Studies of the temperature coefficient of capacitance (TCC) of a new electroceramic composite: Pb(Fe0.5Nb0.5)O3 (PFN)–Cr0.75Fe1.25O3(CRFO)

In this paper we did a study of the dielectric properties: capacitance (C), dielectric permittivity(ε), electric modulus(M) and dielectric loss(tangα)) in the radio-frequency(RF) and microwave (MW) frequency range as a function of temperature and the temperature coefficient of capacitance (TCC) of the composites [Pb(Fe_1/2Nb_1/2)O₃(PFN)]_Z–[Cr_YFe_2−YO₃(CRFO)]_100−Z where Z = 0, 10, 50, 90 and 100%. The compounds were prepared by the powder-sintering and the X-ray diffraction (XRD) was used in this study using the Rietveld procedure. The X-ray analysis shows that PFN phase is tetragonal where the CRFO phase belongs to a trigonal structure. The capacitance, dielectric permittivity, electric modulus and loss were studied in the frequency range of 100 Hz to 1GHz and temperature range of 25–100 °C. The values of TCC for all the samples are presenting positive values. The study of the electric modulus (M) as a function of frequency and temperature lead to the measurement of the activation energy (E_ac), which is directed linked to the relaxation process associated to the interfacial polarization effect in the samples. The study of the electrical properties in the RF and MW range of frequencies is important in view of possible applications of these composites as future components in RF and MW circuits.     

单壁碳纳米管作沟道的场效应晶体管输运特性理论研究

为研究以单壁碳纳米管(CNT)作沟道的场效应晶体管(FET)的输运特性,采用非平衡格林函数(NEGF)理论,构建了CNTFET的电子输运模型,该方法摒弃粗糙的连续体模型,可实现CNTFET输运性质与手性指数的直接对接。以(17,0)锯齿型管为例,数值计算了CNTFET输出特性、转移特性、跨导、亚阈值摆幅、开关态电流比等电学特性;在等效栅氧化层厚度相同的情况下,对比了采用不同栅介质材料时上述电学特性在数值上的差异,发现随栅介质介电常数的增加,漏感应势垒降低效应变得显著,这不但导致开态时从源注入到漏的电子浓度增加、电流增大,也导致关态电流增大,开关态的电流比减少。研究还发现在通常的栅源和漏源电压下,沟道中出现热电子。     

A novel carbon nanotubefet based bulk built-in current sensor for single event upset detection

The continuous scaling down of circuits has resulted in the development of carbon nanotubes (CNT) which provides a better alternative of silicon. High device packing densities is one of the advantageous factors of CNTFET compared to CMOS technology. This paper describes the new bulk current based built-in current sensor (BBICS) for the detection of single event upset (SEU) in CNTFET SRAM with less number of transistors compared to previous designs. The advantage of it is that its ability to detect low ranges of micro-current. The complete circuit, both SRAM and Sensor are built with CNTFET. This also possesses the advantage of being used in the detection of negative current pulses with the addition of an inverter circuit. This circuit operates best for two different technology nodes. This built-in current sensor is connected to the bulk terminal of the CNTFET SRAM. PVT analysis and power dissipation analysis were done for the proposed circuit.     

单壁碳纳米管束的排布

流体排布法是实现碳纳米管定向排列的一种简单的方法。采用流体排布法在具有浸润性图案化的基底上成功地对单壁碳纳米管(SWNTs)束进行了水平方向上的排布。将SWNTs悬浮液滴入光刻胶制成的微通道中,在流体剪切力作用下,弯曲的SWNTs在一定程度上会被拉伸并且平行地排列在纳米级宽度的微通道中。将排列好的SWNTs阵列转移到一些不同间距的金电极对上面,制作成碳纳米管场效应晶体管(CNTFET)。CNTFET的电性能测试结果表明,制备的SWNTs束可以制造出不同电极间距同时具有良好电性能的CNTFET。     

Application of RF varactor using Ba(x)Sr(1-x)TiO3/TiO2/HR-Si substrate for reconfigurable radio

