实用化宽带半导体激光器组件的研制及其特性的研究

使用ＤＣ－ＰＢＨ型激光二极管芯片，设计制作了实用化封装形式的宽带半导体激光器组件，在理论上和实验上研究了组件的封装模型、小信号频率调制特性和非线性失真，其光响应为３ｄＢ，带宽大于２ＧＨｚ．该器件可满足六次群光通信系统的带宽要求，也可用于ＧＨｚ级微波副载波光通信系统．     

1.3μm InGaAsP/InP大功率短脉冲SPB-BC激光器

本文在传统的掩埋新月型激光器的基础上，提出了一种１．３μｍＩｎＧａＡｓＰ／ＩｎＰ大功率激光器结构－选择性质子轰击掩埋新月型激光器（ＳＰＢ－ＢＣ）．文中对其制作过程及特性进行了详细的描述和测量．它的最低阈值电流小于１０ｍＡ，对于ｎ－ＩｎＰ衬底，它的最大输出功率为６５ｍＷ，ｐ－ＩｎＰ衬底，最大输出功率为８０ｍＷ．在重复频率为２．１ＧＨｚ时，测得光脉冲的半宽度（ＦＷＨＭ）为１８ｐｓ．     

1.3μm InGaAsP/InP大功率短脉冲SPB-BC激光器

本文在传统的掩埋新月型激光器的基础上，提出了一种１．３μｍＩｎＧａＡｓＰ／ＩｎＰ大功率激光器结构－选择性质子轰击掩埋新月型激光器（ＳＰＢ－ＢＣ）．文中对其制作过程及特性进行了详细的描述和测量．它的最低阈值电流小于１０ｍＡ，对于ｎ－ＩｎＰ衬底，它的最大输出功率为６５ｍＷ，ｐ－ＩｎＰ衬底，最大输出功率为８０ｍＷ．在重复频率为２．１ＧＨｚ时，测得光脉冲的半宽度（ＦＷＨＭ）为１８ｐｓ．     

质子注入平面掩埋条形高频DFB激光器

报道了采用质子注入制作平面掩埋条形高频ＤＦＢ激光器。质子注入提高了限制层对电流的限制作用,并减小了限制层的寄生电容;ＤＦＢ激光器的斜率效率由注入前的０．１４７ｍＷ／ｍＡ提高到０．２１６ｍＷ／ｍＡ;电容测试结果表明：质子注入使ｐｎｐｎ结构的势垒电容明显减小,激光器的寄生电容由注入前的约１００ｐＦ降至注入后的６ｐＦ;激光器的３ｄＢ调制宽带由注入前的５００ＭＨｚ提高到５．６６ＧＨｚ。高温老化筛选结果表明     

半绝缘InP的优化生长条件以及掩埋的1.55μm激光器

研究了低压ＭＯＣＶＤ下生长压力和Ｆｅ源／Ｉｎ源摩尔流量比对半绝缘ＩｎＰ电阻率的影响．得到了用ＬＰ－ＭＯＣＶＤ生长掺Ｆｅ半绝缘ＩｎＰ的优化生长条件．在优化生长条件下得到的Ｆｅ－ＩｎＰ的电阻率为２．０×１０８Ω·ｃｍ,击穿电场４×１０４Ｖ／ｃｍ．用半绝缘Ｆｅ－ＩｎＰ掩埋１．５５μｍ多量子阱激光器,激光器的高频调制特性明显优于反向ｐｎ结掩埋的激光器,３ｄＢ调制带宽达４．８ＧＨｚ．     

大信号直接调制半导体激光器的谐波非线性失真特性研究

本文对微波副载波光纤传输中最关心的大信号调制半导体激光器的谐波非线性进行了理论与实验研究。在ＬＤ速率方程的基础上，建立了一个适合计算谐波失真特性的分析模型。同时，对这一个国产１．５５μｍＩｎＧａＡｓＰＤＣ－ＰＢＨ－ＤＦＢ－ＬＤ的二次与三次谐波特性进行了测量，结果与理论计算值一致。     

