不同结构镍纳米线阵列的制备及其磁性

采用直流电沉积在多孔有序氧化铝模板中制备了不同结构的有序镍纳米线阵列。采用SEM和TEM对所制备的镍纳米线的形貌和结构进行了表征。研究了镍纳米线不同结构对镍纳米线阵列磁性性能的影响规律．当电沉积电压为2．5V时制备的镍纳米线为多晶结构；电沉积电压4V时，镍纳米线为沿[220]择优取向的单晶结构；电沉积电压＞5V时，择优取向由[220]转为[111]方向．磁滞回线结果表明，单晶镍纳米线阵列与多晶纳米线阵列相比具有更高的矩形度，沿[111]择优取向的单晶纳米线相比沿[220]取向的单晶镍纳米线具有更大的矩形度，表现出显著的磁各向异性。     

铁纳米线阵列的制备及磁性质

使用电化学沉积方法，在有序的氧化铝模板（AAO）孔洞中制备了铁纳米线有序阵列．用X射线衍射仪（XRD）、场发射扫描电子显微镜（FE-SEM）、透射电子显微镜（TEM）、对样品的结构、形貌、进行表征和观测．XRD的结果表明所制备的样品为纯的立方面心铁．SEM的图片清晰地说明铁纳米线阵列是大面积、高填充率和高度有序的．TEM的结果显示纳米线直径均匀、表面光滑且长径比大．磁测量的结果表明纳米线阵列的易磁化轴是垂直于模板表面的。     

大规模制备Ni纳米线阵列及其磁学特性研究

在多孔氧化铝模板的纳米孔洞中,利用直流电化学沉积的方法成功地制备了高度有序的磁性金属Ni纳米线阵列.利用扫描电子显微镜(SEM)、透射电子显微镜(TEM)、X射线衍射仪(XRD)和物理性质测量系统(PPMS)对样品的形貌、晶体结构和磁学性能进行了表征测试.SEM和TEM观察结果显示,Ni纳米线均匀地生长在氧化铝模板的孔洞中,直径约为300nm,其表面非常光滑.XRD结果显示,生长的Ni纳米线为fcc结构.磁测量结果表明,与体材料相比,Ni纳米线展现出增强的矫顽力和剩磁比,并且表现出较强的磁各向异性,其居里温度约为627K,与块体Ni的居里温度相当,说明在较高温度下,纳米线仍可呈现铁磁特性.     

单晶铋纳米线阵列的可控生长

采用脉冲电化学沉积技术,利用同一直径的氧化铝模板,通过调节脉冲参数制备出了不同直径的单晶铋纳米线阵列,同时实现了纳米线取向的可控生长.保持脉冲弛豫时间不变,纳米线的直径随着脉冲沉积时间的增加而变大,纳米线的取向随着脉冲占空比的变化发生移动.     

直流电沉积CdS纳米线的研究

在磷酸溶液中，采用二次铝阳极氧化法得到了多孔铝阳极氧化膜(AAO)．以AAO为模板，选用直流电沉积方法在孔内组装CdS半导体纳米线，溶去模板后，获得粗细均一、直径约为100nm、长度约为1．5μm的纳米线，与AAO模板的孔径一致．该方法在制备过程中，无需对AAO模板进行去除阻挡层、喷金或预镀金属等处理过程，而是直接在纳米孔内电沉积CdS，形成CdS半导体纳米线阵列．该方法工艺简单，操作方便，容易获得半导体CdS的一维纳米材料．TEM和XRD测试结果表明，CdS纳米线为六方晶型结构．对CdS纳米线的生长机理还进行了初步的分析和探讨．     

交流电化学沉积铜纳米线阵列及其机理探讨

利用二次阳极氧化的方法制备孔高度有序的阳极氧化铝(AAO)为模板,采用交流电化学沉积方法,在AAO模板孔道内制备Cu纳米线。采用扫描电子显微镜(SEM)、透射电子显微镜(TEM)和X射线衍射仪(XRD)对Cu纳米线的形貌、晶体结构进行研究。结果表明:模板的孔径均匀,孔道平直。Cu纳米线均匀分布在AAO模板纳米孔隙中,直径均一,并沿Cu(Ⅲ)晶面择优生长;AAO模板孔道生长铜纳米线不光滑,成凹凸状,并对此沉积机理进行探讨。     

CuS纳米线阵列的制备

将多孔阳极氧化铝模板(AAO)的电化学沉积技术与真空硫化技术相结合,在制备Cu纳米线的基础之上,制备得到了CuS纳米线阵列.采用扫描电子显微镜电镜和X射线衍射仪对二次氧化的AAO模板和所得Cu与CuS纳米线的形貌和结构进行了表征,结果表明所得CuS纳米线不仅具有良好的有序阵列,而且具有多晶结构.在硫化过程中,随着硫化温度的升高,CuS结晶程度增大,在500～550℃时,达到最大的结晶程度.     

