含氦纳米晶钛膜的PBS和XRD研究

为研究不同晶粒尺寸纳米钛膜的储氦行为,在He-Ar混合气体下,用磁控溅射方法沉积纳米晶钛膜,利用PBS(proton backscattering)、XRD(X-ray diffraction)对膜的氦含量和微观结构及晶粒大小进行了研究.结果表明:在其它实验参数不变的情况下,当沉积温度从60℃升至350℃时得到均匀分布的含氦量(指原子百分比)从38.6%逐渐降至9.2%的钛膜,其平均晶粒由13.1 nm增加到44.2 nm;当He/Ar分压比分别为6、10、15、19时得到均匀分布的含氦量分别为17.6%、47.2%、48.3%和38.6%的钛膜.He的引入引起(002)晶面衍射峰向小角度移动,但(100)晶面衍射峰不变,即晶胞参数c增加,a不变化;随膜中He含量的增加,衍射峰展宽,晶粒变小,显示出氦的掺入有抑制纳米晶粒长大的趋势.     

磁控溅射法制备含氦钛膜及膜中氦的热解吸研究

采用He/Ar复合气氛下磁控溅射方法,在Ti、TiZrYAl 和TiMoYAl等3种薄膜中引入浓度(氦-金属比)高达0.19的氦.引入的氦在膜层内沿深度均匀分布,并主要存在于直径为2～5 nm的高压He泡内.热解吸实验表明,在相同He含量下,TiHe膜中He的解吸峰温度与氚化钛中衰变产生的3He的解吸峰温度基本一致.与纯钛相比,合金膜中氦的热解吸谱宽化明显,表明He在合金膜内的捕获形式更为复杂.     

氚钛膜中^3He释放的研究

在极限真空为２×１０＾７Ｐａ的超高真空全金属系统中，用四极质谱计分析了氚钛膜中释放的＾３Ｈｅ气体及其它杂质气体组分。对两块原子比分别为１．６８和１．６９的氚钛膜中释放的＾３Ｈｅ经过长达４１０ｄ的测量。结果表明，当样品中＾３Ｈｅ浓度达到０．１时，＾３Ｈｅ释放系数仍保持为１０＾－５量级。     

纳米晶粒钛膜中氦注入的剂量保持和释放规律

在室温～400℃范围内,用卢瑟福质子背散射技术测量了100keV、注入剂量2 2×1018cm-2的纳米晶粒钛膜中氦的浓度分布、不同温度下的剂量保持及其浓度释放。室温下经210d后,氦在该纳米晶粒钛膜中的剂量保持达68%,其He Ti原子比为52 6%;100℃下氦的保持剂量为室温下的89 6%,此时的He Ti原子比为44%;400℃下的保持剂量为室温下的32 6%,He Ti原子比为17 1%。同时观察到了氦的释放随温度上升呈现波浪式的变化特点。从能量稳定性观点初步探讨了纳米晶粒钛膜有效保持氦的可能机制。     

磁控溅射制备纳米厚度连续金膜

研究了磁控溅射工艺参数对Au膜生长速率、表面粗糙度和微观结构的影响。结果表明:当溅射功率低于200W时,溅射功率对薄膜表面粗糙度、微观结构的影响不明显。标定了溅射功率为20W条件下的Au膜生长速率,观察了Au的生长过程,在Si基底沉积的Au为岛状(Volver-Weber)生长模式,Au膜厚度为8nm时,薄膜开始连续。晶粒尺寸与薄膜厚度的关系研究结果表明:在生长初期,晶粒尺寸随厚度线性增大;随后,晶粒尺寸增速变缓,直至停滞;趋于70nm时,新晶粒形成取代晶粒长大。     

磁控溅射制备金属铀膜

研究了通过磁控溅射方法制备高纯金属铀膜的可行性。采用X射线衍射（XRD）、俄歇电子能谱（AES）、扫描电镜（SEM）、表面轮廓仪分析了沉积在单晶硅或金基材上铀薄膜的微观结构、成分、界面结构及厚度、表面形貌和表面粗糙度。分析结果表明：磁控溅射制备的铀薄膜为纯金属态,氧含量和其它杂质含量均低于俄歇电子能谱仪的探测下限;溅射沉积的铀镀层与铝镀层之间存在界面作用,两者相互扩散并形成合金相,扩散层厚度约为10nm。铀薄膜厚度可达微米级,表面光洁,均方根（RMS）粗糙度优于15nm。     

直流磁控溅射法制备含氦铝膜

采用氦氩混合气氛下直流磁控溅射沉积方法制备含有氦原子的金属铝膜。经碳原子弹性前冲散射分析（C-ERDA），薄膜中氦原子浓度可达约7％，且分布均匀。实验研究了薄膜中的氦含量与溅射真空室气氛中氦的相对含量、基底偏压及沉积温度间的关系。薄膜的X射线衍射分析结果显示：膜中的氦含量变化并未引起明显的峰位移，只是随氦含量增加谱峰宽化。热释放实验证实，氦在薄膜中稳定存在，约500℃以上时方出现氦的释放。     

含氦Ti膜的透射电镜研究

在氦气和氩气混合气氛中用磁控溅射法制备含氦Ti膜。应用透射电镜观察不同氦气和氩气流量比对Ti膜微观结构及氦泡形貌和分布的影响,并研究退火温度对氦泡聚集和长大行为的影响。研究观测到,Ti膜中氦泡的尺寸随氦流量的增加而增大,氦泡的密度随氦流量改变出现一最大值;温度低于0.5 Tm时,He泡以泡迁移和合并机制(MC)长大;温度高于0.5 Tm时,He从小泡离解,被大泡吸收,以OR机制长大,氦泡尺寸明显增加。     

