ZnO:Al(ZAO)透明导电薄膜国内的研究现状

综述了以氧化锌铝陶瓷靶为靶材制备透明导电ZAO薄膜的制备技术,系统地研究了各工艺参数,如氩气压强、射频功率、衬底基片温度、退火条件和氧流量等对其结构和光电特性的影响。在纯氩气中且衬底温度为300℃时制备的ZAO薄膜经热处理后电阻率可降至8.7×10-4Ω.cm,可见光透过率在85%以上。X射线衍射谱表明,ZAO晶粒具有六角纤锌矿结构且呈c轴择优取向,晶粒垂直于衬底方向柱状生长。     

不同生长温度对Ga掺杂ZnO透明导电薄膜性能的影响

采用磁控溅射方法在普通载玻片衬底上制备了Ga掺杂的ZnO(GZO)透明导电薄膜,并研究了不同生长温度对GZO透明导电薄膜的结构性能、电学性能及光学性能的影响.制备的GZO透明导电薄膜均沿(002)方向的择优取向生长,薄膜的表面形貌为蠕虫状,表明薄膜内存在较大的残余应力.随着生长温度的升高,GZO薄膜的电阻率先减小后增大,在生长温度为250℃时,薄膜的最低电阻率为1.91×10-3 Ωcm.不同生长温度下所制备的GZO薄膜在可见光波段的平均透过率均大于90％,薄膜具有优异的光学特性.     

射频磁控溅射法制备Ti掺杂ITO薄膜的厚度对膜结构与光电性能的影响

利用Ti掺杂ITO靶材,采用单靶磁控溅射法在玻璃基底上制备厚度为50~300 nm的ITO:Ti薄膜。借助X射线衍射(XRD)、原子力显微镜(AFM)、可见光分光光度计、霍尔测试系统和四探针电阻测量仪,研究薄膜厚度对薄膜的晶体结构、表面形貌和光电性能的影响。结果表明:ITO:Ti薄膜呈现(400)择优取向,随薄膜厚度增加,薄膜的结晶程度增强,晶粒度增大,薄膜更致密。随薄膜厚度增加,薄膜的均方根粗糙度和平均粗糙度以及电阻率都先减小再增加,薄膜厚度为250 nm时,表面粗糙度最小,蒋膜厚度为200 nm时,电阻率最低,为2.1×10-3?·cm。不同厚度的薄膜对可见光区的平均透过率都在89%以上。     

无机溶胶凝胶法制备掺钨二氧化钒薄膜研究

采用钒-钨混合溶胶及浸渍提拉法在玻璃基片上涂五氧化二钒膜,再通过氢还原法制备掺钨二氧化钒薄膜.采用XRD及XPS等测试方法对薄膜的相组成进行分析.研究了获得稳定的钨和钒混合溶胶及氢还原制备掺钨二氧化钒薄膜的条件.实验证明采用无机溶胶凝胶法制备掺钨二氧化钒薄膜可将二氧化钒薄膜的相变温度点降低到室温范围.在相变温度点附近,掺钨VO2薄膜的电阻率、近红外光透过率将发生较显著变化,可见光透过率随钨掺杂含量升高而降低.     

ZnO∶Tb透明导电薄膜的制备及其特性研究

用RF磁控反应共溅射法在Si( 111)衬底上制备出了铽 (Tb)掺杂的ZnO透明导电薄膜。研究了溅射中Tb掺杂量对ZnO薄膜的结构、电学和光学特性的影响。结果表明 ,在最佳沉积条件下我们制备出了具有良好c轴取向 ,电阻率降低到 9.3 4× 10 - 4Ω·cm ,且可见光段 ( 4 0 0～80 0nm)平均透过率大于 80 %的ZnO∶Tb新型透明导电材料。     

