非晶硅薄膜晶体管室温红外探测器的优化设计

介绍了基于非晶硅薄膜晶体管的室温红外探测器的基本特征及性能指标,对晶体管宽长比对探测器性能的影响进行了理论分析,分析表明,提高晶体管的宽长比可以改善探测器的探测率。为了克服传统微桥结构室温红外探测器成品率低的不足,提出了一种新的热绝缘材料,并将该材料应用到了非制冷红外探测器中,实际制备了探测器单元,对该材料的热绝缘能力进行了验证。     

非晶硅薄膜晶体管室温红外探测器的优化设计

介绍了基于非晶硅薄膜晶体管的室温红外探测器的基本特征及性能指标,对晶体管宽长比对探测器性能的影响进行了理论分析,分析表明,提高晶体管的宽长比可以改善探测器的探测率.为了克服传统微桥结构室温红外探测器成品率低的不足,提出了一种新的热绝缘材料,并将该材料应用到了非制冷红外探测器中,实际制备了探测器单元,对该材料的热绝缘能力进行了验证.     

用于室温红外探测的新型非晶硅薄膜晶体管

研究了用于室温红外探测的非晶硅薄膜晶体管。分别从理论和实验角度对非晶硅薄膜晶体管的沟道电流随着宽长比的线性变化进行了分析验证。理论分析和实验结果表明,增大晶体管的宽长比不会影响沟道电流温度系数,但可以显著改善探测器的探测率,从而为a2SiTFT红外探测器的优化设计指明了方向。     

非晶YBCO薄膜热释电红外探测器

介绍了非晶YBCO薄膜用作非制冷热释电红外探测器材料。它在室温下显示出强的热释电行为,并且容易在室温下采用射频磁控溅射法沉积,制备工艺与CMOS工艺相兼容,是 一种很有潜力的热释电探测器材料。并介绍了非晶YBCO热释电薄膜的研究现状,阐述了该薄膜及其探测器的制备技术和研究动向。     

基于导电聚合物的非制冷辐射热探测技术研究

非制冷辐射热探测技术的发展使在室温下进行红外探测成为可能,目前的热探测一般采用无机材料.探讨了导电聚合物聚乙烯二氧噻吩:聚对苯乙烯磺酸(PEDOT:PSS)作为非制冷辐射热探测器敏感材料的可行性,研究了其热敏特性和红外吸收特性,制备了PEDOT:PSS自支撑悬空微桥单元,并进行了初步测试,在室温下,预计该热探测器响应时间约为12ms,探测度D*可达3×1010cm·Hz1/2·W-1,在响应时间与无机材料热探测器相当的情况下,探测度高一个量级以上.     

非制冷型热释电薄膜红外探测器的制备及应用

介绍了室温非制冷型热释电薄膜红外探测器的原理和优势。从热释电材料的选择及器件的结构设计等方面阐述了热释电薄膜红外探测器的制备技术和研究动向,并归纳了器件的主要应用领域。     

非致冷红外焦平面阵列研究进展

主要介绍了在室温下工作的红外焦平面的研究进展，非致冷红外焦平面阵列的研制主要分两大类，即热释电焦平面阵列以是辐射热红外焦平面阵列，文中较为详细地介绍这两种探测器的材料及结构，并给出国外对这两咎探测器结构研究的最新发展趋势。     

非致冷红外焦平面阵列研究进展

主要介绍了在室温下工作的红外焦平面的研究进展。非致冷红外焦平面阵列的研制主要分为两大类，即热释电焦平面阵列以及测辐射热红外焦平面阵列。文中较为详细地介绍这两种探测器的材料及结构，并给出国外对这两种探测器结构研究的最新发展趋势     

铟砷锑红外探测器的研究进展

InAs_1－xSb_x属于Ⅲ-Ⅴ族化合物半导体合金材料，随Sb组分含量的不同，室温下可覆盖3~12 μm波长，并且InAsSb材料具有载流子寿命长、吸收系数大、载流子迁移率高等优点，是一种具有广阔应用前景的红外光电材料。探测器可以在150 K甚至近室温下工作，具有较高的灵敏度和探测率，是低功耗、小型化、高灵敏度和快响应中长波红外探测系统的良好选择，InAsSb中长波红外探测器受到广泛的关注和研究。本文首先简要概述了InAsSb材料的基本性质。其次，对国内外InAsSb红外探测器发展状况进行了介绍。最后，对InAsSb红外探测技术的发展进行了总结与展望。     

室温红外探测器研究与进展

简要概述了室温红外探测器技术的最新研究现状,首先根据工作机理的不同对红外探测器进行了分类,详细阐述了室温红外探测器的优点所在;接着在给出了室温红外探测器典型结构的基础上,对这些典型结构进行了比较和讨论;给出了最近出现的几种新型探测器,介绍了其工作原理、制作工艺和主要性能指标;最后对室温红外探测器的发展方向进行了预测。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.