铜纳米线阵列的模板组装

采用电解法溶解多孔阳极氧化铝(PAA)模板的阻挡层,用直流电沉积的方法在模板中组装了铜纳米线阵列.分别用扫描电镜和X射线衍射表征铜纳米线阵列的形貌和晶体结构,用电化学法表征了铜纳米线阵列的电催化性能.结果表明,PAA去阻挡层后,伏安图上出现一个阳极氧化峰.恒电位沉积的铜纳米线直径为22nm,沿(111)晶面择优取向.铜纳米线阵列电极能催化亚硝酸根的还原,其催化电流比本体铜电极上大2倍,峰电位正移80mV.纳米铜阵列电极可用于亚硝酸盐的电化学检测.     

复合锌镍纳米线结构和磁性研究

采用直流电化学沉积方法,在多孔阳极氧化铝模板纳米孔洞中制备出直径约90nm,长度超过10μm的金属Ni/Zn纳米线有序阵列.通过扫描电子显微镜(SEM),透射电子显微镜(TEM),原子力显微镜(AFM),X射线衍射仪(XRD),振动样品磁强计(VSM)对模板及所制备的样品进行形貌、结构及相关性能的表征和测试.结果表明所制备的Ni/Zn纳米线具有沿[111]方向择优生长特性,易磁化方向沿纳米线长轴方向.     

p-Type ZnO nanowire arrays

Well-aligned ZnO nanowire (NW) arrays with durable and reproducible p-type conductivity were synthesized on alpha-sapphire substrates by using N2O as a dopant source via vapor-liquid-solid growth. The nitrogen-doped ZnO NWs are single-crystalline and grown predominantly along the [110] direction, in contrast to the [001] direction of undoped ZnO NWs. Electrical transport measurements reveal that the nondoped ZnO NWs exhibit n-type conductivity, whereas the nitrogen-doped ZnO NWs show compensated highly resistive n-type and finally p-type conductivity upon increasing N2O ratio in the reaction atmosphere. The electrical properties of p-type ZnO NWs are stable and reproducible with a hole concentration of (1-2) x 10(18) cm(-3) and a field-effect mobility of 10-17 cm2 V(-2) s(-1). Surface adsorptions have a significant effect on the transport properties of NWs. Temperature-dependent PL spectra of N-doped ZnO NWs show acceptor-bound-exciton emission, which corroborates the p-type conductivity. The realization of p-type ZnO NWs with durable and controlled transport properties is important for fabrication of nanoscale electronic and optoelectronic devices.     

CdS及其稀土掺杂纳米带的制备与发光性质的研究

采用热蒸发法制备CdS及其稀土掺杂的纳米带(CdS∶Ce3+、CdS∶Er3+)。利用扫描电子显微镜(SEM)、X射线衍射仪(XRD)和荧光光谱仪(PL)对纳米带的形貌、晶体结构和发光性质进行了表征和分析。结果表明,所制备的纳米带的外形规则,表面光滑、平整,纳米带的厚度大约在20～60nm范围内;纳米带具有六方结构,晶格常数a=0.414nm、c=0.671nm;CdS纳米带的光致发光谱的谱峰位于405nm左右;CdS∶Ce3+纳米带的光致发光谱的谱峰位于523和535nm处;CdS∶Er3+纳米带的光致发光谱中观察到3个强的发光峰,分别位于525、556和582nm处。     

Synthesis of PbTe nanowire arrays using lithographically patterned nanowire electrodeposition

