铝掺杂氧化锌薄膜的电学及光学性能

利用脉冲激光沉积法,在氧气氛下(氧分压为11 Pa)以石英玻璃为基体沉积了铝掺杂氧化锌薄膜。靶材选用锌铝合金靶,沉积过程中基体温度保持在150℃。研究了ZnO薄膜中铝的质量分数与薄膜电学性能和发光性能的关系。结果表明,掺杂铝的质量分数为1.37%时所获得的ZnO薄膜具有最小的电阻率和较强的紫外发光特性。     

热退火对氧化镓薄膜性质的影响

采用真空蒸发技术在蓝宝石衬底上制备了氧化镓透明半导体薄膜;研究了热退火对氧化镓薄膜结构、电学和光学等特性的影响.在退火前,氧化镓薄膜是一种无定型的、高阻薄膜.经过退火后转变成多晶薄膜,但薄膜的电学特性变化较小.随着退火温度的升高,氧化镓薄膜逐渐形成了(401)择优取向,薄膜的光学带隙也随之变大,在750℃退火时得到了最大的光学带隙为4.79eV.     

Cr沉积TiO_2复合薄膜的制备及其可见光催化性能

真空蒸镀法结合溶胶凝胶法成功制备Cr沉积TiO2三层复合薄膜.通过XRD、SEM、UV-vis等手段表征沉积Cr后的TiO2薄膜的结构、可见光吸收性能,以亚甲基蓝溶液为目标物评定其可见光光催化活性.结果表明:该法制备的Cr沉积TiO2复合薄膜,在723 K热处理后,蒸镀的金属层仍然为金属Cr,823 K时被氧化为Cr2O3.不同温度热处理后Cr沉积的TiO2复合薄膜在可见光区均表现出良好的光吸收性.而且随着热处理温度的升高,光吸收性能明显增强.降解实验表明,823 K热处理后的薄膜样品光催化性能最好.在可见光光照射2 h后,对亚甲基蓝溶液降解率接近40%.     

高频电磁屏蔽用ITO膜结构与性能分析

采用阴极磁控溅射法制备用于电磁屏蔽的ITO透明导电膜,方块电阻在5～40Ω／□范围内。测试不同方块电阻膜层的电阻率、膜厚、可见光透光度、雾度、对8～18GHZ频率范围内电磁波的反射率等性能,通过X射线衍射图谱和X射线回摆曲线研究膜层的结晶程度和晶粒大小对膜层性能的影响,引入特性优化因子来综合评价膜层的性能。     

电泳沉积法制备三氧化钨薄膜

研究了由WO3溶胶采用电泳沉积法制备WO3薄膜,讨论了电流密度、溶胶陈化时间、溶胶浓度、溶胶pH值对制备WO3薄膜厚度的影响;及膜厚与沉积时的电流密度对薄膜与基底结合力的影响.通过TGA-DTA和IR分析探讨了固体薄膜在热处理过程中的结构变化.     

嵌段共聚物薄膜中大长径比柱状相的垂直取向

利用PG(含少量甲基丙烯酸缩水甘油酯的苯乙烯-甲基丙烯酸甲酯无规共聚物)刷对ITO基板改性,在其上面旋涂不同厚度的聚苯乙烯-聚甲基丙烯酸甲酯嵌段共聚物(PS-b-PMMA)薄膜,对薄膜进行热退火和丙酮蒸汽退火处理,使用TEM、SEM、AFM对退火后的嵌段共聚物薄膜形貌进行表征。结果表明,热退火只能使最大厚度(120nm)约为3个相结构周期的薄膜相畴垂直取向,而后继续丙酮蒸汽退火30min,则能使厚度达4个相结构周期的薄膜相畴垂直取向。     

Surface and electrical properties of NiCr thin films prepared by DC magnetron sputtering

Several batches of NiCr alloy thin films with different thickness were prepared in a multi-targets magnetron sputtering apparatus by changing sputtering time while keeping sputtering target power of Ni and Cr fixed. Then the as-deposited films were characterized by energy-dispersive X-Ray spectrometer （EDX）, Atomic Force Microscope （AFM） and four-point probe （FPP） to measure surface grain size, roughness and sheet resistance. The film thickness was measured by Alpha-Step IQ Profilers. The thickness dependence of surface roughness, lateral grain size and resistivity was also studied. The experimental results show that the grain size increases with film thickness and the surface roughness reaches the order of nanometer at all film thickness. The as-deposited film resistivity decreases with film thickness.     

