Microwave dielectric properties of ultra-low loss Li2MgTi0.7(Mg1/3Nb2/3)0.3O4 ceramics sintered at low temperature by LiF addition

In this work, ultra-low loss Li₂MgTi_0.7(Mg_1/3Nb_2/3)_0.3O₄ ceramics were successfully prepared via the conventional solid-state method. X-ray photoelectron spectroscopy (XPS), thermally stimulated depolarization current (TSDC) and bond energy were used to determine the distinction between intrinsic and extrinsic dielectric loss in (Mg_1/3Nb_2/3)⁴⁺ ions substituted ceramics. The addition of (Mg_1/3Nb_2/3)⁴⁺ ions enhances the bond energy in unit cell without changing the crystal structure of Li₂MgTiO₄, which results in high Q·f value as an intrinsic factor. The extrinsic factors such as porosity and grain size influence the dielectric loss at lower sintering temperature, while the oxygen vacancies play dominant role when the ceramics densified at 1400?°C. The Li₂MgTi_0.7(Mg_1/3Nb_2/3)_0.3O₄ ceramics sintered at 1400?°C can achieve an excellent combination of microwave dielectric properties: ε_r =?16.19, Q·f?=?160,000?GHz and τ_f =??3.14?ppm/°C. In addition, a certain amount of LiF can effectively lower the sintering temperature of the matrix, and the Li₂MgTi_0.7(Mg_1/3Nb_2/3)_0.3O₄-3?wt% LiF ceramics sintered at 1100?°C possess balanced properties with ε_r?=?16.32, Q·f?=?145,384?GHz and τ_f =??16.33?ppm/°C.     

Composition-dependent xBa(Zr0.2Ti0.8)O3-(1-x)(Ba0.7Ca0.3)TiO3 bulk ceramics for high energy storage applications

This work reports the composition dependent microstructure, dielectric, ferroelectric and energy storage properties, and the phase transitions sequence of lead free xBa(Zr_0.2Ti_0.8)O₃-(1-x)(Ba_0.7Ca_0.3)TiO₃ [xBZT-(1-x)BCT] ceramics, with x?=?0.4, 0.5 and 0.6, prepared by solid state reaction method. The XRD and Raman scattering results confirm the coexistence of rhombohedral and tetragonal phases at room temperature (RT). The temperature dependence of Raman scattering spectra, dielectric permittivity and polarization points a first phase transition from ferroelectric rhombohedral phase to ferroelectric tetragonal phase at a temperature (T_R-T) of 40?°C and a second phase transition from ferroelectric tetragonal phase - paraelectric pseudocubic phase at a temperature (T_T-C) of 110?°C. The dielectric analysis suggests that the phase transition at T_T-C is of diffusive type and the BZT-BCT ceramics are a relaxor type ferroelectric materials. The composition induced variation in the temperature dependence of dielectric losses was correlated with full width half maxima (FWHM) of A₁, E(LO) Raman mode. The saturation polarization (P_s) ≈8.3?μC/cm² and coercive fields ≈2.9?kV/cm were found to be optimum at composition x?=?0.6 and is attributed to grain size effect. It is also shown that BZT-BCT ceramics exhibit a fatigue free response up to 10⁵ cycles. The effect of a.c. electric field amplitude and temperature on energy storage density and storage efficiency is also discussed. The presence of high T_T-C (110?°C), a high dielectric constant (ε_r ≈?12,285) with low dielectric loss (0.03), good polarization (P_s ≈?8.3?μC/cm²) and large recoverable energy density (W?=?121?mJ/cm³) with an energy storage efficiency (η) of 70% at an electric field of 25?kV/cm in 0.6BZT-0.4BCT ceramics make them suitable candidates for energy storage capacitor applications.     

