the bulk port can have body floating to reduce leakage current to substrates. Experimental data show that the switch using the body-switching technique has 1 dB of 31.5 dBm that is 2.5 dB higher than the one using the body floating technique. Insertion loss is 1.5 dB at 1.9 GHz in the transmit switch and 1.8 dB in the receiver switch. Isolation is less than 30 dB for switch and 20 dB for switch at 1.9 GHz.     

嵌入式智能高压带电传感器的设计

深入剖析PASS开关接地刀闸合闸的闭锁功能,在此基础上设计出以MSP430F2012单片机和AD623仪表放大器为主体的智能高压带电传感器,同时配合能精确感应高压导体带电状态信息的高压传感探头,实现可控制闭锁功率继电器的触点状态及接地刀闸的带电闭锁功能.该传感器结构具有简单、体积小等特点,在不改变现有PASS主体结构的情况下,可有效解决原有技术存在的设备造价昂贵、功能过剩问题.     

PLCT系列热释电薄膜的最新研究进展

热释电红外探测器广泛应用于辐射测温，红外光谱测量，安全警戒，红外热成像等领域。掺杂钛酸铅薄膜是性能优异，应用广泛的热释电薄膜，文章主要介绍了镧，钙双掺的钛酸铅薄膜的性能。比较了不同组分的PCT、PLT、PLCT铁电材料的制备方法、结晶性、铁电性、介电性及热释电性能与分组的关系，并对PLT系列热释电薄膜材料的应用前景作了探讨。     

一种新型软开关BUCK变换器

根据传统硬开关电源引起的不良影响,提出了一种新型软开关BUCK变换器,使得高低桥MOSFET管都能在不管是轻负载或者重负载情况下达到ZVS状态.在连续导电模式（CCM）和高负载电流情况下,上桥MOSFET管开通,下桥MOSFET管侧的二极管在死区时间内导电,这样就造成了上桥MOSFET管的开关损耗.新型软开关BUCK变换器在传统BUCK变换器的基础上加入了电感和电容,在外加电感电容的情况下,在CCM下的死区时间内的电感电流可以有效地从下桥二极管整流到上桥二极管中.根据仿真结果和工作模式分析验证其性能.     

CMOS T/R Switch Design: Towards Ultra-Wideband and Higher Frequency

This paper presents the comprehensive considerations of CMOS transmit/receive (T/R) switch design towards ultra-wideband and over 15-GHz frequencies. Techniques for minimizing parasitics and increasing linearity are discussed. A customized transistor layout is proposed for T/R switch design and its effects on insertion loss and isolation are studied. The analysis shows that a series-only architecture using the customized transistor layout achieves better insertion loss and reasonable isolation. A double-well body-floating technique is proposed and its effects are discussed. A differential switch architecture without shunt arms is designed and verified by experimental results. Fabricated in 0.13-mum triple-well CMOS, the T/R switch exhibits less than 2 dB insertion loss and higher than 21 dB isolation up to 20 GHz. With resistive body floating and differential architecture, the high linearity is of ultra-wideband characteristic, more than 30-dBm power 1-dB compression point (P_1dB) is obtained up to 20 GHz in only 0.03 mm² active die area     

10 kV高重频开关组件设计

设计了一种基于功率金属氧化物半导体场效应晶体管(MOSFET)的高压开关组件。通过串联20只1 kV的RF MOSFET单元电路,获得耐压10 kV以上的高速、高重复频率的开关组件。开展了高压开关组件的结构设计和1 kV的RF MOSFET单元电路设计及散热设计。利用开关组件进行了10 kV脉冲源实验装置设计,测试结果发现脉冲前沿较仿真结果变缓。     

A Low Loss High Isolation DC-60 GHz SPDT Traveling-Wave Switch With a Body Bias Technique in 90 nm CMOS Process

In this letter, a low loss high isolation broadband single-port double-throw (SPDT) traveling-wave switch using 90 nm CMOS technology is presented. A body bias technique is utilized to enhance the circuit performance of the switch, especially for the operation frequency above 30 GHz. The parasitic capacitance between the drain and source of the NMOS transistor can be further reduced using the negative body bias technique. Moreover, the insertion loss, the input 1 dB compression point (${rm P} _{{1}~{rm dB}}$), and the third-order intermodulation (IMD3) of the switch are all improved. With the technique, the switch demonstrates an insertion loss of 3 dB and an isolation of better than 48 dB from dc to 60 GHz. The chip size of the proposed switch is 0.68 $,times,$0.87 ${rm mm}^{2}$ with a core area of only 0.32$,times,$0.21 ${rm mm}^{2}$.      

卫星用锂电池组旁路开关可靠性预计

旁路开关是卫星电池配套器件,连接在各电池之间,对故障电池进行切除和保护,保证整个电池组的正常工作,其可靠性将影响电池组的可靠性,要求旁路开关可靠性不低于0.9993.本文基于GJB/Z299C,采用元器件应力分析的可靠性预计法来计算开关本体的失效率,再通过失效率的指数分布,计算出旁路开关的可靠度,结果满足可靠性指标要求...     

Switch Bootstrapping for Precise Sampling Beyond Supply Voltage

Bootstrapped switches are used in a variety of applications including DC–DC converters, pipelined analog-to-digital converters and high voltage switches and drivers. Current work on highly integrated power management applications often requires the ability to measure voltage quantities that exceed the supply voltage in magnitude. This is primarily due to a basic need to maximize efficiency by running the power management IC on as low supply voltage as possible, while still maintaining the ability to sample and measure quantities from the surroundings that could well exceed the battery voltage. In this paper, a new bootstrapped switch is presented. The switch enables the precise sampling of input signals well greater than the chip supply voltage with no static power consumption, and without activating on-chip parasitic body diodes. The bootstrapped switch, presented here, is designed to sample an input signal with a 0–5.5-V range at a supply voltage of 2.75 V. Measurement data shows functionality for a 0–6-V input signal range with a supply voltage as low as 1.2 V.