Structure and electrical properties of PbZrO3 antiferroelectric thin films doped with barium and strontium

In this paper, we report on the structure and electrical properties of lead zirconate (PbZrO₃) thin films doped with barium (Ba²⁺) and strontium (Sr²⁺) deposited on platinum-buffered silicon substrates by a sol-gel method. Effects of Ba²⁺ and Sr²⁺ dopants on microstructure and electrical properties of the PbZrO₃ antiferroelectric thin films were investigated in details. X-ray diffraction patterns and scanning electron microscope micrographs illustrated that orientation and surface microstructure of these antiferroelectric films were dopant-dependent. The dielectric measurements showed that Sr²⁺ doping stabilized the antiferroelectric phase, while Ba²⁺ doping destabilized the antiferroelectric phase. It was also found that fatigue property of the antiferroelectric PbZrO₃ thin films was improved remarkably by the dopants.     

Properties of multilayer gallium and aluminum doped ZnO(GZO/AZO) transparent thin films deposited by pulsed laser deposition process

Multilayer gallium and aluminum doped ZnO (GZO/AZO) films were fabricated by alternative deposition of Ga-doped zinc oxide(GZO) and Al-doped zinc oxide(AZO) thin film by using pulsed laser deposition(PLD) process. The electrical and optical properties of these GZO/AZO thin films were investigated and compared with those of GZO and AZO thin films. The GZO/AZO (1:1) thin film deposited at 400 °C shows the electrical resistivity of 4.18×10^?4 ωcm, an electron concentration of 7.5×10²⁰/cm³, and carrier mobility of 25.4 cm²/(V·s). The optical transmittances of GZO/AZO thin films are over 85%. The optical band gap energy of GZO/AZO thin films linearly decreases with increasing the Al ratio.     

Effect of lanthanum doping on linear and nonlinear-optical properties of Bi3TiNbO9 thin films

Lanthanum doped Bi₃TiNbO₉ thin films (LBTN-x, La³⁺ contents x = 5%, 15%, 25% and 35 mol.%) with layered perovskite structure were fabricated on fused silica by pulsed laser deposition method. Their linear and nonlinear optical properties were studied by transmittance measurement and Z-Scan method. All films exhibit good transmittance (>55%) in visible region. For lanthanum doping content are x = 5%, 15% and 25 mol.%, the nonlinear absorption coefficient of LBTN-x thin films increases with the La³⁺ content, then it drops down at x = 35 mol.% when the content of La³⁺ in (Bi₂O₂)²⁺ layers is high enough to aggravate the orthorhombic distortion of the octahedra. We found that, 25 mol.% is the optimal La³⁺ content for LBTN-x thin films to have the largest nonlinear absorption coefficient making the LBTN-x film a promising candidate for absorbing-type optical device applications.     

Nickel-lithium oxide alloy transparent conducting films deposited by spray pyrolysis technique

In this research, nickel oxide (NiO) transparent semiconducting films are prepared by spray pyrolysis technique on glass substrates. The effect of Ni concentration in initial solution and substrate temperature on the structural, electrical, thermoelectrical, optical and photoconductivity properties of NiO thin films are studied. The results of investigations show that optimum Ni concentration and suitable substrate temperature for preparation of basic undoped NiO thin films with p-type conductivity and high optical transparency is 0.1 M and 450 °C, respectively. Then, by using these optimized deposition parameters, nickel-lithium oxide ((Li:Ni)O_x) alloy films are prepared. The XRD structural analysis indicate the formation of the cubic structure of NiO and (Li:Ni)O_x alloy films. Also, in high Li doping levels, Ni₂O₃ and NiCl₂ phases are observed. The electrical measurements show that the resistance of the films decreases with increasing Li level up to 50 at%. For these films, the optical band gap and carrier concentration are obtained to be 3.6 eV and 10¹⁵-10¹⁸ cm⁻³, respectively.     