Structure stability,bond characteristics and microwave dielectric properties of co-substituted NdNbO4 ceramics

Structure-property relationship of co-substituted (Mg²⁺_1/4Mo⁶⁺_3/4)⁵⁺, (Al³⁺_1/3Mo⁶⁺_2/3)⁵⁺, (Si⁴⁺_1/2Mo⁶⁺_1/2)⁵⁺, (Zr⁴⁺_1/2Mo⁶⁺_1/2)⁵⁺ for Nb⁵⁺ in NdNbO₄ ceramics was investigated systematically. The remarkable differences in dielectric properties of each composition originated from their bond characteristics and structure stability. The elongated/compressed bonds have an effect on the cell volume and polarization. And the average bond covalency of Nb-O bond was responsible for the development of permittivity. Q×f values and the total lattice energy went up to maximum when (Si_0.5Mo_0.5) occupied Nb-site. Variations of lattice energy together with Nb-O bond energy suggest that a more stable structure was obtained through co-substitution. The optimal microwave dielectric properties is: ε_r =?18.97, Q×f?=?49466?GHz, τ_f =?7.34?ppm/°C for NdNb_0.97(Si_0.5Mo_0.5)_0.03O₄, sintered at 1250?°C.     

Dielectric stability in the relaxor: Na0.5Bi0.5TiO3-Ba0.8Ca0.2TiO3-Bi(Mg0.5Ti0.5)O3- NaNbO3 ceramic system

Ceramics with temperature-stable dielectric characteristics have been developed in the system: 0.6[0.85Na_0.5Bi_0.5TiO₃-(0.15-x)Ba_0.8Ca_0.2TiO₃-xBi(Mg_0.5Ti_0.5)O₃]?0.4NaNbO₃, x ≤ 0.15. Dielectric measurements exhibited relaxor ferroelectric characteristics with temperature-stable relative permittivity from ε_r~1330 ± 15% in the temperature range from ?70?°C to 215?°C and tanδ ≤ 0.02 from ?20?°C to 380?°C for x = 0 compositions. For the Bi(Mg_0.5Ti_0.5)O₃ modified compositions the temperature range of stable relative permittivity extended from ?70?°C to 400?°C, with ε_r ~ 950 ± 15% and tanδ ≤ 0.02 from ?70?°C to 260?°C. Values of dc resistivity were ~ 10⁸ Ω?m at a temperature of 300?°C and the corresponding RC constant values were in the range from 0.40 ? 0.78?s at 300?°C. All ceramic samples exhibited a linear polarisation-electric field response at maximum applied electric field of 5?kV/cm (1?kHz).     

Co2O3 substitution effects on the structure and microwave dielectric properties of low-firing (Zn0.9Mg0.1)TiO3 ceramics

Low-firing (Zn_0.9Mg_0.1)_1?xCo_xTiO₃ (x = 0.02–0.10) (ZMC_xT) microwave dielectric ceramics with high temperature stability were synthesized via conventional solid-state reaction. The influences of Co₂O₃ substitution on the phase composition, microstructure and microwave dielectric properties of ZMC_xT ceramics were discussed. Rietveld refinement results show the coexistence of ZnTiO₃ and ZnB₂O₄ phases at x = 0.02–0.10. (Zn_0.9Mg_0.1)_1?xCo_xTiO₃ ceramic with x = 0.06 (ZMC_0.06T) obtains the best combination microwave dielectric properties of: ε_r = 21.58, Q × f = 53,948 GHz, τ_f = ? 54.38 ppm/°C. For expanding its application in LTCC field, 3 wt% ZnO-B₂O₃-SiO₂ (ZBS) and 9 wt% TiO₂ was added into ZMC_0.06T ceramic, great microwave dielectric properties were achieved at 900 °C for 4 h: ε_r = 26.03, Q × f = 34,830 GHz, τ_f = ? 4 ppm/°C, making the composite ceramic a promising candidate for LTCC industry.     

