Degradation of all-inkjet-printed organic thin-film transistors with TIPS-pentacene under processes applied in textile manufacturing

Printed electronics represent an alternative solution for the manufacturing of low-temperature and large area flexible electronics. The use of inkjet printing is showing major advantages when compared to other established printing technologies such as gravure, screen or offset printing, allowing the reduction of manufacturing costs due to its efficient material usage and the direct-writing approach without requirement of any masks. However, several technological restrictions for printed electronics can hinder its application potential, e.g. the device stability under atmospheric or even more stringent conditions. Here, we study the influence of specific mechanical, chemical, and temperature treatments usually appearing in manufacturing processes for textiles on the electrical performance of all-inkjet-printed organic thin-film transistors (OTFTs). Therefore, OTFTs where manufactured with silver electrodes, a UV curable dielectric, and 6,13-bis(triisopropylsilylethynyl) pentance (TIPS-pentacene) as the active semiconductor layer. All the layers were deposited using inkjet printing. After electrical characterization of the printed OTFTs, a simple encapsulation method was applied followed by the degradation study allowing a comparison of the electrical performance of treated and not treated OTFTs. Industrial calendering, dyeing, washing and stentering were selected as typical textile processes and treatment methods for the printed OTFTs. It is shown that the all-inkjet-printed OTFTs fabricated in this work are functional after their submission to the textiles processes but with degradation in the electrical performance, exhibiting higher degradation in the OTFTs with shorter channel lengths (L = 10 μm).     

Soluble pentacene thin-film transistor using a high solvent and heat resistive polymeric dielectric with low-temperature processability and its long-term stability

Solution processable organic thin-film transistors (OTFTs) were fabricated using 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) and low-temperature processable polyimide gate dielectric. The TIPS-pentacene OTFT with the dielectric was found to have a field-effect mobility of 0.15 cm²/Vs, which is comparable to that of OTFT with an inorganic dielectric. The OTFTs with the polyimide dielectric did not show any significant performance degradation as time passed. A field-effect mobility of the OTFTs in 60 days was found to be almost identical to that of pristine OTFT. The combination of TIPS-pentacene and our polyimide gate dielectric can be one of the potential candidates for the fabrication of stable OTFTs for large-area flexible electronics.     

Printed Transistors on Paper: Towards Smart Consumer Product Packaging

The integration of fully printed transistors on low cost paper substrates compatible with roll‐to‐roll processes is demonstrated here. Printed electronics promises to enable a range of technologies on paper including printed sensors, RF tags, and displays. However, progress has been slow due to the paper roughness and ink absorption. This is solved here by employing gravure printing to print local smoothing pads that also act as an absorption barrier. This innovative local smoothing process retains desirable paper properties such as foldability, breathability, and biodegradability outside of electronically active areas. Atomic force microscopy measurements show significant improvements in roughness. The polymer ink and printing parameters are optimized to minimize ink absorption and printing artifacts when printing the smoothing layer. Organic thin film transistors (OTFT) are fabricated on top of this locally smoothed paper. OTFTs exhibit performance on par with previously reported printed transistors on plastic utilizing the same materials system (pBTTT semiconductor, poly‐4‐vinylphenol dielectric). OTFTs deliver saturation mobility approaching 0.1 cm²V^–1s^–1 and on‐off‐ratio of 3.2 × 10⁴. This attests to the quality of the local smoothing, and points to a promising path for realizing electronics on paper.     

Low-voltage operation of organic thin-film transistors based on ultrafine printed silver electrodes

We report the low-voltage operation of organic thin-film transistors (OTFTs) based on high-resolution printed source/drain electrodes that are produced by a surface photoreactive nanometal printing (SuPR-NaP) technique. We utilized an ultrathin layer of perfluoropolymer, Cytop, that functions not only as a gate dielectric layer in the OTFTs but also as a base layer for producing a patterned reactive surface for silver nanoparticle chemisorption in the SuPR-NaP technique. We successfully demonstrate 2 V operation with negligible hysteresis in the polycrystalline pentacene OTFT with a gate dielectric thickness of 22 nm, and we achieved current amplification by the printed electrodes modified with pentafluorobenzenethiol. The SuPR-NaP technique enables the production of high-resolution printed silver electrodes required for high-performance OTFTs, which have potential practical electronic device applications.     

