一种测试半导体制冷器的瞬态方法

ZT值、最大制冷温差和响应时间是表征半导体制冷器性能的重要参数.文中介绍了一种能同时测量这三个参数的瞬态方法,并讨论了热沉对测试结果的影响.利用一个由恒流脉冲发生器和数据采集卡组成的简单测试系统测得制冷器在小电流下的电阻电压和塞贝克电压,通过这两个电压推导出ZT值、最大制冷温差.这种瞬态方法是非接触式测量,准确度高,可用于薄膜热电器件测试;另外瞬态方法耗时短,可大大缩短半导体制冷器可靠性测试的周期.采用这种方法对4mm×4mm×2.4mm的热电制冷器进行实验,环境温度300K时,测得ZT值为0.39,最大温差58.5K,响应时间20s.     

一种测试半导体制冷器的瞬态方法

ZT值、最大制冷温差和响应时间是表征半导体制冷器性能的重要参数.文中介绍了一种能同时测量这三个参数的瞬态方法,并讨论了热沉对测试结果的影响.利用一个由恒流脉冲发生器和数据采集卡组成的简单测试系统测得制冷器在小电流下的电阻电压和塞贝克电压,通过这两个电压推导出ZT值、最大制冷温差.这种瞬态方法是非接触式测量,准确度高,可用于薄膜热电器件测试;另外瞬态方法耗时短,可大大缩短半导体制冷器可靠性测试的周期.采用这种方法对4mm×4mm×2.4mm的热电制冷器进行实验,环境温度300K时,测得ZT值为0.39,最大温差58.5K,响应时间20s.     

Enhancing Performance of Thermoelectric Coolers Through the Application of Distributed Control

The primary drawback of thermoelectric coolers (TECs) for electronics cooling applications is their thermodynamic inefficiency due to material limitations. The present work considers a control strategy to improve the overall coefficient of performance in an engineering system instead of addressing material shortcomings. Typical TECs are composed of several individual thermocouples that are powered in series and remove heat in parallel. If one of the numerous thermocouples is powered, all the thermocouples receive the some power whether or not they are needed. The fact that chips heat nonuniformly provides an opportunity for performance enhancement, by sensing and controlling the power to individual couples within the device. The current work presents evidence that applying distributed control to TEC operation can realize appreciable improvement in performance. Compared to monolithic cooling devices, a distributed control strategy can realize a factor of 2 increase in performance for the device studied. Additionally, this type of control can be used in conjunction with many of the existing material-based research initiatives to further compound the benefits.     

Self-Assembly for Integration of Microscale Thermoelectric Coolers

Optimum thermoelectric cooling (TEC) solutions often require the integration of component sizes inaccessible by common manufacturing techniques such as thin-film processing and robotic assembly. This work considers an application case in which small elements (100 μm to 300 μm thick) are optimal. A capillary self-assembly process is presented as a potential route to manufacturing TECs in these size ranges. A millimeter-scale demonstration of the assembly concept is presented and Monte Carlo simulation is used to study the scaling of the self-assembly approach to assemblies with more components. While assembly rate and system yield can be a challenge, several approaches are presented for increasing both rate and yield.     

Thermoelectric Performance for SnSe Hot-Pressed at Different Temperature

Herein, nanoparticles SnSe are prepared by fusion method together with ball-milling technique and the effect of hot-pressing temperatures on the thermoelectric properties of the dense materials is explored. Due to the optimization of carrier concentration, the peak figure of merit (ZT) value of the compacted material reaches 0.73 for SnSe sample hot-pressed at 400°C and 450°C. The present investigation indicates that the thermoelectric performance of the SnSe compound can be significantly improved by sintering with suitable temperature.     

陶瓷电路基板的新型金属化技术

研制成功一种新型的陶瓷电路基板的金属化技术，它兼容了薄膜和厚膜技术的优点，采用ＳＥＭ研究了陶瓷基体的浸蚀特性。测量了金属化导体的附着强度、可焊性、薄层电阻、导热能力及微波损耗，并进行了温循和老化等可靠性试验。测试及应用结果表明，采用该技术可在氧化铝瓷基板上制作附着牢固的铜金属化电路图形，其机、电、热性能优良，可靠性好，为微波和混合集成电路衬底金属化技术开辟了新的工艺途径。     

基于不同衬底的二氧化硅可调复用器/解复用器的单片集成芯片研究

分别设计制备了基于石英衬底和硅衬底的16通道200 GHz二氧化硅可调复用器/解复用器.该器件由一个16通道200 GHz的阵列波导光栅(AWG)和Mach-Zehnder干涉型热光可调光衰减器(VOA)阵列构成.在衰减量达到20 dB的时候,基于石英衬底的器件的外加偏压和功耗分别是11.7V和110 mW;而基于硅衬底的器件的外加偏压和功耗分别是22V和380mW.分析了基于不同衬底的器件性能出现差别的原因,并设计了新的结构,提高了器件性能.     