In this paper, the potential feasibility of integrating Ba_xSr_1-xTiO₃ (BST) films into Si wafer by adopting tunable interdigital capacitor (IDC) with TiO₂ thin film buffer layer and a RF tunable active bandpass filter (BPF) using BST based capacitor are proposed. TiO₂ as a buffer layer is grown onto Si substrate by atomic layer deposition (ALD) and the interdigital capacitor on BST(500 nm)/TiO₂(50 nm)/HR-Si is fabricated. BST interdigital tunable capacitor integrated on HR-Si substrate with high tunability and low loss tangent are characterized for their microwave performances. BST/TiO₂/HR-Si IDC shows much enhanced tunability values of 40% and commutation quality factor (CQF) of 56.71. A resonator consists of an active capacitance circuit together with a BST varactor. The active capacitor is made of a field effect transistor (FET) that exhibits negative resistance as well as capacitance. The measured second order active BPF shows bandwidth of 110 MHz, insertion loss of about 1 dB at the 1.81 GHz center frequency and tuning frequency of 230 MHz (1.81-2.04 GHz).     

DC and AC characteristics of sub-50-nm MOSFETs with source/drain-to-gate nonoverlapped structure

A MOSFET structure with a nonoverlapped source/drain (S/D) to gate region was proposed to overcome the challenges in sub-50-nm CMOS devices. Key device characteristics were investigated by extensive simulation study. Fringing gate electric field through the spacer induces an inversion layer in the nonoverlap region to act as an extended S/D region. An oxide spacer is used to reduce parasitic gate overlap capacitance. A reasonable amount of inversion electrons were induced under the spacers. Internal physics, speed characteristics, short channel effects, and RF characteristics were studied with the nonoverlap distance at a fixed metallurgical channel length of 40 nm. The proposed structure had good drain-induced barrier lowering and V/sub T/ rolloff characteristics and showed reasonable intrinsic gate delay and cutoff frequency compared to those of an overlapped structure.     

微小电容测量仪500fF/1MHz溯源方法研究

fF量级高频微小电容测量在军工电子产品领域有着重要作用,针对微小电容测量仪500fF/1MHz点无法溯源的现状,研制了惰性气体封装的500fF高频标准电容器作为传递标准。建立高频小电容测量模型,基于“反算法”估算出500fF高频标准电容器分布参数,称作“理论推导”溯源方案,不确定度优于0.15%;利用3台同等量级的高频微小电容测量传递标准,称作“计量比对”溯源方案,不确定度优于0.07%。利用以上2种方案对同1台仪器开展溯源,实验数据结果基本一致,能够满足用户使用要求,为更低容值、更高频率的微小电容的溯源提供了可参考的路径。     

High Precision SAR ADC Using CNTFET for Internet of Things

A high precision 10-bit successive approximation register analog to digital converter (ADC) designed and implemented in 32nm CNTFET process technology at the supply of 0.6V, with 73.24 dB SNDR at a sampling rate of 640 MS/s with the average power consumption of 120.2 μW for the Internet of things node. The key components in CNTFET SAR ADCs are binary scaled charge redistribution digital to analog converter using MOS capacitors, CNTFET based dynamic latch comparator and simple SAR digital code error correction logic. These techniques are used to increase the sampling rate and precision while ensuring the linearity, power consumption and noise level are within the limit. The proposed architecture has high scalability to CNTFET technology and also has higher energy efficiency. We compared the results of CNTFET based SAR ADC with other known architectures and confirm that this proposed SAR ADC can provide higher precision, power efficiency to the Internet of things node.     

多壁碳纳米管湿度传感器频率特性(英文)

为了研究测试频率对传感器性能的影响,改善多壁碳纳米管(multi-walled carbon nanotubes,MWCNTs)湿度传感器检测方法并提高传感器检测精度,对传感器频率特性进行了分析.在玻璃衬底上利用蒸镀和光刻技术制作了叉指电极,在电极表面涂敷了MWCNTs-SiO2敏感薄膜,最后通过烧结完成传感器制作.利用饱和盐溶液法产生相应湿度值,并使用RCL自动测试仪对传感器进行测试,测试频率选择在1 kHz到500 kHz之间.对传感器频率特性进行了实验与理论分析,结果表明,该传感器电容值对环境湿度敏感,并且其敏感特性受传感器检测频率的影响.使用毛细凝聚理论以及电解质物理理论对上述实验现象进行了合理的解释.传感器静态电容以及对湿度的灵敏度均随着测试频率的增加明显降低,测试频率为500 kHz时传感器灵敏度仅为测试频率1 kHz时的0.24倍.     