Direct writing of inkjet-printed short channel organic thin film transistors

A direct-writing fabrication process for fully inkjet-printed short-channel organic thin-film transistors (OTFTs) has been developed. Channels as narrow as 800 nm between two printed Ag electrodes were achieved by printing a special Ag ink on an SU-8 interlayer, which can be partially dissolved by the solvents used in the Ag ink. The ridge formed along the printed Ag line edges due to redistribution of the interlayer material during the drying process limits the ink spread, and separates neighboring printed lines, and is the key to defining an ultra-narrow channel for transistor fabrication. The short-channel OTFTs fabricated using this technique have demonstrated well-defined linear and saturation regimes. An extracted mobility of 0.27 cm²/Vs with an on/off ratio of 10⁵ was obtained at a driving voltage of −12 V. The excellent performance of these devices demonstrates the potential of this technique in fabrication of short-channel devices using standard printing technologies.     

Effects of the Ag content on the geometrical and electrical characteristics of the screen-printed etched gate electrodes of OTFTs using Ag ink

During the fabrication of gate electrodes by Ag ink screen-printing combined with a wet-etching process, the effects of the Ag content on the geometrical and electrical characteristics such as the thickness and surface roughness of gate electrode, step coverage with the gate dielectric, leakage current associated with the step coverage, and the electrical performance of organic thin film transistors (OTFTs) were investigated. An increase of Ag content resulted in the thick and densely-packed Ag electrode, which had a stable and excellent conductivity. But, the large thickness of Ag electrode caused the worse step coverage of PVP (polyvinylphenol) dielectric layer on the edge of the Ag gate electrode, therefore, for Ag contents more than 40 wt.%, MIM (metal-insulator-metal) devices and OTFTs with the Ag gate electrodes had very large leakage current (>10⁻⁴ A/cm²) and off-state current (>∼19 pA/μm) due to the poor step coverage of PVP dielectric layers, respectively. Finally, we found that an Ag content of 20-30 wt.% was suitable for the screen-printed etched gate electrode of OTFTs using Ag ink. This range generated a mobility of 0.18 cm²/V s, an on/off current of 5 × 10⁶, and an off-state current of 0.002 pA/μm, which are suitable to drive e-paper.     

Fully solution-processed organic thin-film transistors by consecutive roll-to-roll gravure printing

A high-performance/flexible organic thin-film transistor (OTFT) is fabricated by using all-step solution processes, which are composed of roll-to-roll gravure, plate-to-roll gravure and inkjet printing with the least process number of 5. Roll-to-roll gravure printing is used to pattern source/drain electrodes on plastic substrate while semiconductor and dielectric layers are printed by consecutive plate-to-roll gravure printing. Finally, inkjet printing of Ag organometallic ink is used to pattern the gate electrode. The fabricated OTFT exhibits excellent electrical performance, field-effect mobility over 0.2 cm²/Vs, which is one of the best compared to the previous works. The deposition of a self-assembled monolayer on the source-drain electrodes results in a higher work function which is suitable for a p-type polymer semiconductor. Moreover, the formation of dense gate electrode line on hydrophobic dielectric is achieved by selecting suitable Ag ink.     

A printing technology combining screen-printing with a wet-etching process for the gate electrodes of organic thin film transistors on a plastic substrate

We have developed a practical printing technology for the gate electrode of organic thin film transistors (OTFTs) by combining screen-printing with a wet-etching process using nano-silver (Ag) ink as a conducting material. An Ag film was deposited onto a PVP (polyvinylphenol)-coated PC (polycarbonate) plastic substrate by screen-printing with nano-Ag ink, where Ag content of 20 wt.% was mixed using a terpineol solvent. Subsequently, the film was cured at 200 °C for 60 min, and then finally wet-etched through patterned positive photo-resist masks. The screen-printed Ag electrode exhibited a minimum line width of ∼5 μm, a thickness of ∼65 nm, and a resistivity of ∼10⁻⁶ Ω cm, producing good geometrical and electrical characteristics for a gate electrode. Additionally, it also provided good step coverage with the PVP dielectric layer, and consequently leakage current between the gate and source/drain electrodes was eliminated. Moreover, the electrical characteristic of the screen-printed Ag electrode was not significantly changed even after a bending test in which the Ag electrodes were bent with a bending radius of 6 mm and 2500 iterations of cyclic bending. OTFTs with the screen-printed Ag electrode produced a saturation mobility of 0.13 cm²/Vs and a current on/off ratio of 1.79 × 10⁶, being comparable to those of an OTFT with a thermally evaporated Al gate electrode.     

