双模方形谐振腔增益均衡器的设计与实现

针对均衡器小型化、高Q值的应用需求,提出并设计了一个工作在Ku波段的双模方形基片集成波导谐振腔均衡器.设计了两个正交的耦合缝隙,在谐振腔中激励起简并模TE₂₀₁和TE₁₀₂;使用金属柱微扰其中一个模式,实现独立调节该模式的谐振频率,并且频率调节自由度高;研究了薄膜电阻的加载位置,实现独立调节两个模式的衰减量和Q值;分析了双模谐振腔级联后谐振频率偏移量及可调性,给出了双模谐振腔均衡器的分析和设计方法.相比于传统单模谐振腔均衡器,该结构均衡器保持了原有的工作性能,并减少了一半数量的谐振腔,使得结构更加紧凑.测试结果与仿真结果吻合,最大误差0.4dB.     

电阻加载的螺旋形谐振器在微带均衡器中的应用

本文给出了一种薄膜电阻加载的矩形螺旋形谐振器,并利用其设计了一种甚小尺寸的微带均衡器子结构电路,对薄膜电阻的加载位置也进行了研究.通过在螺旋形谐振器中引入电阻加载,使得该电路能够进行品质因数调节.分析表明这种电阻加载的螺旋形谐振器不仅能够进行中心频率调节、曲线衰减幅度调节,而且能够对谐振回路的品质因数进行调节,适合在微带均衡器中应用,为微带均衡器的设计提供了一种新的设计途径.     

电阻加载的螺旋型谐振器在微带均衡器中的应用

提出了一种薄膜电阻加载的矩形螺旋型谐振器,并利用其设计了一种甚小尺寸的微带均衡器子结构电路,对薄膜电阻的加载位置也进行了研究.通过在螺旋型谐振器中引入电阻加载,使得该电路能够进行品质因数调节.利用高频结构仿真软件分析表明这种电阻加载的螺旋型谐振器不仅能够进行中心频率调节、曲线衰减幅度调节,而且能够对谐振回路的品质因数进行调节,适合在微带均衡器中应用,为微带均衡器的设计提供了一种新的设计途径.     

电阻加载在宽带均衡器中的应用

给出了1种宽带的功率均衡器的快速设计方法。分析了均衡网络中加载电阻后谐振单元的谐振和耦合特性,并讨论了加载电阻对谐振单元品质因数的影响。对谐振单元的尺寸和电阻进行设定和调整,并使用仿真软件对级联网络进行优化,可以在短时间内设计出满足目标的均衡器。基于本方法,设计了2种频段的宽带功率均衡器。     

Ka波段微带线增益均衡器设计

本文设计出一个匹配良好的Ka波段微带线增益均衡器,驻波比在带内小于1.5。选择薄膜电阻加载的枝节谐振单元作为构成陷波器响应的基本结构。通过大量的仿真和分析,研究了谐振单元中枝节的位置、宽度和长度及薄膜电阻的长度和阻值等参量对衰减曲线的影响。利用三个加载了不同阻值的枝节谐振单元得到了一个Ka波段微带线增益均衡器,给出了结构图及衰减曲线S21和驻波比ρ的曲线。结果表明这种加载薄膜电阻的谐振单元适合Ka波段微带线增益均衡器的设计。     

电阻加载环形谐振器在微带均衡器中的应用

文中提出了一种薄膜电阻加载的微带环形谐振器,并用其设计了一种新型均衡器子机构。研究表明:通过电阻加载的环形谐振器不仅具有中心频率和衰减幅度调节功能,而且能够对电路的品质因数进行调节,为均衡器的设计提供了极大的方便。最后给出了利用这种形环谐振器设计的均衡器的典型曲线。     

薄膜电阻对微带均衡器的影响研究

为了使微带均衡器满足衰减特性与给定的误差曲线逐点拟和的要求,就必须使其频率可调、衰减可调、品质因数可调。因此,本文通过大量仿真和实验,研究了加载了薄膜电阻的微带谐振器及其在微带均衡器中的应用,研究分析了薄膜电阻对微带均衡器传输特性及驻波特性的影响。研究结果表明将薄膜电阻加载到微带谐振器上构造微带均衡器,可以通过改变谐振器的尺寸使其频率可调,通过改变电阻阻值及位置使其衰减可调、品质因数可调。大量HFSS仿真及实验证明这种方式很适合微带均衡器的设计制造。本文利用这种结构设计制作出了一个宽带微带均衡器,得到了很好的实验结果。     

12 GHz枝节匹配宽带微带均衡器

给出了一种匹配良好的宽带微带均衡器的设计。它由在枝节上加载了薄膜电阻的微带枝节谐振器构造而成。通过大量的试验和仿真研究了电阻值对谐振器的影响。当加载薄膜电阻在枝节谐振器上时，可以得到可调的品质因数。利用HFSS分析可以看到电阻加载的枝节谐振器不仅频率可调，而且衰减可调、品质因数可调。文中利用四个加载了不同阻值的枝节谐振器得到了一个12GHz带宽的微带均衡器，给出了结构图和特性曲线。结果表明这种加载电阻的谐振器结构很适合宽带微带均衡器设计。     

X波段宽带低差损功率均衡器的设计与实现

功率均衡器是改善微波系统幅度响应平坦度的一种有效的解决办法。文中研究了电阻加载谐振网络及其在宽带功率均衡器中的应用。利用ADS仿真软件对电阻加载宽带功率均衡器进行联合电磁仿真设计与优化,实现了X波段宽带低差损功率均衡器。均衡器在整个频带内均衡5 dB,输入输出驻波比均小于1.5∶1,最终测试结果与初始设计相吻合,满足了工程需要。结果表明,电阻加载均衡器适用于宽带功率均衡器的研制。     

宽带功率均衡器的匹配电路设计

将宽带匹配理论引入功率均衡器的分析,并基于分析设计了一个6～18GHz均衡器的匹配网络。电阻加载后的谐振枝节特性对均衡器很重要,也正由于该谐振枝节的引入,将引入失匹配,则要对谐振枝和输入输出端口进行匹配。基于对谐振枝节特性、枝节间匹配网络及匹配约束理论的分析,成功设计了一个频段为6～18GHz的微波均衡器。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.