原子力显微镜在聚合物溶液结构研究中的应用

驱油用水溶性聚合物溶液的应用性能由其聚合物溶液的微观结构所决定,因此在驱油用聚合物合成及配方研究中迫切需要研究其溶液的微观结构。本文使用原子力显微镜（AFM）、环境扫描电镜（ESEM）和透射电镜（TEM）观察了水溶液中聚合物（HAWSP,AP-P4）的微观结构。研究发现常温常压下原子力显微镜观察到的聚合物网络结构图案清晰,边界分辨率高。透射电镜观察到的聚合物网络结构较模糊且网络结构有断裂现象。环境扫描电镜观测到的网络结构尺寸大小是AFM观测到的几倍甚至是十几倍。动态光散射（dynamic light scattering,DLS）结果证明AFM和TEM所观测到的聚合物结构最接近于真实结构。结果表明使用原子力显微镜在观察水溶性聚合物类样品时,能够较真实反映其微观结构。     

基于大高宽比CD-AFM探针的设计与制备

针对传统原子力显微镜(AFM)探针和关键尺寸原子力显微镜(CD-AFM)探针受限于针尖有效扫描高度较低,无法对深沟槽和大悬垂侧壁结构进行精准扫描成像的问题,提出了一种大高宽比针尖结构的新型CDAFM探针设计与制备方案。开发的新型CD-AFM 探针针尖有效高度为5.1~5.8 μm,高宽比达到14,相较于传统硅基CD-AFM 探针,其有效高度提升了约4倍。利用开发的探针完成了标称深度为2.3 μm、深宽比为4.6的深沟槽样品测试。     

原子力显微镜在生殖支原体研究中的应用

为了确定生殖支原体在活性条件下的结构形貌,并在较高的分辨水平上观察其三维形貌结构,本研究采用原子力显微在常温常压下对生殖支原体标准株及分离株进行形态学的初步观察,将标本固定于云母上,在ｔａｐｐｉｎｇ模式下扫描成像,结果显示：生殖支原体多呈烧瓶状或鸭梨状,有突出的颈产及膨大的头端,与电镜观察结果类似,其大小亦与银镜测量结果类似。     

STM在纳米科技中的应用几例

本文阐述了我们用超高真空ＳＴＭ在介观物理和纳米科技前沿领域做的一些探索和结果。     

基于隧道电流检测方式的原子力显微镜纳米检测系统设计

原子力显微镜（AFM）是当前进行材料表面微观形貌观察及分析的强有力工具之一。本文主要介绍一种隧道显微镜（STM）检测方式的原子力显微镜纳米检测系统（AFM.IPC-208B）,该AFM系统设计是在STM.IPC-205B系统设计的基础上,采用隧道电流工作方式,将STM与AFM功能组合兼容。文章详细阐述了AFM.IPC-208B系统的设计原理、镜体、扫描控制以及数据采集。新设计的AFM.IPC-208B系统仍具有0.1nm的分辨率,检测范围为0～2mm×2mm,系统操作简易,工作效率高,与原STM.IPC-205B系统兼容,工作性能稳定可靠。     

两种方法提取的麦冬多糖结构及聚集行为的比较研究

本文利用热水提取法与超声提取法提取麦冬多糖,并利用傅里叶变换红外光谱法、原子力显微镜(AFM)及扫描电子显微镜(SEM)对两种方法提取的麦冬多糖的官能团及表面形貌进行了比较研究。结果表明,热水提取的麦冬多糖(WPOJ-DS)与超声提取的麦冬多糖(UPOJ-DS)的官能团存在明显差别,在WPOJ-DS中检测到β-葡萄吡喃糖,而UPOJ-DS中没有。两种多糖的AFM观测结果表明,相对于WPOJ-DS,UPOJ-DS的分散性更好,能观察到多糖单分子链形态以及明显的螺旋结构,说明超声处理可能对麦冬多糖的分子间及分子内氢键产生影响。SEM结果表明,UPOJ-DS相对于WPOJ-DS大片状结构减少,且出现很多棒状及小球状颗粒,说明超声处理使麦冬多糖产生了降解。因此,超声提取法会对麦冬多糖的分子结构及聚集行为产生影响。     

图像自动识别技术在轨道车辆检测中的应用

在轨道车辆检测中应用图像处理和模式识别,可提高车辆检测效率,对轨道车辆的安全运行具有重要意义。本文旨在对采集的轨道车辆侧底部的裙底板3D图像,运用图像配准,图像对比,霍夫圆检测,神经网络等,通过当前采集的图像与模板图像比对实现轨道车辆裙底板进行自动检测。内容包含:图像的采集方式,模板数据库的建立,部件定位,以及通过对异常识别实例证实图像处理算法与轨道车辆部件检测之间的联系。     

