掺杂对钛酸锶压敏陶瓷性能的影响

研究了施主掺杂和受主掺杂对SrTiO3压敏陶瓷材料微观结构和电性能的作用。研究结果表明，La、Nb进行双施主掺杂时按一定比例能获得较低的压敏电压；以La进行单施主掺杂，含量为1．2mol％时，压敏电压最低。双施主掺杂的压敏电压要高于单施主的电压。以CuO进行受主掺杂的效果要好于以MnCO3进行受主掺杂的效果。     

TiO2掺杂对ZnO压敏电阻低压化过程的影响

近年来，加入晶粒助长剂TiO2以实现低压化的低压ZnO压敏电阻发展迅速。实验所用配方为掺杂TiO2的98.3％ZnO-0.7％Bi2O3-1.0％TiO2(摩尔分数)和相应无TiO2掺杂的配方，在900～1200℃下烧结制备样品。给出了相分析、半定量分析及电性能测试结果。发现TiO2可以有效促进ZnO晶粒长大，降低压敏电压梯度。1100℃下，TiO2掺杂试样的平均晶粒尺寸为56.4μm，远大于无TiO2掺杂的31.8μm。大部分TiO2首先与Bi2O3反应生成Bi4(TiO4)3液相，这大大促进了ZnO晶粒生长。高于1000℃时Bi4(TiO4)3分解，分解出的TiO2与ZnO发生反应，生成Zn2TiO4尖晶石相，晶粒生长受阻，直至停止。     

钛镁掺杂对氧化铝陶瓷的相组成、微观形貌及沿面闪络特性的影响

针对高电压绝缘系统中易发生沿面闪络现象的绝缘材料,设计了一种通过掺杂MgO和TiO2来提高氧化铝陶瓷闪络电压的方案.通过高温烧结,在1 500℃下制备了掺杂不同含量TiO2和MgO的氧化铝陶瓷,并研究了钛镁掺杂对氧化铝陶瓷相组成、断面微观结构、介电常数、电阻率和沿面闪络电压的影响.结果 表明,TiO2和MgO的共掺入能降低氧化铝陶瓷的烧结温度,促进氧化铝陶瓷晶粒的均匀性,且在一定程度上提高氧化铝陶瓷的沿面闪络电压.     

V2O5掺杂ZnO-Bi2O3-CO2O3-MnCO3-TiO2低压压敏陶瓷的微结构和电性能

采用固相反应法制备V2O5掺杂的ZnO–Bi2O3–Co2O3–MnCO3–TiO2（ZBCMT）低压压敏陶瓷。利用X射线衍射、扫描电子显微镜、压敏电阻直流参数仪和阻抗分析仪研究了V2O5掺杂对ZBCMT陶瓷微结构、压敏性能、电场强度–电流密度特性和介电性能的影响。结果表明：掺摩尔分数为0.010%的V2O5时,ZBC...     

热处理对氧化锌压敏电阻的影响

本文研究了在同一烧结温度下,烧结前后的不同热处理方式对氧化锌压敏电阻显微结构和电学性能的影响。实验发现,预烧可以解决烧结时间过长导致Bi2O3等挥发和烧结时间不足影响烧结效果的矛盾。另外,还发现急冷能显著提高非线性系数。实验获得了致密的氧化锌压敏陶瓷,压敏电压572V/mm,非线性指数56。     

SiO2掺杂对ZnO-Bi2O3基压敏陶瓷微观结构及电性能的影响

采用传统固相法成功制备了不同SiO2掺杂量的ZnO-Bi2O3基压敏陶瓷.研究了SiO2添加剂对ZnO-Bi2O3基压敏陶瓷物相组成、微观形貌和电性能的影响规律及作用机理.XRD结果表明,ZnO-Bi2O3基压敏陶瓷由ZnO主晶相和尖晶石相、富Bi相和含Si相等第二相组成.当SiO2含量增加时,ZnO晶粒尺寸逐渐减小,...     