Pentacene organic thin-film transistors with solution-based gelatin dielectric

Gelatin is a natural protein in the field of food, pharmaceutical and tissue engineering, which works very well as the gate dielectric for pentacene organic thin-film transistors (OTFTs). An aqueous solution process has been applied to form a gelatin thin film on poly(ethylene terephthalate) (PET) or glass by spin-coating and subsequent casting. The device performance of pentacene OTFTs depend on the bloom number (molecular weight) of gelatin. The pentacene OTFT with 300 bloom gelatin as the gate dielectric in air ambient exhibits the best performance with an average field-effect mobility (μ_FE) value of ca. 16 cm² V^?1 s^?1 in the saturation regime and a low threshold voltage of ?1 V. The high performance of the pentacene OTFT in air ambient is attributed to the water resided in gelatin. The crystal quality of pentacene is not the key factor for the high performance.     

High performance tetrathienoacene-DDP based polymer thin-film transistors using a photo-patternable epoxy gate insulating layer

High performance organic thin-film transistors (OTFTs) are fabricated on an epoxy based photo-patternable organic gate insulating layer (p-OGI) using a top contact thin-film transistor configuration. This negative tone p-OGI material is composed of an epoxy type polymer resin, a polymeric epoxy cross-linker, and a sulfonium photoacid generator (PAG). Features from p-OGI can be precisely patterned down to ∼3 μm via i-line photolithography. In order to evaluate the potential of this epoxy type resin as a gate insulator, we evaluated the dielectric properties of the p-OGI and its gate insulating performance upon fabricating solution processed OTFTs using an organic semiconductor (OSC), namely tetrathienoacene-DPP copolymer (PTDPPTFT4). Results show that the PTDPPTFT4 based OTFTs with this p-OGI exhibit field-effect mobilities up to 1 cm² V⁻¹ s⁻¹, indicating the potential of high performance solution processed OTFT based on an epoxy based p-OGI/OSC system.     

Triacetate cellulose gate dielectric organic thin-film transistors

Here, we report on the performance and the characterization of all solution-processable top-contact organic thin-film transistors (OTFTs) consisting of a natural-resourced triacetate cellulose gate dielectric and a representative hole-transport poly[2,5-bis(3-dodecylthiophen-2-yl)thieno[3,2-b]thiophene] (pBTTT) semiconductor layer on rigid or flexible substrates. The bio-based triacetate cellulose layer has an important role in the OTFT fabrication because it provides the pBTTT semiconducting polymer with highly suitable gate dielectric properties including a low surface roughness, hydrophobic surface, appropriate dielectric constant, and low leakage current. The triacetate cellulose gate dielectric-based pBTTT OTFTs exhibit an average filed-effect mobility of 0.031 cm²/Vs similar to that obtained from a SiO₂ gate dielectric-based OTFT device in ambient conditions. Even after a bending stimulation of 100 times and in an outward bending state, the flexible triacetate cellulose gate pBTTT OTFT device still showed excellent electrical device performance without any hysteresis.     

Photo-patternable polyimide gate insulator with fluorine groups for improving performance of 2,7-didecyl[1]benzothieno[3,2-b][1]benzothiopene (C10-BTBT) thin-film transistors

Surface properties of gate insulators strongly affect the device performance of organic thin-film transistors (OTFTs). To improve the performance of OTFTs, we have developed photo-sensitive polyimide gate insulator with fluorine groups. The polyimide gate insulator film could be easily patterned by selective UV exposure without any photoinitiator. The polyimide gate insulator film, fabricated at 130 °C, has a dielectric constant of 2.8 at 10 kHz, and leakage current density of <1.6 × 10^?10 A/cm² while biased from 0 to 90 V. To investigate the potential of the polyimide with fluorine groups as a gate insulator, we fabricated C₁₀-BTBT TFTs. The field-effect mobility and the on/off current ratio of the TFTs were measured to be 0.76 ± 0.09 cm²/V s and >10⁶, respectively.     

