Scalable Microstructured Photoconductive Terahertz Emitters

The development of scalable emitters for pulsed broadband terahertz (THz) radiation is reviewed. Their large active area in the 1 – 100 mm² range allows for using the full power of state-of-the-art femtosecond lasers for excitation of charge carriers. Large fields for acceleration of the photogenerated carriers are achieved at moderate voltages by interdigitated electrodes. This results in efficient emission of single-cycle THz waves. THz field amplitudes in the range of 300 V/cm and 17 kV/cm are reached for excitation with 10 nJ pulses from Ti:sapphire oscillators and for excitation with 5 μJ pulses from amplified lasers, respectively. The corresponding efficiencies for conversion of near-infrared to THz radiation are 2.5 × 10^-4 (oscillator excitation) and 2 × 10^-3 (amplifier excitation). In this article the principle of operation of scalable emitters is explained and different technical realizations are described. We demonstrate that the scalable concept provides freedom for designing optimized antenna patterns for different polarization modes. In particular emitters for linearly, radially and azimuthally polarized radiation are discussed. The success story of photoconductive THz emitters is closely linked to the development of mode-locked Ti:sapphire lasers. GaAs is an ideal photoconductive material for THz emitters excited with Ti:sapphire lasers, which are widely used in research laboratories. For many applications, especially in industrial environments, however, fiber-based lasers are strongly preferred due to their lower cost, compactness and extremely stable operation. Designing photoconductive emitters on InGaAs materials, which have a low enough energy gap for excitation with fiber lasers, is challenging due to the electrical properties of the materials. We discuss why the challenges are even larger for microstructured THz emitters as compared to conventional photoconductive antennas and present first results of emitters suitable for excitation with ytterbium-based fiber lasers. Furthermore an alternative concept, namely the lateral photo-Dember emitter, is presented. Due to the strong THz output scalable emitters are well suited for THz systems with fast data acquisition. Here the application of scalable emitters in THz spectrometers without mechanical delay stages, providing THz spectra with 1 GHz spectral resolution and a signal-to-noise ratio of 37 dB within 1 s, is presented. Finally a few highlight experiments with radiation from scalable THz emitters are reviewed. This includes a brief discussion of near-field microscopy experiments as well as an overview over gain studies of quantum-cascade lasers.     

Terahertz radiation of a butterfly-shaped photoconductive antenna (invited)

The terahertz(THz) far-field radiation properties of a butterfly-shaped photoconductive antenna (PCA) were experimentally studied using a home-built THz time-domain spectroscopy(THz-TDS) setup. To distinguish the contribution of in-gap photocurrent and antenna structure to far-field radiation, polarization-dependent THz field was measured and quantified as the illuminating laser beam moved along the bias field within the gap region of electrodes. The result suggests that, although the far-field THz radiation originates from the in-gap photocurrent, the antenna structure of butterfly-shaped PCA dominates the overall THz radiation. In addition, to explore the impact of photoconductive material, radiation properties of butterfly-shaped PCAs fabricated on both low-temperature-grown GaAs(LT-GaAs) and semi-insulating GaAs(Si-GaAs) were characterized and compared. Consistent with previous experiments, it is observed that while Si-GaAs-based PCA can emit higher THz field than LT-GaAs-based PCA at low laser power, it would saturate more severely as laser power increased and eventually be surpassed by LT-GaAs-based PCA. Beyond that, it is found the severe saturation effect of Si-GaAs was due to the longer carrier lifetime and higher carrier mobility, which was confirmed by the numerical simulation.     

Analysis of terahertz waveforms measured by photoconductive andelectrooptic sampling

Terahertz (THz) waveform measurements by photoconductive (PC) sampling and free-space electrooptic sampling (FS-EOS) are analyzed and quantitatively compared. Our data suggest that a short dipole antenna used in a PC receiver contributes a flat frequency response when used without a substrate lens and a jω response when used with a substrate lens, for the specific THz frequency range and optical system investigated in our experiments. These findings are explained using results from basic antenna theory. Experiments testing our theory for a variety of THz waveforms (obtained by using different THz emitters and simple as well as shaped optical excitation pulses) and for different carrier lifetimes are also presented. Finally, we demonstrate near-field effects in the PC sampling measurements of broad-band THz waveforms and explore the evolution of THz radiation from the near field into the far field     

