CrO2-Cr2O3 Phase Boundary Under High O2 Pressures

The phase boundary between CrO₂ and Cr₂O₃ was reinvestigated under high O₂ pressures by using a new type of gas compressor. The boundary curve can be represented as log Po₂= 7.16-(3579/ T ). Using the observed data, Δ G °, Δ H °, and Δ S ° for the reaction 2CrO₂⇋Cr₂O₃+½O₂ were calculated to be: Δ G °= -(1.55/100) T +7.60 kcal/mol, Δ H °= -8.19 kcal/mol, and Δ S °= (-15.8/ T )+0.0155 kcal/mol.     

Equilibria of SiF4 with SiO2, Be2SiO4, and BeO in Molten Li2BeF4

Equilibrium partial pressures of SiF₄ were measured for the reactions 2SiO₂( c )+2BeF₂( d )⇋SiF₄( g )+Be₂SiO₄( c ) (log P _siF4(mm) = [8.790 - 7620/ T ] ±0.06(500°–640°C)) and Be₂SiO₄( c ) +2BeF₂( d )⇋SiF₄( g ) +4BeO( c )(log P _siF4(mm) = [9.530–9400/T] ±0.04 (700°–780°C)), wherein BeF₂ was present in solution with LiF as molten Li₂BeF₄. The solubility of SiF₄ was low (∼0.04 mol kg^-1 atm^-1) in the melt. The results for the first equilibrium were combined with available thermochemical data to calculate improved Δ H_f and Δ G_f values for phenacite (–497.57 ±2.2 and –470.22±2.2 kcal, respectively, at 298°K). The few measurements above 700°C for the second equilibrium are consistent with the temperature of the subsolidus decomposition of phenacite to BeO and SiO₂ and with the heat of this decomposition as determined by Holm and Kleppa. Below 700°C, the pressures of SiF₄ generated showed an increasing positive deviation from the expression given for the equilibrium involving Be₂SiO₄ and BeO. This deviation might have been caused by the formation of an unidentified phase below 700°C which replaced the BeO; it more likely resulted from a metastable equilibrium involving BeO and SiO₂.     

The System HfO2-TiO2

The system HfO₂-TiO₂ was studied in the 0 to 50 mol% TiO₂ region using X-ray diffraction and thermal analysis. The monoclinic ( M ) ⇌ tetragonal ( T ) phase transition of HfO₂ was found at 1750°± 20°C. The definite compound HfTiO₄ melts incongruently at 1980°± 10°C, 53 mol% TiO₂. A metatectic at 2300°± 20°C, 35 mol% TiO₂ was observed. The eutectoid decomposition of HfO_2,ss) ( T ) → HfO_2,ss ( M ) + HfTiO_34,ssss occurred at 1570°± 20°C and 22.5 mol% TiO₂. The maximum solubility of TiO₂ in HfO_2,ss,( M ) is 10 mol% at 1570°± 20°C and in HfO_2,ss ( T ) is 30 mol% at 1980°± 10°C. On the HfO₂-rich side and in the 10 to 30 mol% TiO₂ range a second monoclinic phase M of HfO₂( M ) type was observed for samples cooled after a melting or an annealing above 1600°C. The phase relations of the complete phase diagram are given, using the data of Schevchenko et al. for the 50% to 100% TiO₂ region, which are based on thermal analysis techniques.     

Phase Diagrams for the Systems MgCl2-MgF2, CaCl2-MgF2, and NaCl-MgF2

Equilibrium phase diagrams for the systems MgCl₂-MgF₂, CaCl₂-MgF₂ and NaCl-MgF₂ were determined by differential thermal analysis, thermal analysis, and temperature-composition equilibrium techniques. Simple eutectics were observed at 78.0±0.5 mol% MgCl₂ and 628°±2°C in the MgCl₂-MgF₂ system, at 87.5±0.5 mol% CaCl₂ and 694°±2°C in the CaCl₂-MgF₂ system, and at 95.5±0.5 mol% NaCl and 786°±3°C in the NaCl-MgF₂ system. The phase diagrams determined for these systems were compared with phase diagrams that were computed using Temkin's model. The phase diagrams of the CaCl₂-MgF₂ and NaCl-MgF₂ systems were also compared with diagrams that were computed using the expression suggested by Flood et al. for reciprocal systems. The experimentally determined and computed phase diagrams agreed for the MgCl₂-MgF₂ system but not for the CaCl₂-MgF₂ and NaCl-MgF₂ systems.     