Polymer Inverter Fabricated by Inkjet Printing and Realized by Transistors Arrays on Flexible Substrates

We have fabricated organic thin-film transistors (OTFTs) and implemented inverters on flexible substrates using polythiophene (PHT) as the semiconductor and polyvinylphenol (PVP) as the gate dielectric. The semiconductor was defined by inkjet printing. The poor consistency of the printing process has affected the uniformity of inkjet-printed OTFTs enormously. We also proposed a method to increase the yield by incorporating a pre-testing step during circuit fabrication. We designed and fabricated a basic unit of circuits called a thin-film transistor (TFT) array. These devices were then connected to each other to form a gate via printed nano-silver. To verify the implementation flow, we designed and measured bootstrap inverters and ring oscillator composed of them. The five-stage ring oscillator has been fabricated and oscillated at the frequency, 60 Hz, when the supply voltage is 40 V      

Thermally curable polymers consisting of alcohol-functionalized cyclotetrasiloxane and melamine derivatives for use as insulators in OTFTs

New thermally curable organic/inorganic hybrid polymers were designed and synthesized as insulators for organic thin film transistors (OTFTs). Cyclotetrasiloxane (CTS) was reacted with allyl alcohols through a hydrosilylation reaction in the presence of a catalytic amount of Pt(0) to give the alcohol-functionalized cyclotetrasiloxane (CTS-OH). The synthesized CTS-OH was then thermally cured with hexamethoxymethylmelamine (HMMM) at 80 °C in the presence of a catalytic amount of p-toluenesulfonic acid to form a hard and smooth thin film composed of a highly cross-linked network polymers (CTS-MMs). Devices with indium-tin-oxide/CTS-MM/Au configuration were fabricated to investigate electrical properties of the polymers such as capacitance, dielectric constant, and leakage current. The CTS-MM showed lower leakage current level than the well-known curable insulator consisting of poly(vinylphenol) (PVP) and a melamine derivative. Pentacene-based OTFTs were fabricated using the synthesized insulators as the gate dielectric layers, and their performances were compared to those of the device fabricated using PVP. The OTFTs fabricated using CTS-MM showed higher field-effect mobility than that of the PVP. The hole mobility of the pentacene based-OTFTs fabricated using CTS-MM as gate dielectric was 0.36 cm²/V s and the on/off current ratio was >10⁷.     

UV-directly patternable organic–inorganic hybrid composite dielectrics for organic thin-film transistors

A research on the design, synthesis, and characterization of novel cross-linked polymer organic–inorganic hybrid materials as gate insulators for organic thin-film transistors (OTFTs) with vanadyl-phthalocyanine as the organic semiconductor is presented. The hybrid films (0.5–1.2 μm thick) can be easily prepared by sol–gel technology and fabricated by spin-coating a mixture of zirconium n-butoxide sol with a side-chain triethoxysilane-capped polyurethane solution in ambient conditions, followed by curing at low temperatures (∼120 °C) and cross-linking under UV light. OTFTs with this film as gate insulator were achieved with good processability, high charge-carrier mobility of 0.56 cm²/Vs, surface roughness of around 0.49–0.59 nm, ultralow threshold of −6 V, and ultralow leakage of 0.24 mA. Hybrid films with various compositions were investigated, and the results showed that the field-effect mobility of the OTFTs was dominated by the high dielectric constant component ZrO₂. The result indicated that these hybrid materials are promising candidates for the exploration of devices using OTFTs.     

Small-molecule vacuum processed melamine-C60, organic field-effect transistors

The transfer of benchtop knowledge into large scale industrial production processes represents a challenge in the field of organic electronics. Large scale industrial production of organic electronics is envisioned as roll to roll (R2R) processing which nowadays comprises usually solution-based large area printing steps. The search for a fast and reliable fabrication process able to accommodate the deposition of both insulator and semiconductor layers in a single step is still under way. Here we report on the fabrication of organic field effect transistors comprising only evaporable small molecules. Moreover, both the gate dielectric (melamine) and the semiconductor (C₆₀) are deposited in successive steps without breaking the vacuum in the evaporation chamber. The material characteristics of evaporated melamine thin films as well as their dielectric properties are investigated, suggesting the applicability of vacuum processed melamine for gate dielectric layer in OFETs. The transistor fabrication and its transfer and output characteristics are presented along with observations that lead to the fabrication of stable and virtually hysteresis-free transistors. The extremely low price of precursor materials and the ease of fabrication recommend the evaporation processes as alternative methods for a large scale, R2R production of organic field effect transistors.     