Characterization of Capacitance Standards at High Frequency at National Physical Laboratory,India

Four-terminal-pair air dielectric capacitance standards with nominal values of 1000 and 100 pF have been characterized up-to 10 MHz at NPLI. The procedure employed involves the determination of all capacitive and inductive parameters of the simple electrical-equivalent-circuit-model of these capacitance standards. The effective capacitance of each standard has also been computed as a function of frequency from 1 kHz to 10 MHz. The capacitive parameters have been measured at 1 kHz while inductive parameters have been estimated up to 10 MHz using linear regression analysis by employing least-squares-approximation method. The paper highlights the computation procedure of impedance terms which further requires the determination of various capacitive and inductive terms involved in the calculation of effective capacitance. The method employed for the estimation of inductive parameters as a function of frequency is also discussed in detail. The present work will help in the establishment of metrological traceability of capacitance standards at high-frequency at NPLI which will be further used to establish calibration facility for LCR meters and RF impedance analyzers for capacitance parameter up-to 10 MHz.     

基于Silvaco的RFSOICMOS工艺仿真

近年来,随着便携式系统和无线通讯系统的迅速发展,电子产品的消费已经转移到射频领域。这为SOI技术的应用开辟了广阔的前景：一方面,由于射频领域的便携式系统和无线通讯系统多数是使用电池作为能源的,因此降低系统功耗和驱动电压就成为需要解决的首要问题。在这方面,SOIcMOS技术由于寄生电容小而成为解决功耗问题的一项关键技术。另一方面,射频领域的发展要求集成水平和工作频率提高,藕合噪声问题变得更加关键。采用全氧隔离的SOICMOS技术实现了器件和基片之间的完全隔离,显著降低了高频RF和数字、混合信号器件之间的串扰现象,从而使藕合噪声问题得到很大改善。文章详细介绍了0．5umSOICMOS的工艺流程,并利用silvaco软件对工艺进行仿真。     

Evaluation of a Capacitance Scaling System

An improved error analysis of an existing capacitance scaling system for supporting measurements of higher valued (10 nF to 100 ) ceramic-dielectric four-terminal-pair (4TP) capacitance standards over the 100-Hz to 100-kHz frequency range is described. The capacitance scaling system uses a commercial impedance (inductance-capacitance-resistance) meter and a single-decade inductive voltage divider as an impedance comparator. Four-terminal-pair capacitors in decade (10 : 1) steps from 10 nF to 100 F are measured. The system's 10 : 1 scaling error is determined using 100-pF and 1-nF air-dielectric 4TP capacitance standards with known capacitance and loss characteristics over frequency. This paper discusses the significant reductions in measurement uncertainty that were attained through the use of improved calibration standards and measurement method refinements. Details of the uncertainty analysis for a 10-nF capacitor (in the 100-Hz to 10-kHz frequency range) and verification data are presented.     

Growth properties of AlN films on sapphire substrates by reactive sputtering

Aluminum nitride (AlN) films were grown on sapphire substrates by radio frequency (RF) magnetron sputtering in plasma containing a mixture of argon and nitrogen, using a pure aluminum target. The effect of RF power was investigated with respect to growth rate, surface roughness, and transmittance of AlN films. As the RF power increases, the growth rate increases and the root mean square of surface roughness decreases while the absorption edge shifts to longer wavelength. This shift is believed to be due to the defects induced by ion bombardment.     

射频功率对氧化铬薄膜的力学性能和耐磨损性能的影响

利用射频反应磁控溅射法在45钢基体上制备了氧化铬薄膜.采用XRD测试了薄膜的晶体结构,用Tribo-Indentor纳米力学测试系统得到了薄膜的硬度及微观形貌,在UMT显微力学测试仪上测试了薄膜的耐磨损性能,在此基础上讨论了铬靶溅射功率对薄膜的力学性能和耐磨损性能的影响.结果表明:在射频功率较低的情况下薄膜为Cr2O3结构.随着射频功率的提高,薄膜表面的大颗粒物质增多,硬度下降.射频功率增大时,磨损体积增加,薄膜的耐磨损性能下降.     

