源漏轻掺杂结构多晶硅薄膜晶体管模拟研究

采用同型结模型模拟计算了源漏轻掺杂结构的关态漏析电流,同时考虑热电子效应修正漏极电流模拟结果,使漏极电流降低到10^-11A量级,晶体管的开关电流比值达到10^6量级,模拟研究掺杂区浓度和宽度与多晶硅薄膜晶体管开关电流比的变化关系。     

多晶硅薄膜晶体管液晶显示器件的优化设计

针对多晶硅薄膜晶体管液晶显示器件关态漏电流较大的问题,采用源漏轻掺杂结构以降低关态时电荷的泄漏,增加晶体管的开关电流比值,通过模拟轻掺杂区不同的物理参数,如掺杂浓度及掺杂区宽度等,研究薄膜晶体管的开关电流比值,由此确定像素各部分的尺寸,对液晶显示器件进行优化设计。     

多晶硅薄膜晶体管工艺中的反应性离子刻蚀

对多晶硅薄晶体管器件工艺中的反应性离子刻蚀技术进行研究，给出了Ta、p-Si等多晶硅薄膜晶体管器件中常见薄膜的刻蚀速率，通过工艺参数的优化，使薄膜间的选择比在2-20，可选择；并通过气体掺杂，实现了SiNx对p-Si的选择比从-1到2的反转。     

多晶硅薄膜晶体管泄漏电流建模

泄漏电流是多晶硅薄膜晶体管应用的一个主要问题,多晶硅薄膜晶体管泄漏电流的建模对集成多晶硅薄膜晶体管设计和工艺改进具有重要意义.本文以陷阱辅助热电子场致发射理论为基础,通过对物理模型的近似处理,提出了一个在大的栅压范围和温度范围内与实验数据吻合较好的多晶硅薄膜晶体管泄漏电流解析模型.模型适合于电路仿真器.     

基于FPGA的面阵CCD驱动及快速显示系统的设计实现

为了实现面阵CCD传感器采集的数据在TFT液晶屏上的快速显示,提出一种基于现场可编程逻辑门阵列(FPGA)的快速显示系统。利用FPGA构建软核处理器(NiosII),采用专用IC模块AD9929作为CCD驱动与处理芯片,并依据TFT液晶屏和芯片AD9929的接口时序设计驱动电路,利用DMA技术实现采集数据的快速显示。电路的测试结果表明,利用该方法可以把面阵CCD传感器采集的数据快速显示在TFT液晶屏上,在工业现场监视场合具有广泛的实用性。     

基于改善AMOLED TFT均匀性和稳定性像素补偿电路

有机发光二极管显示器(OLED)正越来越多地用于中小尺寸的显示,但在大尺寸方面进展缓慢,因为在有源大尺寸方面对OLED的稳定性和均匀性要求较高,需要设计像素补偿电路。各研究机构提出了像素补偿电路用于改善OLED的均匀性和稳定性等问题,文中对目前采用有源OLED的α-Si TFT和p-Si TFT的各种像素补偿电路进行了分析。分析结果表明,文中设计方案取得了一定的效果,但尚存不足。     

薄膜晶体管研究进展

薄膜晶体管是液晶显示器的关键器件，对显示器件的工作性能具有十分重要的作用。本文论述了薄膜晶体管的发展历史，描述了薄膜晶体管的工作原理，分析了非晶硅薄膜晶体管、多晶硅薄膜晶体管、有机薄膜晶体管、ZnO活性层薄膜晶体管的性能结构特点与最新进展，并展望了薄膜晶体管的应用。     

A Testing Method on Poly-Si Thin-Film Transistor Array for Active-Matrix Organic Emitting Display

A novel method is introduced using to evaluate the quality of thin-film transistor (TFT) array for driving active-matrix display (OLED). By the means of this method, the operation states of the TFT or the defects of TFT can be judged. It is a current testing method with the advantages of fast response, excellent precision, no effect to aperture and no damage to the display array.     

