Influence of K0.5Bi0.5TiO3 on the structure,dielectric and ferroelectric properties of (Ba,Ca)(Zr,Ti)O3 ceramics

A new lead-free ferroelectric solid solution between (Ba,Ca)(Zr,Ti)O₃ (BCZT) and K_0.5Bi_0.5TiO₃ (KBT) has been systematically investigated in terms of its phase transformations, microstructure, dielectric and ferroelectric properties. The incorporation of KBT into BCZT was found to enhance the sintering behavior, although secondary phases of K₄Ti₃O₈ and BaBi₄Ti₄O₁₅ were detected at high KBT contents. Chemical heterogeneity was also observed in the form of core-shell grain structures comprising tetragonal ferroelectric BCZT-rich cores with pseudo-cubic relaxor ferroelectric KBT-rich shell regions. Temperature-dependent dielectric property measurements revealed that the BCZT-KBT ceramics exhibited both normal and relaxor ferroelectric behaviour simultaneously, associated directly with the core-shell structure. Ferroelectric hysteresis measurements indicated that the remanent polarisation and coercive field were strongly dependent on KBT content. In common with other lead-free relaxor ferroelectrics, increasing temperature led to the formation of constricted polarisation-electric field hysteresis loops, indicating the occurrence of a reversible electric field-induced nanopolar to long-range ordered ferroelectric state.     

Effect of closed pores on dielectric properties of 0.8Na0.5Bi0.5TiO3-0.2K0.5Bi0.5TiO3 porous ceramics

Porous 0.8Na_0.5Bi_0.5TiO₃-0.2K_0.5Bi_0.5TiO₃ ceramics are fabricated via the pore-forming agent method with polymethyl methacrylate (PMMA) and stearic acid (SA) as pore forming agents, and microstructure observations demonstrate that the porosity, pore shape, and pore sizes can be controlled by the synthesis technology. The dielectric properties of porous ceramics are found not only correlated to the pore-matrix composite model, but also have a significant grain-size effect. Based on the Zener Theory, pining forces exerted by pores on the grain boundary are calculated, to explain the shape effect of pores on grain boundary migration. A phase-field simulation is carried out to investigate pore shape effect on the grain size regulation in porous polycrystalline, and simulation results are in good agreements with experiential results as well as theoretical calculations. Thus, a modified equation is proposed to predict the effective permittivity of the porous piezoelectric ceramics by considering effects of porosity, pore shape and grain size.     

Structure and ferroelectric behaviour of Na0.5Bi0.5TiO3-KNbO3 ceramics

Lead-free piezoelectric ceramics, (1?x)Na_0.5Bi_0.5TiO₃-xKNbO₃ (NBT-xKN), with x?=?0.02–0.08 were fabricated by solid-state reaction and sintering. The crystal structures and dielectric properties were measured for different KN contents. All compositions in the unpoled, as-sintered state were found to be single-phase pseudo-cubic. However, typical ferroelectric behaviour, with well-saturated polarisation-electric field hysteresis loops, was observed for certain compositions at high electric field levels. It is shown using high-energy synchrotron X-ray diffraction that the application of the electric field induced an irreversible structural transformation from the nano-polar pseudo-cubic phase to a ferroelectric rhombohedral phase. The changes in lattice elastic strain and crystallographic texture of a poled NBT-0.02KN specimen as a function of the grain orientation, ψ, conform well to those expected for a conventional rhombohedrally distorted perovskite ferroelectric ceramic. The dielectric permittivity-temperature relationships for all compositions exhibit two transition temperatures and a frequency-dependent behaviour that is typical of a relaxor ferroelectric. The transition temperatures and grain size decrease with the increasing KN content.     