分子束外延的CdTe在碲镉汞中波器件中钝化效果

采用分子束外延技术（MBE）制备了碲化镉（CdTe）原位钝化的中波碲镉汞（HgCdTe）材料。原子力显微镜（AFM）和扫描电子显微镜（SEM）测试结果表明,分子束原位外延的CdTe可见cross-hatch,表面粗糙度为1～2 nm,CdTe和HgCdTe界面结合紧密。微波光导测试结果显示,77 K时,与表面处理后非原位CdTe钝化的HgCdTe材料相比,CdTe原位钝化的HgCdTe材料的少子寿命较大。制备了分子束外延CdTe原位钝化的中波HgCdTe光伏器件,和相同材料上的非原位CdTe/ZnS双层钝化制备的器件I-V特性相似。     

在SPM通用平台上开发特殊功能扫描探针显微镜

SPM通用平台是一套扫描探针显微镜开发工具系统 ,它提供了一种开发生产SPM新的思路和方法 ,使SPM成为通用、开放、兼容的仪器体系。本文介绍了SPM通用平台的原理、指标和在其上扩展扫描隧道显微镜、原子力显微镜等功能模块的方法 ,以及智能型SPM通用平台的研究思路     

电化学扫描探针显微镜在表面微/纳米加工的应用

概述了在固/液界面微/纳米加工中经常采用的三种电化学扫描探针显微镜(EC-SPM)技术,分别讨论了电化学扫描隧道显微镜(EC-STM)、电化学原子力显微镜(EC-AFM)和扫描电化学显微镜(SECM)在应用于微/纳米加工时的基本原理和各种方法,并综合比较和分析了这三种技术的优缺点.     

Analysis of electromigration induced early failures in Cu interconnects for 45 nm node

Bi-directional current stressing was used for monitoring electromigration (EM) lifetime evolution in 45 nm node interconnects. Experimental results show that an initial bimodal distribution of lifetimes can be modified into a more robust mono-modal distribution. Since the bi-directional tests provide successive void nucleation and void healing phases, the Cu microstructure is thought to evolve once the formed void is filled thanks to EM induced matter displacement. FEM modeling is used to compare the predicted location of void nucleation for given microstructures at the cathode end: a multigrain structure is compared to a perfect bamboo microstructure. Experimental and modeling results let us assume that small grains (<linewidth or via diameter) at the cathode end present a risk of EM induced early fails. Indeed at this location void nucleates and grows nearby the via opening it shortly. On the contrary, the bamboo microstructure is thought to provide more robust lifetime because voids nucleate a few hundred nanometers in the line and grow down reaching the bottom diffusion barrier of the line. This latter case provides larger void size before circuit opening.     

有机半导体材料蒽薄膜的生长

利用常规的真空蒸发技术,在热氧化硅片的衬底上沉积了蒽薄膜.用扫描电子显微镜(SEM)和原子力显微镜(AFM)对不同沉积时间的蒽薄膜形貌进行了观察,研究了蒸发沉积蒽膜时膜在二氧化硅衬底上的成核和生长模式,并借助X射线衍射仪(XRD)分析了薄膜的结晶状态.结果显示:蒽膜生长时,蒽的临界核以Volmer-Weber模式生长,即蒽首先形成许多三维岛状的晶核,核长大增高为岛,然后在蒽离域大π键的作用下,相邻的两层蒽分子存在一定程度的交叠,岛与岛相互连接构成岛的通道,最后形成均匀致密、具有良好晶体特性的多晶薄膜.     

Properties of In2O3 films obtained by thermal oxidation of sprayed In2S3

In₂S₃ thin films were grown by the chemical spray pyrolysis (CSP) method using indium chloride and thiourea as precursors at a molar ratio of S:In=2.5. The deposition was carried out at 350 °C on quartz substrates. The film thickness is about 1 µm. The films were then annealed for 2 h at 550, 600, 650 and 700 °C in oxygen flow. This process allows the transformation of nanocrystal In₂O₃ from In₂S₃ and the reaction is complete at 600 °C. X-ray diffraction spectra show that In₂O₃ films are polycrystalline with a cubic phase and preferentially oriented towards (222). The film grain size increases from 19 to 25 nm and RMS values increase from 9 to 30 nm. In₂O₃ films exhibit transparency over 70–85% in the visible and infrared regions due to the thickness and crystalline properties of the films. The optical band gap is found to vary in the range 3.87–3.95 eV for direct transitions. Hall effect measurements at room temperature show that resistivity is decreased from 117 to 27 Ω cm. A carrier concentration of 1×10¹⁶ cm^?3 and mobility of about 117 cm² V^?1 s^?1 are obtained at 700 °C.     

