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报道了在中波工艺基础上,Si 基碲镉汞分子束外延短波工艺的最新研究进展,通过温度标定、使用反射式高能电子衍射、高温计的在线测量和现有的中波 Si 基碲镉汞温度控制曲线建立及优化了 Si 基碲镉汞短波材料的生长温度控制曲线;获得的 Si 基短波 HgCdTe 材料表面光亮、均匀,表面缺陷密度小于3000 cm -2;基于此技术成功制备出了 Si 基短/中波双色材料。 相似文献
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随着红外焦平面阵列规模的扩大,由于尺寸和成本的限制,传统晶格匹配的碲锌镉衬底逐渐成为碲镉汞红外焦平面探测器发展的瓶颈,大尺寸、低成本硅基碲镉汞材料应运而生。本文采用分子束外延工艺生长获得了3 in Si基中波碲镉汞薄膜材料,通过采用金相显微镜、傅里叶红外光谱仪、双晶X射线衍射仪、湿化学腐蚀位错密度(EPD)法、Hall测试系统等检测手段对Si基中波碲镉汞分子束外延薄膜材料进行表面、光学、结构和电学性能表征,并采用标准平面器件工艺制备中波640×512焦平面探测阵列进行材料验证,结果表明该材料性能与国际先进水平相当。 相似文献
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报道了分子束外延锗基中波碲镉汞薄膜材料以及320×256锗基中波碲镉汞红外焦平面探测器研究的初步结果。利用分子束外延技术基于3英寸锗衬底生长的中波碲镉汞薄膜材料,平均宏观缺陷密度低于200 cm-2,平均半峰宽优于90 arcsec,平均腐蚀坑密度低于2.9×106 cm-2;采用标准的二代平面工艺制备的320×256锗基中波碲镉汞红外焦平面探测器,平均峰值探测率达到3.8×1011cm·Hz1/2W-1,平均等效噪音温差优于17.3 mK,非均匀性优于6.5%,有效像元率高于99.7%。 相似文献
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采用分子束外延技术(MBE)制备了碲化镉(CdTe)原位钝化的中波碲镉汞(HgCdTe)材料。原子力显微镜(AFM)和扫描电子显微镜(SEM)测试结果表明,分子束原位外延的CdTe可见cross-hatch,表面粗糙度为1~2 nm,CdTe和HgCdTe界面结合紧密。微波光导测试结果显示,77 K时,与表面处理后非原位CdTe钝化的HgCdTe材料相比,CdTe原位钝化的HgCdTe材料的少子寿命较大。制备了分子束外延CdTe原位钝化的中波HgCdTe光伏器件,和相同材料上的非原位CdTe/ZnS双层钝化制备的器件I-V特性相似。 相似文献
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在(211)B碲锌镉衬底上,采用分子束外延生长制备了PPP型中长双色碲镉汞材料,通过台面孔刻蚀、侧壁钝化等工艺,实现中长双色640×512红外焦平面探测器组件研制。中长双色碲镉汞材料测试结果表明,表面宏观缺陷(2~10μm)密度统计分布约773 cm-2,同时对材料进行了XRD双晶衍射半峰宽(FWHM)测试和位错腐蚀坑(EPD)统计,XRD测试FWHM约31.9 arcsec,EPD统计值约为5×105 cm-2;双色器件芯片台面刻蚀深度达到8μm以上,深宽比达到1∶1以上,侧壁覆盖率达到72.5%。中长双色红外焦平面组件测试结果表明,中波波长响应范围为3.6~5.0μm,长波波长响应范围为7.4~9.7μm,中波向长波的串音为0.9%,长波向中波的串音为3.1%,中波平均峰值探测率达到3.31×1011 cm·Hz1/2/W,NETD为17.7 mK;长波平均峰值探测率达到6.52×1010 cm·Hz1/2/W,NETD为32.8mK;中波有效像元率达到99.46%,长波有效像元率达到98.19%,初步实现中长双色红外焦平面组件研制。 相似文献
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文章通过对双色红外焦平面结构、工作模式、各种信号输入级电路的研究,提出了顺序和同步工作的两种焦平面读出电路结构,输入级都是直接注入方式。短波( SW)和中波(MW)二个波段的光电流分别在各自的电容上积分,然后输出到后级电路,初步获得了电路的仿真结果。 相似文献
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利用分子束外延(Molecular Beam Epitaxy, MBE)系统生长了In掺杂硅基碲镉汞(Mercury Cadmium Telluride, MCT)材料。通过控制In源温度获得了不同掺杂水平的高质量MCT外延片。二次离子质谱仪(Secondary Ion Mass Spectrometer, SIMS)测试结果表明,In掺杂浓度在1×1015~2×1016 cm-3之间。表征了不同In掺杂浓度对MCT外延层位错的影响。发现位错腐蚀坑形态以三角形为主(沿<■>方向排列),且位错密度与未掺杂样品基本相当。对不同In掺杂浓度的材料进行汞饱和低温处理后,样品的电学性能均有所改善。结果表明,In掺杂能够提高材料的均匀性,从而获得较高的电子迁移率。 相似文献
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The reproducible molecular-beam epitaxy (MBE) growth of dual-band Hg1−xCdxTe (MCT) heterostructures requires routine post-growth wafer analysis for constituent layer thickness and alloy composition,
therefore, demanding nondestructive characterization techniques that offer quick data feedback. This paper reports a multilayer
structure model, which can be least-square fit directly to either Fourier transform infrared (FTIR) transmission or reflection