生长温度和退火气氛对ZnO:Al薄膜结构与性能的影响

采用直流磁控溅射法在玻璃衬底上制备ZnO:Al透明导电薄膜,研究生长温度和退火气氛对薄膜结构、形貌、光学和电学性能的影响。结果表明:不同温度下生长的ZnO:Al薄膜均为高度c轴取向的六角铅锌矿结构,400~900 nm波长范围内薄膜的平均透过率均超过85%。ZnO:Al薄膜的电学性能强烈依赖于生长温度,室温~500℃范围内,500℃下生长的薄膜具有最大的载流子浓度(2.294×1021 cm-3)和最低电阻率(4.095×10-4-.cm)。退火气氛对薄膜的性能影响显著,经过不同气氛退火后,薄膜的表面粗糙度降低,结晶质量和光学性能有所提高;在O2、N2、空气等气氛下退火,薄膜的载流子浓度降低,电阻率上升;Ar和真空退火时,薄膜载流子浓度上升,电阻率显著下降。     

Zn-Sn-O透明导电膜的制备和光电性质

采用射频磁控溅射法在 70 5 9玻璃衬底上低温制备出Zn Sn O透明导电薄膜。制备薄膜为非晶结构 ,并且具有很好的稳定性 ,与玻璃衬底具有良好的附着性。薄膜主要是依靠膜中的氧空位导电 ,薄膜的电阻率强烈地依赖溅射气体中的氧分压。制备薄膜的最低电阻率为 2 2 7×10 - 3Ω·cm ,在可见光范围内的平均透过率达超过 90 %。     

Cu(In,Ga)Se_2太阳能电池窗口层ZnO∶Al薄膜的研究

用射频磁控溅射氧化锌掺铝陶瓷靶的方法在玻璃衬底上制备了ZnO∶Al薄膜。研究了衬底温度(Ts)、靶基距(Dt-s)对薄膜结构及光电性能的影响。实验结果显示:Ts在室温至300℃、Dt-s在35~60 mm范围内时,薄膜为六方相结构,并具有C轴取向,可见光范围平均透光率大于88%。Ts及Dt-s对薄膜电学性能的影响相似,随Ts升高或Dt-s增大,ZnO∶Al薄膜的电阻率先减小后增大,霍尔迁移率先增大后减小,载流子浓度逐渐减小。在Ts为150℃,Dt-s为40 mm时,可获得最低电阻率4.18×10-4Ω.cm的ZnO∶Al薄膜,其载流子浓度为8.13×1020cm-3、霍尔迁移率为18 cm2.V-.1s-1,可见光范围平均透过率为89%。     

氧分压对射频磁控溅射制备氧化锌薄膜光电学性质的影响

利用射频磁控溅射在石英基片上沉积ZnO薄膜.为了研究氧分压对ZnO薄膜的结构和光电学性质的影响,在氧分压0.00,2.54,5.06,7.57 mPa的条件下制备了4个样品.样品的微结构、表面形貌和光电学性质分别用X射线衍射仪、原子力显微镜、分光光度计和Van der Pauw方法进行测量.结果表明,所有样品的主要衍射峰为(002)峰,随氧分压的增加,(002)峰的强度降低,且出现了(101)面的衍射峰.氧分压的升高,薄膜的表面粗糙度和载流子浓度减小,迁移率增大,电阻率从氧分压为0时的0.2 Ωcm增加到7.57 mPa时的1 400 Ωcm.所有样品在可见光区的平均透过率都大于83%,薄膜的折射率随氧分压的增加而增大,而消光系数和光学带隙则减小.     

ZnO缓冲层对W掺杂VO_2薄膜光电性能的影响

用磁控溅射法在载玻片基底上分别制备W-VO2单层薄膜与ZnO/W-VO2双层薄膜,并在Ar气氛中进行退火。用X射线衍射仪、LCR测试仪、扫描电镜、紫外-可见分光光度计和红外光谱仪对薄膜样品的晶体结构、电阻-温度特性、表面形貌、可见光透过率和红外光透过率进行测试。结果表明:ZnO/W-VO2双层薄膜的相变温度降低至35℃,薄膜生长更加致密均匀,可见光透过率提高约23%,对红外光的屏蔽效果更优。     

Ultraviolet-shielding and conductive double functional films coated on glass substrates by sol-gel process