Growth and Characterization of Lu2O3:Eu3+ Thin Films on Single-Crystal Yttria-Doped Zirconia

Lu₂O₃ doped with Eu³⁺ has been established as an excellent scintillator material for numerous applications such as lasers, optical lenses, and radiography. The material is typically manufactured via hot pressing. This process, apart from being prohibitively expensive, can also introduce major structural defects because it requires grinding/polishing to achieve high transparency and spatial resolution. To overcome these process limitations that have restricted the commercial viability of Lu₂O₃:Eu³⁺ scintillators, a technique to deposit thin films (1–10 μm) of Lu₂O₃:Eu³⁺ has been developed. This investigation characterized the growth of such thin films by radio frequency (RF) magnetron sputtering on single-crystal cubic yttria doped zirconia (YSZ) substrates. At a deposition rate of 3.3 Å/s, the effects of substrate heating and orientation on coating structure property and the resultant effect on performance were evaluated. Additionally, the effect of deposition parameters and growth conditions on the radioluminescence of the coatings, excited by x-rays, was systematically examined.     

Nanocrystalline p-type-cuprous oxide thin films by room temperature chemical bath deposition method

Nanocrystalline cuprous oxide (Cu₂O) thin films were synthesized on amorphous glass substrate by using simple room temperature chemical route namely, chemical bath deposition (CBD) method. The deposition kinetics played important role to get good quality nanocrystalline films with uniform thickness. The structural, surface morphological, optical and electrical properties of the films were investigated. Crystallization and growth processes obtained micro-spherical shaped grains of Cu₂O due to agglomeration of smaller nanoparticles. An optical and electrical characterization was performed to study the optical band gap and type of electrical conductivity of the film.     

Effect of annealing temperature on ferroelectric properties of （Bi, Nd）4（Ti, V）3O12 thin films

Thin films of Nd^3＋/V^5＋-cosubstituted bismuth titanate, （Bi3.sNd0.5）（ Ti2.96V0.04）O12 （BNTV）, were fabricated on the Pt（111）/Ti/SiO2/Si（100） substrates by a chemical solution deposition technique and annealed at different temperatures of 650, 700, 750 and 800 ℃. The surface morphology and ferroelectric properties of the samples were studied in detail. The result shows that the film annealed at 800 ℃ indicates excellent ferroelectricity with a remanent polarization of 2Pr=40.9 i.tC/cm^2, a coercive field （Ec） of 114 kV/cm at an applied electrical field of 375 kV/cm. The substitution of Ti-site ion by V^5＋ ions could improve the upper limit of the optimal annealing temperature by decreasing the space charge density in BNT thin film. Additionally, the mechanism concerning the dependence of ferroelectric properties of BNTV thin films on the annealing temperature was discussed.     

Filtered vacuum arc deposition of undoped and doped ZnO thin films: Electrical, optical, and structural properties

Filtered vacuum (cathodic) arc deposition (FVAD, FCVD) of metallic and ceramic thin films at low substrate temperature (50-400 °C) is realized by magnetically directing vacuum arc produced, highly ionized, and energetic plasma beam onto substrates, obtaining high quality coatings at high deposition rates. The plasma beam is magnetically filtered to remove macroparticles that are also produced by the arc. The deposited films are usually characterized by their good optical quality and high adhesion to the substrate. Transparent and electrically conducting (TCO) thin films of ZnO, SnO₂, In₂O₃:Sn (ITO), ZnO:Al (AZO), ZnO:Ga, ZnO:Sb, ZnO:Mg and several types of zinc-stannate oxides (ZnSnO₃, Zn₂SnO₄), which could be used in solar cells, optoelectronic devices, and as gas sensors, have been successfully deposited by FVAD using pure or alloyed zinc cathodes. The oxides are obtained by operating the system with oxygen background at low pressure. Post-deposition treatment has also been applied to improve the properties of TCO films.The deposition rate of FVAD ZnO and ZnO:M thin films, where M is a doping or alloying metal, is in the range of 0.2-15 nm/s. The films are generally nonstoichiometric, polycrystalline n-type semiconductors. In most cases, ZnO films have a wurtzite structure. FVAD of p-type ZnO has also been achieved by Sb doping. The electrical conductivity of as-deposited n-type thin ZnO film is in the range 0.2-6 × 10^− 5 Ω m, carrier electron density is 10²³-2 × 10²⁶ m^− 3, and electron mobility is in the range 10-40 cm²/V s, depending on the deposition parameters: arc current, oxygen pressure, substrate bias, and substrate temperature. As the energy band gap of FVAD ZnO films is ∼ 3.3 eV and its extinction coefficient (k) in the visible and near-IR range is smaller than 0.02, the optical transmission of 500 nm thick ZnO film is ∼ 0.90.     