Pyroelectric,ferroelectric, piezoelectric and dielectric properties of Na0.5Bi0.5TiO3 ceramic prepared by sol-gel method

Sodium bismuth titanate (BNT) nanopowder of molar composition 50/50 (Na_0.5Bi_0.5TiO₃) was prepared by a sol-gel processing method. The structure and microstructure of the precursor gel as well as the ferroelectric, pyroelectric, dielectric and piezoelectric properties of the BNT were studied. BNT crystallized in the rhombohedra perovskites structure Na_0.5Bi_0.5TiO₃ was obtained from the precursor gel by heating at 700 °C for 2 h in air. The BNT ceramic at 1100 °C sintering temperature present high crystallinity, good dielectric properties at 1 kHz (ε′=885, tan δ=0.03, T_c=370 °C), piezoelectric properties (k₃₃=0.39, c₃₃=105 GPa, e₃₃=12.6 C/m², d₃₃=120 pC/N), high remnant polarization (P_r=47 μC/cm²) and pyroelectric coefficient ($p$=707 μC/m² K) and low coercive field (E_c=55 kV/cm). Hence, the BNT prepared by sol-gel method could be used for silicon based memory device application where a low synthesis temperature is a key requirement.     

Enhanced pyroelectric response from domain-engineered lead-free (K0.5Bi0.5TiO3-BaTiO3)-Na0.5Bi0.5TiO3 ferroelectric ceramics

Enhanced pyroelectric response is achieved via domain engineering from [001] grain-oriented, tetragonal-phase, lead-free 0.2(2/3K_0.5Bi_0.5TiO₃-1/3BaTiO₃)-0.8Na_0.5Bi_0.5TiO₃ (KBT-BT-NBT) ceramics prepared by a templated grain growth method. The [001] crystallographic orientation leads to large polarization in tetragonal symmetry; therefore, texturing along this direction is employed to enhance the pyroelectricity. X-ray diffraction analysis revealed a Lotgering factor (degree of texturing) of 93 % along the [001] crystallographic direction. The textured KBT-BT-NBT lead-free ceramics showed comparable pyroelectric figures of merit to those of lead-based ferroelectric materials at room temperature (RT). In addition to the enhanced pyroelectric response at RT, an enormous enhancement in the pyroelectric response (from 1750 to 90,900 μC m^?2 K^?1) was achieved at the depolarization temperature because of the sharp ferroelectric to antiferroelectric phase transition owing to coherent 180° domain switching. These results will motivate the development of a wide range of lead-free pyroelectric devices, such as thermal sensors and infra-red detectors.     

Electrical properties and relaxor phase evolution of Nb-Modified Bi0.5Na0.5TiO3-Bi0.5K0.5TiO3-SrTiO3 lead-free ceramics

In this work, the crystalline phase, domain structure, and electrical properties of [Bi_0.5(Na_0.84K_0.16)_0.5]_0.96Sr_0.04Ti_1-xNb_xO₃ (x = 0.010–0.030) ceramics are investigated. Increasing the Nb content induces the phase transition from coexistent rhombohedral and tetragonal phases to a single pseudo-cubic phase, and the lamellar ferroelectric domains evolve into polar nanoregions. Decreased ferroelectric-to-relaxor transition temperature and enhanced frequency dispersion are found in the temperature-dependent dielectric constant and loss, implying a transition from the non-ergodic to ergodic relaxor state. The Nb substitution significantly degrades the long-range ferroelectric order with sharply decreased piezoelectric coefficients from ? 140 to ? 1 pC/N. However, a large strain of 0.32% at 5 kV/mm (normalized strain of 640 pm/V) is obtained around the critical composition of x = 0.0225. The composition of x = 0.030 shows good temperature insensitivity of the strain response, characterized by 308 pm/V with less than 15% reduction from 25 °C to 125 °C.     

Influences of secondary phases on ferroelectric properties of Bi(Na,K)TiO3 ceramics

The effect of secondary phases on ferroelectric properties of Bi_0.5(Na_0.8K_0.2)_0.5TiO₃ (BNKT) is studied. Ceramic powders are prepared by the solid-state reaction method where the influence of different sintering temperatures is also studied. Then, samples are characterized by X-ray diffraction (XRD), Raman microspectroscopy, Scanning Electron Microscopy and impedance spectroscopy. Through XRD and Raman results, the perovskite structure is detected; together with small peaks corresponding to a secondary phase associated with a K_2−xNa_xTi₆O₁₃-based phase. The secondary phases amount increases with the sintering temperature, yielding different combinations of K_2−xNa_xTi₆O₁₃- and Bi_0.5(Na_1−yK_y)_0.5TiO₃-based phases. Moreover, the content of the secondary phase improves the d₃₃ piezoelectric constant and dielectric properties of BNKT ceramics. These results can benefit the understanding of BNKT ceramics and the expanding of their applications range.     