Ultraviolet-shielding and conductive double functional films were composed of CeO2-TiO2 film and SnO2:Sb film deposited on glass substrates using sol-gel process.Ce(NO3)3·6H2O and Ti(C4H9O4),SnCl4 and SbCl3 were used as precursors of the two different functional films respectively.The CeO2-TiO2 films were deposited on glass substrates by sol-gel dip coating method,and then the SnO2:Sb films with different thickness were deposited on the pre-coated CeO2-TiO2 thin film glass substrates,finally,the substrates coated with double functional films were annealed at different temperatures.The optical and electrical properties of the CeO2-TiO2 films and the double films were measured by UV-Vis spectrometer and four probe resistance measuring instrument.The crystal structures and surface morphology of the films were characterized using XRD and optical microscope,respectively.The obtained results show that the ultraviolet-shielding rate of the glass substrates with CeO2-TiO2 films is not less than 90%,and transmittance in visible lights can reach 65%.With the thickness of the SnO2:Sb film increasing,its conductivity became better,and the surface resistance is about 260 Ω/ when the SnO2:Sb films were deposited 11 cycles of the dip on the pre-coated CeO2-TiO2 glass.The ultraviolet-shielding rate of the glass substrates with double functional films is higher than 97%,and the peak transmittance in the visible lights is 72%.Additionally,with increasing the heat treatment time,the Na+ of the glass substrates diffuses into the films,resulting in the particle size of SnO2 crystal smaller.     

Effect of film thickness on magnetic properties of Cr/SmCo/Cr films

Cr/SmCo/Cr films with different SmCo thickness were deposited on glass substrates by magnetron sputtering,followed by an annealing process at 550 °C for 20 min.Experimental results showed that the SmCo film of 30 nm exhibited two-phase behavior in the demagnetization process,the obvious kink was observed near zero.For the SmCo film of 50 nm,the kink was invisible,and a single phase like behavior was obtained in the demagnetization process.The reversal behavior became consistent in the thicker films.Moreover,the coercivity reduced and the saturated magnetization increased obviously with the increasing thickness.X-ray diffraction results indicated that the average grain size of SmCo 5 in the thicker films were almost 30 nm,but the quantity of SmCo 5 grains increased with the increasing thickness,which enhanced the intergrain exchange coupling(IEC) of the SmCo 5 hard phases.The increase of IEC improved the magnetic properties of SmCo films with increasing thickness.     

Structural,Morphological, Opto-Electrical and Photoluminescence Studies of Nanoplate Structured Zn-Doped Sn<Subscript>2</Subscript>S<Subscript>3</Subscript> Thin Films

Undoped and Zn-doped Sn₂S₃ thin films were fabricated by spray pyrolysis technique on glass substrates kept at 400 °C. All the films exhibited orthorhombic crystal structure with a preferential orientation along the (2 1 1) plane. Nanoplate structures were observed from the SEM images and the presence of Zn in the doped films was confirmed from the EDX spectra. The average optical transmittance of all the films in the visible region was found to be nearly equal to 80 %. Film resistivity initially decreased from 3.27 × 10^?1 to 0.78 × 10^?1 Ω-cm for the Sn₂S₃ thin film doped with 1 wt% Zn concentration and for higher doping concentration it increased. The obtained results showed that the Sn₂S₃ thin film doped with 1 wt% Zn concentration had better physical properties which made them suitable for photovoltaic applications.     

碳纳米管薄膜的制备及其性能的研究

采用喷涂和旋涂相结合的方法,在干燥洁净的石英基质上制备了均匀的碳纳米管薄膜．利用高分辨透射电子显微镜（JEM-2010F）对碳纳米管原料的形态进行了观察．利用紫外一可见分光光度计（UV-2550）和四探针电阻测试仪（RTS-8）分别测量了碳纳米管薄膜的透光率和电阻．考察了制备方法、加热温度、碳纳米管浓度和薄膜厚度等不同因素对薄膜透光率和电阻的影响．结果表明,选择适宜的参数可以制备出透明导电的碳纳米管薄膜,且具有良好的电学和光学特性：透光率和电阻分别可以达到83％和800Ω     