Infrared thermochromic properties of VO2 thin films prepared through aqueous sol-gel process

The stoichiometric vanadium(IV) oxide thin films were obtained by controlling the temperature, time and pressure of annealing. The thermochromic phase transition and the IR thermochromic property of 400 nm and 900 nm VO2 thin films in the 7.5 μm-14 μm region were discussed. The derived VO2 thin film samples were characterized by Raman, XRD, XPS, AFM, SEM, and DSC. The resistance and infrared emissivity of VO2 thin films under different temperature were measured, and the thermal images of films were obtained using infrared imager. The results show that the VO2 thin film annealed at 550 ℃ for 10 hours through aqueous sol-gel process is pure and uniform. The 900 nm VO2 thin film exhibits better IR thermochromic property than the 400 nm VO2 thin film. The resistance of 900 nm VO2 film can change by 4 orders of magnitude and the emissivity can change by 0.6 during the phase transition, suggesting the outstanding IR thermochromic property. The derived VO2 thin film can control its infrared radiation intensity and lower its apparent temperature actively when the real temperature increases, which may be applied in the field of energy saving, thermal control and camouflage.     

Controlled Size and Density Distribution of Nanoparticles by Thermal Ammonia Etching Method

Nickel nanometer catalyst thin films were prepared on SiO2/Si substrates using sputtering coater. The effects of ammonia pretreatment on the catalyst films from continuous film to the nanoparticles were investigated. The nanostructures of the Ni thin films as a function of the catalyst film original thickness, the pretreatment time and temperature were discussed. The optimum parameters of etching process were obtained, and the functional mechanism of ammonia was primarily analyzed. Scanning electron microsc...     

溅射时间对CIGS薄膜的结构及性能影响

选择铜铟镓硒(CIGS)四元合金靶材,采用一步磁控溅射法在钠钙硅玻璃衬底上制备CIGS薄膜。重点研究了溅射时间对CIGS薄膜结构及性能的影响。采用XRD、SEM、UV-Vis及四探针测试仪对薄膜进行表征。结果表明,随着溅射时间的增加,薄膜增厚,薄膜的结晶度变好,颗粒增大尺寸约1mm,电阻率明显降低,可见光的吸收系数接近105 cm-1。CIGS吸收层的性能对改善CIGS薄膜光伏电池的光转换效率非常有利。     

TiO_2薄膜表面粗糙度对光学特性的影响

薄膜表面粗糙度是影响薄膜光学性能的一个重要指标,采用Taylor Hobson表面轮廓仪对离子束辅助电子束热蒸发沉积的二氧化钛(TiO2)薄膜表面粗糙度进行了研究.采用椭偏仪通过选择不同的结构模型研究了不同基底粗糙度上沉积的TiO2薄膜的折射率和消光系数.研究结果表明:0.3 nm/s的沉积速率获得的TiO2薄膜表面粗糙度较小;在基底粗糙度较小时,TiO2薄膜具有一定的平滑作用.通过减小基底的粗糙度和考虑混合模型,TiO2薄膜特性有一定的提升,随着薄膜表面粗糙度的增加其折射率趋于2.08,消光系数趋于0.04.     

氧化铝缓冲层对ZnO薄膜性质的影响

采用反应磁控溅射的方法在石英衬底上制备了一层AI2O3薄膜,并将其作为后续ZnO薄膜生长的缓冲层.然后,采用反应磁控溅射的方法在AI2O3缓冲层上制备了ZnO薄膜.对比研究了引入Al2O3缓冲层前后,ZnO薄膜的结构和光学特性.通过引入Al2O3缓冲层,发现ZnO薄膜样品的(002)方向X射线衍射峰的半峰宽(FWHM)明显减小,光致发光谱中与缺陷相关的可见发光峰强度明显减弱,吸收光谱中的吸收边变得更加陡峭.这些结果表明引入Al2Q3缓冲层后,ZnO薄膜的结构和光学特性得到了很大改善,为制备高质量ZnO薄膜提供了参考.     

生长温度对掺钛氧化锌薄膜光学性质的影响

以氧化锌钛陶瓷靶作为溅射源,采用磁控溅射技术在玻璃衬底上制备了掺钛氧化锌(TZO)透明导电薄膜,通过X射线衍射仪和分光光度计测试表征以及全光谱拟合法分析,研究了生长温度对TZO薄膜晶体结构和光学性质的影响.结果表明:所有TZO样品均为六角纤锌矿结构,并具有(002)择优取向,生长温度对薄膜晶粒尺寸和光学透射率的影响较明显,而对折射率、消光系数和光学能隙的影响较小.当生长温度为200℃时,TZO薄膜的晶粒尺寸最大,可见光范围平均透射率(含衬底)为76.1%,对应的直接光学能隙为3.45 eV.     

Ar/CH_4流量比对a-C∶H薄膜沉积速率及性能的影响

为研究气体流量比对非平衡磁控溅射沉积含氢类金刚石薄膜（Diamond-Like Carbon,DLC）沉积速率及性能的影响,在不同Ar/CH4流量比条件下将a-C∶H沉积在单晶硅基底,采用傅里叶红外光谱、椭偏仪、表面轮廓仪对薄膜的沉积速率、光学特性及表面粗糙度进行研究.实验结果表明：引入甲烷气体后,非平衡磁控溅射沉积a-C∶H薄膜沉积速率大幅度提高;在3～5μm波段硅基底上镀制a-C∶H膜具有良好的红外增透特性,薄膜峰值透射率明显受到Ar/CH4流量比的影响,Ar/CH4流量比1∶3时,制备的a-C∶H峰值透过率可达69.24%;a-C∶H薄膜的折射率和消光系数随着CH4流量的增加而增大;a-C薄膜的粗糙度要优于a-C∶H薄膜,a-C∶H薄膜的粗糙度随厚度的增加而变大.     