Ultra-stable X9R type CaCu3-xZnxTi4.1O12 ceramics

CaCu_3-xZn_xTi_4.1O₁₂ (x?=?0.00, 0.05 and 0.10) precursor powders were prepared by the polymer pyrolysis (PP) solution method. Ultra-stable X9R type capacitor with very low loss tangent (tanδ) ~0.017 varied within a value of less than 0.05 in a wide temperature range of ?60 to 150?°C and high dielectric constants (ε^′) ~9200 with Δε′ ≤?±?15% in a wide temperature range of ?60 to 210?°C was achieved in CaCu_2.95Zn_0.05Ti_4.1O₁₂ (Zn05-1) ceramic obtained by sintering the precursor powder (x?=?0.05) at 1060?°C for 8?h. A major role for the validity of ε^′ and tanδ in these wider temperature ranges was suggested to originated from the very high grain boundary resistance (R_gb ~413,190?Ω?cm), resulting from the effect of Zn²⁺ doping and TiO₂-rich at grain boundary. With the excellent dielectric properties of (Zn05-1) ceramic, it was suggested to be applied for X8R and X9R capacitors. Interestingly, improvements of nonlinear properties with very high nonlinear coefficient (α ~ 25.94) and breakdown field (E_b~ 3146.25?V.cm^?1) values were achieved in (Zn05-1) ceramic, as well.     

Crystal structure,microwave dielectric properties and low temperature sintering of (Al0.5Nb0.5)4+ co-substitution for Ti4+ of LiNb0.6Ti0.5O3 ceramics

The phase composition, microstructure, microwave dielectric properties of (Al_0.5Nb_0.5)⁴⁺ co-substitution for Ti site in LiNb_0.6Ti_0.5O₃ ceramics and the low temperature sintering behaviors of Li₂O-B₂O₃-SiO₂ (LBS) glass were systematically discussed. XRD patterns and EDS analysis result confirmed that single phase of Li_1.075Nb_0.625Ti_0.45O₃ solid solution was formed in all component. The increase of dielectric constant (ε_r) is ascribed to the improvement of bulk density. The restricted growth of grain has a negative influence on quality factor (Q×f) value. The τ_f value could be continuously shifted to near zero as the doping content increases. Great microwave dielectric properties were obtained in LiNb_0.6Ti_(0.5-x)(Al_0.5Nb_0.5)_xO₃ ceramics (x?=?0.10) when sintered at 1100?℃ for 2?h: ε_r =?70.34, Q×f =?5144?GHz, τ_f =?4.8?ppm/℃. The sintering aid, LBS glass, can effectively reduce the temperature and remain satisfied microwave performance. Excellent microwave dielectric properties for x?=?0.10 were obtained with 1.0?wt% glass: ε_r =?70.16, Q×f =?4153?GHz (at 4?GHz), τ_f =?-0.65?ppm/℃ when sintered at 925?℃ for 2?h.     

Thermoelectric properties of Bi2O3-added WO3 ceramics

Tungsten trioxide (WO₃) ceramics were prepared by firing Bi₂O₃-added WO₃ compacts with atomic ratios of Bi/W?=?0.00, 0.01, 0.03, or 0.05, in which Bi₂O₃ was mixed as a sintering agent. Dense ceramics consisting of remarkably grown WO₃ grains were obtained for Bi-containing samples with Bi/W?=?0.01, 0.03, and 0.05. The grain growth was enhanced by the liquid phase of Bi₂W₂O₉ formed among the WO₃ grains while firing. The XRD patterns did not show evidence for Bi inclusion into the WO₃ lattice, but the SEM-EDX showed an intensive distribution of Bi into the grain boundaries. Electrical conductivity σ and Seebeck coefficient S were measured in a temperature range of 373–1073?K. The temperature dependences indicated that the Bi₂O₃-added WO₃ ceramics were n-type semiconductors. It was considered that the electron carriers were generated from oxygen vacancies included into the WO₃ grains. The thermoelectric power factors S²σ for the ceramics ranged from 1.5?×?10^?7 W?m^?1 K^?2 to 2.8?×?10^?5 W?m^?1 K^?2, and the highest value occurred at 970?K for the ceramic with Bi/W?=?0.01.     