Preparation and characterization of Mg-doped CaCu3Ti4O12 thin films

Mg-doped CaCu_3?xMg_xTi₄O₁₂ (x=0, 0.05, 0.1, 0.15, 0.2, at.%) thin films were prepared by a modified sol?gel method. A comparative study on the microstructure and electrical properties of Mg-doped CaCu₃Ti₄O₁₂ (CCTO) thin films was carried out. The grain sizes of the Mg-doped CCTO thin films were smaller in comparison to the undoped CCTO films. Furthermore, compared to undoped CCTO films, Mg-doped CCTO thin films obtained higher dielectric constant as well as excellent frequency stability. Meanwhile, Mg doping could reduce the dielectric loss of CCTO thin films in the frequency range of 10⁴?10⁶ Hz. The results showed that the Mg-doped CCTO thin films had the better electrical characteristics compared with the undoped CCTO films. The nonlinear coefficient of Mg-doped CCTO thin films at x=0.15 and x=0.1 was improved to 7.4 and 6.0, respectively.     

Structural,electrical, and optical properties of reactively sputtered SnO<Subscript>2</Subscript> thin films

SnO₂ thin films prepared by reactive rf magnetron sputtering have been investigated to examine the effect of deposition parameters on its crystallinity and electrical and optical properties. Of particular interest was whether the nonequilibrium nature of sputtering could create large departures from the bulk defect properties, especially in amorphous films. Two deposition parameters were examined: substrate temperature (T_sub) and oxygen content. The films were characterized by X-ray diffraction (XRD), optical transmission, four point probe electrical conductivity, and Hall effect measurements. The crystallinity was found to be enhanced by the incease in each of the three processing variables. Below a substrate temperature of 300 °C a large processing window for depositing amorphous SnO₂ was found.     

Influence of excitation frequency on structural and electrical properties of spray pyrolyzed CuInS2 thin films

This paper reports the cost effective deposition of the copper indium sulfide (CuInS₂) thin films under atmospheric conditions via ultrasonic spray pyrolysis. Structural and electrical properties of these films have been tailored by controlling the nozzle excitation frequency and the solution loading. Smoother films have been obtained via 120 kHz excitation frequency compare to the 48 kHz. Band gap energy of the films has also been tailored via excitation frequency. UV–vis–NIR analysis revealed that films deposited at 48 kHz excitation frequency had lower band gap energies. Although, both excitation frequencies resulted chalcopyrite structure, crystallinity of the CuInS₂ films was better for 120 kHz. On the other hand, better optical absorption in visible and near infrared region was observed at 48 kHz. Moreover, room temperature electrical conductivity of the samples deposited at 48 kHz excitation frequency was higher than that of samples deposited at 120 kHz. Temperature dependent electrical conductivity data showed that variable range hopping mechanism can be used to explain the conduction of spray pyrolyzed CuInS₂ thin films. Electrical mobility as high as 48 cm²/Vs has been observed for the sample deposited from 0.51 ml/cm² loading at 48 kHz excitation frequency. This value is very close to the mobility of vacuum deposited thin films like amorphous silicon, which is one of the most commonly used semiconductor in electronic and energy applications.     

Effect of substrate rotation speed on structure and properties of Al-doped ZnO thin films prepared by rf-sputtering

Al-doped ZnO (AZO) thin films were deposited on glass substrates by rf-sputtering at room temperature. The effects of substrate rotation speed (ω_S) on the morphological, structural, optical and electrical properties were investigated. SEM transversal images show that the substrate rotation produces dense columnar structures which were found to be better defined under substrate rotation. AFM images show that the surface particles of the samples formed under substrate rotation are smaller and denser than those of a stationary one, leading to smaller grain sizes. XRD results show that all films have hexagonal wurtzite structure and preferred c-axis orientation with a tensile stress along the c-axis. The average optical transmittance was above 90% in UV-Vis region. The lowest resistivity value (8.5×10^?3 Ω·cm) was achieved at ω_S=0 r/min, with a carrier concentration of 1.8×10²⁰ cm^?3, and a Hall mobility of 4.19 cm²/(V·s). For all other samples, the substrate rotation induced changes in the carrier concentration and Hall mobility which resulted in the increasing of electrical resistivity. These results indicate that the morphology, structure, optical and electrical properties of the AZO thin films are strongly affected by the substrate rotation speed.     

