等离子体激活电子束物理气相沉积NiCoCrAlY涂层的制备及微观组织结构研究

针对传统电子束物理气相沉积(EB-PVD)制备的柱状晶结构MCrAlY涂层存在线性缺陷的问题,本文建立了等离子体激活EB-PVD(PA EB-PVD)设备,并采用PA EB-PVD技术制备出了具有等轴晶结构的新型NiCoCrAlY涂层。结果表明,增大电弧放电电压和基板偏压均可以提高沉积粒子的能量。随着沉积粒子能量增强,涂层逐渐由柱状晶结构转变为致密等轴晶结构,晶粒尺寸增大;另一方面,涂层成份离析效应增强,主要体现在Al含量降低和Cr含量升高。     

热处理对EB-PVD制备的TiAl/Nb复合材料微观组织的影响

对利用EB-PVD技术制备的TiAl/Nb微层板进行了热处理,分析了沉积态材料与热处理态材料的组织结构和物相的变化。热处理TiAl/Nb中态富Ti的TiAl层中成分沿沉积方向呈有规律的梯度变化但未形成周期,界面处的反应扩散区由B2相组成;TiAl层、扩散区和Nb层的显微组织形貌依次为含月牙形亚晶的柱状晶、细小等轴晶和粗大等轴晶;经1000℃/16h的真空退火处理后,Nb层和扩散区会因完全扩散而消失。     

工艺参数对EB-PVD制备YSZ涂层的影响

为探讨电子束物理气相沉积(EB-PVD)制备8 mol.%氧化钇稳定氧化锆(8YSZ)涂层过程中工艺参数对涂层致密性、表面粗糙度和晶粒择优取向生长的影响,利用扫描电镜、原子力显微镜和X射线衍射技术对涂层的上述性能进行了分析.分析结果表明,随沉积速率由750 nm/min下降至20 nm/min,YSZ涂层的晶粒逐渐聚合长大,晶粒之间的孔隙减少,涂层的气体扩散系数相应地由2.41×10-4cm4/(N·s)下降至6.56×10-5cm4/(N·s).YSZ涂层的表面粗糙度随靶基距的提高逐渐降低,涂层的晶体学取向随蒸汽粒子入射角的改变而改变,入射角为30°时(111)晶面具有平行于涂层表面排列的趋势,入射角为45°时(311)和(420)晶面具有平行于表面排列的趋势,而入射角为60°时(220)和(331)晶面具有平行于表面排列的趋势.     

EB-PVD及其制备功能涂层的研究进展

介绍了电子束物理气相沉积(EB-PVD)设备的结构、工艺技术特点等,重点介绍了EB-PVD技术在制备各种防护涂层方面所取得的成果及研究进展.     

EB-PVD 热障涂层的热循环失效机理

采用电子束物理气相沉积方法(EB—PVD)在NiCrAlY粘结层上沉积Y2O3部分稳定的ZrO2陶瓷层。对样品进行了1050C的热循环实验。结果表明，沉积态陶瓷层表面比较致密．其柱状晶粒簇拥成团，晶粒簇间存在间隙。随着热循环不断进行，陶瓷层表面变得疏松，晶粒簇间距增大，相邻较大的间隙互相连接成微裂纹。并逐渐横向及纵向扩展。1050C循环200次，粘结层氧化物是均匀连续的—薄层，主要由Al2O3组成；循环300次后,出现了NiO、尖晶石等氧化物。根据显微结构观察和EDS、XRD分析结果，提出了EB—PVD热障涂层热循环的失效机理。     

EB-PVD制备YSZ涂层的热震性研究

用电子束蒸发镀膜的技术制备一系列不同微观结构的YSZ涂层,通过对涂层进行热震实验,测试50次热循环,通过SEM、XRD对涂层样品微观结构进行表征。通过实验和表征结果发现制备束流在350mA的情况下YSZ涂层样品的热震性能最好。对涂层失效机理进行讨论得出,涂层表面过于致密阻碍热应力的缓解,表面过于疏松加速氧气的渗入,加速TGO的生长导致涂层剥落失效。     