We describe the preparation by electrodeposition of arrays of lead telluride (PbTe) nanowires using the lithographically patterned nanowire electrodeposition (LPNE) method. PbTe nanowires had a rectangular cross-section with adjustable width and height ranging between 60-400 nm (w) and 20-100 nm (h). The characterization of these nanowire arrays using X-ray diffraction, transmission electron microscopy and electron diffraction, scanning electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy (XPS) is reported. PbTe nanowires were electrodeposited using a cyclic electrodeposition-stripping technique that produced polycrystalline, stoichiometric, face-centered cubic PbTe with a mean grain diameter of 10-20 nm. These nanowires were more than 1 mm in length and two additional processing steps permitted their suspension across 25 microm air gaps microfabricated on these surfaces. The LPNE synthesis of lithographically patterned PbTe nanowires was carried out in unfiltered laboratory air. Nanowires with lengths of 70-100 microm showed an electrical resistivity comparable to bulk PbTe. XPS reveals that exposure of PbTe nanowires to air causes the formation on the nanowire surface of approximately one monolayer of a mixed lead oxide and tellurium oxide within a few minutes.     

Conformational behavior of DNA-templated CdS inorganic nanowire

We describe the conformational behavior and morphological control of DNA-mineralized CdS nanowires in a bulk solution. The conformational behavior of individual double-stranded DNA in the presence of cadmium ions and stoichiometric mixtures of cadmium ions and sulfide ions was directly visualized by fluorescence microscopy. It was found that in the presence of mixtures of cadmium ions and sulfide ions, DNA molecules exhibit a conformational transition from an elongated coil to a compacted state. Mineralized DNA nanowires possess a significant conformational freedom at a microscale, and flexibility in the micro- and nanodimensions. The density of the inorganic material on the nanowire can be controlled by varying the concentrations and the molar ratio of Na(2)S to Cd(ClO(4))(2).     

The control of the growth orientations of electrodeposited single-crystal nanowire arrays: a case study for hexagonal CdS

The controllable growth of highly aligned and ordered semiconductor nanowire arrays is crucial for their potential applications in nanodevices. In the present study, both the growth orientation and the microstructure of hexagonal CdS nanowire arrays electrodeposited in a porous alumina template with 40?nm diameter pores have been controlled by simply tuning the deposition current density. An extremely low current density of 0.05?mA?cm(-2) is favorable for the growth of single-crystal CdS nanowires along the normal direction of the intrinsic low-surface-energy (103) face. This can be understood well by a modified critical dimension model given in the present work.     

ZnO纳米线阵列的图形化生长

采用光刻和射频磁控溅射技术在Si衬底上制备了图形化的ZnO种子层薄膜。分别采用气相榆运和水热合成法，制备了最小单元为30μm的图形化的ZnO纳米线阵列。X射线衍射（XRD）分析显示单晶纳米线阵列具有高度的c轴[001]择优取向生长性质，从扫描电子显微镜（SEM）照片看出，阵列图形完整清晰，边缘整齐，纳米线阵列在室温下光致发光（PL）谱线中在380hm左右具有强烈的紫外发射峰，可见光区域发射峰得到了抑制，证明ZnO纳米线阵列氧空位缺陷少，晶体质量高。     

Hydrothermal synthesis of titanate nanowire arrays

A simple templateless synthesis strategy for titanate nanowire arrays was developed by employing hydrothermal reactions. Hydrothermal treatment of metallic titanium powder with H₂O₂ in a 10 M NaOH solution produced a new sodium titanate compound, Na₂Ti₆O₁₃·xH₂O (x ∼ 4.2), as arrays of nanowires of lengths up to 1 mm. The nanowires were characterized by using XRD, SEM, TGA, and TEM. The nanowires have exceptionally large aspect ratios of 5000 or higher, and they can form arrays over a large area of 2 × 3 cm². Investigations on the reaction products in varied conditions indicate that the array formation requires simultaneously controlled formation and crystal growth rates of the Na₂Ti₆O₁₃·xH₂O phase.     

Fabrication of suspended silicon nanowire arrays

A method to fabricate suspended silicon nanowires that are applicable to electronic and electromechanical nanowire devices is reported. The method allows for the wafer-level production of suspended silicon nanowires using anisotropic etching and thermal oxidation of single-crystal silicon. The deviation in width of the silicon nanowire bridges produced using the proposed method is evaluated. The NW field-effect transistor (FET) properties of the device obtained by transferring suspended nanowires are shown to be practical for useful functions.