Volume and Grain Boundary Diffusion of Hf in Polycrystalline Er2 O3

Hafnium diffusion was measured in polycrystalline Er₂O₃ with two impurity levels. A tracer sectioning technique was used and the diffusion coefficients were measured at 1601° to 1970°C. Volume diffusion of Hf showed both extrinsic and intrinsic behavior, with the transition temperature increasing with the impurity level present in Er₂O₃. The grain boundary diffusion was apparently extrinsic over the entire temperature interval.     

Formation Reaction of ZrO2 Scatterers in ZrF4-Based Fluoride Fibers

This paper clarifies the formation reaction of ZrO₂ crystals which appear as extrinsic scatterers in fluoride fibers. EPMA analysis indicates that BaO exists at grain boundaries of BaF₂ purified by sublimation. BaO reacts with ZrF₄ to form ZrO₂ at 600°C during a glass-melting process. The ZrO₂ formation reaction is influenced by H₂O. Ba(OH)₂, which is formed by the reaction between BaO and water vapor, melts at 370° to 420°C and reacts with ZrF₄ to form ZrO₂ at 450° to 520°C. When low-oxide-content BaF₂ is used for fiber preparation, scatterers significantly decrease.     

The Join Ca2SiO4-CaMgSiO4

New data obtained on the join Ca₂SiO₄-CaMgSiO₄ established a limit of crystalline solubility of Mg in α-Ca₂SiO₄ corresponding to the composition Ca_1.90Mg_0.10SiO₄ at 1575°C. The α-α'Ca₂SiO₄ inversion temperature is lowered from 1447° to 1400°C by Mg substitution in the lattice. α'-Ca₂SiO₄ takes Mg into its lattice up to the composition Ca_1.94Mg_0.06SiO₄ at 1400°C and to Ca_1.96Mg_0.04SiO₄ at 900°C. A new phase (T) reported previously by Gutt, with the approximate composition Ca_1.70Mg_0.30SiO₄, was stable between 979° and 1381°C, and should be stable at liquidus temperatures in multicomponent systems involving CaO–MgO–SiO₂.     

Prominent Nanocrystallization of 25K2O·25Nb2O5·50GeO2 Glass

Some K₂O-Nb₂O₅-GeO₂ glasses are prepared, and their crystallization behaviors are examined. 25K₂O·25Nb₂O₅·50GeO₂ glass with the glass transition temperature T _g= 622°3C and crystallization onset temperature T _x= 668°3C shows a prominent nanocrystallization. The crystalline phase is K_3,8Nb₅Ge₃O_20,4 with an orthorhombic structure. The sizes of crystals in the crystallized glasses heat-treated at 630° and 720°3C for 1 h are °10 and 20–30 nm, respectively, and the crystallized glasses obtained by heat treatments at 620°-850°3C for 1 h maintain good transparency. The density of crystallized glasses increases gradually with increasing heat-treatment temperature, and the volume fraction of crystals in the sample heat-treated at 630°3C for 1 h is estimated to be ∼35%. The usual Vickers hardness and Martens hardness (estimated by nanoindentation) of 25K₂O·25Nb₂O₅·50GeO₂ glass change steeply by heat treatment at T _g, i.e., at around 35% volume fraction of nanocrystals. The present study demonstrates that the composite of nanocrystals and the glassy phase has a strong resistance against deformation during Vickers indenter loading in crystallized glasses.     

Solubility and Crystal Growth of ZnAl2,O4 and AI2O3 in Molten PbF2 Solutions

The solubility of ZnAl₂O₄ (gahnite spinel) and NZOI (corundum) in their respective molten PbF₂ solutions was determined by a sealed-tube quenching method between 900° and 1250°C. Differential thermal analysis was used below 900°C. The solubilities (crystal-constituent/ PbF₂ weight ratio) at 1200°C were 0.151 for A1₂O₃ and 0.108 for ZnAl₂O₄, whereas at 900°C they were 0.093 and 0.048, respectively. These results are compared with those of single-crystal growth experiments and the crystalline products are described.     

Equilibrium Cation Distribution in NiAl2O4, CuAl2O4, and ZnAl2O4 Spinels

Stoichiometric NiAl₂O₄, CuAl₂O₄, and ZnAl₂O₄ spinels were prepared and equilibrated at temperatures from 600° to 1400°C. The parameters u and x , denoting the oxygen position and fraction of divalent cations on tetrahedral sites, respectively, were determined from a detailed X-ray diffraction analysis. In NiAl₂O₄, x increased from 0.07 at 595° to 0.26 at 1391°C; in CuAl₂O₄, x decreased from 0.68 at 613° to 0.64 at 1195°C; and in ZnAl₂O₄, x decreased from 0.96 at 905° to 0.94 at 1197°C. The form of the temperature dependence of x could not be described using theoretically based equations advanced in the literature. A more general equation which allows for a non-distributional contribution to the configurational entropy was derived and observed to properly describe the temperature dependence; the results indicate that short-range order is of definite significance in these intermediate aluminate spinels.     