Bi2O3及MnO2掺杂对[(Pb,Ca) La](Fe,Nb)O3介质陶瓷结构及微波性能的影响

研究了Bi2O3及MnO2掺杂量对[(Pb0.5Ca0.5)0.92La0.08](Fe0.5Nb0.5)O3陶瓷结构及介电性能的影响.结果表明Bi2O3及MnO2均是良好的烧结助剂,可降低体系的烧结温度60～100 ℃,同时提高陶瓷的密度.XRD图谱证明当MnO2的质量分数≤2%时,陶瓷为钙钛矿相及焦绿石相,表明Mn4+进入主相晶格,而Bi2O3的掺杂会使体系中出现未知第三相.随MnO2的增加,陶瓷的介电常数先增加后减小,同时使品质因数及谐振频率温度系数的单调下降.Bi2O3的掺杂则会使陶瓷介电常数及谐振频率温度系数升高,而品质因数下降.Bi2O3及MnO2的联合掺杂比单一掺杂更有效地降低了陶瓷的烧结温度,达100～140 ℃,且在低温烧结条件下有比单一掺杂时更好的微波介电性能.其中当Bi2O3和MnO2的质量比k=1,2种添加物总质量分数w=1%,烧结条件为1 050 ℃,保温4 h,陶瓷的相对介电常数εr,品质因数(Q)与谐振频率(f)的乘积Qf以及谐振频率温度系数分别为91.1, 4 870 GHz和18.5×10-6/℃.     

Y2O3掺杂对(Bi0.5Na0.5)0.94Ba0.06TiO3无铅压电陶瓷性能的影响研究

采用传统固相反应法制备了Y2O3掺杂(Bi0.5Na0.5)0.94Ba0.06TiO3(简写为BNBT6)陶瓷[简称为BNBT6-x(wt%)Y2O3陶瓷].研究了Y2O3 (0.2wt%～0.8wt%)掺杂对BNBT6陶瓷的结构、介电、压电、铁电性能的影响.结果表明,所有Y2O3掺杂陶瓷样品均形成了单一的钙钛矿结构;陶瓷的介电、压电、铁电性能受Y2O3掺杂的影响较为显著:当掺杂0.4wt%Y2O3时,10 kHz频率下测得的室温εr达到1530,且tanδ较小,为0.050,d33达到152 pC/N,kp=0.27,Qm=134.掺杂0.2wt%的Y2O3时BNBT6陶瓷的d33为145 pC/N,kp增大到0.29,Qm达到173,tanδ为0.053;掺杂适量Y2O3的BNBT6陶瓷铁电性能也得到改善.     

低温制备ZnO压敏陶瓷及其电性能研究

ZnO压敏陶瓷作为电压保护以及抗浪涌设备中电子元器件的核心材料,其高非线性系数,高通流容量,强浪涌吸收能力等性能研究以及低温烧结制备技术受到广泛关注。通过掺杂烧结助剂BST(Bi_2 O_3∶SiO_2∶TiO_2摩尔比为6∶4∶3),于875℃烧结制备了性能优异的ZnO压敏陶瓷。主要探究了烧结助剂的掺量对ZnO压敏陶瓷的物相组成、微观结构、体积密度以及压敏性能的影响。结果表明:BST掺杂会导致晶粒细化,有效地提高样品的致密度及压敏性能。当BST掺量摩尔分数为0.25%时,获得样品的综合性能最佳,体积密度为5.63 g/cm~3,相对密度为97.4%,非线性系数最大为38.9,电压梯度为最小值301.2 V/mm,漏电流密度为最小值0.028 A/mcm~2。     

ZnO掺杂量与烧结温度对SnO2-Ta205-ZnO压敏变阻材料性能的影响

以SnO2、Ta2O5和ZnO粉为原料,通过传统陶瓷固相反应烧结法制备了压敏变阻材料,实验中ZnO含量为0～2．00％（摩尔分数）,烧结温度控制在1300～1500℃并保温2h。研究了ZnO掺杂量和烧结温度对材料的组成、微观结构和电学性能的影响。结果表明：在温度一定条件下,随着ZnO掺杂量的增加,材料的非线性系数、压敏电压先增大后减小;在ZnO含量一定时,随着烧结温度从1300℃升至1450℃,材料的非线性系数、压敏电压先增大后减小。ZnO掺杂量为0．50％时,在1450℃烧结得到的样品的非线性系数最高（6．2）,漏电流最小（262vA／cm^2）,压敏电压较高（83V／mm）。     

掺杂炭黑电催化剂氧还原性能研究

碳纳米材料由于其良好的结构和功能特性,常做为氧还原反应中电催化剂的载体或直接做为氧还原反应的电催化剂。本文从具有良好导电性和高比表面积的炭黑(BP2000)出发,在对其进行表面氧化的基础上分别通过高温氨化和Fe(NO3)3溶液浸渍/高温煅烧进行了掺氮(N-BP2000)和掺铁(Fe-BP2000),对比考察了掺氮和掺铁对所得催化剂氧还原性能的影响。结果表明,所制备的掺氮炭黑(N-BP2000)和掺铁炭黑(Fe-BP2000)电催化剂的氧还原活性均较BP2000电催化剂提高显著。其中,Fe-BP2000电催化剂,表现出了最佳的氧还原活性,其半波电位为0.774 V,分别比N-BP2000与BP2000电催化剂正22、108 mV,同时其也表现出最佳的长程稳定性。     