多适配性有源驱动液显示器

本文从ＡＭ－ＬＣＤ应用于高信息容量图象显示的角度,提出了多适配性小型ＡＭ－ＬＣＤ的设计方案,并通过用于眼科Ａ／Ｄ超声仪对设计方案进行了验证。在多种输入信号的情况下均获得了对整机显示效果具有重要意义的Ｖｓｙｓ,Ｈｓｙｓ和点时钟信号。     

Floating-island TFT leakage caused by process step reduction

The leakage mechanism for a top-gate thin-film transistor (TFT) produced using the fewest process steps in the industry is analyzed in order to achieve a high-contrast liquid crystal display (LCD). Using a T-shaped TFT structure, the OFF and ON channel lengths are defined independently, so that the leakage can be reduced with no ON current decrease     

Dynamic Pixel Models for a‐Si TFT‐LCD and Their Implementation in SPICE

A dynamic analysis of an amorphous silicon (a‐Si) thin film transistor liquid crystal display (TFT‐LCD) pixel is presented using new a‐Si TFT and liquid crystal (LC) capacitance models for a Simulation Program with Integrated Circuit Emphasis (SPICE) simulator. This dynamic analysis will be useful when predicting the performance of LCDs. The a‐Si TFT model is developed to accurately estimate a‐Si TFT characteristics of a bias‐dependent gate to source and gate to drain capacitance. Moreover, the LC capacitance model is developed using a simplified diode circuit model. It is possible to accurately predict TFT‐LCD characteristics such as flicker phenomena when implementing the proposed simulation model.     

200mm×200mm OLED步进投影曝光机

有机发光二极管(OLED)尤其是AMOLED由于其独特的性能,其可能成为下一代显示技术。目前AMOLED显示还未达到量产之前,200 mm×200 mm的研发线对于AMOLED技术工艺验证尤为重要。AMOLED对TFT曝光的要求(CD均匀性、套刻精度等)较TFT-LCD高。基于此,介绍了可用于OLED研发要求的步进投影曝光机SS B200/10A,实测数据及显示器件成功开发表明该设备能够很好地满足AMOLED工艺要求。     

Improvement of Hydrogenated Amorphous-Silicon TFT Performances With Low-$k$Siloxane-Based Hydrogen Silsesquioxane (HSQ) Passivation Layer

A low-dielectric-constant (low-k)-material siloxane-based hydrogen silsesquioxane (HSQ) is investigated as a passivation layer in bottom-gate hydrogenated amorphous-silicon thin-film transistors (a-Si : H TFTs). The low-k HSQ film passivated on TFT promotes the brightness and aperture ratio of TFT liquid-crystal display due to its high light transmittance and good planarization. In addition, the performance of a-Si : H TFT with HSQ passivation has been improved, compared to a conventional silicon nitride (SiN_x)-passivated TFT because the hydrogen bonds of HSQ assist the hydrogen incorporation to eliminate the density of states between the back channel and passivation layer. Experimental results exhibit an improved field-effect mobility of 0.57 cm²/Vmiddots and a subthreshold swing of 0.68 V     

Simulation of Active-Matrix Electrophoretic Display Response Time Optimization by Dual-Gate a-Si:H TFT With a Common Gate Structure

Large off-state drain-source current of the thin-film transistor (TFT) in active-matrix electrophoretic display (AMEPD) pixel leads to dramatic data voltage degradation, which causes severe crosstalk and undesired large response time. In this paper, the leakage current influence on response time is investigated and simulated. A compact model of response time t versus off-state drain-source current I _off is established. The simulation result induces that by reducing I _off the response time can be efficiently shorted. In order to reduce the off-state current, dual-gate amorphous silicon (a-Si:H) TFT with a common gate structure is discussed. Its current regulation mechanism is illustrated, and its fitness for driving the AMEPD pixel is explained. The SPICE simulation results prove that except reducing the crosstalk, dual-gate a-Si TFT can also significantly short the response time by cutting down the off-state current under the operation conditions of AMEPD application, while insignificantly reduces the on-state current.     