spectra to provide individual layer thickness, alloy composition, and grading information for various complex structures.
The model, we developed, is based on an accurate representation of both the real and imaginary parts of the MCT dielectric
function across and above E
g
as a function of alloy composition. The parametric, MCT optical-dielectric function for compositions varying between x=0.17
to x=0.5 was developed in the range from 400 cm−1 to 4,000 cm−1, based on a semi-empirical model for the absorption coefficient and extrapolation of the refractive index across E
g
. The model parameters were refined through simultaneous fits to multiple reflection and transmission data sets from as-grown,
double-layer planar heterostructure (DLPH) structures of variable thickness. The multilayer model was tested on a variety
of simple DLPH structures with thick absorber layers (>8 μm) and was compared against traditional FTIR analysis and cross-section
optical microscopy and showed good agreement in both composition and thickness. Model fits to dual-color MCT data and subsequent
analysis of the internal parameter correlation have demonstrated that error bars on absorber layer composition and thickness
could be as low as ∼0.0005 and ∼0.02 μm, correspondingly. 相似文献
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碲镉汞(Mercury Cadmium Telluride, MCT)材料的表面钝化是红外探测器制备中的关键工艺之一。高性能MCT器件需要稳定且可重复生产的钝化表面和符合器件性能要求的界面。因此,探究MCT表面钝化技术具有重要意义。研究了MCT的分子束外延(Molecular Beam Epitaxy, MBE)原位钝化与磁控溅射钝化两种钝化技术。结果表明,MBE原位钝化膜层的致密性较好,钝化层表面的缺陷孔洞较小,钝化层与MCT的晶格匹配度较好,器件流片的电流-电压(I-V)特性要优于磁控溅射正常钝化。 相似文献
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随着红外焦平面技术的发展,大面阵红外焦平面器件在遥感、气象、资源普查和高分辨对地观测卫星上得到了广泛应用。因此,基于第三代红外焦平面技术的超大规模焦平面器件成为国内外研究热点。文中介绍了昆明物理研究所采用n-on-p技术路线成功研制的短波(Short Wave, SW) 2 k×2 k(18 μm,像元中心距)碲镉汞红外焦平面器件。短波2 k×2 k碲镉汞红外焦平面器件突破了大尺寸碲锌镉(CdZnTe)衬底制备和大面积液相外延薄膜材料生长技术,衬底尺寸由Φ75 mm增加到Φ90 mm,获得了高度均匀的大面积碲镉汞(HgCdTe)薄膜材料。通过大面阵器件工艺、大面阵倒装互连等技术攻关,最终获得了有效像元率大于99.9%、平均峰值探测率(D*)大于4×1012 (cm·Hz1/2)/W、暗电流密度在1 nA/cm2的高性能短波2 k×2 k(18 μm)碲镉汞红外焦平面器件。 相似文献
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P. Mitra S. L. Barnes F. C. Case M. B. Reine P. O’Dette R. Starr A. Hairston K. Kühler M. H. Weiler B. L. Musicant 《Journal of Electronic Materials》1997,26(6):482-487
We report the implementation of recent advances in metalorganic chemical vapor deposition (MOCVD) for in situ growth of four-layer HgCdTe mid wave/ long wave (MW/LW) simultaneous dual-band 64 × 64 infrared detector arrays. This independently
accessed, simultaneous, double-heterojunction p-n-N-P dualband detector has two back-to-back stacked photodiodes grown on
CdZnTe (100) substrates. The LW photodiode is a p-on-n heterojunction grown on top of an MW N-on-P heterojunction photodiode.