Multiphysics Simulation of Thermoelectric Systems for Comparison with Experimental Device Performance

The efficiency of thermoelectric devices is determined not only by the quality of the thermoelectric material but also by the geometrical design of the legs and the properties and design of the contacts with the corresponding soldering process. These influences on the performance of a thermoelectric generator are studied by multiphysics finite element modeling. The simulated data are compared with experimental results for modules manufactured from Bi₂Te₃ compounds with ZT values >0.8. A decrease of the ZT value for the module by a factor of about four can be traced back to the high contact resistance. The thermal losses at the contact interfaces are negligible for these devices.     

基于不同移动节点数目的Ad Hoc路由协议性能比较

文章主要介绍了基于仿真软件NS的Ad Hoc网络路由协议的仿真和比较.首先对现有Ad Hoc网络的相关路由协议进行分类说明,并主要对DSDV和AODV路协议进行介绍和分析;接着对仿真工具NS进行了介绍;最后设计了两个不同移动节点数目的运动场景对两种Ad Hoc路由协议进行仿真和比较.通过对仿真过程中产生的数据包延迟和丢包率进行分析,给出了结论.     

一种压电半导体纳米线的热电耦合性能研究

采用有限元分析方法,研究了一种n型压电半导体纳米线(氧化锌)的电热耦合性能,分析了外部温度对氧化锌纳米线内部机械场、电场及电流场分布的影响,并讨论了本构方程线性化对电学参数的影响。研究结果表明,温度对氧化锌纳米线的电场、载流子浓度和电流密度影响很大,采用线性本构和非线性本构求得的电场、电子浓度和电流密度最大相差分别为24%,32%和68%,基于非线性本构分析压电半导体的电学性能会引起很大误差。该研究结果可为压电半导体器件利用温度调控电场、电流提供理论依据。     

Micro Solid Oxide Fuel Cells on Glass Ceramic Substrates

Miniaturized solid oxide fuel cells are fabricated on a photostructurable glass ceramic substrate (Foturan) by thin film and micromachining techniques. The anode is a sputtered platinum film and the cathode is made of a spray pyrolysis (SP)‐deposited lanthanum strontium cobalt iron oxide (LSCF), a sputtered platinum film and platinum paste. A single‐layer of yttria‐stabilized zirconia (YSZ) made by pulsed laser deposition (PLD) and a bilayer of PLD–YSZ and SP–YSZ are used as electrolytes. The total thickness of all layers is less than 1 µm and the cell is a free‐standing membrane with a diameter up to 200 µm. The electrolyte resistance and the sum of polarization resistances of the anode and cathode are measured between 400 and 600 °C by impedance spectroscopy and direct current (DC) techniques. The contribution of the electrolyte resistance to the total cell resistance is negligible for all cells. The area‐specific polarization resistance of the electrodes decreases for different cathode materials in the order of Pt paste > sputtered Pt > LSCF. The open circuit voltages (OCVs) of the single‐layer electrolyte cells ranges from 0.91 to 0.56 V at 550 °C. No electronic leakage in the PLD–YSZ electrolyte is found by in‐plane and cross‐plane electrical conductivity measurements and the low OCV is attributed to gas leakage through pinholes in the columnar microstructure of the electrolyte. By using a bilayer electrolyte of PLD–YSZ and SP–YSZ, an OCV of 1.06 V is obtained and the maximum power density reaches 152 mW cm⁻² at 550 °C.     

The Effects of Thermoelectric Film Thickness on Performance of In-Plane Thermoelectric Modules

We fabricated in-plane thermoelectric modules (4?mm?×?4?mm) on a 4-??m-thick substrate using a vacuum deposition process through a shadow mask. In this study, a thermoelectric p?Cn pair was established using multilayered films of p and n thermoelectric thin films and an insulator film with a hole at the center. The output power was 58?nW at 443?K using the multilayered microgenerator. We discuss the effects of device thickness on the efficiency of the microgenerator to increase the output electric power. We evaluated the output power of the in-plane thermoelectric generator with a substrate using a one-dimensional heat conduction model, and it was found to depend on the thickness of the thermoelectric film. If the thermoelectric film is very thin, the power factor is more important than the nondimensional figure of merit, ZT. Metal thin films with high power factor are more efficient than semiconductors with low power factors even though their thermal conductivities are high. When the thermoelectric thin film is thick, ZT should be higher for larger output power of the device.     

