共查询到19条相似文献,搜索用时 164 毫秒
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采用硅基应变片设计了一种可用于精密微装配作业过程,检测x、y、z方向微接触力的三维微力传感器;经微小改动后,该传感器可成为五维微力传感器。分析了力传感器测量原理,建立其测量模型,并设计了传感器信号放大电路。测试了微力传感器的性能指标,在x、y、z3个方向的微力测量分辨率为0.001 N,测量精度可达0.005 N,测量范围为-0.5~ 0.5 N。最后设计了微装配作业控制系统,并利用该传感器实现力位移混合控制,顺利完成了180μm微型轴与200μm微型孔间的精密微装配实验研究。 相似文献
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用于微摩擦测试的微力传感器及其制作 总被引:5,自引:1,他引:4
微构件表面的摩擦状况和磨损机理与宏观构件有较大的区别,需一种能够测量微米尺度样品摩擦特性的专用仪器。给出了一种新型硅微力传感器的设计原理、结构、制作工艺及其弱信号采集方法。静态性能测试结果表明,传感器最大输出电压2000μV,重复性约为1.3%,灵敏度约为65V/N,分辨率为46μN,总精度为2.3%,基本上满足了微摩擦测试的需要。实验及计算表明,通过优化微力传感器的结构,改进芯片的封装,可以大大减少其体积,并提高其各项性能指标。 相似文献
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提出了一种面向微惯性测量单元(Micro-IMU)应用的微电子机械系统(MEMS)三维可折叠结构,其主要组成部分包括绝缘层上硅(SOI)基底、聚酰亚胺柔性链、金属线以及MEMS多环陀螺仪。文章基于有限元仿真技术,分析了可折叠结构及器件的可行性。基于SOI一体化MEMS技术,将核心传感器的制作工艺与折叠结构工艺相结合,在结构中搭载单轴圆盘多环谐振微陀螺,利用柔性铰链实现结构的三维折叠以及各个传感器之间的电互连,实现单轴惯性传感器的集成,制备出体积为1cm3、质量为250mg的搭载多环谐振微陀螺的三维可折叠系统。 相似文献
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MEMS加速度传感器的原理及分析 总被引:15,自引:2,他引:15
主要介绍了五种目前常见的基于MEMS技术的加速度传感器,从物理结构的角度对这几种传感器的测量原理进行了分析,不但着重介绍了已经较为成熟且形成产业化的硅微电容式、压阻式、热电耦式加速度传感器,而且对目前较为前沿的光波导式加速度传感器也进行了一些分析和介绍。 相似文献
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硅微加速度传感器是MEMS器件中的一个重要分支,具有十分广阔的应用前景。由于硅微加速度传感器具有响应快、灵敏度高、精度高、易于小型化等优点,而且该种传感器在强辐射作用下能正常工作,因而在近年来发展迅速。文章首先对传感器结构及工作原理进行了简单介绍,给出了一种基于MEMS技术制作的压阻式硅微加速度传感器的结构和工艺,并对制作的加速度传感器样品进行了动态测试,测试结果表明与理论设计值基本吻合。 相似文献
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In the present work, we report fabrication and characterization of a low-cost MEMS based piezoresistive micro-force sensor with SU-8 tip using laboratory made silicon-on-insulator (SOI) substrate. To prepare SOI wafer, silicon film (0.8 µm thick) was deposited on an oxidized silicon wafer using RF magnetron sputtering technique. The films were deposited in argon (Ar) ambient without external substrate heating. The material characteristics of the sputtered deposited silicon film and silicon film annealed at different temperatures (400–1050 °C) were studied using atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. The residual stress of the films was measured as a function of annealing temperature. The stress of the as-deposited films was observed to be compressive and annealing the film above 1050 °C resulted in a tensile stress. The stress of the film decreased gradually with increase in annealing temperature. The fabricated cantilevers were 130 μm in length, 40 μm wide and 1.0 μm thick. A series of force–displacement curves were obtained using fabricated microcantilever with commercial AFM setup and the data were analyzed to get the spring constant and the sensitivity of the fabricated microcantilever. The measured spring constant and sensitivity of the sensor was 0.1488 N/m and 2.7 mV/N. The microcantilever force sensor was integrated with an electronic module that detects the change in resistance of the sensor with respect to the applied force and displays it on the computer screen. 相似文献