Polyelectrolyte Dielectrics for Flexible Low‐Voltage Organic Thin‐Film Transistors in Highly Sensitive Pressure Sensing

Organic thin‐film transistors (OTFTs) can provide an effective platform to develop flexible pressure sensors in wearable electronics due to their good signal amplification function. However, it is particularly difficult to realize OTFT‐based pressure sensors with both low‐voltage operation and high sensitivity. Here, controllable polyelectrolyte composites based on poly(ethylene glycol) (PEG) and polyacrylic acid (PAA) are developed as a type of high‐capacitance dielectrics for flexible OTFTs and ultrasensitive pressure sensors with sub‐1 V operation. Flexible OTFTs using the PAA:PEG dielectrics show good universality and greatly enhanced electrical performance under a much smaller operating voltage of ?0.7 V than those with a pristine PAA dielectric. The low‐voltage OTFTs also exhibit excellent flexibility and bending stability under various bending radii and long cycles. Flexible OTFT‐based pressure sensors with low‐voltage operation and superhigh sensitivity are demonstrated by using a suspended semiconductor/dielectric/gate structure in combination with the PAA:PEG dielectric. The sensors deliver a record high sensitivity of 452.7 kPa^?1 under a low‐voltage of ?0.7 V, and excellent operating stability over 5000 cycles. The OTFT sensors can be built into a wearable sensor array for spatial pressure mapping, which shows a bright potential in flexible electronics such as wearable devices and smart skins.     

Crystallization of sexiphenyl induced by polyurethane containing terphenyl groups affording high-mobility organic thin-film transistor

Novel polyurethane containing terphenyl groups were designed and synthesized as gate insulators to induce the crystallization of p-sexiphenyl(p-6P) for organic thin-film transistors (OTFTs). Different sizes and shapes of p-6P grains were measured by atomic force microscopy (AFM), and results showed that the large size of p-6P grain can improve the performance of OTFTs. About 900 nm thick films can be easily fabricated by spin-coating under ambient conditions, followed by curing at UV irradiation for 10 min. OTFTs with this film as gate insulator were found to have good processability, a high charge-carrier mobility of 1.1 cm²/V s, a threshold voltage of −25 V, and an on/off current ratio >10⁵. The result indicated that this material is a promising candidate for the exploration of devices using OTFTs.     

Effect of the work function of gate electrode on hysteresis characteristics of organic thin-film transistors with Ta2O5/polymer as gate insulator

Organic thin-film transistors (OTFTs) using high dielectric constant material tantalum pentoxide (Ta₂O₅) and benzocyclobutenone (BCBO) derivatives as double-layer insulator were fabricated. Three metals with different work function, including Al (4.3 eV), Cr (4.5 eV) and Au (5.1 eV), were employed as gate electrodes to study the correlation between work function of gate metals and hysteresis characteristics of OTFTs. The devices with low work function metal Al or Cr as gate electrode exhibited high hysteresis (about 2.5 V threshold voltage shift). However, low hysteresis (about 0.7 V threshold voltage shift) OTFTs were attained based on high work function metal Au as gate electrode. The hysteresis characteristics were studied by the repetitive gate voltage sweep of OTFTs, and capacitance–voltage (C–V) and trap loss-voltage (G_p/ω?V) measurements of metal–insulator–semiconductor (MIS) devices. It is proved that the hysteresis characteristics of OTFTs are relative to the electron injection from gate metal to Ta₂O₅ insulator. The electron barrier height between gate metal and Ta₂O₅ is enhanced by using Au as gate electrode, and then the electron injection from gate metal to Ta₂O₅ is reduced. Finally, low hysteresis OTFTs were fabricated using Au as gate electrode.     

All-inkjet-printed low-pass filters with adjustable cutoff frequency consisting of resistors,inductors and transistors for sensor applications

Low-cost and flexible first and second order low-pass filters with adjustable cutoff frequency were designed and printed by inkjet printing technology. The all-inkjet-printed low-pass filters were characterized and an adjustable cutoff frequency feature in form of an inkjet-printed organic thin-film transistors (OTFTs) was added to the filters for application-oriented fine-tuning. The applicability of these small circuits was evaluated by signal filtering for sensor applications. As a result, low-pass filters with an adjustable cutoff frequency ranging from 82 Hz to 740 Hz were obtained, demonstrating their suitability in signal filtering and their promising applicability for tactile sensing characterized by low frequency signals.