High-temperature dielectric and relaxation behavior of Yb-doped Bi0.5Na0.5TiO3 ceramics

Microstructure, phase transition and dielectric properties of Yb-doped Bi_0.5Na_0.5TiO₃ (BNT) ceramics were investigated. It is found that ytterbium promotes the grain growth and densification of the ceramics while Ti-rich impurity appears due to the compensation of Ti-vacancy. The dielectric operational temperature range of the ceramics with a±15% tolerance was greatly broaden until 500 °C by ytterbium doping. Meanwhile, the diffuseness of the diffuse phase transition increases with the increase of doping Yb. BNT ceramics with 3 mol% Yb doping shows a near-plateau dielectric behavior in a broad temperature range from 147 to 528 °C and a low dielectric loss (<0.025) from 154 to 356 °C, indicating that it is a promising material for applications in high-temperature capacitor.     

Effect of La and Ni substitution on structure,dielectric and ferroelectric properties of BiFeO3 ceramics

In this communication, we present the results on Bi_1−xLa_xFe_1−yNi_yO₃ (x=0.0, 0.1; y=0.0, 0.05) samples processed by solid-state reaction route in order to study crystalline and electronic structure, dielectric and ferroelectric properties. The best refinement was achieved by choosing rhombohedral structure (R3c) for BiFeO₃ and Bi_0.9La_0.1FeO₃ samples. Whereas, the XRD pattern of BiFe_0.95Ni_0.05O₃ and Bi_0.9La_0.1Fe_0.95Ni_0.05O₃ samples were refined by choosing rhombohedral (R3c) and cubic (I23) structure. Raman scattering measurement infers nine Raman active phonon modes for all the as prepared samples. The substitution of Ni ion at Fe-site in BiFeO₃ essentially changes the modes position i.e. all the modes are observed to shift to lower wave number. Dielectric constant (ε′) and dielectric loss (tan δ) as a function of frequency have been investigated and they decreases with increasing frequency of the applied alternating field and become constant at high frequencies. This feature is a characteristic of Maxwell Wagner type of interfacial polarization. The remnant polarization (P_r) for Bi_0.9La_0.1FeO_3, BiFe_0.95Ni_0.05O₃, and Bi_0.9La_0.1Fe_0.95Ni_0.05O₃ are 0.08, 0.11, 0.69 μC/cm², respectively and the value of coercive field for Bi_0.9La_0.1FeO_3, BiFe_0.95Ni_0.05O₃, and Bi_0.9La_0.1Fe_0.95Ni_0.05O₃ are 0.53, 0.67, 0.68 kV/cm, respectively. X-ray absorption spectroscopy (XAS) experiments at Fe L₂,₃ and O K-edges are performed to investigate the electronic structure of well-characterized Bi_1−xLa_xFe_1−yNi_yO₃ (x=0.0, 0.1; y=0.0, 0.05) samples. The presence of reasonable ferroelectric polarization at room temperature in Bi_0.9La_0.1Fe_0.95Ni_0.05O₃ ceramics makes it suitable for technological applications.     

Highly-reliable dielectric capacitors with excellent comprehensive energy-storage properties using Bi0.5Na0.5TiO3-based relaxor ferroelectric ceramics

The development of capacitors with high reliability and good comprehensive performances is of great significance for practical applications. In this work, lead-free relaxor ferroelectric (FE) ceramics of (1-x)(0.5(Bi_0.5Na_0.5)TiO₃-0.5SrTiO₃)-xBi(Mg_2/3Nb_1/3)O₃ ((1-x)(BNT-ST)-xBMN) were prepared by a conventional solid-state reaction method. The introduction of BMN was found to enhance local structure disorder, leading to the significantly reduced size of FE nanodomains, which is responsible for the slim polarization-electric field hysteresis loops. A giant energy-storage density of 6.62 J/cm³ and a high efficiency of 82 % can be achieved simultaneously under a moderate electric field of 34 kV/mm at x = 0.08. It also exhibits high discharge density ～ 2.74 J/cm³, large power density ～ 248 MW/cm³ and ultrafast discharge rate ～ 28 ns at 20 kV/mm in addition to excellent temperature (10–130 °C) and frequency (1–100 Hz) stabilities. These results demonstrate that the (1-x)(BNT-ST)-xBMN ceramic system is a promising lead-free candidate for advanced pulsed power capacitor applications.     