低压MOCVD外延生长InGaAsP／InP应变量子阱材料与器件应用

本文报道用低压有机金属化合物化学气相淀积（ＬＰ－ＭＯＣＶＤ）外延生长ＩｎＧａＡｓＰ／ＩｎＰ应变量子阶材料，材料参数与外延条件的关系，量子阱器件的结构设计及其器件应用．用所生长的材料研制出宽接触阈值电流密度小于４００Ａ／ｃｍ２（腔长４００μｍ），ＤＣ－ＰＢＨ结构阈值７～１２ｍＡ的１．３μｍ量子阱激光器和宽接触阈值电流密度小于６００Ａ／ｃｍ２（腔长４００μｍ），ＤＣ－ＰＢＨ结构阈值９～１５ｍＡ的１．５５μｍ量子阶激光器以及高功率１．３μｍ量子阱发光二极管和ＩｎＧａＡｓＰＩＮ光电探测器．     

集成区含阶梯缓变InGaAsP层的具有超高fmax,fT的双异质结双极晶体管

本文用不同的发射极宽度和长度与集电极电流Ｉｃ和集电极－发射极间电压ＶＣＥ的函数关系研究了集电区含ＩｎＧａＡｓＰ层、基区为Ｚｎ高掺杂的小尺寸ＩｎＰ／ＩｎＧａＡｓＤＨＢＴ的高频性能。结果表明，减小发射极宽度比减小其长度能更有效地提高ｆｍａｘ，０．８μｍ发射极金属条宽的ＤＨＢＴ在Ｉｃ＝４ｍＡ的小电流时，具有超高的ｆｍａｘ和ｆＴ，其数值分别为２６７ＧＨｚ和１４４ＧＨｚ，ｆｍａｘ的增加归结为基区电阻和降低了     

质子轰击GaP电光采样测量

在ｎ－ＧａＰ衬底上制作共面波导（ＣＰＷ）,用质子轰击的方法减小共面波导的漏电损失,用倍频扫描移相电光采样技术测量了１～５ＧＨｚ微波信号．质子轰击后ＧａＰＣＰＷ的电阻增大了４个量级,在２．３０ＧＨｚ微波信号时,质子轰击ＧａＰＣＰＷ电光采样测量获得了１０ｍＶ／Ｈｚ的电压灵敏度．     

集电区阶梯缓变InGaAsP层的具有超高f＿（max）、f＿T的双异质结双极晶体管

本文用不同的发射极宽度和长度与集电极电流Ｉ＿ｃ和集电极－发射极问电压Ｖ＿ＣＥ的函数关系研究了集电区含ＩｎＧａＡｓＰ层、基区为Ｚｎ高掺杂的小尺寸ＩｎＰ／ＩｎＧａＡｓＤＨＢＴ的高性能。结果表明，减小发射极宽度比减其长度能更有效地提高，０．８μｍ发射极金属条宽的ＤＨＢＴ在Ｉ＿ｃ＝４ｍＡ的小电流时，具有超出超高的ｆ＿（ｍａｘ）和ｆ＿Ｔ，其数值分别为２６７ＧＨｚ和１４４ＧＨｚ，ｆ＿（ｍａｘ）的增加归结为基区电阻和降低了的Ｂｃ结电容乘积的降低。     

All-selective MOVPE-grown 1.3-μm strained multi-quantum-wellburied-heterostructure laser diodes

Strained InGaAsP multi-quantum-well (MQW) double-channel planar-buried-hetero (DC-PBH) laser diodes (LDs) were fabricated by selective metalorganic-vapor-phase epitaxy (MOVPE). In the laser fabrication process, both the strained MQW active layer and current blocking structure were directly formed by selective MOVPE without any semiconductor etching process. The LDs are called all-selective MOVPE-grown BH LDs. The laser fabrication process can achieve both a precisely controlled gain waveguide structure and an excellent current blocking configuration, realizing the optimized DC-PBH structure. These aspects are essential to the high-performance and low-cost LD, which is strongly demanded for optical access network systems or fiber-to-the-home networks. This paper will show the excellent high-temperature characteristics for 1.3-μm Fabry-Perot LDs which have a record threshold current of 18 mA with a low-operation current of 56 mA for 10 mW, and 74 mA for 15 mW at 100°C with extremely high uniformity. Furthermore, reliable long-term operation at high temperature (85°C) and high-output power of 15 mW has been demonstrated for the first time     

GHz级半导体激光器组件的设计与实现

本文报导了一种制备ZrO2高温快离子导体的新方法,使用连续CO2激光束在非平衡条件下熔凝CaO及MgO稳定的ZrO2快离子导体,激光作用时间只有几分钟。在室温至1000℃的范围内测量了样品的电导率,其结果与国外用常规方法制得的同类快离子导体的研究结果相当。     

High-power single-longitudinal-mode operation of 1.3 ?m DFB-DC-PBH LD

CW light output power as high as 38 mW at room temperature and with a CW operable temperature as high as 80°C, both under single-longitudinal-mode operation, has been achieved for the first time in newly developed 1.3 ?m distributed-feedback (DFB) laser diodes with a double-channel planar buried heterostructure (DC-PBH).     

