Fe膜流化法制备FeS2薄膜

由于ＦｅＳ２具有窄的禁带宽度（Ｅｇ＝０．９５ｅＶ）和高的吸收系数（ａ〉６×１０＾５ｃｍ＾－１），使它成为一种很有发展前途的太阳能材料。本文主要介绍了用射频溅射制备铁膜，然后在真空中（１０＾－１Ｐａ），通过控制时间和温度进行硫化。经ＸＲＤ和ＡＥＳ对薄膜进行分析，表明试样在硫化温度Ｔ＝４００℃，时间ｔ＝４８ｈ的条件下，Ｆｅ膜转变为ＦｅＳ２膜。     

高质量非晶硅锗材料的研制

ａ－ＳｉＧｅ：Ｈ材料的光电性能强烈地依赖于沉积条件，选择适当的氢稀释率、气体压强，掺锗率和辉光功率，获得了光带隙为１．４５ｅＶ，光暗电导比为１．６×１０＾５的高质量ａ－ＳｉＧｅ：Ｈ材料。     

钝化膜抗γ辐照的研究

研究了几种不同的钝化膜的γ辐照特性，初步揭示单纯的ＳｉＯ２膜不具备抗γ辐照的能力，厚度为１００ｎｍ涂有聚酰亚胺的ＳｉＯ２膜当辐照剂量小于１０＾６拉德（Ｓｉ）时具有良好的抗γ辐照作用。同时指出了四甲基氢氧化胺对Ｓｉ－ＳｉＯ２界面也有影响。     

用光电灵敏度法研究a—Si：H中的电荷放大效应

测量了缝电极和梳形电极ａ－Ｓｉ：Ｈ样品的光伏安特性和光电灵敏度,撮由光电灵敏度计算电荷放大增益的方法,由此法测现的ａ－Ｓｉ：Ｈ的电荷放大增益,在１０＾５Ｖ／ｃｍ电场下,高达４．３×１０＾３、本文从能态图讨论了ａ－Ｓｉ：Ｈ中电荷放大效应的产生过程。由测量的增产佃值计算了电子迁移率与寿命之积。     

大面积高效率高稳定非晶硅太阳电池的研究

根据电流连续性原则和光伏材料选择原则，对叠层电池的电流匹配进行了研究，结果表明，电流匹配是影响叠层电池短路电流和转换效率的重要因素之一，电流匹配可以通过调整单元电池厚度来实现，在此基础上，获得了面积为４００ｃｍ＾２，转移效率分别为８．２８％，７．５２％和６．７４％的ａ－Ｓｉ／ａ－Ｓｉ，ａ－Ｓｉ／ａ－ＳｉＧｅ和ａ－Ｓｉ／Ａ－Ｓｉ／ａ－ＳｉＧｅ高效率叠层电池。     

氩离子轰击对射频溅射法制备的a-SiC∶H膜退火形成6H-SiC的影响

本文对射频溅射法淀积的ａ－ＳｉＣ∶Ｈ膜热退火形成６Ｈ－ＳｉＣ相进行了研究．我们采用红外透射谱、喇曼背散射谱和Ｘ光衍射谱来研究退火形成６Ｈ－ＳｉＣ的过程．在较高的射频功率下淀积的ａ－ＳｉＣ∶Ｈ膜经８００℃６０分钟等时退火后转变为６Ｈ－ＳｉＣ相，该温度低于在低功率下制备的ａ－ＳｉＣ∶Ｈ形成６Ｈ－ＳｉＣ的温度（１０００℃）．高功率可导致６Ｈ－ＳｉＣ形成温度的降低与膜中硅及石墨团簇的消失，同时高能量的氩离子轰击可使膜中氢含量减少及各组分均相．通过改变射频功率，本文研究了氩离子轰击对ａ－ＳｉＣ∶Ｈ膜及形成６Ｈ－Ｓｉ     

氩离子轰击对射频溅射法制备的a—SiC：H膜退火形成6H—SiC的影响

本对射频溅射法沉积的ａ－ＳｉＣ：Ｈ膜热退火形成６Ｈ－ＳｉＣ相进行了研究。我们采用红外透射谱、喇曼背散射谱和Ｘ光衍射谱来研究退火形成６Ｈ－ＳｉＣ的过程。在较高的射频功率下沉积的ａ－ＳｉＣ：Ｈ膜经８００℃６０分钟等时退火后转变为６Ｈ－ＳｉＣ相，该温度低于在低功率下制备的ａ－ＳｉＣ：Ｈ形成６Ｈ－ＳｉＣ（１０００℃）。高功率可导致６Ｈ－ＳｉＣ形成温度的降低与膜中硅及石墨团簇的消失，同时高能量的氩离子轰击     

PrBa2Cu3O6.3和YBa2Cu3O6.3材料的红外声子谱的比较

报道了ＹＢａ２Ｃｕ３Ｏ６．３和ＰｒＢａ２Ｃｕ３Ｏ６．３多晶陶瓷ｃ抽取向薄膜中的红外光谱，在ＰｒＢａ２Ｃｕ３Ｏ６．３中以９个声子模，对应于５Ｅｕ＋４Ａ２ｕ振动。在ＹＢａ２Ｃｕ３Ｏ６．３材料中观察到１０个声子模，对应于６Ｅｕ＋４Ａ２ｕ振动，其中Ｐｒ的Ｅｕ和Ａ２ｕ模分别为位于１７０ｃｍ＾－１和１９８ｃｍ＾－１，Ｙ和Ｅｕ和Ａ２ｕ模分别位于１９１ｃｍ＾－１和２１７ｃｍ＾－１ＰｒＢａ２Ｃｕ３Ｏ６．３和ＹＢａ２     

GaAs低能Si^＋及SiF^＋离子注入研究

本文对３０ｋｅｖ Ｓｉ＾＋和分子离子ＳｉＦ＾＋注入半绝缘ＧａＡｓ的行为进行了研究对比。注入Ｓｉ＾２＋样品的Ｓｉ原子纵向分布与相同条件下用ＳＩＣＴ模拟程序理论计算出的分布相一致。经灯光９００℃１０″ＲＴＡ，电激活率可达６０％，电化学Ｃ－Ｖ测得的载流子纵向分布与注入态ＳＩＭＳ结果相同，可以获得近０．２μｍ的ＧａＡｓ有源层。而注入分子离子ＳｉＦ＾＋样品，虽注入层较浅，但灯光退火后，电激活率很低。因此，用     

In0.53Ga0.47As表面钝化及降低界面态密度的方法

采用ＰＥＣＶＤ技术，以ＴＥＯＳ为源，对Ｉｎ０．５３Ｇａ０．４７Ａｓ材料进行表面钝化，研究了ＳｉＯ２／Ｉｎ０．５３Ｇａ０．４７Ａｓ的界面态，提出降低界面态密度的方法，使其降低到８．５×１０＾１０ｅＶ＾－１ｃｍ＾－２。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first