Preparation and characterization of conducting polymer coating on ABS substrate

Conducting polymer coatings on ABS were prepared by dipping them into m‐cresol solutions containing polyaniline (PANI), poly(o‐toluidine) (POT), and poly(o‐anisidine) (PoAN) protonated with dioctyl hydrogen phosphate (DiOHP) in the presence and absence of polystyrene (PS). The surface resistivity of ABS plates coated with DiOHP‐doped PANI in the presence and absence of PS were 5.3 × 10⁷ and 3.0 × 10⁵ Ω, respectively. The ABS plates coated with DiOHP‐doped PoAN and ‐doped POT showed higher resistivities (4.2 × 10⁹ and 2.4 × 10⁷ Ω, respectively) than that with DiOHP‐doped PANI. Although the conductivity of the coated ABS with DiOHP‐doped PANI was less in the presence of PS, the permanency and uniformity of the coating, which are very important for practical use, were much improved. Coatings and the coated ABS were characterized by X‐ray diffraction, TG/MS, SEM, and reduced viscosity measurements. © 2001 John Wiley & Sons, Inc. J Appl Polym Sci 81: 2661–2669, 2001     

Optoelectronic performances on different structures of Al‐doped ZnO

ZnO films and Al‐doped ZnO (AZO) films were deposited on p‐Si substrate by magnetron sputtering to investigate its chemical composition, structural and photoelectric properties. XRD and FTIR show that Al ions can enter into the substitutional and interstitial site of ZnO crystal, and O atoms in AZO films are more abundant. Three different structures of Al‐doped ZnO (substitutional Al, interstitial Al, and O‐rich Al‐doped ZnO) were built using first‐principles method based on experimental results, charge density difference, and density of States (DOS) illustrate that there are strong ionic interactions between Al and O atoms in substitutional Al‐doped ZnO, moreover, substitutional and interstitial Al doping both are beneficial to N type, but oxygen‐enriched ZnO is not conducive to N type. Furthermore, the optical properties of 3 different Al‐doped ZnO structures were investigated respectively. Compared with pure ZnO, the real and imaginary part of dielectric function of O‐rich and interstitial Al have a significant increase and move to lower energy (red shift), the reflectivity of O‐rich is 3 times of pure ZnO and substitutional Al‐doped ZnO. The results are hoped to be helpful to study AZO thin film and predict the properties of Al‐doped ZnO.     

单掺杂ESB电解质与双掺杂DWSB电解质的性能比较

本实验通过双掺杂氧化镝和氧化钨于氧化铋与单掺杂氧化铒于氧化铋所制成的两种电解质进行对比。利用粉末X射线衍射对合成材料进行相分析,利用交流阻抗谱方法测试、计算试样的电导率。研究结果表明,烧结温度选取在800℃时,ESB电解质的结晶度要比DWSB电解质的结晶度要好,并且双掺杂DWSB电解质的晶格常数明显比单掺杂ESB电解质的晶格常数要大。与单掺杂的ESB、DSB、WSB电解质相比,双掺杂的DWSB电解质其结构与δ-Bi2O3的内在结构更加的相近,致使双掺杂的电解质要比单掺杂的电解质的电导率要高。     

掺杂改性TiO2可见光光催化剂研究的最新进展

纳米TiO2在紫外光照射下具有良好的光催化活性,在环境污染物治理方面具有重要的应用前景。为提高TiO2对可见光的吸收,常常需要对TiO2进行掺杂改性以缩小其禁带宽度。本文综述了近些年来国内外在金属掺杂、非金属掺杂、金属-金属共掺杂、金属-非金属共掺杂、非金属-非金属共掺杂以及杂多酸盐掺杂改性TiO2光催化剂方面的最新进展,并对TiO2可见光光催化剂的研究进行了展望。     

混合材对硫铝酸盐水泥性能的影响研究*

通过矿渣,粉煤灰和石灰石三种混合材料的单掺、复掺,研究了混合材料对硫铝酸盐水泥性能的影响。研究结果表明,混合材料能够实现对硫铝酸盐水泥的改性,且复掺效果优于单掺;其机理主要是改变了钙矾石的形貌、降低了浆体的膨胀率、密实了浆体结构和减少了硬化浆体的微裂纹。     

La3+掺杂TiO2光催化性能研究

采用溶胶-凝胶法制备了La^3＋／TiO2光催化剂,研究了该催化剂对亚甲基蓝的光催化降解效果。结果表明,La^3＋掺杂量（摩尔分数）2．8％、催化剂用量1．2g／L、体系pH值为11时,12mg／L亚甲基蓝溶液经2h光催化降解,其降解率可达99．1％。与纯TiO2相比,La^3＋/TiO2光催化剂显示出良好的光催化活性。     