An optimal RF shielding method for MR‐PET fusion system with insertable PET

An RF shielding method is proposed to preserve the resonance frequency of an RF coil regardless of the existence of a positron emission tomography (PET) detector module, so that the RF coil can effectively operate for both simultaneous MR‐PET imaging and MR stand‐alone imaging. The RF shield between the RF coil and the PET detector module was manufactured in the form of a hollow acryl cylinder wrapped with gold‐taffeta woven tape. As we adopted a double‐layer RF shield between the RF coil and the PET detector module, it was possible to maintain the resonance frequency of the RF coil and the MR image quality was similar in both cases, with and without the insertable PET detector module. Using the insertable concept of the PET system and the RF coil with an additional double‐layer RF shield, both an MR‐PET fusion system and an MR stand‐alone system were realized. © 2014 Wiley Periodicals, Inc. Int J Imaging Syst Technol, 24, 263–269, 2014     

射频磁控溅射制备SiO_2膜

利用石英靶射频磁控溅射制备SiO2膜的工艺，采用L型阻抗匹配网络，并计算得到了等离子体的等效电容及等效电导。指出射频功率密度是最重要的沉积参数，靶面自偏压及SiO2膜沉积速率均随功率密度的增加而线性增加。溅射气压及氧分压对自偏压的影响较小，但两者的增加将导致SiO2沉积速率的降低。制备了可见光区透光性良好，折射率为1．46，沉积速率为35nm／min的SiO2膜。     

Capacitance distribution of Ni-Nb-Zr-H glassy alloys

Capacitance distribution of {(Ni(0.6)Nb(0.4)(1-x)Zrx}(100-y)-Hy (x = 0.30, 0.35, 0.40, 0.45 and 0.50, 0 < or = y < or = 20) glassy alloy ribbons was carried out by ac impedance analysis at frequency of 1 kHz, in terms of a distributed constant equivalent circuit. The capacitance can be represented by oblique contour lines. The highest capacitance (1-11 microF) could be found near the point when x = 0.40, y = 10, which is a composition occurring room-temperature Coulomb oscillation, while capacitance of the composition (x = 0.35, y = 4) occurring ballistic transport was around 0.8 microF. The capacitance difference would be explained by an effect of hydrogen localization derived from morphology of distorted Zr-centered icosahedral Zr5Ni5Nb3 clusters and ideal Ni-centered clusters. The electrocapillarity equation showed that the specific capacitance between two electrodes increases parabolic with decreasing the distance, as a polarized glutinous liquid.     

An RF circuit model for carbon nanotubes

We develop an RF circuit model for single walled carbon nanotubes for both dc and capacitively contacted geometries. By modeling the nanotube as a nanotransmission line with distributed kinetic and magnetic inductance as well as distributed quantum and electrostatic capacitance, we calculate the complex, frequency dependent impedance for a variety of measurement geometries. Exciting voltage waves on the nanotransmission line is equivalent to directly exciting the yet-to-be observed one dimensional plasmons, the low energy excitation of a Luttinger liquid.     

射频等离子体球化Ti粉体的研究

本文采用射频（RF）等离子法对颗粒形状不规则的Ti粉进行球化处理。研究了加料速率、物料分散方式、Ti粉颗粒大小等因素对球化率的影响。利用扫描电子显微镜（SEM）观察相应试样的形貌。结果显示,射频等离子体法是制备具有良好流动性的球形钛粉的有效技术。     

气液两相低温流体空泡率测量技术及其进展

对目前几种用于测量低温气液两相流空泡率方法的基本原理、传感器结构及国内外研究情况进行了综述,包括辐射法(射线吸收法)、微波法、射频法、电容法,分析了4种方法的优缺点,在比较4种方法的基础上,提出了目前采用电容传感器测量气液两相低温液体空泡率的优势及设计准则.