High-peak-power picosecond optical pulse generation from highly RF-modulated InGaAsP DH diode laser

The feasibility for generating high-peak-power ultrashort optical pulses was demonstrated from a highly RF-modulated InGaAsP DC-PBH laser diode at 1.3 ?m for the first time. Measured pulse width is found to be approximately 28 ps at 7 mW averaged output power, and peak output power reached about 1.2 W at 210 MHz repetition frequency. Higher peak output and shorter optical pulses could be expected with this type of semiconductor diode laser in the near-infra-red region.     

用LPE研制的室温连续工作的1．48μm单量子阱激光器

利用液相外延（ＬＰＥ）技术研制出室温连续工作的ＩｎＧａＡｓＰ／ＩｎＰ分别限制单量子阶（ＳＣＨ－ＳＱＷ）双沟平面掩埋（ＤＣ－ＰＢＨ）激光器。室温下，腔面未镀膜的激光器最低阈值电流为２３ｍＡ（激光器腔长为２００μｍ，ＣＷ，１３℃）。激射波长为１．４８μｍ，最高输出功率达１８．８ｍＷ（Ｌ＝２００μｍ．ＣＷ，１８℃）。脉冲输出峰值功率大于５０ｍＷ（脉冲宽度１μｓ、频率１ｋＨｚ），未见功率饱和。量子阱的阱宽为２０ｎｍ［１］．     

InGaAsP double-channel- planar-buried-heterostructure laser diode (DC-PBH LD) with effective current confinement

A new high-performance 1.3-μm InGaAsP semiconductor laser is described, in which effective current confinement into the active region has been realized. A p-n-p-n current blocking structure is made by liquid-phase epitaxy (LPE) on both sides of the active-stripe mesa which is defined by a pair of channels in the double-heterostructure wafer. The double-channel-planar-buried-heterostructure laser diodes (DC-PBH LD's) exhibit high-laser performances, such as a high differential quantum efficiency of 78-percent maximum, which results in high electrical to optical power conversion efficiency 43 percent, and high light output power of over 50 mW, as a result of the improvement in the current blocking structure. The threshold current temperature sensitivity is found experimentally to be reduced remarkably by increasing the doping concentration in the p-cladding layer. Characteristic temperature as high as 100 K has been obtained. CW operation is possible up to 130°C.     

Reliability of semiconductor lasers for undersea optical transmission systems

The reliability of laser diodes developed for undersea optical transmission systems is analyzed. Up to 1000 device samples of two types (DC-PBH and VSB) are used. An aging test with constant light power operation of 5 mW is carried out at 10, 50, and 70°C for 10 000 h. The median lifetime at 10°C is conservatively estimated to be 1.6 × 10⁶hours. Failure rate at 10°C is estimated at 250 FIT's at 25 years of service for the wear-out failure mode and at less than 50 FIT's for the random failure mode with a sufficient margin. Furthermore, it is determined that reliability can be further improved by selection of long-life lasers through an additional third step screening aging.     

Reliability of semiconductor lasers for undersea optical transmission systems

The reliability of laser diodes developed for undersea optical transmission systems is analyzed. Up to 1000 device samples of two types (DC-PBH and VSB) are used. An aging test with constant light power operation of 5 mW is carried out at 10, 50, and 70°C for 10 000 h. The median lifetime at 10°C is conservatively estimated to be1.6 times 10^{6}hours. Failure rate at 10°C is estimated at 250 FIT's at 25 years of service for the wear-out failure mode and at less than 50 FIT's for the random failure mode with a sufficient margin. Furthermore, it is determined that reliability can be further improved by selection of long-life lasers through an additional third step screening aging.     

High-power aging test on 1.3 ?m DC-PBH lasers with reflective coated mirror

High-power aging tests on 1.3 ?m double-channel planar buried-heterostructure (DC-PBH) lasers with a reflective coated mirror have been performed. Stable operation for over 6000 h has been demonstrated under constant power conditions of 20 and 30 mW from the front facet at 50°C.