一种16位音频ΣΔA/D转换器(英文)

提出了一种16位立体声音频新型稳定的5阶ΣΔA/D转换器.该转换器由开关电容ΣΔ调制器、抽取滤波器和带隙基准电路构成.提出了一种新的稳定高阶调制器的方法和一种新的梳状滤波器.采用0.5μm5V CMOS工艺实现ΣΔA/D转换器.ΣΔA/D转换器可以得到96dB的峰值SNR,动态范围为96dB.整个芯片面积只有4.1mm×2.4mm,功耗为90mW.     

一种16位音频∑△ A/D转换器

提出了一种16位立体声音频新型稳定的5阶∑△A/D转换器.该转换器由开关电容∑△调制器、抽取滤波器和带隙基准电路构成.提出了一种新的稳定高阶调制器的方法和一种新的梳状滤波器.采用0.5μm 5V CMOS工艺实现∑△A/D转换器.∑△A/D转换器可以得到96dB的峰值SNR,动态范围为96dB.整个芯片面积只有4.1mm×2.4mm,功耗为90mW.     

A 16 bit Stereo Audio ΣΔ A/D Converter

提出了一种16位立体声音频新型稳定的5阶∑△A/D转换器.该转换器由开关电容∑△调制器、抽取滤波器和带隙基准电路构成.提出了一种新的稳定高阶调制器的方法和一种新的梳状滤波器.采用0.5μm 5V CMOS工艺实现∑△A/D转换器.∑△A/D转换器可以得到96dB的峰值SNR,动态范围为96dB.整个芯片面积只有4.1mm×2.4mm,功耗为90mW.     

一种单环5阶高精度音频△-∑ A/D转换器

采用英飞凌0.11 μm CMOS工艺,实现了一种用于音频范围的高精度△-∑ A/D转换器.调制器采用1位量化的5阶单环前馈结构,ADC过采样率为256.A/D转换器模拟调制器工作于5V电压,数字滤波器工作于1.2V电压,整体功耗为20.52 mW,版图面积3.1 mm2.仿真结果显示,设计的A/D转换器在20 kHz信号带宽内达到108.9 dB的信噪失真比,有效位数为18位.     

JSM—T_(300)扫描电镜物镜电路分析

扫描电镜的物焦镜距与加速电压和物镜电流有关。扫描电镜要求物镜电流具有较大的变化范围。T_300扫描电镜物镜电路如图所示。IC8为D/A转换器。波段开关S_3、二极管矩阵电路(D_10～D_27)、R_52～R_60、R_B_(23)组成了二进制码编码电路,为D/A转换器提供八位二进制码。D_8、R_(50)、IC9_1组成的电路为D/A转换器提供参考模拟电压V_REF。D_8(IS2192)的稳压值为8.2V,即A点的电压为8.2V。电压跟随器IC9_1输出的电压V_B=V_REF=V_A=8.2V。D/A转换器的输出电压Vout=-(V_REF/R_49)·R_51(A_8/2~1+A_7/2~2+A_6/2~3+A_5/2~4+A_4/2~5+A_3/2~6+A_2/2~7+A_1/2~8)。若当S_3的刀与第一掷相接时,D_10导通,D_11～D_27均不导通,D/A转换器的数字输入端A_8=0,A_7～A_1,均为1。因此D/A转换器的输出电压Vout=4V。D/A转换器的输入状态和输出电压与S_3对应关系如表1所示。从中可看到D/A转换器的输出电压范围为-4～-8.1V。D/A转换     

一种超高速10位D/A转换器的设计

设计了一种超高速差分电流舵10位D/A转换器.该D/A转换器电路由8路分时复用器、5-31"温度计"译码器、快速转换电流开关和恒流源阵列等单元组成,采用0.35 μm SiGe BiCMOS标准工艺制造.该10位D/A转换器的数据更新率达到1 GSPS.介绍了电路实现原理和各单元的结构及设计思想,给出了电路仿真结果,并对实际电路进行了测试和分析.结果表明,该10位D/A转换器具有精度高、速度快、通用性强等优点.     

正弦振幅转换技术提升中间总线转换器性能

高频率(如1 MHz)开关转换DC-DC转换器的出现,令转换器的功能压缩在比从前小很多的空间内.上世纪80年代零电流(ZCS)及零电压开关(ZVS)架构的出现,大大减少了转换器的开关损耗,令转换器可在高频工作,突破了当时转换器的功率密度水平.DC-DC转换器的功率由1 W/in3跃升至20W/in3.每瓦功率所需的体积,重量均显著的减少.扩宽DC-DC转换器的应用范围,亦促成分布式电源架构(DPA)的应用.     

低功耗、全差分流水线操作CMOSA/D转换器

提出一种基于运算跨导放大器共享技术的流水线操作A/ D转换器体系结构,其优点是可以大幅度降低芯片的功耗和面积.采用这种结构设计了一个10位2 0 MS/ s转换速率的全差分流水线操作A/ D转换器,并用CSMC0 .6 μm工艺实现.测试结果表明,积分非线性为1.95 L SB,微分非线性为1.75 L SB;在6 MHz/ s采样频率下,对1.84 MHz信号转换的无杂散动态范围为5 5 .8d B;在5 V工作电压、2 0 MHz/ s采样频率下,功耗为6 5 m W.     

新型A/D和D/A转换器

日本某公司研制出可望加速实用数字电视机,数字磁带录象机和电视摄象机、高图象质量电视机推广应用的新型模/数(A/D)和数/模(D/A)转换器. 新转换器的分辨力为8位,最大采样速率为30兆赫,功耗为700毫瓦.一般全并行型通用A/D转换器约需17,000个元件才能组合成大规模集成电路,并需采用2微米极精确的制造技术,而该公司的串-并行A/D转换器仅需2,300个元件,能用5微米双极型通     

Cirrus Logic全新编解码器CS42406

Cirrus Logic为帮助数字娱乐产品制造商将更多价格合理、功能先进的音频特性集成到消费电子产品中,推出了一系列新型环绕声编解码器。其中 CS42406是音频/视频设备和DVD接收机 (DVD播放机/音频接收机组合) 制造商的理想选择,这一价格低廉的环绕声CODEC方案带有2个模数(A/D)和6个数模(D/A)转换器信道,提供24位转换,可工作于3 V至5 V模拟和数字电源。其A/D和D/A转换器采用单端输入和输出,因此可简化系统设计该新品。D/A转换器动态范围为102 dB,A/D转换器为105 dB。所有D/A转换器信道都具有数字音量控制功能,并可支持192 kHz抽样…     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.