Effects of sputtering pressure and post-metallization annealing on the physical properties of rf-sputtered Y2O3 films

Y₂O₃ thin films were prepared by rf-sputtering under various sputtering pressures at room temperature. Spectroscopic ellipsometer, X-ray diffraction and semiconductor parameter analyzer were used to characterize the studied films. The results show the crystallinity and leakage current density of the films improved with decreasing sputtering pressure. The effects of post-metallization annealing (PMA) on optical, structural and electrical properties of the films were also evaluated. It is found that PMA can significantly enhance the electrical performance of Y₂O₃ film, and the lowest leakage current is found to be 1.54 × 10⁻⁸ A/cm² at 1 MV/cm for the samples treated at 350 °C for 30 min. The leakage current mechanisms were discussed as well, which reveals that space charge limited current dominates the as-deposited films while Schottky mechanism describes the PMA treated ones well.     

Enhanced piezoelectric properties of Ta substituted-(K0.5Na0.5)NbO3 films: A candidate for lead-free piezoelectric thin films

Piezoelectric (K_0.5Na_0.5)NbO₃ (KNN) and (K_0.5Na_0.5)(Nb_0.7Ta_0.3)O₃ (KNNT) thin films were prepared via chemical solution deposition. An analysis of X-ray diffraction revealed that Ta⁵⁺ diffuses into the KNN to form a single perovskite structure. Compared to KNN films, KNNT films exhibited a low leakage current density due to their fine-grain nonporous structures. The partial substitution of Ta⁵⁺ for the B-site ion Nb⁵⁺ in the KNNT films decreased the Curie temperature (T_C). This in turn led to the existence of a polymorphic phase transition near room temperature and further improvement in the piezoelectric properties. Lead-free KNNT films exhibited a well-saturated piezoelectric hysteresis loop with a effective piezoelectric coefficient (d_33,eff) value of 61 pm/V, comparable to that of PZT thin films.     

Effect of annealing and O2 pressure on structural and optical properties of pulsed laser deposited TiO2 thin films

In this paper, effect of annealing and O₂ pressure on the structural and optical properties of pulsed laser deposited thin films of TiO₂ is reported. XRD, FTIR spectra and SEM images confirm that at high annealing temperatures, the rutile phase and crystalline quality of thin films increases. Higher pressure of O₂ during deposition improves the rutile phase and favors the rod like growth of TiO₂ thin film. The red shift in photoluminescence (PL) spectra of TiO₂ thin films with annealing temperature is reported. Contact angle measurement data for the thin films reveals the hydrophobic nature of the films. The very low reflectivity (～10%) reported in this paper may be promising for anti-reflection coating applications of pulsed laser deposited TiO₂ thin films.     

Chemically synthesized hydrous RuO2 thin films for supercapacitor application

The hydrous RuO₂ thin films have been successfully synthesized at low temperature on glass and stainless steel substrates using lucrative chemical bath deposition (CBD) method. Their structural, morphological, optical, electrical and wettability properties were studied by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared (FT-IR), UV-vis-NIR spectrophotometer, two point probe method and water contact angle measurement techniques. The results showed that, the CBD method allows to formation of amorphous, porous, superhydrophilic, semiconducting, hydrous RuO₂ thin films with optical band gap of 2.7 eV. The supercapacitive behavior of hydrous RuO₂ in 0.5 M H₂SO₄ electrolyte examined by cyclic voltammetric (CV) measurements showed maximum specific capacitance of 73 F g⁻¹.     