InSb光电导太赫兹源材料性质及辐射场研究

为了研究锑化铟(InSb)半导体材料光电导太赫兹辐射过程,用数值计算方法分析材料内载流子迁移率和表面电流,以及不同性质抽运激光器对太赫兹波近场强度的影响,用宏观电磁场理论和微观半导体理论分析材料表面电流,比较了InSb和GaAs材料的太赫兹波功率谱曲线。结果表明,InSb材料载流子弛豫时间越长,载流子迁移率越大;表面电流与载流子寿命和弛豫时间成正比;宏观电磁场理论更适于分析表面电流;抽运激光饱和能量密度越大,太赫兹近场辐射强度越强;抽运激光脉冲宽度越短,太赫兹近场辐射强度越强;InSb光电导辐射太赫兹波功率比GaAs高。该结果为基于InSb光电导太赫兹辐射源的研究奠定了一定的基础。     

Terahertz time-domain-spectroscopy system using a 1 micron wavelength laser and photoconductive components made from low-temperature-grown GaAs

A terahertz time-domain spectroscopy (TDS) system based on a femtosecond Yb:KGW laser, photoconductive emitters and detectors made from as-grown and from annealed at moderate temperatures (~400°C) low-temperature-grown GaAs (LTG GaAs) layers was demonstrated. The measured photoconductivity of these layers increased linearly with the optical power, showing that transitions from the defect band to the conduction band are dominant. The largest amplitude THz pulse with a useful signal bandwidth reaching 3 THz and its signal-to-noise ratio exceeding 50 dB was emitted by the device made from the LTG GaAs layer annealed at 420°C temperature. The detector made from this material was by an order of magnitude less sensitive than conventional GaBiAs detectors.     

Resonant features of the terahertz generation in semiconductor nanowires

The paper presents the results of experimental studies of the generation of terahertz radiation in periodic arrays of GaAs nanowires via excitation by ultrashort optical pulses. It is found that the generation of THz radiation exhibits resonant behavior due to the resonant excitation of cylindrical modes in the nanowires. At the optimal geometric parameters of the nanowire array, the generation efficiency is found to be higher than that for bulk p-InAs, which is one of the most effective coherent terahertz emitters.     

Single-pulse pump-probe measurement of optical nonlinear propertiesin GaAs/AlGaAs multiple quantum wells

Single-pulse ps-pump and ns-probe nonlinear transmission measurements provide carrier-density-dependent optical nonlinear spectra in GaAs/AlGaAs multiple quantum wells grown by metalorganic chemical vapor deposition. The use of the ps pump eliminates the need to know carrier lifetime to determine carrier density. The saturation behavior of changes in absorption coefficient and refractive index are modeled by a simple saturation equation to obtain saturation carrier density. The saturation spectra for different well thicknesses are obtained. The minimum saturation carrier density appears around 150 Å     

Carrier recombination in a periodically δ-doped multiplequantum well structure

We have theoretically and experimentally investigated the optical-excitation-dependent carrier recombination lifetime in a periodically δ-doped InGaAs/GaAs multiple-quantum-well structure. The spatial separation of photogenerated electrons and holes results in an increased sensitivity to the optical excitation intensity in proportion to the increase in carrier lifetime. Experimentally, we find more than six orders of magnitude reduction in the carrier recombination rate over that for spatially direct transitions under low-excitation conditions. On the other hand, theory predicts intrinsic recombination rates for ideal structures far below those found experimentally. Various mechanisms such as electric-field-enhanced redistribution of the dopants during epitaxial growth, statistical variations in the separation of the dopants, and extrinsic recombination channels caused by misfit dislocations are discussed as possible origins for this discrepancy     

Large-signal characterizations of DDR IMPATT devices based on group III-V semiconductors at millimeter-wave and terahertz frequencies

Large-signal (L-S) characterizations of double-drift region (DDR) impact avalanche transit time (IMPATT) devices based on group III-V semiconductors such as wurtzite (Wz) GaN, GaAs and InP have been carried out at both millimeter-wave (mm-wave) and terahertz (THz) frequency bands. A L-S simulation technique based on a non-sinusoidal voltage excitation (NSVE) model developed by the authors has been used to obtain the high frequency properties of the above mentioned devices. The effect of band-to-band tunneling on the L-S properties of the device at different mm-wave and THz frequencies are also investigated. Similar studies are also carried out for DDR IMPATTs based on the most popular semiconductor material, i.e. Si, for the sake of comparison. A comparative study of the devices based on conventional semiconductor materials (i.e. GaAs, InP and Si) with those based on Wz-GaN shows significantly better performance capabilities of the latter at both mm-wave and THz frequencies.     