AZO透明导电膜电磁散射光电参数影响试验

采用常温镀膜技术在浮法玻璃表面沉积了不同方块电阻的氧化锌铝(Al-doped zinc oxide,AZO)透明导电膜,建立了透明导电膜的雷达散射截面(radar cross section,RCS)测试和研究方法;提出了基于雷达散射截面均值的相对反射率概念,结合方块电阻和可见光透过率综合分析了氧化锌铝透明导电膜的电磁散射特性.在微波暗室对不同方块电阻的氧化锌铝透明导电膜进行了测试,得到了10 GHz和15 GHz入射频率,水平(horizontal horizontal,HH)、垂直(vertical vertical,VV)极化的雷达散射截面曲线;从飞行器座舱隐身角度出发,研究了前向20°和60°角域雷达散射截面曲线分布特点,并分析了雷达散射截面均值影响特性;基于氧化锌铝透明导电膜雷达散射截面测试结果,研究了方块电阻对雷达散射截面相对反射率和可见光透过率的影响规律.研究表明,方块电阻较低时雷达散射截面曲线分布特性与对应金属相似,方块电阻增大时,前向两个角域内的RCS均值减小,隐身性能减弱,雷达散射截面相对反射率降低而可见光透过率增加,相对反射率降低速率大小与方块电阻相关,合适的方块电阻可同时满足隐身及采光需求.暗室测试结果表明,在满足座舱可见光透过率前提下,氧化锌铝透明导电膜方块电阻为18~45 Ω时,具有外形隐身作用,方块电阻18 Ω为最优,对应RCS相对反射率Re_m2和Re_dB分别为84%和0.73 dB.      

Analysis and Characterization of Relationships Between the Processing and Optical Responses of Amorphous BaTiO3 Nanothin Films Obtained by an Improved Wet Chemical Process

In the present work, we have tried to study and develop the processing of amorphous BaTiO₃ nanothin films, which have amorphous structure and nanometric thickness. It was seen that they exhibit enhanced optical responses. An improved method was used to prepare amorphous BaTiO₃ nanothin films, which, compared to other approaches, is simple, cost-effective, and environmentally friendly. It was found that amorphous BaTiO₃ films exhibit better optical transmittance in contrast to the similar nanocrystalline, polycrystalline, or thick films. This finding is due to the absence of grain boundaries, which have an important role in light scattering processes. AFM and SEM results indicate that the surface of the nanothin film is uniform, smooth, and amorphous. Moreover, the surface of the nanothin film exhibits a dense structure with no crack and voids. RMS roughness of the prepared nanothin film was quite small and equal to 0.7 nm. This value is very less than other reported RMS roughness values which were in the range of 5 to 11 nm. XRD results indicate that all of the prepared thin films in this work are amorphous, independent of number of dip-coated layers and preparation conditions. The work also aims to study and develop the processing of the amorphous BaTiO₃ nanothin films deeply. The results showed that annealing temperature has a more pronounced effect on transmittance, thickness, and shift in the absorption edge of the thin films than annealing time. It was found that the viscosity of the sol has remarkable influence on the transmission spectrum and shift in the absorption edge of the films. The transparency of the films decreases with an increase in the viscosity and concentration of the sol. It was found that size of particle within the sol and rate of the sol–gel reactions have important roles on the transmittance of the films.     

Growth and Characterization of Semi-Insulating GaN Films Grown by MOCVD

High resistivity unintentionally doped GaN films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. The surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. The results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. The full width at half maximum of double crystal X-ray diffraction rocking curve for (0002) GaN is about 5.22 arcmin, indicative of high crystal quality. The resistivity of the GaN epilayers at room temperature and at 250 ℃ was measured to be approximate 109 and 106 Ω·cm respectively, by variable temperature Hall measurement. Deep level traps in the GaN epilayers were investigated by thermally stimulated current and resistivity measurements.     

酸性条件下水浴沉积时间对硫化镉薄膜特性的影响

基于化学水浴法,以硫代乙酰胺为硫源、氯化镉为镉源、尿素为缓冲剂,在酸性条件下制备了CdS薄膜。采用台阶仪、X射线衍射仪、扫描电镜和紫外/可见光分光光度计,研究了酸性条件下化学水浴沉积时间对硫化镉薄膜厚度、结构、形貌和光学特性的影响。结果表明,沉积所得的CdS薄膜为六角纤维锌矿结构。随着沉积时间的延长,薄膜厚度和晶粒尺寸随之增大,带隙随之减小。当沉积温度为80℃,沉积时间为30min时,CdS薄膜可见光波段平均透过率接近80%。