EB-PVD在热障涂层中的研究及应用

EB-PVD是以高能电子束为热源的一种蒸发镀膜技术.在真空的环境下,高能离子束轰击靶材(金属,陶瓷等),使其融化、升华、蒸发,最后沉积在基片上.由于EB-PVD技术具有蒸发和沉积速率高,涂层致密,化学成分易于精确控制,可得到柱状晶组织,无污染,热效率高,基片与薄膜之间有较强的结合力等诸多优点,已被广泛应用于国防和民用领域.本文介绍了EB-PVD技术在制备热障涂层时优势、不足与改进措施.     

SiC薄膜制备工艺进展

本文综述了ＳｉＣ薄膜的制备工艺及进展，介绍了物理气相沉积、化学气相沉积、等离子化学气相沉积及光化学气相沉积等各处ＳｉＣ薄膜的制备方法，简单阐述了各种工艺对薄膜性能的影响，评述了各种制备工艺的优缺点。     

EB-PVD 热障涂层TGO中氧化物混合区的形成及其影响

研究了电子束物理气相沉积热障涂层在1150～30℃之间的循环氧化行为;分析了TGO中YSZ-Al2O3混合区的形成过程及其对TGO的生长与TBCs失效的影响.TGO的向外生长和TBC沉积时形成的YSZ细晶区是形成YSZ-Al2O3混合区的两个重要条件.YSZ-Al2O3混合区对TBCs失效的影响表现在加速TGO的生长和裂纹易在该混合区形成两方面.     

EB-PVD热障涂层粘结层/TGO界面性能的研究进展

本文介绍了电子束物理气相沉积(EB-PVD)技术制备热障涂层的界面失效行为,并在此基础上综述了活性元素对粘结层/热生长氧化物层(TGO)界面性能的作用机制.     

电子束沉积SiC/ZrO2热防护层的结构优化及其抗热震性能

高性能辐射热防护层是高超声速飞行器金属热防护系统的重要组成部分。为获得高性能的热防护层,利用L5 EB-PVD电子束物理气相沉积设备在Haynes 214镍基合金表面沉积了SiC/ZrO2防护层,测试了其在热循环条件下的抗热震性能;通过分析其沉积温度及厚度对残余热应力的影响,确定了热防护层的沉积工艺参数。结果表明:热防护层在800℃和900℃循环80次后未出现明显的宏观裂纹;1000℃循环60次后,SiC表面层应力集中区出现裂纹,在交变热应力作用下,裂纹不断扩展形成网状龟裂纹,最终导致热防护层剥落;热膨胀系数不匹配导致热防护层在急冷急热热震过程中产生热应力是导致其失效的主要原因。     

化学气相沉积SiC涂层生长过程分析

以高纯石墨为沉积基体,MTS为先驱体原料,在负压条件下沉积了CVD SiC涂 层.利用SEM和XRD分别对涂层的形貌及晶体结构进行了表征,SiC涂层表面呈菱柱状, (111)面为择优取向面.利用高分辨透射电镜对涂层与基体的界面结构、涂层的显微结构进行 了研究,得出CVD SiC涂层生长过程如下:SiC最初是沿着石墨基体的晶面取向开始生长 的}随后经历一段取向淘汰及调整的过程后,开始(111)晶面的生长.     

Distribution and structures of nanopores in YSZ-TBC deposited by EB-PVD

Distribution and arrangement of nanopores in an YSZ (7 wt% Y₂O₃–ZrO₂)-thermal barrier coating (TBC) deposited by an electron beam-physical vapor deposition (EB-PVD) have been investigated by means of transmission electron microscopy. The YSZ-TBC deposited by the EB-PVD showed a typical columnar structure normal to the bond coat surface on the substrate. It has been generally believed that one column is a single crystal and grows continuously from the substrate. In the present study, however, it was found that each column consisted of a number of subcolumns with different misorientations and contained nanopores at the subcolumn boundaries. In addition to the nanopores at the subcolumn boundaries, nanopores with smaller size were observed within subcolumns, and were arranged periodically perpendicular to the growth direction of the subcolumns. Such arrangement and distribution of nanopores may be due to the misorientation of YSZ plate-like grains in the formation and coalescence processes of the YSZ subcolumns.     