Comparing the economic impact of alternative metrology methods in semiconductor manufacturing

Metrology is an essential part of advanced semiconductor manufacturing. It accelerates yield improvement and sustains yield performance at every stage in both new and mature processes. Advances in metrology are needed to achieve challenging industry goals, such as smaller feature sizes and reduced time for introduction of new materials and processes for future technology. To achieve difficult industry goals, it is expected that metrology practices will migrate from offline to inline, and ultimately, to in situ. Economic models are needed to study the costs and benefits of introducing new metrology technologies and to compare alternative metrology practices. Several qualitative and quantitative models are presented in this paper to study the elements of revenue and cost associated with different metrology tools and practices. Comparisons between in situ, inline and offline metrology systems are made. The cost components of the metrology methods are analyzed and discussed with respect to steady state process control as well as their effect on time to yield. Monte Carlo simulation models are used to study each system under different scenarios.     

双通道同步看电视原理与应用

阐述了双通道同步看电视工作原理;3D电视技术与双通道电视技术的主要区别。通过对康佳LJED42X8100PDE电视系统构成、硬件电路实现、软件构成的解析,介绍了双通道同步看技术在康佳电视中的应用。     

Impact of porous SiOCH on propagation performance measured for narrow interconnects of the 45 nm node

With the dimensions scaling down at each new technology node, introduction of porous dielectric materials is required to reduce the interconnect capacitance. Nevertheless, these materials are very prone to damage during integration, thus increasing their K-value (2.5 as deposited for the 45 nm node) in the final circuit. In order to characterize these effects, high-frequency measurements and electromagnetic simulations were carried out on specific microstrip structures. Taking into account typical circuit characteristics, time-domain extraction of delay values and crosstalk levels were then performed, enabling a precise analysis of moisture uptake effects from a performance point of view.     

Total Ionizing Dose,Random Dopant Fluctuations,and its combined effect in the 45 nm PDSOI node

Total Ionizing Dose and Random Dopant Fluctuation simulations in 45nm Partially Depleted Silicon-on-Insulator nMOSFETs are presented. Calibration is done according to the commercial IBM 45nm technology node. The importance of the bottom corner parasitic transistor to the Total Ionizing Dose response is shown with the use of ultra shallow junctions. Simulation of irradiation in two-dimensional slices of the device reveal that the majority of the charge is trapped around the silicon film and at the bottom of the Buried OXide in the case of a positive gate bias. Random Dopant Fluctuations are examined using the Sano and the Impedance Field Method. The simulation results of the two methods are in good agreement. Dopant fluctuations do not produce significant response variation pre-irradiation, but they affect post-irradiation results introducing statistical deviations and aggravating Total Ionizing Dose effects. This effect is more pronounced during weak inversion of the parasitic transistor.     

Flash Papervision3D中3D Web应用程序设计

为了能将日益应用广泛的Papervision3D、能在Flash Player中播放的目的,采用较为新颖的3D引擎方法,做了三维到二维的转换、Flint粒子系统实验,实现了平滑拉近物体从远处拉近及喷泉的效果.通用开源Flash 3D渲染引擎中Papervision3D是基于ActionScript的开源项目,而Flash在3D领域的应用相对贫乏,在Flash Player中播放,则具备体积小、与用户交互能力强、效果逼真的3D Web应用程序特点.     

980nm半导体激光器可靠性的研究现状分析

本文介绍了提高980nm半导体激光器可靠性的几种方案,并做了综合评述。进一步介绍了离子辅助镀膜技术在提高980nm激光器可靠性方面的应用。     

Implementation of high-k and metal gate materials for the 45 nm node and beyond: gate patterning development

We report on gate patterning development for the 45 nm node and beyond. Both poly-Si and different metal gates in combination with medium-k and high-k dielectrics have been defined. Source/drain silicon recess has been characterized for different stacks, yielding optimised processes for all investigated. Using hardmask based etching allowed us to produce sub-20 nm poly-Si and metal gates. Implementation of advanced metal gate patterning in already developed multi-gate field effect transistors (MuGFET) devices has been demonstrated.