纳米晶钛薄膜的制备及结构分析

采用磁控溅射和离子镀膜工艺在Mo基片上制备了具有不同晶粒尺寸的纯Ti薄膜，并利用X光衍射（XRD）、透射电镜（TEM）和扫描电镜（SEM）分析和观察了两类Ti膜的结构和形貌。实验结果显示：与溅射镀膜相比，离子镀膜的晶粒择优取向程度略低，Ti膜与基片结合较好；较高的基片温度有利于提高膜的致密程度，并降低膜的晶粒择优取向程序。     

溅射功率对磁控溅射制备Bi薄膜结构和性能的影响

采用直流磁控溅射方法在不同功率下制备了铋(Bi)薄膜,对薄膜的沉积速率、表面形貌、生长模式、晶体结构进行了研究,并对其晶粒尺寸和应力的变化规律进行了分析。扫描电镜(SEM)图像显示：薄膜均为柱状生长,平均晶粒尺寸随溅射功率先增大后减小,薄膜的致密度随着功率的增加而降低,在60W时又变得较致密。X射线衍射(XRD)结果表明：Bi薄膜均为多晶斜六方结构,薄膜内应力随功率的增加由张应力变为压应力。     

Cu Films Deposited by Unbalanced Magnetron Sputtering Enhanced by ICP and External Magnetic Field Confinement

Metallic copper（Cu） films were deposited on a Si （100） substrate by unbalanced magnetron sputtering enhanced by radio-frequency plasma and external magnetic field confinement. The morphology and structure of the films were examined by scanning electron microscopy （SEM）, atomic force microscope （AFM） and X-ray diffraction （XRD）. The surface average roughness of the deposited Cu films was characterized by AFM data and resistivity was measured by a four-point probe. The results show that the Cu films deposited with radio-frequency discharge enhanced ionization and external magnetic field confinement have a smooth surface, low surface roughness and low resistivity. The reasons may be that the radio-frequency discharge and external magnetic field enhance the plasma density, which further improves the ion bombardment effect under the same bias voltage conditions. Ion bombardment can obviously influence the growth features and characteristics of the deposited Cu films.     

直流磁控溅射钛及钛合金薄膜的性能研究

用直流磁控溅射的方法在Si及Mo基片上制取Ti及其Ti合金薄膜。研究了基片温度等镀膜工艺参数对薄膜性能的影响,并用XPS、XRD、SEM分析薄膜的化学组成和结构特征,对薄膜的生长模式进行分析。结果表明,合金的加入降低了晶粒尺寸;升高温度可增大薄膜晶粒尺寸,改善薄膜结合能力;合金膜的成分与靶材基本一致。     

Structure and Tribology Property of Carbon Nitride Films Deposited by MW-ECR Plasma Enhanced Unbalanced Magnetron Sputtering

Carbon nitride films were deposited by a twinned microwave electron cyclotron resonance （ECR） plasma source enhanced unbalanced magnetron sputtering system. The results indicate that the structure of the films is sensitive to the nitrogen content. The increase in the nitrogen flow ratio leads to an increase in the sp3 content and an improvement of the tribological properties.     

退火对直流磁控溅射铬膜附着性的影响

为了利用铬膜改善锆的抗腐蚀性，研究了退火对Zr-2基体上制备的直流磁控溅射铬膜附着性的影响，使用扫描电镜（SEM）观察了界面形貌及锆，铬的界面的分布，用X－射线衍射仪（XRD）分析了膜层的组成，用划痕法测定了铬膜的附着，结果表明，锆／铬界面结合良好，边界可见；与现有文献比较，获得的铬膜附着性好――均超过20N；溅射后退火使Zr-Cr界面更像扩散界面，但X－射线衍射结果未发现有界面反应产物；退火提高铬膜与Zr-2基体的附着性约50％，扩散际着附着性增加的主要因素。     

Recent Developments in Magnetron Sputtering

The principle of magnetron sputtering is introduced andthe balanced and unbalanced magnetrons are compared andthe necessity of unbalanced magnetrons is explained as well. Several recent developments in plasma magnetron sputtering, i.e., unbalanced magnetron sputtering, pulsed magnetron sputtering and ion assisted sputtering, are discussed. The recent developments of unbalanced magnetron systems and their incorporation with ion sources result in an understanding in growingimportance of the magnetron sputtering technology, which makes the technology an applicable deposition process for a variety of important films, such as wear-resistant films and decorative films.     

Microstructure and Mechanical Properties of CrN Films Deposited by Inductively Coupled Plasma Enhanced Radio Frequency Magnetron Sputtering

CrN films have been synthesized on Si（100） wafer by inductively coupled plasma （ICP）-enhanced radio frequency （RF） magnetron sputtering. The effects of ICP power on microstructure, crystal orientation, nanohardness and stress of the CrN films have been investigated. With the increase of ICP power, the current density at substrate increases and the films exhibit denser structure, while the DC self-bias of target and the deposition rate of films decrease. The films change from crystal structure to amorphous structure with the increase of ICP power. The measured nanohardness and the compressive stress of films reach the topmost at ICP power of 150 W and 200 W, respectively. The mechanical properties of films show strong dependence on the crystalline structure and the density influenced by the ICP power.