Secondary ion mass spectrometry depth profiles of these 28 μ m thick p-n-N-P dual-band films show four well-defined regions
of alloy composition and doping, and agree well with the device design. 64 × 64 arrays of dual-band detectors were fabricated
from these films using electron cyclotron resonance dry etching and CdTe passivation, and hybridized to a dual-band readout
chip. Two bump inter-connects in each unit cell provide independent electrical access to the back-to-back MW and LW photodiodes,
and allow the MW and LW photocurrents to be separate and independent. The dualband infrared focal plane arrays (IRFPAs) spectral
response data at 78K are well-behaved and are fully consistent with that observed in individual singleband LW p-on-n and MW
N-on-P heterojunction devices of the same design. The hybridized 64 × 64 duai-band FPAs have MW and LW average in-band quantum
efficiencies of 79 and 67%, and median D* values of 4.8 × 1011 and 7.1 × 1010 cm-√Hz/W, in the respective spectral bands at 78K. The data demonstrate that MOCVD has progressed significantly toward being
a practical and viable vapor phase in situ growth technology for advanced bandgap-engineered HgCdTe detector arrays. 相似文献
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报道了基于分子束外延(Molecular Beam Epitaxy, MBE)碲镉汞(Mercury Cadmium Telluride, MCT)技术的大幅宽、多谱段、大像元高光谱红外探测器的最新研究进展。采用MBE技术制备出高质量MCT材料;采用成熟的n-on-p技术路线制备探测芯片,并针对特殊形状的大像元进行了优化;高光谱专用读出电路设计针对短波、窄谱段、小信号等典型特征进行了优化,并针对光谱应用加入行增益可调等功能设计。测试结果表明,组件基本性能良好,有效像元率大于99.5%,平均量子效率优于70%。 相似文献
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M. F. Vilela K. R. Olsson E. M. Norton J. M. Peterson K. Rybnicek D. R. Rhiger C. W. Fulk J. W. Bangs D. D. Lofgreen S. M. Johnson 《Journal of Electronic Materials》2013,42(11):3231-3238
Mercury cadmium telluride (HgCdTe) grown on large-area silicon (Si) substrates allows for larger array formats and potentially reduced focal-plane array (FPA) cost compared with smaller, more expensive cadmium zinc telluride (CdZnTe) substrates. In this work, the use of HgCdTe/Si for mid- wavelength/long-wavelength infrared (M/LWIR) dual-band FPAs is evaluated for tactical applications. A number of M/LWIR dual-band HgCdTe triple-layer n-P-n heterojunction device structures were grown by molecular-beam epitaxy (MBE) on 100-mm (211)Si substrates. Wafers exhibited low macrodefect densities (< 300 cm?2). Die from these wafers were mated to dual-band readout integrated circuits to produce FPAs. The measured 81-K cutoff wavelengths were 5.1 μm for band 1 (MWIR) and 9.6 μm for band 2 (LWIR). The FPAs exhibited high pixel operability in each band with noise-equivalent differential temperature operability of 99.98% for the MWIR band and 98.7% for the LWIR band at 81 K. The results from this series are compared with M/LWIR FPAs from 2009 to address possible methods for improvement. Results obtained in this work suggest that MBE growth defects and dislocations present in devices are not the limiting factor for detector operability, with regards to infrared detection for tactical applications. 相似文献