沉积速率对离子辅助蒸发ITO光学性能的影响

选用高纯度ITO颗粒(w(In2O3)∶w(SnO2)=9∶1)作为蒸发膜料、CAB(钙铝钡)红外玻璃为基片,利用离子辅助电子束蒸发技术在不同的沉积速率下制备了光学性能优良的ITO薄膜,并详细讨论了沉积速率对ITO薄膜可见光透过率、禁带宽度、短波截止限、长波截止限及红外区透过率等性能的影响。结果表明:沉积速率对ITO薄膜的光学性能具有重要影响。薄膜的可见光透过率最高可达82.6%,并随沉积速率的升高而降低;禁带宽度随沉积速率的改变在3.75～3.98eV之间变化,短波截止限随着禁带的宽化,向短波方向移动;在红外区,ITO薄膜的平均透过率随沉积速率的上升而明显减小,薄膜等离子波长λp发生蓝移现象。     

热蒸发HfO_2薄膜光学常数表征

薄膜材料库中的光学常数与实际制备的相比有很大差别,精确求解在特定工艺条件下的光学常数对设计和制备多层薄膜具有重要意义。在熔融石英(JGS1)基底上,采用热蒸发沉积方法制备了厚度为330nm的单层HfO_2薄膜,利用分光光度计测量薄膜的透射率和反射率,并采用包络法和光度法分别计算得到230nm~800nm范围内折射率n和消光系数k的色散曲线。两种方法确定的HfO_2薄膜厚度分别为331.22nm和331.03nm,两者偏差为0.057%;在266nm处两种方法确定的折射率相差0.011,消光系数相差10-5量级。结果表明,运用包络法和光度法确定HfO_2薄膜光学常数的拟合结果吻合较好,能够相互验证且避免了单一方法求解过程中所产生的误差。     

Preparation and characterization of nanocrystalline SnO2 thin film by electrodeposition technique

A novel process for preparing tin oxide thin films directly on copper foil by electrodeposition was developed. An optimal preparation technology to obtain SnO2 thin films was proposed with current density of 8 mA/cm2, the time of deposition of 120 min, the concentration of tin dichloride of 0.02 mol/L and the concentration of dissociated acid of 0.03 mol/L. The phase identification, microstructure and morphology of the thin films were investigated by thermogravimetric analysis and differential thermal analysis, X-ray diffraction, Fourier transform infrared spectra,scanning electron microscopy and transmission electron microscopy. The as-deposited thin film was composed of SnO2·xH2O was obtained by drying at room temperature. Nanocrystalline SnO2 thin film having tetragonal structure with average grain size in the range of 8 to 20 nm and porous, uniform surface was obtained by heat-treating the as-deposited film at 400 ℃ for 2 h. Electrochemical characterization shows that SnO2 film can deliver a discharge capacity of 798 mAh/g and the SnO2 film with smooth surface and annealed at 400 ℃ for 2 h has better cycle performance than that with rough surface and annealed at 150 ℃ for 10 h.     

Preparation and Properties of Ag-TiO_2 Thin Films on Glass Substrates

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Nano-sized Thin Films Fabricated by Ion Beam Sputtering and Its Properties

Nanoscale thick amorphous Ni-Cr alloy thin films were fabricated by low-energy ion beam sputtering technology; then the as-deposited samples experienced rapid thermal process to realize the transformation from amorphous to crystalline state. The film thickness was measured with a-stylus surface profiler, the structure and the compositions of the films were confirmed by low angle X-ray diffraction and scanning auger electron microprobe respectively, and the surface topography was characterized by scanning electron microscope and scanning probe microscope. Electrical property of the films was measured by fourpoint probe. The experimental results illustrate that the combined processes of ion beam sputtering and rajid thermal process are effective for fabrication nanoscale Ni-Cr alloy thin film with good properties.     

Preparation and electrical properties of BaPbO3 thin film

BaPbO3 thin films were deposited on Al2O3 substrates by sol-gel spin-coating and rapid thermal annealing. The microstructure and phase of BaPbO3 thin films were determined by X-ray diffractometry, scanning electrons microscopy and energy dispersive X-ray spectrometry. The influence of annealing temperature and annealing time on sheet resistance of the thin films was investigated. The results show that heat treatment, including annealing temperature and time, causes notable change in molar ratio of Pb to Ba, resulting in the variations of sheet resistance. The variation of electrical properties demonstrates that the surface state of the film changes from two-dimensional behavior to three-dimensional behavior with the increase of film thickness. Crack-free BaPbO3 thin films with grain size of 90 nm can be obtained by a rapid thermal annealing at 700 ℃ for 10 min. And the BaPbO3 films with a thickness of 2.5 μm has a sheet resistance of 35 Ω·-1.