Higher permittivity of Ni-doped lead zirconate titanate,Pb[(Zr0.52Ti0.48)(1-x) Nix]O3, ceramics

The paper reports highest obtained dielectric constant for Ni-doped Lead Zirconate Titanate [PZT, Pb(Zr_0.52Ti_0.48)O₃] ceramics. The Ni-doped PZT ceramic pellets were prepared via conventional solid-state reaction method with Ni content chosen in the range 0–20?at%. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy were employed to investigate the crystal structure of the prepared ceramics. The X-ray diffraction analysis indicated that the ceramic pellets had crystallized into tetragonal perovskite structure. A minute displacement of XRD peaks was detected in the diffraction spectra of Ni-doped PZT ceramic samples which when examined by size-strain plot (SSP) method revealed presence of homogenous strain that decreased with increase in concentration of Ni. In FTIR the maximum absorption at 597?cm^?1, 608?cm^?1, 611?cm^?1, 605 and 613?cm^?1 for Ni?=?0, 5, 10, 15 and 20?at%, respectively, confirmed the formation of perovskite structure in all the compositions and the slight shift suggests decrease in cell size on doping. The values of dielectric constant (ε′) & tanδ as a function of frequency and temperature were measured for the prepared ceramics and it revealed highest ever reported dielectric constant for Ni - doped PZT with Ni?=?5?at%. The dielectric variation with temperature exhibited a diffused type ferroelectric–paraelectric phase transition for the doped samples. Also, the maximum dielectric constant value (ε′_max) decreased while the phase transition temperature increased with increase in doping concentration of Ni. The estimated activation energy of different compositions was found to increase from 0.057 to 0.068?eV for x?=?0.00 to x?=?0.20 in ferroelectric phase. The piezoelectric, ferroelectric and magnetic properties were also investigated.     

Correlations between the structural characteristics and enhanced microwave dielectric properties of V–modified Li3Mg2NbO6 ceramics

Novel low-temperature fired Li₃Mg₂Nb_1-xV_xO₆ (x?=?0.02??0.08) microwave dielectric ceramics were synthetized by the partial substitution of V⁵⁺ ions on the Nb⁵⁺ sites. The effects of V⁵⁺ substitution on structure and microwave dielectric properties were investigated in detail. XRD patterns and Rietveld refinement demonstrated that all of the samples exhibited a single orthorhombic structure. The structural characteristics such as the polarizability, packing fraction and NbO₆ octahedron distortion were determined to establish the correlations between the structure and the microwave dielectric characteristics. The ?_r values presented a tendency similar to that of the polarizability. The high Q×f values were mainly attributed to the effects of the grain sizes and density rather than the packing fraction. The variation in the τ_f values was attributed to NbO₆ octahedron distortion. Notably, the Li₃Mg₂Nb_1-xV_xO₆ (x?=?0.02) ceramics sintered at 900?°C had outstanding microwave dielectric properties: ε_r=?16, Q×f=?131,000?GHz (9.63?GHz), and τ_f=???26?ppm/°C, making these ceramics promising ultralow loss candidates for low temperature co-fired ceramics (LTCC) applications.     

Phase composition,Raman spectra,infrared spectra and dielectric properties of Li2MgTi1-x(Mg1/3Nb2/3)xO4 ceramics at microwave frequency

The Li₂MgTi_1-x(Mg_1/3Nb_2/3)_xO₄ (0?≤x?≤?0.5) ceramics were prepared by the conventional solid-state method. The relationship among phase composition, substitution amount and microwave dielectric properties of the ceramics was symmetrically investigated. All the samples possess the rock salt structure with the space group of Fm-3m. As the x value increases from 0 to 0.5, the dielectric constant linearly decreases from 16.75 to 15.56, which can be explained by the variation of Raman spectra and infrared spectra. The Q·f value shows an upward tendency in the range of 0?≤x?≤?0.3, but it then decreases when x?>?0.3. In addition, the temperature coefficient of resonant frequency (τ_f) is shifted toward zero with the increasing (Mg_1/3Nb_2/3)⁴⁺ addition. By comparison, the Li₂MgTi_0.7(Mg_1/3Nb_2/3)_0.3O₄ ceramics sintered at 1400?°C can achieve an excellent combination of microwave dielectric properties: ε_r=?16.19, Q·f =?160,000?GHz and τ_f =??3.14?ppm/°C.     