Fabrication and characterization of ITO thin films on heat-resistant transparent flexible clay films

Transparent conductive indium tin oxide (ITO) thin films were deposited on transparent flexible clay films with heat resistant and high gas barrier properties by rf magnetron sputtering. The electrical, structural, and optical properties of these films were examined as a function of deposition temperature. A lowest resistivity of 4.2 × 10^− 4 Ωcm and an average transmittance more than 90% in the visible region were obtained for the ITO thin films fabricated at deposition temperatures more than 300 °C. It was found that ITO thin films with low resistivity and high transparency can be achieved on transparent flexible clay film using conventional rf magnetron sputtering at high temperature, those characteristics are comparable to those of ITO thin films deposited on a glass substrate.     

Effects of Mg substitution on the structural, optical, and electrical properties of CuAlO2 thin films

Mg-doped CuAlO₂ thin films are prepared by the chemical solution method. The XRD results show that the solid solubility of Mg species on Al sites in CuAlO₂ lattice is lower than 2 at.%. When less than 2 at.% of Mg is added to the CuAlO₂ film, the surface roughness of the films was reduced with Mg substitution. Moreover, the c-axis orientation of the films improves because the in-plane fusion between CuAlO₂ crystallites is hindered. Optical and electrical measurements show that substituting Al³⁺ in the films with Mg²⁺ increases both their transmittance in the visible region and their optical band gaps. As well, their electrical conductivity is enhanced. At 300 K, the conductivity of the 1 at.% Mg-doped sample is up to 5.2 × 10⁻³ S/cm. Thus, Mg-doped CuAlO₂ films may have potential applications as transparent conductive oxides.     

Influence of EDTA concentration on the structure and properties of SnS films prepared by electro-deposition

Tin sulfide (SnS) thin films were deposited onto indium tin oxide (ITO) glass substrates by cathodic electro-deposition from aqueous solution containing ethylene diamine tetraacetate acid (EDTA). Because EDTA can slow the deposition rate of Sn through formation of Sn chelates, it is possible to obtain stoichiometric SnS films with good quality by adding EDTA to the deposition bath. The deposited films were characterized with X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy (Raman), and ultraviolet-visible-near infrared (UV-VIS-NIR) spectrophotometer. The as-deposited films are mainly polycrystalline SnS with orthorhombic crystalline structure, and they show good uniformity and surface coverage with root mean square (RMS) roughness of 45.36-62.39 nm and grain sizes of 100-300 nm. Raman microscopy shows that the films have bands at around 190 and 218 cm^− 1 belonging to A_g mode of SnS. The concentration ratio of EDTA and Sn²⁺ (EDTA/Sn²⁺) has some influence on the structure, phase, Raman shift and optical properties of the deposited films. When the EDTA/Sn²⁺ is less than 0.5, the films have a Raman shift at around 306 cm^− 1 due to Sn₂S₃. XPS analysis also shows that there exists a Sn₂S₃ phase in the deposited films. When the EDTA/Sn²⁺ equals 1/1, there is only the SnS phase in the deposited films. With an increase of the EDTA/Sn²⁺ from 0.1 to 1, the direct band gap of the films is decreased from 1.75 eV to 1.43 eV. Therefore EDTA/Sn²⁺ = 1/1 is good for depositing SnS films.     

Synthesis of nanostructured CuxS thin films by chemical route at room temperature and investigation of their size dependent physical properties

Nanostructured semiconductors show very interesting physical properties than bulk crystal due to size effects that arises because of quantum confinement of the electronic states. Using cupric acetate and sodium thiosulphate as cationic and anionic precursor, nanostructured Cu₂S thin films were successfully prepared at room temperature by chemical bath deposition technique. By varying the deposition time from 9 to 24 h, the Cu₂S films of thickness 70-233 nm were prepared. The different characterization methods such as X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption and electrical resistivity measurement techniques were used to investigate size dependent properties of Cu₂S thin films. As thickness increases, the hexagonal covellite phase of CuS observed at thickness 70 nm gets converted to monoclinic chalcosite phase of Cu₂S. The resistivity and activation energy is found to be thickness dependent. The optical band-gap energy increases from 2.48 to 2.90 eV as thickness decreases from 233 to 70 nm. The influence of film thickness on carrier concentration, mobility and thermo-emf is reported.