Tailoring structural and electrical properties of A-site non-stoichiometric Na0.5Bi0.5TiO3 ceramic at different sintering temperature

Na/Bi stoichiometry plays crucial role in determining various properties of sodium bismuth titanate-based system. In this work, we have synthesised lead free (Na_0.5Bi_0.5)_1+x TiO₃ (x?=?0, 0.02 and 0.05) ceramics by sol-gel method and systematically presented structural, dielectric and ferroelectric properties at different sintering temperature. Single phase perovskite structure with rhombohedral symmetry (R3c) is obtained for all compositions from low (850°C) to maximum (1150°C) sintering temperature. The shifting of x-ray diffraction peaks and characteristic perovskite metal-oxide vibrational band (～627?cm^?1) in Fourier Transform Infra-red spectra suggests compression or expansion of crystal lattice with Na/Bi non-stoichiometry. Excess of Na/Bi comprises dense crystal growth as compared to pure Na_0.5Bi_0.5TiO₃ composition suggesting compensation of volatile elements loss during heat treatment whose impact has also been observed in dielectric as well as ferroelectric properties. It is observed that Na_0.51Bi_0.51TiO₃ sample with x?=?0.02 exhibits better structural, dielectric and ferroelectric properties in whole range of sintering temperature.     

Structural phase transition,electrical and photoluminescent properties of Pr3+-doped (1-x)Na0.5Bi0.5TiO3-xSrTiO3 lead-free ferroelectric thin films

Lead-free ferroelectric Pr³⁺-doped (1-x)Na_0.5Bi_0.5TiO₃-xSrTiO₃ (x?=?0–0.5) (hereafter abbreviated as Pr-NBT-xSTO) thin films were prepared on Pt/Ti/SiO₂/Si and fused silica substrates by a chemical solution deposition method combined with a rapid thermal annealing process at 700?°C, and their structural phase transition, dielectric, ferroelectric, and photoluminescent properties were investigated as a function of STO content. Raman analysis shows that with increasing STO content, the phase structures evolve from rhombohedral phase to coexistence of rhombohedral and tetragonal phases (i.e. morphotropic phase boundary), and then to tetragonal phase. The structural phase transition behavior has been well confirmed by temperature- and frequency- dependent dielectric measurements. Meanwhile, the variation in photoluminescence intensity of Pr³⁺ ions with different STO content in the NBT-xSTO thin films also indicates that there exists a clear structural phase transition when the film composition is close to the morphotropic phase boundary. Superior dielectric and ferroelectric properties are obtained in the Pr-NBT-0.24STO thin films due to the formation of morphotropic phase boundary. Our study suggests that Pr-NBT-xSTO thin films be promising multifunctional materials for optoelectronic device applications.     

Structural transformation in Mn-substituted Sr2Bi2Ta2TiO12 Aurivillius phase synthesized by hydrothermal method: A comparative study and dielectric properties

In this study, a hydrothermal method was applied to synthesize the three-layer Aurivillius phase Sr₂Bi₂Ta₂TiO₁₂ (SBTTO) and Mn-substituted Sr_1·5Bi_2·5Ta₂Ti_0·5Mn_0·5O₁₂ (SBTTMO), with the use of NaOH as a mineralizer. The crystal structure, morphology, dielectric properties, and the correlation between the structural transformation and dielectric properties were investigated. The XRD data reveal that the SBTTO sample adopts a tetragonal crystal structure with the I4/mmm space group and is then transformed into an orthorhombic structure with the B2cb space group for SBTTMO. The morphology of both samples was observed by SEM, which showed anisotropic plate-like grains. With the Mn substitution, the ferroelectric transition temperature (T_c) significantly increases as the influence of the 6s² lone pair of Bi³⁺ increases, and this in turn further induces the relaxor-ferroelectric behavior. Consequently, the increase in T_c confirms the structural transformation from the paraelectric-tetragonal to the ferroelectric-orthorhombic phase.     