Reduced dielectric loss and high piezoelectric constant in Ce and Mn co-doped BiScO3-PbCexTi1-xO3-Bi(Zn0.5Ti0.5)O3 ceramics

MnO₂-doped 0.99(0.36BiScO₃-0.64PbTi_1-xCe_xO₃)-0.01Bi(Zn_0.5Ti_0.5)O₃ (BS-PTC-BZT-MnO₂) ceramics are fabricated by the solid-state method. Here, it's firstly reported that Ce element can reduce dielectric loss (tan δ) and suppress the decrease of piezoelectric constant (d₃₃) simultaneously. Effects of Ce contents on the structure and electrical properties of BS-PTC-BZT-MnO₂ ceramics are studied. The ceramics (x?=?0.02) with MPB (rhombohedral-tetragonal) possess low dielectric loss (tan δ?=?1.36%, 1?kHz) and high piezoelectric constant (d₃₃ =?360 pC/N) simultaneously, which is superior to most reported BS-PT. Besides, excellent comprehensive properties including high Curie temperature (T_C =?422?°C), large dielectric constant (?_r =?1324), and high remnant polarization (P_r =?35.1?µC/cm²) are obtained. Asymmetric S-E and P-E hysteresis loops indicate that defects and oxygen vacancies are induced by multi-valence elements (Ce and Mn), which is the origin for reducing tan δ. In addition, good thermal stability of piezoelectric and dielectric properties is observed. These results indicate that Ce and Mn co-doped BS-PTC-BZT-MnO₂ ceramics can be well applied as power electronic devices under high temperature.     

Synthesis and thermal expansion behaviors of spin-coated Sc2Mo3O12 thin films

Orthorhombic Sc₂Mo₃O₁₂ films have been successfully prepared via spin coating technique followed by annealing at 500–750 °C. The phase composition, microstructure, morphology and negative thermal behavior of the synthesized Sc₂Mo₃O₁₂ films were investigated. XRD and XPS analysis indicate that as-deposited film is amorphous. Orthorhombic Sc₂Mo₃O₁₂ films can be prepared after post-annealing at 500–750 °C for 1 h. The crystallinity of Sc₂Mo₃O₁₂ films gradually improved with the increase of post-annealing temperature. SEM analysis shows as-deposited film is smooth and compact, and the grain size of Sc₂Mo₃O₁₂ film grows up as the post-annealing temperature increases. Variable temperature XRD analysis demonstrates that the synthesized orthorhombic Sc₂Mo₃O₁₂ films show stable thermo-chemical and anisotropic NTE property in 25–700 °C. The corresponding coefficients of thermal expansion (CTEs) of the orthorhombic Sc₂Mo₃O₁₂ film in a, b and c directions are ?6.68 × 10^?6 °C^?1, 5.08 × 10^?6 °C^?1 and ?4.76 × 10^?6 °C^?1, respectively. The whole unit cell of the orthorhombic Sc₂Mo₃O₁₂ film shrinks and the volumetric CTE of the Sc₂Mo₃O₁₂ thin film is ?6.36 × 10^?6 °C^?1, and the linear CTE is about ?2.12 × 10^?6 °C^?1 (α_v = 3α_l).     

Effect of Mn-doping on the structure and electrical properties of (Pb0.325Sr0.675)TiO3 ceramics

Pb_0.325Sr_0.675Ti_1-xMn_xO₃ ceramics (x?=?0, 0.001, 0.005, 0.01, and 0.05) were successfully prepared by traditional solid-state reaction method. It was found that the lattice constant calculated through Rietveld refinement initially increased and then decreased with increasing Mn content, which was attributed to the variation in valence state of Mn and Ti ions. The microstructure gradually varied from the coexistence of large grains and fine grains for x?=?0 to the uniform grain for x?=?0.05 by increasing the doping Mn ions. With increasing Mn content from x?=?0 to x?=?0.05, the Curie temperature (Tc) dramatically decreased from 25?°C to ??40?°C and dielectric maximum decreased from 27,100 to 13,200. Pb_0.325Sr_0.675Ti_1-xMn_xO₃ ceramics with x?=?0.001 showed the lowest dielectric loss of 0.006 with a relatively high dielectric peak value of ~ 21,000. The grain boundaries resistance obtained from the complex impedance decreased with the increase of Mn content. The decrease in resistance was ascribed to oxygen vacancies and electronics produced by the change of ionic valence state. X-ray photoemission spectroscopy revealed that Ti ions were Ti⁴⁺ and the valences of Mn ions were deduced to be mainly in the form of Mn²⁺ and/or Mn³⁺ for ceramics with low content of Mn, while the Ti ions were in the form of Ti³⁺ and Ti⁴⁺ and Mn ions were diverse valence states with the coexistence of Mn²⁺, Mn³⁺, and Mn⁴⁺ for ceramics with x?=?0.01 and 0.05.     