不同烷氧基钬掺杂增韧聚苯乙烯的研究

采用四种烷氧基钬化合物掺杂和苯乙烯本体聚合制备了不同掺钬聚苯乙烯材料，XPS测试表明掺杂聚苯乙烯中存在着钬离子和聚苯乙烯大分子苯环π电子之间存在配位作用。SEM照片和DMTA的数据探讨烷氧基钬增韧聚苯乙烯的作用机理，并讨论不同链长的烷氧基对聚苯乙炮的增韧作用影响，表明掺钬聚苯乙烯的冲击强度显著提高，表明烷氧基钬对聚苯乙烯有明显的增韧改性作用。     

Catalytic hydrogenation of CO over the doped perovskite oxide YBa2Cu3O7-x catalysts

Perovskite oxide structured YBa₂Cu₃O₇-x(YBCO) has been first prepared by carbonate precipitation and then modified with palladium or ruthenium by impregnation on the perovskite oxide, while cobalt was co-precipitated simultaneously in the same pH range with perovskite oxide. After characterization the catalysts were used in the temperature range 300–450°C, in the pressure range 1–9 atmospheres and for H₂/CO ratios in the range 1–4 in a differential plug flow reactor for the hydrogenation of carbon monoxide to give hydrocarbons. The perovskite oxide (YBCO) 20% (w/w) and doped 2% (w/w) cobalt oxide catalyst were prepared by the wet chemical method from their nitrate solutions and oxidized at 950°C. Perovskite oxide (Dursun, G. & Winterbottom, J. M., J. Chem. Technol Biotechnol. 63 (1995) 113–16) was also doped with palladium and ruthenium metal by impregnation followed by oxidation at 250°C. The catalysts prepared were characterized by using TemperatureProgrammed Reduction (TPR) to observe the reduction temperature and also to measure total and metal surface area. The modified perovskite oxide on alumina, ruthenium- and cobalt-doped catalysts, has been shown to give a better conversion and also selectivity towards saturated hydrocarbons compared with palladium-doped catalyst. The temperature effect of these catalysts is more consistent, giving a steady increase of conversion with increasing temperature. Although increase of pressure increases the conversion, it causes very little change in product distribution. The activation energy of palladium- and ruthenium-doped, and cobalt co-precipitated catalysts for the reaction has been measured to be 55 kJ mol⁻¹, 75 kJ mol⁻¹ and 50 kJ mol⁻¹ respectively. A general rate equation of the form r=k[H₂]^m[CO]ⁿ has been observed and found to be applicable at the pressures and temperatures used for the catalytic system studied and found to be m≌1·0 for palladium-doped, m≌1·2 for ruthenium-doped and m≌0·95 for cobalt co-precipitated catalysts as n becomes zero or negligibly less than zero. The mechanism of reaction to produce hydrocarbons from syngas has been deduced from the results. It appeared that the carbon monoxide insertion mechanism has been more evident for palladium-doped catalysts whereas the carbide mechanism plays the main role for the ruthenium-doped and cobalt co-precipitated catalysts. © 1998 Society of Chemical Industry     

Synthesis of boron and nitrogen-doped expanded graphite as efficient reinforcement for Al2O3-C refractories

Boron and nitrogen doped expanded graphite (B-doped EG & N-doped EG) were synthesized for the first time by annealing the mixtures, obtained from the suspensions of expanded graphite (EG) with boric acid and urea, respectively. Afterwards, the doped EG were introduced into Al₂O₃-C refractories by partially replacing the graphite flake. Synthesized materials were characterized using SEM-EDS, XPS, XRD, TG-DSC and Raman Spectroscopy. Also, evaluation of various mechanical properties and oxidation resistance tests were conducted. Boron (B) and Nitrogen (N) were successfully introduced into the C skeleton via different C-B bonds (B4C, B-sub-C and BC2O) and C-N bonds (pyridine-N, amino-N and graphitic-N) respectively, maintaining the hexagonal graphitic lattice and lower reactivity. Compared to as-received EG, the B-doped EG and N-doped EG remained relatively intact structure in Al₂O₃-C refractories at high temperature due to their less defects and lower reactivity. Addition of B-doped EG and N-doped EG into Al₂O₃-C refractories showed improved mechanical properties such as modulus of rupture (CMOR), force, displacement and thermal shock resistance. Besides, the Al₂O₃-C specimens containing B-doped EG and N-doped EG exhibited significantly better oxidation resistance, which further promote the reinforcement effect of doped EG in Al₂O₃-C refractories during actual service condition.