The thermal decomposition of K0.5Bi0.5TiO3 ceramics

The high-temperature behaviour of K_0.5Bi_0.5TiO₃, prepared using a conventional solid-state reaction method, was investigated using X-ray powder diffraction, scanning electron microscopy, wavelength-dispersive X-ray spectroscopy and Knudsen effusion combined with mass spectrometry. The results revealed the formation of an off-stoichiometric matrix phase with an excess of bismuth and a deficit of potassium compared to the stoichiometric K_0.5Bi_0.5TiO₃ during the solid-state reaction. During the thermal treatment potassium and bismuth vapours were detected over the solid sample and related to the thermal decomposition of the matrix phase. The losses of the potassium and bismuth components shifted the nominal composition to a three-phase region, and as a result, K₂Ti₆O₁₃ and a new Bi-rich ternary phase were formed in the system, the latter being formed after prolonged sintering. Differential thermal analyses and heating-microscope analyses showed a narrow sintering-temperature range limited by the melting of the sample above 1040 °C.     

Effects of K0.5Bi0.5TiO3 addition on dielectric properties of BaTiO3 ceramics

(1?x)BaTiO₃–xK_0.5Bi_0.5TiO₃ (abbreviated as BT–KBT, 0.10≦x≦0.15) dielectric ceramics were prepared by a conventional oxide mixing method. The effects of KBT content on the densification, microstructure and dielectric properties of BT ceramics were investigated. The density characterization results show that the addition of KBT significantly lowered the sintering temperature of BT ceramics to about 1280 °C. The XRD results showed that the phase compositions of all samples were pure tetragonal phases. The dielectric constant and dielectric loss firstly increased and then decreased with the increase of KBT. In addition, dielectric constant and dielectric loss versus frequency were characterized in the frequency range from 100 Hz to 2 MHz. It is found that the dielectric constant and the dielectric loss changed with the increase of KBT contents regularly.     

Low-temperature synthesis of K0.5Na0.5NbO3 ceramics in a wide temperature window via cold-sintering assisted sintering method and enhanced electrical properties

High temperatures (≥ 1100 °C) and narrow temperature window (～ 20 °C) for sintering dense K_0.5Na_0.5NbO₃ ceramics always deteriorate their electrical properties. Here, via cold-sintering assisted sintering method, dense K_0.5Na_0.5NbO₃ ceramics were obtained in a wide temperature span between 800 °C and 1000 °C. An aqueous solution of NaOH and KOH mixture was used as transient liquid. Effects of liquid content (LC), molar concentration (MC) of liquid, cold-sintering temperature (T_CS), and post-annealing temperature (T_AN) on densification and electrical properties of the ceramics were investigated in detail. The ceramics prepared using LC = 10 wt%, MC = 10 mol/L, T_CS = 350 °C, and T_AN = 900 °C exhibit excellent electrical properties with d₃₃ = 123 pC/N, ε_r = 609, tanδ = 0.021, P_r = 28.0 μC/cm², P_m = 39.2 μC/cm², and E_c = 20.3 kV/cm. Compared to the ceramics with same or similar compositions via conventional solid-state sintering, the present K_0.5Na_0.5NbO₃ ceramics exhibit excellent electrical properties. The study endows the cold-sintering assisted sintering the successful method to prepare K_0.5Na_0.5NbO₃ ceramics at low temperatures and in a wide temperature window.     