Crystallization behaviour and properties of BaO-CaO-B2O3-SiO2 glasses and glass-ceramics for LTCC applications

The influence of BaO content (up to 15?mol%) on the crystallization behaviour, structure, thermal properties and microwave dielectric properties of the BaO-CaO-B₂O₃-SiO₂ glasses and glass-ceramics system was investigated. The glasses were produced by melting at 1400?°C and quenching into water, and the glass-ceramics were produced via heat treatment at temperatures between 750 and 800?°C. The results of X-ray diffraction analysis showed that increasing the BaO content raised the resistance of the glass against crystallization and favoured the transformation of β-CaSiO₃ and α-CaSiO₃ phases, which crystallized in the Ba-free and in low BaO content compositions, into SiO₂ and Ba₄Si₆O₁₆, which crystallized in compositions with higher concentrations of BaO. The BaO content had little influence on the glass transition temperature (T_g) and the linear coefficient of thermal expansion (CTE), but strongly reduced the softening point (T_s). Even the addition of BaO as minor additives resulted in a dramatic reduction of the T_s; for example, the T_s decreased from 902?°C for the Ba-free composition to 682?°C for the BaO-containing one (5%). Low values of the dielectric constant (5.9?≤?ε_r ≤?6.63) and dielectric loss (1.12?×?10^?3 ≤?tanδ?≤?3.15?×?10^?3) were measured.     

Low temperature sintering and microwave dielectric properties of Zn1.8SiO3.8 ceramics with BaCu(B2O5) additive for LTCC applications

The Zn_1.8SiO_3.8 (ZS) ceramics with BaCu(B₂O₅) (BCB) additive were synthesized by the conventional solid-state reaction route and the effect of BCB additive on the microwave dielectric properties of the ceramics was investigated. The results demonstrate that BCB could effectively decrease the sintering temperature from 1300?°C to 930?°C and does not induce obviously degradation of the microwave dielectric properties. The 6.wt% BCB added ZS ceramics exhibited a low sintering temperature (~ 930?°C) and excellent dielectric properties of ε_r =?6.79, Q×f =?33,648?GHz, and τ_f =??30?ppm/°C. To compensate the negative τ_f value of this system, TiO₂ powders were introduced. Particularly when 10.wt% TiO₂ was added, good microwave dielectric properties of ε_r=?8.175, Q×f=?21,252?GHz, and τ_f =?1.2?ppm/°C were obtained for the 6.wt% BCB added ZS ceramic sintered at 930?°C for 3?h. Moreover, BCB added ZS-TiO₂ ceramics have a chemical compatibility with silver, which indicate that the BCB added ZS ceramics are promising candidate for LTCC applications.     

Tailoring structural and electrical properties of A-site nonstoichiometric Na0.5Bi0.5(Ti0.97Ni0.03)O3 ferroelectric films deposited on LaNiO3(100)/Si substrate

Highly (l00)-oriented Ni-doped Na_0.5Bi_0.5TiO₃ (NBTNi) thin films with different A-site cation nonstoichiometry were deposited on the LaNiO₃ (100)/Si substrates. We find that low levels of Na/Bi nonstoichiometry in the original composition of NBTNi films have obvious influence on the crystal structure and ferro-/dielectric properties. Na deficiency or Bi excess can lower the leakage current compared to the stoichiometric sample due to the decreased oxide-site vacancies. However, the mechanisms for the two types of films are different. That is, the mobile oxygen vacancies are tied by the Na vacancies in Na deficiency film whereas the formation of oxygen vacancies is suppressed for Bi-rich film. A good combination of ferroelectric property (P_r = 22.7?μC/cm²) and dielectric property (ε_r = 360 and tan?δ?=?0.11) can be achieved in Bi-rich NBTNi (Na_0.5Bi_0.54TNi) film. Besides, the effect of voltage and frequency on the capacitance and dielectric tunability for the Na_0.5Bi_0.54TNi film is investigated solely. These results show that NBT-based thin film is quite flexible in A-site nonstoichiometry, which provides a broad space for performance improvement.     