车载中小型显示终端应用研究

本文应用MSTAR公司推出的MST717C显示驱动芯片驱动TFT液晶显示屏,作为车载多媒体信息显示终端,具有成本低廉、显示效果好、应用简单等特点。重点讲述了MST717C外围电路的设计以及基于MSTAR公司Maria软件架构的开发,对TFT液晶显示屏驱动开发者具有一定的帮助作用。     

遮风板角度控制系统设计及优化

为实现遮风板角度控制,提出了一种以增强型单片机STC12C5A60S2为主控电路,3.0英寸TFT彩屏为显示单元,MMA7260Q加速传感器采集的模拟信号经12位A/D转换器TLC2543CN转换为数字角度信号,通过单片机处理信号,显示屏显示实时角度和PID调节,控制遮风板转角的设计方案。实验结果表明,该系统精度较高,并能够进行自动修正,达到设计要求。     

多晶硅薄膜晶体管RPI模型的直流参数提取

多晶硅薄膜晶体管(TFT)在有源液晶显示器中的应用充分显示了它的性能优点。对多晶硅TFT进行模型分析和参数提取是理解多晶硅TFT工作原理和指导制备的有效途径。归纳并讨论了多晶硅薄膜晶体管RPI模型直流参数的提取策略。此参数提取步骤简单,并能准确地提取所有工作区的基本直流参数,如阈值电压、漏源区串联寄生电阻、有效沟道长度、迁移率等。参数提取的方法将为RPI模型的电路仿真提供有益的参考。最后,提出了改进RPI模型参数提取策略的方向,包括提高泄漏电流参数、迁移率参数的准确度等。     

EL characteristics of a TFEL/TFT stacked structure display devicedriven by a HV-Si·TFT circuit

TFEL/TFT stacked structure display devices were fabricated onto a quartz substrate. By using a HV-TFT circuit as the basis of a TFEL/TFT device, an EL device on the TFT circuit can be switched at a sufficiently low signal line voltage of V_s=2-3 V. The maximum brightness of the TFEL/TFT device is 230 cd/m² and the ON/OFF brightness ratio is more than 90 between Vs=0 and Vs=4 V at a V_app frequency of 5 kHz and a voltage of 50. Evaluation of the dynamic behavior of TFT circuits using multichannel HV-Si·TFT's showed that the rise time of the fundamental TFT circuit at the EL driving point of the circuit was about 20 μs and that the hold time of the circuit was about 70 mS. The rise time and the fall time of the luminescence were each about 20 μs. The memory characteristics of the TFEL/TFT device showed that the hold time of the luminescence was about 40 mS. These dynamic characteristics of the TFEL/TFT stacked structure device satisfy the conditions required for a flat panel display     

非晶氧化物半导体薄膜晶体管沟道层的研究进展

薄膜晶体管(TFT)作为开关元件广泛应用于平板显示领域,沟道层材料的选择直接影响了TFT的性能.近年来,基于非晶氧化物半导体(AOS)沟道层材料的TFT已成为具有潜力替代传统硅材料(非晶硅或多晶硅)沟道层TFT的新一代技术,有望应用于超大屏显示、3D显示、柔性显示以及透明显示等新一代显示领域.综述了AOS TFT沟道层的研究进展,重点介绍了AOS TFT用AOS沟道层在材料体系、成膜技术、薄膜的后续处理工艺、材料体系中各元素含量以及掺杂等方面的研究成果,并分析了AOS沟道层对AOS TFT性能的影响以及存在的问题,对AOS TFT的未来发展趋势进行了预测和展望.     

S3C2440A驱动RGB接口TFT LCD的研究

介绍了一款较典型的TFI型液晶屏的接口时序和逻辑要求,设计了嵌入式微处理器S3C2440A与该款带触摸屏功能的TFT LCD模组的接口电路,基于嵌入式Linux系统开发驱动程序,完成了RGB接口显示参数设置、图形界面显示调整及触摸屏控制等功能,实现了系统清晰、稳定的显示.实验表明,该方案通用性好,可以驱动不同分辨率的TFT LCD并提供显示与触摸控制功能;可移植性强,可以为各种嵌入式系统提供一个驱动TFT LCD的完整解决方案.