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A MEMS piezoresistive magnetic field sensor based on a silicon bridge structure has been simulated and tested.The sensor consists of a silicon sensitivity diaphragm embedded with a piezoresistive Wheatstone bridge,and a ferromagnetic magnet adhered to the sensitivity diaphragm.When the sensor is subjected to an external magnetic field, the magnetic force bends the silicon sensitivity diaphragm,producing stress and resistors change of the Wheatstone bridge and the output voltage of the sensor.Good agreeme... 相似文献
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为了满足湍流探测高灵敏度、高分辨率的要求,提出了一种新型纤毛微电子机械系统(MEMS)湍流传感器。基于MEMS技术制作了硅十字梁敏感受力结构,通过橡胶探头的受力振动传递水中的湍流信号,凭借传感器头部的导流罩来保证传感器的高分辨率探测。对MEMS湍流传感器进行理论和仿真分析,其一阶共振频率达到481.04 Hz。经过海洋环境模拟机测试实验,结果显示其在50 MPa压力下保持了完好的结构和良好的性能,验证了其水下的可靠性。在湍流实验平台进行测试,通过比较标定法得出其灵敏度为1.92×10^-4 V·m·s^2/kg,满足海洋湍流测试要求。 相似文献
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为了研究热电式MEMS微波功率传感器封装后的性能,提出了一种COB技术的封装方案。首先,采用有限元仿真软件HFSS仿真封装前后的微波特性;然后,基于GaAs MMIC技术对热电式MEMS微波功率传感器进行制备,并对制备好的芯片进行封装。最后,对封装前后传感器的微波特性及输出特性进行测试。实验结果表明,在8~12 GHz频率范围内,封装后回波损耗小于-10.50 dB,封装前的灵敏度为0.16 mV/mW@10 GHz,封装后的灵敏度为0.18 mV/mW@10 GHz。封装后的热电式微波功率传感器输出电压与输入功率仍有良好的线性度。该项研究对热电式MEMS微波功率传感器封装的研究具有一定的参考价值和指导意义。 相似文献
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增大传感器振子的质量和静态测试电容可以减小电容式MEMS惯性传感系统的噪声,而深度粒子反应刻蚀工艺由于复杂的工艺原因,当深宽比较大时,不能刻蚀出大质量和大初始电容的传感器.据此,本文研究了一种磁驱动增大检测电容的MEMS惯性传感器,通过电磁驱动器,传感器的静态测试电容可以大幅增加,在梳齿电容上刻蚀阻尼槽后,其机械噪声达到0.61μg每根号赫兹,仿真其共振频率为598Hz,静态位移灵敏度为0.7μm每重力加速度,基于硅 玻璃键合工艺,制作了栅形条电容式惯性传感器,并用电磁驱动的方式测试其品质因子达到715,从而验证了制作工艺的可行性和电磁驱动器改变传感器初始静态测试电容的可行性. 相似文献
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Based on the asymmetric base region transistor, a pressure sensor with temperature compensation circuit is proposed in this paper. The pressure sensitive structure of the proposed sensor is constructed by a C-type silicon cup and a Wheatstone bridge with four piezoresistors (R1, R2, R3 and R4) locating on the edge of a square silicon membrane. The chip was designed and fabricated on a silicon on insulator (SOI) wafer by micro electromechanical system (MEMS) technology and bipolar transistor process. When the supply voltage is 5.0 V, the corresponding temperature coefficient of the sensitivity (TCS) for the sensor before and after temperature compensation are -1862 and -1067 ppm/℃, respectively. Through varying the ratio of the base region resistances r1 and r2, the TCS for the sensor with the compensation circuit is -127 ppm/℃. It is possible to use this compensation circuit to improve the temperature characteristics of the pressure sensor. 相似文献
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A differential temperature sensor for on-chip signal and DC power monitoring is presented for built-in testing and calibration applications. The amplifiers in the sensor are designed with class AB output stages to extend the dynamic range of the temperature/power measurements. Two high-gain amplification stages are used to achieve high sensitivity to temperature differences at points close to devices under test. Designed in 0.18 μm CMOS technology, the sensor has a simulated sensitivity that is tunable up to 210 mV/°C with a corresponding dynamic range of 13 °C. The sensor consumes 2.23 mW from a 1.8 V supply. A low-power version of the sensor was designed that consumes 1.125 mW from a 1.8 V supply, which has a peak sensitivity of 185.7 mV/°C over a 8 °C dynamic range. 相似文献