Saturation properties of large-aperture photoconducting antennas

The authors describe the saturation properties of ultrafast pulsed electromagnetic radiation generated by large-aperture photoconducting antennas as a function of optical excitation fluence. A theory that predicts this effect is presented. The amplitude saturation of the radiation has been observed form antennas incorporating GaAs, InP, and radiation damaged silicon-on-sapphire consistent with theoretical expectations. The radiated fields were measured directly with a time resolution of 0.6 ps with the use of a large-aperture antennas as a detector. From these experimental studies, information about the high-speed response (i.e., the transient carrier mobility in the first few picoseconds after optical excitation) of the photoconductors incorporated in the antenna can be obtained under conditions of high applied electric fields and optical fluences     

High Energy THz Pulse Generation by Tilted Pulse Front Excitation and Its Nonlinear Optical Applications

Generation of high energy THz pulses by tilted pulse front excitation is reviewed. The basic idea and the realized setups are described. Properties of THz pulses generated by using different pump lasers are summarized. Nonlinear optical effects induced by the high energy THz pulses were observed, such as nonlinear refraction, self-phase modulation, saturation of THz absorption, and free carrier generation. The main results on these phenomena are described. The possibility of using THz pulses as a quasi-dc field for increasing the cut-off frequency in high harmonic generation is analyzed. The THz generation setup used in recent experiments is analyzed and arrangements for achieving better THz beam quality and higher THz pulse energy are considered. Finally, some results of calculations indicating significantly increased generation efficiency of 0.2-THz pulses compared to generation efficiency of 1-THz pulses are presented.     

低温生长砷化镓光电导天线产生太赫兹波的辐射特性

研究了低温生长砷化镓光电导天线(LT-GaAs PCA)产生太赫兹(THz)波的辐射特性。利用太赫兹时域光谱(TDS)技术测量了光电导发射极在飞秒激光作用下辐射的太赫兹脉冲,得到了时域发射光谱,并通过快速傅里叶变换(FFT)得到相应的频域光谱。结果表明,低温砷化镓光电导天线产生的太赫兹波信号比飞秒激光激发半导体表面产生的太赫兹波信号具有更高的强度和信噪比;太赫兹波信号与光电导天线的偏置电压成线性关系;随着抽运激光功率的增强,太赫兹波信号增大并出现饱和。     

偏置电压驱动下AlGaN/GaN二维电子气的宽谱太赫兹波发射

本文介绍了低温（6 K）下偏置电压加速AlGaN/GaN二维电子气产生的宽谱太赫兹波发射。根据“浅水波”等离子体波失稳理论和史密斯-珀塞尔理论,分别设计了两种器件结构。实验结果表明所观测到的太赫兹辐射与电子浓度无明显依赖关系,得到的而是自于晶格和热电子的黑体辐射。通过考虑湿度和衬底法布里-珀罗谐振腔作用,计算得到的热电子发射光谱与实验光谱良好吻合。研究结果表明通过电流驱动二维电子气产生太赫兹辐射的器件将不可避免地产生强烈的电子气加热和晶格加热问题,很难实现理论预言的等离子体波失稳与高效太赫兹发射。因此,需要设计更加精巧的器件结构才能实现高效的等离子体波激发和太赫兹发射。     

Threshold current characteristics of GaAs lasers under short pulse excitation

Measurements of the temperature dependence of threshold current using both short pulse and CW excitation of GaAs heterostructure lasers with multiquantum well and conventional active layers are presented. Our results show that the carrier density at threshold is weakly temperature-dependent in both types of lasers. This is consistent with the measured carrier lifetime at threshold.     

Gain dispersion and saturation effects in four-wave mixing insemiconductor laser amplifiers

This paper addresses four-wave mixing (FWM) in semiconductor laser amplifiers from the point of view of a propagation problem. The gain dispersion effect, i.e., the difference of the gain factors for the pump, probe and signal waves is shown to be significant in the case of large detunings >1 THz. It is given an analytical solution of the FWM problem including gain dispersion and saturation effects. Considering the saturation behaviour, it is shown that the linear gain factors for the different waves and the nonlinear susceptibilities associated with the different nonlinear effects must be characterized by different carrier densities at transparency. A comparison of our theory with a numerical model, with previous approaches and with experimental data is given     

The Role of Self-Similarity in Fractal Photoconductive THz Emitters

We present the effect of self-similarity in fractal photoconductive THz emitters. The performance of fractal THz PC emitters are compared to those of non-fractal emitters, and their radiation properties are studied. It is demonstrated that the THz radiation emission enhancement results from the inherent fractal self-similarity and not only from the sub-wavelength apertures pattern present on the antenna’s surface. Through the application of this concept, photoconductive THz emitters having higher THz radiation power could be designed and fabricated.     