Nb-doped BaTiO3-(Bi0.5Na0.5)TiO3 ceramics with core-shell structure for high-temperature dielectric applications

Nb-doped 0.90BaTiO₃-0.10(Bi_0.5Na_0.5)TiO₃ temperature-insensitive ceramics with novel core-shell structure were sintered at low temperature by the conventional solid-state reaction method. The beneficial role of Nb in facilitating the formation of core-shell structure because of chemical inhomogeneity is verified, which is responsible for the weak temperature dependence of dielectric properties. Temperature dependence of permittivity measured at different frequencies shows high frequency dispersion at low temperature, while without relaxor characteristic at high temperature. The Vogel–Fulcher model was adopted to study the relaxor behaviour of Nb-doped 0.90BaTiO₃-0.10(Bi_0.5Na_0.5)TiO₃ ceramics at low temperature. The samples with an addition of 1.5?mol% Nb₂O₅ provide a temperature coefficient of capacitance meeting the requirements of the X9R characteristic, and result exhibits an optimum dielectric behaviour of ε_r ～1900, tanδ ～1.8% at room temperature, making the material a promising candidate for high temperature applications.     

Enhancement in dielectric and ferroelectric properties of lead free Bi0.5(Na0.5K0.5)0.5TiO3 ceramics by Sb-doping

Lead free piezoelectric Bi_0.5(Na_0.5K_0.5)_0.5TiO₃ (pure and 1 wt.%, 2 wt.%, 4 wt.% Sb-doped) ceramics were synthesized away from its MPB. The crystalline nature of the BNKT ceramic was studied by XRD and SEM. Depolarization temperature (T_d) and transition temperature (T_c) were observed through phase transitions in dielectric studies which were found to increase after Sb-doping, thus increasing its usable temperature range. In the study of relaxation behavior, the activation energy for relaxation was found to be 0.33, 0.43, 0.57 and 0.56 eV for pure and Sb-doped samples, respectively. All samples were found to exhibit normal Curie-Weiss law above their T_c. Doping of Sb was found to restrain the diffused character of the pure sample. In P-E loop, Sb-doping was found to increase the ferroelectric properties.Pure and Sb-doped BNKT ceramics exhibited high values of piezoelectric charge coefficient (d₃₃) as 115, 121, 129 and 100 pC/N, respectively.     

Structural and dielectric properties of (Na0.5Bi0.5)0.70Ba0.30TiO3 ceramics

A (Na_0.5Bi_0.5)_0.70Ba_0.30TiO₃ ceramic has been studied by X-ray diffraction and by measurements of dielectric and ferroelectric properties between room temperature and 450 °C. A sharp increase in the electric permittivity and dielectric loss near 200 °C has been observed. This sharp increase in dielectric responses indicates a transformation between normal and relaxor ferroelectric states. It is found that polar regions can exist at higher temperatures. The X-ray diffraction study shows that the transformation corresponds to the first order phase transition from tetragonal to cubic. The use of the (Na_0.5Bi_0.5)_0.70Ba_0.30TiO₃ ceramic for device application has also been indicated.     

Effects of Sm-substitution on dielectric,ferroelectric, and piezoelectric properties of 0.36(Bi1-xSmx)ScO3-0.64PbTiO3 ceramics

Dielectric, ferroelectric, and piezoelectric properties of 0.36(Bi_1-xSm_x)ScO₃-0.64PbTiO₃ (BSPT-xSm) ceramics were investigated to assess effects of Sm-substitution on 0.36BiScO₃-0.64PbTiO₃ for high temperature piezoelectric device application. Optimal sintering was achieved at 1200°C when the BSPT-xSm ceramics were fully densified and crystallized with a perovskite structure without any secondary phase. The substitution of Bi³⁺ with Sm resulted in degradation of rhombohedral side in BSPT-xSm ceramics having morphotropic phase boundary. In addition, variations of grain size and ferroelectric behavior after Sm-substitution were insignificant. However, dielectric constant (ε^T₃₃/ε₀) was significantly enhanced with an increasing of amount of Sm to 5%. Although a slight decrease of relative density in case of x exceeding 3% led to deterioration of piezoelectric values of d₃₃, k_p, and d₃₃*, the BSPT-3%Sm ceramic exhibited excellent values of d₃₃ of 628 pC/N, k_p of 62.4%, and d₃₃* of 718 pm/V at 4.5 kV/mm, along with a high ferroelectric transition temperature of 421°C. The highly increased diffusion coefficient of 1.909 also implies that the Sm-substitution contributed to relaxor-like ferroelectric behavior of BSPT ceramics.