Phase Relations in the Pseudobinary System Na2TiSi4O11-Na2Ti2Si2O9

The quenching technique was used to study subliquidus and subsolidus phase relations in the pseudobinary system Na₂ Ti₂Si₂ O₁₁-Na₂ Ti₂ Si₂ O₉. Both narsarukite (Na₂TiSi₄O₁₁) and lorenzenite (Na₂Ti₂Si₂O₉) melt incongruently. Narsarsukite melts at 911°±°C to SiO₂+liquid, with the liquidus at 1016°C. Lorenzenite melts at 910°±5°C to Na₂ Ti₆ O₁₃+liquid; Na₂ Ti₆ O₁₃ reacts with liquid to form TiO₂ and is thus consumed by 985°±5°C. The liquidus occurs at 1252°C.     

Electrical Conductivity of TiO2-V2O5-P205 Glasses

The dc conductivities (σ) of V₂O₅-P₂O₅ glasses containing up to 30 mol% TiO₂ were measured at T=100° to ∼10°C below the glass-transition temperature. Dielectric constants from 30 to 10⁶ Hz, densities, and the fraction of reduced V ion were measured at room temperature. The conduction mechanism was considered to be small polaron hopping between V ions, as previously reported for V₂O₅-P₂O₅ glass. The temperature dependence of σ was exponential with σ = σ₀ exp(-W/kT ) in the high-temperature range. When part of the P₂O₅ was replaced by TiO_2,σ increased and W decreased. The hopping energy depended on the reciprocal dielectric constant which, in this case, increased with increasing TiO₂ content.     

Reaction-Bonding Preparation of Si3N4/MoSi2 and Si3N4/WSi2 Composites from Elemental Powders

Si₃N₄/MoSi₂ and Si₃N₄/WSi₂ composites were prepared by reaction-bonding processes using as starting materials powder mixtures of Si-Mo and Si-W, respectively. A presintering step in an At-base atmosphere was used before nitriding for the formation of MoSi₂ and WSi₂; the nitridation in a N₂-base atmosphere was followed after presintering with the total stepwise cycle of 1350°C × 20 h +1400°C × 20 h +1450°C × 2 h. The final phases obtained in the two different composites were Si₃N₄ and MoSi₂ or WSi₂; no free elemental Si and Mo or W were detected by X-ray diffraction.     

Phase Diagram for the SiF4 Join in the System SiO2-Al2O3-SiF4

Alumina reacts with 1 atm of SiF₄ below 660°± 7°C to form A1F₃ and SiO₂. At higher temperatures the product is a mixture of fluorotopaz and AIF₃. Mixtures of fluorotopaz and AIF3 decompose in 1 atm of SiF₄ at 973°± 8°C and form tabular α-alumina. The equilibrium vapor pressure of SiF₄ above mixtures of fluorotopaz and AlF₃ is log p (atm) = 9.198 – 11460/ T (K). Fluorotopaz itself decomposes at 1056°± 5°C in 1 atm of SiF₄ to give acicular mullite, 2Al₂O₃^.1.07SiO₂. Alumina and mullite are stable in the presence of 1 atm of SiF₄ above 973° and 1056°C, respectively. The phase diagram of the system SiO₂-Al₂O₃-SiF₄ shows only gas-solid equilibria.     

Solid-State Diffusive Amorphization in TiO2/ZrO2 Bilayers

Thin films of crystalline TiO₂ were deposited on self-assembled organic monolayers from aqueous TiCl₄ solutions at 80°C; partially crystalline ZrO₂ films were deposited on top of the TiO₂ layers from Zr(SO₄)₂ solutions at 70°C. In the absence of a ZrO₂ film, the TiO₂ films had the anatase structure and underwent grain coarsening on annealing at temperatures up to 800°C; in the absence of a TiO₂ film, the ZrO₂ films crystallized to the tetragonal polymorph at 500°C. However, the TiO₂ and ZrO₂ bilayers underwent solid-state diffusive amorphization at 500°C, and ZrTiO₄ crystallization could be observed only at temperatures of 550°C or higher. This result implies that metastable amorphous ZrTiO₄ is energetically favorable compared to two-phase mixtures of crystalline TiO₂ and ZrO₂, but that crystallization of ZrTiO₄ involves a high activation barrier.     

