基于Qt/Embedded视频采集方案的设计与实现

为解决Qt/Embedded视频采集过程中图像的连续性和实现过程的简易性,基于ARM-Linux中V4L2(Video forLinux2)视频采集架构模型提出两种设计方案:一是使用Qt/Embedded提供的QThread类,将基于Linux视频采集应用程序移植到QT开发的GUI界面上;二是采用其中的QPainter类,直接实现USB视频采集显示。并以第二种方案为例将视频采集GUI发布到嵌入式设备上。以上方案的设计方法对非GUI到GUI的移植具有重要的参考意义,同时对视频图像的后端处理具有实用价值。     

半导体激光器驱动电源的嵌入式GUI开发

嵌入式GUI具有高度的可移植性和可裁剪性,基于Qt/Embedded技术开发嵌入式GUI可以方便地移植到嵌入式操作系统上。介绍了嵌入式硬件设计、Linux下Qt/Embedded开发环境的搭建、Qt应用程序的开发,以及移植到嵌入式Linux开发板的过程,提出用Qt/Embedded开发半导体激光器驱动电源的图形控制界面设计方法和思路,并成功实现了对半导体激光器驱动电源的图形界面控制。     

嵌入式Linux系统的Qt/Embedded图形界面开发

首先根据ARM9开发平台与GUI(图形用户界面)软件开发环境Qt/Embedded2.3.7,结合实例介绍在嵌入式Linux系统上Qt/Embedded的编程方法,阐述了基于嵌入式Linux图形界面的开发过程并具体描述Qt/Embedded图形系统的移植,包括编译环境的建立、编译Qt/Embedded库等。结果验证了用Qt/Embedded开发的图形用户界面应用于具体的硬件平台上收到了良好效果。     

Qt/Embedded在S3C2440平台上的移植与开发

介绍了Qt/Embedded图形用户界面(GUI)的软硬件开发平台,结合具体实例,详细阐述了Qt/Embedded在S3C2440平台上移植的方法和应用程序开发的过程,并在开发平台上经过验证.     

基于Qt/Embedded的GUI移植及应用程序开发

介绍了系统平台构建;重点分别从主机环境和XSbase255嵌入式开发板两部分介绍Qt/Embedded图形界面的移植,最后结合实例阐述了如何开发基于嵌入式Linux的应用程序以及文件系统镜像的制作。     

基于Qt/Embedded的GUI移植及应用程序开发

介绍了系统平台构建;重点分别从主机环境和XSbase 255嵌入式开发板两部分介绍Qt/Embedded图形界面的移植,最后结合实例阐述了如何开发基于嵌入式Linux的应用程序以及文件系统镜像的制作.     

基于Qt/Embedded的物流信息终端导航定位功能设计

本文介绍了Qt/Embedded图形界面系统在嵌入式Linux系统和S3C2410平台的物流信息终端上的移植与开发过程,以及在物流信息终端上定位功能的系统设计方案和Qt/Embedded编程实现,并给出实验结果。     

Qt／Embedded在OMAP5912平台上的移植

文中介绍了Qt／Embedded开发环境在Linux系统中的搭建和移植。采用了Qt／Embedded和Qtopia在OMAP5912上的交叉编译,库文件和应用程序的裁剪。同时对Qtopia软件进行了中文化显示。并从实践出发移植搭建了一个PDA（掌上电脑）的应用平台,该方法也适用于其它嵌入式产品的图形用户界面设计。     

DM6446中的Qt GUI视频叠加显示方法

采用Qt的嵌入式版本,即Qt/E,在DM6446的软件系统平台MontaVista Linux上进行视频GUI应用程序开发,充分利用了DM6446的在屏显示（OSD）模块的硬件特性,实现了在视频层上叠加GUI窗口层的视频叠加显示方法。视频数据的更新主要由硬件模块负责,避免了软件进行视频格式转换的CPU耗时,提高了视频显示的效率。应用程序目标平台上能够实现视频的实时采集和高效显示,说明Qt/E在DM6446中进行视频GUI开发具有实用性。     

Qt/Embedded应用程序中定制键盘的实现

随着Qt/Embedded更高版本的推出,定制嵌入式键盘有了更大的自由度。给出了基于嵌入式Linux和Qt/Embedded的的键盘设计与实现,描述了键盘驱动的实现,给出一种在Qt/Embedded的应用程序中对控件指定键盘驱动的方法,使嵌入式键盘驱动的开发和调试更为简便。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.