Broadening mechanism in semiconductor (GaAs) lasers: Limitations to single mode power emission

A nonlinear steady-state theory of the emission spectrum of semiconductor (GaAs) lasers above threshold is developed, and limitation to power in a single longitudinal mode is studied. The nonlinear steady-state rate equations describing the power and the gain are solved iteratively. The model is based on the well known idea that the gain always saturates somewhere below the loss, and power sharing among the modes is dependent on the relative gain of the modes with respect to the loss level. The limitation to single mode power is essentially due to the uneven rate of saturation of the gain of the different modes as they approach the loss level asymptotically, with the dominant mode having the fastest saturation. The rate of saturation of the gain of different modes depends on the power emission spectrum and the intraband relaxation rate of the carriers. In this work, the relaxation is accounted for by using the generalized spectral weight function to describe the carriers. The dependence of maximum single mode power on intraband relaxation time is obtained. It ranges from a few milliwatts for relaxation time of the order of 10^-12s to hundreds of milliwatts for relaxation time of 10^-13s. The predictions of the model on gain saturation spectra, and carrier lifetime spectra agree well with experimental observations. The gain is seen to saturate near the lasing energy but continues to increase at a reduced rate at higher energy levels. The carrier radiative lifetime is found to decrease sharply in the vicinity of the lasing mode energies.     

基于硅基石墨烯的全光控太赫兹波强度调制系统研究

在太赫兹通信等系统中需要利用太赫兹波调制器对信号进行调制.基于GaAs 等传统半导体材料设计和制作的调制器在太赫兹波段的响应过低,因而很难应用于太赫兹系统.为了弥补传统调制技术在带宽和调制深度不够的缺点,设计了一种全新的基于硅基石墨烯的全光控太赫兹强度调制系统.该调制系统利用材料中光生载流子对太赫兹波的吸收特性,通过调节照射到材料上的可见光光强来改变光生载流子浓度,从而实现对太赫兹波强度调制.从理论和实验两方面对这种新型太赫兹强度调制系统的调制深度和调制带宽进行了研究.研究结果表明,在泵浦光功率密度为18 mW/mm2时,该调制系统能在实验使用的THz-TDS 测试系统(0.1~2.5 THz)的整个频谱范围内进行有效的调制,调制深度可达到12 %.且随着泵浦光能量的增大,调制深度增大.     

Dopant Migration-Induced Interface Dipole Effect in n-Doped GaAs/AlGaAs Terahertz Detectors

A heterojunction interfacial workfunction internal photoemission (HEIWIP) terahertz detector with ~1times10¹⁸cm^-3 n-type doped GaAs emitters in a multilayer GaAs/Al_0.13Ga_0.87 As heterostructure is presented. The detection mechanism is based on free carrier absorption with a broad response extending to ~ 5.26 THz (57 mum), corresponding to an effective workfunction of ~ 21.8 meV, which is much smaller than the offset expected for an Al fraction of x = 0.13 at a 1times10¹⁸ cm^-3 doping. This is attributed to a reduction of the conduction band offset by interface dipole formation between the accumulated negative charges at the interface states and migrated positively charged donors in the barrier. The device has a peak responsivity of 0.32 A/W at ~ 26 mum at 5 K. It is demonstrated that the dopant migration-induced interface dipole effect can be used to extend the zero response threshold frequency (f ₀) of n-type HEIWIP detectors.     

The application of semiconductors with negative electron affinity surfaces to electron emission devices

Semiconductors with negative electron affinity (NEA) surfaces are used as photoemitters, secondary emitters, and cold-cathode emitters. A comprehensive review of the characteristics and applications of these materials is presented, the concept of NEA is described, and a comparison is made between NEA and conventional emitters. Electron generation, transport, and emission processes of NEA emitters are discussed. NEA III-V compound photocathodes, especially GaAs, are described with respect to their fabrication, performance, and applications to photomultipliers and image intensifier tubes. The structure and performance of NEA secondary emitters are presented. NEA GaP secondary-emission dynodes represent the most important device application. NEA cold cathodes, using GaAs, Ga(As, P), or Si, have been investigated, and their performance characteristics are summarized. NEA Si cold cathodes have been incorporated in developmental TV camera tubes. The characteristics of these tubes are reviewed.