Fluoride Model Systems: IV, The Systems LiF-BeF2 and PbF2-BeF2

Additional information on phase equilibria in the subsolidus region of the system LiF-BeF₂ was obtained and a study was made of the system PbF₂–BeF₂. In the system LiF-BeF₂ the compound LiBeF₃ occurs; it decomposes below the solidus at 300° C. to yield Li₂BeF₄ and the quartz form of BeF₂. An additional subsolidus compound having the probable composition LiBe₂F₅ forms below 275°C. No evidence was found for the existence of the alleged compound LiBe₂F₅. In the system PbF₂-BeF₂ two compounds occur: 3PbF₂.BeF₂ and PbF₂-BeF₂; the former melts congruently at 482°± 5°C. and the latter at 585°± 5°C. Extensive solid solution exists between PbF₂.BeF₂ and BeF₂. The cristobalite form of BeF₂ crystallizes from glasses of high BeF₂ content at temperatures of 450°C. or lower but is converted to the quartz form by heating at higher temperatures or in the presence of liquid.     

Phase Relations and Ordering in the Systems MgO-Y2O3-ZrO2 and CaO-MgO-ZrO2

The phase relations in the systems MgO-Y₂O₃-ZrO₂ and CaO-MgO-ZrO₂ were established at 1220° and 1420°C. The system MgO-Y₂O₃-ZrO₂ possesses a much-larger cubic ZrO₂ solid solution phase field than the system CaO-MgO-ZrO₂ at both temperatures. The ordered δ phase (Zr₃Y₄O₁₂) was found to be stable in the system ZrO₂-Y₂O₃ at 1220°C. Two ordered phases φ₁ (CaZr₄O₉) and φ₂ (Ca₆Zr₁₉O₄₄) were stable at 1220°C in the system ZrO₂-CaO. At 1420°C no ordered phase appears in either system, in agreement with the previously determined temperature limits of the stability for the δ, φ₁, and φ₂ phases. The existence of the compound Mg₃Y_zO₆ could not be confirmed.     

High-Temperature Behavior of MoSi2 and Mo5Si3

The high-temperature stability and behavior of MoSi₂ was studied by heating dense sintered specimens under a vacuum of 10⁻⁵ mm Hg in the temperature range 1700° to 2000°C. The resulting material was examined using physical measurements, X-ray analysis, and metallographic techniques. The decomposition of MoSi₂ into Mo₅Si₃ is described. The Mo₅Si₃-MoSi₂ eutectic temperature was determined as 1900° C, and the melting points of MoSi₅ and Mo₅Si₃ were determined as 1980° and 2085° C, respectively.     

Thermal Diffusivity of Be4B, Be2B, and BeB6

The thermal diffusivities of polycrystalline Be₄B, Be₂B, and BeB₆ were measured by the flash method. Generally, the thermal diffusivities at a given temperature decrease with increasing boron content. The thermal diffusivities of Be₄B, Be₂B, and BeB₆ varied from 0.13 to 0.072 to 0.031 cm²/s, respectively, at 200°C and from 0.068 to 0.038 to 0.007 cm²/s at 1000°C. Heat transport in BeB₆ is expected to occur almost entirely by phonon conduction, whereas electronic conduction probably plays a major role in Be₄B and Be₂B. Analytical expressions for the thermal diffusivities (α) of Be₄B and Be₂B at 200° to 1000°C and of BeB₆ at 25° to 1500°C are: α(Be₄B)=1/(5.83+9.05×10 3 T ), α(Be₂B)=1/(10.92+1.40×10 2 T ), and α(BeB₆)=5.60×10 4+5.72/ T +77.3/T²-4.09×10⁴/T³ cm²/s.     

The Influence of Sb2O3 Addition on the Properties of Low-melting ZnO–P2O5 Glasses

The influence of 0–16 mol% Sb₂O₃ substitution for P₂O₅ on the properties of ZnO–P₂O₅ glasses has been investigated. It was shown that Sb₂O₃ could participate in the glass network and thermal stability of the glasses decreased with increasing Sb₂O₃ content. Glass transition temperature T _g, softening temperature T _s, and water durability all decreased firstly (up to 6 mol% Sb₂O₃ added) and then increased. Substitution of 12 mol% Sb₂O₃ led to a 16°C decrease in T _g and 30°C decrease in T _s, and weight loss of the glass was only 0.42 mg/cm², which is ∼11 times lower than that of the glass without Sb₂O₃ after immersion in deionized water at 90°C for 1 day. The glass containing 12 mol% Sb₂O₃ might be a substitute for Pb-based glasses in some applications.