一种多级混沌调制保密通信系统

针对单级混沌通信系统安全度不高的局限性的情况,提出一种用环形蔡氏电路实现多级混沌调制的保密通信系统方案．该方案的主要特点是首先,采用多级混沌调制,提高了整个系统的安全性能;其次,环形蔡氏电路具有两个独立可调的分岔参数电阻,起到了密钥参数的作用,进一步增加了对信号破译的难度．     

Design of a Miniaturized Thermoelectric Generator Using Micromachined Silicon Substrates

This paper presents the design of a compact (~1 cm³) thermoelectric (TE) generator intended to generate power locally for sensor/electronic device applications using hot gases (~100°C to 400°C). The design employs 13-mm-diameter, ~0.36-mm-thick (48 mm³) silicon-micromachined TE modules that are stacked to form a cylindrical, finned heat exchanger. The stacked structure is intended to establish a large, uniform temperature gradient across radially oriented thermopiles in each module. Analytical heat transfer and electrical circuit models are used to design and optimize the thermopile for maximum output power under microfabrication and system-level constraints. Optimized structures using PbTe and Bi₂Te₃ thin films are predicted to achieve output power levels of 1.3 mW per module (26.7 mW/cm³) and 0.83 mW per module (17.4 mW/cm³), respectively, for hot gas at 400°C.     

Thermal Effect of Ceramic Substrate on Heat Distribution in Thermoelectric Generators

In thermoelectric generators (TEG), poor system design and load matching, which make the system less efficient, have been limiting factors in achieving high conversion efficiency. In this work, to consider the effect of the inlet plenum arrangement and the laminar coolant flow temperature variation in the heat sink, a parallel microchannel heat sink is applied to a real TEG. The focus of this study is a discussion of the temperature difference variation between the cold/hot sides of the TEG legs versus the variation of the thermal conductivity of the ceramic substrate and the thickness of the substrate on the hot side. While the imposed heat flux on the TEG is homogeneously constant, different pressure drops are applied along the microchannel heat sink. The three-dimensional governing equations for the fluid flow and heat transfer are solved using the finite-volume method. The results show that the temperature difference is affected remarkably by the pressure drops in the heat sink, the thermal conductivity of the ceramic substrate, and the thickness of the substrate on the hot side.     

Pb-Free Glass Paste: A Metallization-Free Die-Attachment Solution for High-Temperature Application on Ceramic Substrates

A lead-free glass frit paste as a die-attach material for high-temperature microelectronic application is proposed in this study. The glass paste containing Bi-based powder with a moderate amount of solvent was used for joining Si dice on ceramic substrates without any metallization preparation for either of the bonding surfaces. The die was bonded to a ceramic substrate at 430°C for 10 min. The study focuses on the mechanical and microstructural characterization of the joints with Si dice on two different types of ceramic substrate. Shear strength measurements were carried out at both ambient and 250°C to evaluate room- and high-temperature performance. Furthermore, the effect of aging at 300°C for 500 h on the mechanical properties is presented. The results of the mechanical and microstructural characterization demonstrate that low-temperature glass frit bonding is an effective die-attach method for harsh-environment electronic packaging.     

静态存储单元电路设计工艺的研究

论述了静态存储单元电路对目前高速数字系统的意义。通过采用对双极型(Bipolar)、互补对称式金属–氧化物–半导体型(CMOS)、双极互补金属氧化物半导体型(BiCMOS)三种不同工艺所设计的静态存储单元电路在性能、特点方面进行比较的方法,从而提出一些实际的解决措施,以便研发人员在设计具体的SRAM电路时有所参考。     

不同结构的反射式GaAs光电阴极的光谱特性比较

利用分子束外延生长了三种结构的反射式GaAs光电阴极,其中一种为传统结构的反射式GaAs光电阴极,另外两种为具有GaAlAs缓冲层的均匀掺杂和梯度掺杂反射式GaAs光电阴极.激活后的光谱响应测试结果表明,与传统结构的反射式GaAs光电阴极相比,具有GaAlAs缓冲层的均匀掺杂反射式GaAs光电阴极的长波响应更好,而具有GaAlAs缓冲层的梯度掺杂反射式GaAs光电阴极相比其它结构的反射式GaAs光电阴极能够获得更好的光电发射性能,光谱响应曲线更平坦,拟合光谱响应曲线结果表明其电子扩散长度和电子表面逸出几率都得到了增加,从而具有更高的积分灵敏度和长波响应.     

Thermoelectric Performance and High-Temperature Creep Behavior of GeTe-Based Thermoelectric Materials

New, efficient thermoelectric materials (GeTe) _x (Mn_0.6Sn_0.4Te)_1−x (0.8 ≤ x ≤  1.0) were prepared by hot pressing, and the effect of MnTe and SnTe contents on thermoelectric and mechanical properties of GeTe was investigated. The maximum dimensionless figure of merit ZT of the prepared materials is 1.57 in the temperature range from 720 K to 770 K for x = 0.15. Niobium was added to the quasiternary GeTe-based materials to suppress creep without degradation of thermoelectric properties. The distortion of the material with added Nb was less than 0.4% under experimental conditions of 100 N load at 873 K for 100 h. The favorable thermoelectric properties of these materials are accompanied by their stability in long-term use and the possibility of widening the service temperature range as a result of decreasing their phase-transition temperature T _c.