EB-PVD热障涂层对高温合金基体断裂特征影响的研究

采用EB－PVD方法在K3合金上（包括铸态和经标准热处理两种状态）沉积了由NiCoCrAlY金属粘结层和YSZ涂层顶层组成的双层结构的热障涂层,对未涂层和涂层试样的拉伸性能进行了评估,并分析了涂层的制备和中间处理过程中的基体的微观结构的变化。结果表明,在热障涂层的沉积以及中间处理过程中（真空前处理及后处理）,基体的铸态组织得到改善,产生了析出强化,使得在铸态K3合金基体上沉积热障兴层后基体的拉伸强度由800MPa提高到1050MPa,而在经过标准热处理的合金基体上沉积热障涂层对基体的力学性能几乎没有影响。     

Ultrafast thermal plasma physical vapor deposition of thick SiC films

Thick silicon carbide films have been successfully deposited at a deposition rate of 125 nm/s on stationary graphite substrates by the thermal plasma physical vapor deposition technique, with ultrafine SiC powder fed into a hybrid plasma jet and completely evaporated. The relationship between the processing parameters and the morphology, deposition rate, composition and crystal structure has been investigated under the typical conditions of substrate temperature in the range of 1400–1700 °C and chamber pressure of 250 Torr, and compared with the results of rotating substrate deposition at the substrate temperature of around 750 °C. It was found that the deposition rate and composition showed different processing parameter dependences for rotating substrate deposition and stationary substrate deposition. The films showed dense cross-sections or cauliflower-like structures depending on the deposition conditions.

©2003 Elsevier Science Ltd. All rights reserved.     

Distribution and structures of nanopores in YSZ-TBC deposited by EB-PVD

Distribution and arrangement of nanopores in an YSZ (7 wt% Y₂O₃–ZrO₂)-thermal barrier coating (TBC) deposited by an electron beam-physical vapor deposition (EB-PVD) have been investigated by means of transmission electron microscopy. The YSZ-TBC deposited by the EB-PVD showed a typical columnar structure normal to the bond coat surface on the substrate. It has been generally believed that one column is a single crystal and grows continuously from the substrate. In the present study, however, it was found that each column consisted of a number of subcolumns with different misorientations and contained nanopores at the subcolumn boundaries. In addition to the nanopores at the subcolumn boundaries, nanopores with smaller size were observed within subcolumns, and were arranged periodically perpendicular to the growth direction of the subcolumns. Such arrangement and distribution of nanopores may be due to the misorientation of YSZ plate-like grains in the formation and coalescence processes of the YSZ subcolumns.     

CVD SiC致密表面涂层制备及表征

考察了沉积温度、稀释气体流量对化学气相沉积(CVD)SiC涂层的显微结构及晶体结构的影响,分析得出:沉积温度为1100℃,稀释气体Ar流量<400mL/min时,制备的SiC涂层晶体结构完整、致密.在该制备工艺条件下沉积的SiC涂层密度为3.204 g/cm3,显微硬度为HV 4459.2,弹性模量为471GPa,涂层具有优异的光学加工性能,光学加工后表面粗糙度为0.429nm,能满足光学应用的要求.     

Microstructure Characterization of Long W Core SiC Fiber

Microstructure of SiC fiber manufactured by chemical vapor deposition （CVD） onto tungsten （W） wire core was investigated by analytical electron microscopy （AEM）. The results reveal that the fiber consists of W core, SiC sheath and C-coating. SiC sheath could be subdivided into two parts according to whether containing C rich stripe, or not. An emphasis was put on W/SiC interfacial reaction products and the transition zone between sub-layers in SiC sheath. The W/SiC interface consists of three layers of reaction production, namely, W2C, W5Si3 and WC. And there are amounts of facet faults existing in （100） face of WC crystalline and two classes of stack faults in WC have been revealed. The formation essence of different sublayers in SiC sheath was also discussed.