Preparation of dense 0.9Al2O3−0.1TiO2 ceramics with highly improved microwave dielectric properties by a noncontaminated DCC method

In this paper, dense 0.9Al₂O₃ ??0.1TiO₂ ceramics with highly improved microwave dielectric properties were prepared by a noncontaminated direct coagulation casting (DCC) method. The suspension was destabilized and coagulated by consumption of the dispersant without introducing impurity ions. The effect of dispersant content, pH value and solid loading on the rheological properties of 0.9Al₂O₃ ??0.1TiO₂ suspension was investigated. It was found that 0.9Al₂O₃ ??0.1TiO₂ suspension with a high solid loading of 50?vol% and low viscosity of 0.7?Pa?s could be prepared by adding 0.5?wt% TMAOH at the pH in the range of 10–12. The suspension was coagulated by adding 2?vol% GDA when it was treated at 60 ~ 80?°C for 40 ~ 60?min. Compared with dry pressing method, more homogeneous and denser microstructure could be obtained in 0.9A1₂O₃ ??0.1TiO₂ ceramics prepared by DCC via dispersant reaction which were sintered at 1550?°C for 3?h and annealed at 1100?°C for 5?h. The Al₂TiO₅ second phase in 0.9A1₂O₃ ??0.1TiO₂ ceramics prepared by DCC via dispersant reaction could be eliminated more easily by annealing treatment. After annealing treatment, only Al₂O₃ and TiO₂ phases could be detected. Therefore, higher density and much better microwave dielectric properties with ρ?=? 3.81?±?0.02?g/cm³, ε_r =?12.17?±?0.02, Q ×?f =?25,637?±?749?GHz, τ_f =?13.12?±?1.62?ppm/°C were obtained by DCC via dispersant reaction, and the Q ×?f value almost improved by 25%. Without introducing impurity ions, it provides a new insight into preparing complex shaped function ceramics with high properties.     

Effects of Li2O-B2O3-SiO2 glass on the low-temperature sintering of Zn0.15Nb0.3Ti0.55O2 ceramics

The influences of Li₂O-B₂O₃-SiO₂ glass (LBS) on the activation energy, phase composition, the stability of the structure and microwave dielectric properties of Zn_0.15Nb_0.3Ti_0.55O₂ ceramics have been systematically investigated. LBS glass acted as flux former and contributed to the reactive liquid-phase sintering mechanism, which remarkably lowed the sintering temperature from 1150?°C to 900?°C and enhanced the shrinkage and densification of ceramic at the low sintering temperatures. The ceramics with 1.5?wt% LBS glass sintered at 900?°C for 3?h show great properties: ε_r = 73.59, Q × f = 8024?GHz, τ_f = 270.54?ppm/°C.     

Microwave dielectric ceramics in (Mg1/3Sb2/3)O2-ZrO2-TiO2 system with near zero τf and low loss in a very wide range

A series of (ZrTi)_1-x(Mg_1/3Sb_2/3)_2xO₄ (0.04?≤?x?≤?0.36) ceramics were successfully synthesized through the conventional solid-state processing. Appropriate content of CuO was added as sintering aids to promote the density of ceramics. The XRD analysis revealed that the main crystalline phase of ceramics sintered at optimal temperature belonged to α-PbO₂-type structure. Raman spectroscopy and far infrared reflectivity (FIR) spectra were employed to study the phonon modes of ceramics, which explained the relationship between microwave dielectric properties and structure. It is interesting that the τ_f are near-zero (+6.6 ~ ?4.6?ppm/°C) and meanwhile the Q×f are relatively high (29,000–41,800?GHz) for samples with x in a very wide range of 0.10–0.36. In this range, their dielectric constants (ε_r) can be adjustable from 35.4 to 24.4. The results demonstrated this ceramic system is a potential candidate for microwave dielectric applications requiring an adjustable dielectric constants and near zero τ_f.