共查询到20条相似文献,搜索用时 46 毫秒
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采用直流电沉积在多孔有序氧化铝模板中制备了不同结构的有序镍纳米线阵列。采用SEM和TEM对所制备的镍纳米线的形貌和结构进行了表征。研究了镍纳米线不同结构对镍纳米线阵列磁性性能的影响规律.当电沉积电压为2.5V时制备的镍纳米线为多晶结构;电沉积电压4V时,镍纳米线为沿[220]择优取向的单晶结构;电沉积电压>5V时,择优取向由[220]转为[111]方向.磁滞回线结果表明,单晶镍纳米线阵列与多晶纳米线阵列相比具有更高的矩形度,沿[111]择优取向的单晶纳米线相比沿[220]取向的单晶镍纳米线具有更大的矩形度,表现出显著的磁各向异性。 相似文献
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使用电化学沉积方法,在有序的氧化铝模板(AAO)孔洞中制备了铁纳米线有序阵列.用X射线衍射仪(XRD)、场发射扫描电子显微镜(FE-SEM)、透射电子显微镜(TEM)、对样品的结构、形貌、进行表征和观测.XRD的结果表明所制备的样品为纯的立方面心铁.SEM的图片清晰地说明铁纳米线阵列是大面积、高填充率和高度有序的.TEM的结果显示纳米线直径均匀、表面光滑且长径比大.磁测量的结果表明纳米线阵列的易磁化轴是垂直于模板表面的。 相似文献
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大规模制备Ni纳米线阵列及其磁学特性研究 总被引:1,自引:0,他引:1
在多孔氧化铝模板的纳米孔洞中,利用直流电化学沉积的方法成功地制备了高度有序的磁性金属Ni纳米线阵列.利用扫描电子显微镜(SEM)、透射电子显微镜(TEM)、X射线衍射仪(XRD)和物理性质测量系统(PPMS)对样品的形貌、晶体结构和磁学性能进行了表征测试.SEM和TEM观察结果显示,Ni纳米线均匀地生长在氧化铝模板的孔洞中,直径约为300nm,其表面非常光滑.XRD结果显示,生长的Ni纳米线为fcc结构.磁测量结果表明,与体材料相比,Ni纳米线展现出增强的矫顽力和剩磁比,并且表现出较强的磁各向异性,其居里温度约为627K,与块体Ni的居里温度相当,说明在较高温度下,纳米线仍可呈现铁磁特性. 相似文献
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在磷酸溶液中,采用二次铝阳极氧化法得到了多孔铝阳极氧化膜(AAO).以AAO为模板,选用直流电沉积方法在孔内组装CdS半导体纳米线,溶去模板后,获得粗细均一、直径约为100nm、长度约为1.5μm的纳米线,与AAO模板的孔径一致.该方法在制备过程中,无需对AAO模板进行去除阻挡层、喷金或预镀金属等处理过程,而是直接在纳米孔内电沉积CdS,形成CdS半导体纳米线阵列.该方法工艺简单,操作方便,容易获得半导体CdS的一维纳米材料.TEM和XRD测试结果表明,CdS纳米线为六方晶型结构.对CdS纳米线的生长机理还进行了初步的分析和探讨. 相似文献
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Yuan GD Zhang WJ Jie JS Fan X Zapien JA Leung YH Luo LB Wang PF Lee CS Lee ST 《Nano letters》2008,8(8):2591-2597
Well-aligned ZnO nanowire (NW) arrays with durable and reproducible p-type conductivity were synthesized on alpha-sapphire substrates by using N2O as a dopant source via vapor-liquid-solid growth. The nitrogen-doped ZnO NWs are single-crystalline and grown predominantly along the [110] direction, in contrast to the [001] direction of undoped ZnO NWs. Electrical transport measurements reveal that the nondoped ZnO NWs exhibit n-type conductivity, whereas the nitrogen-doped ZnO NWs show compensated highly resistive n-type and finally p-type conductivity upon increasing N2O ratio in the reaction atmosphere. The electrical properties of p-type ZnO NWs are stable and reproducible with a hole concentration of (1-2) x 10(18) cm(-3) and a field-effect mobility of 10-17 cm2 V(-2) s(-1). Surface adsorptions have a significant effect on the transport properties of NWs. Temperature-dependent PL spectra of N-doped ZnO NWs show acceptor-bound-exciton emission, which corroborates the p-type conductivity. The realization of p-type ZnO NWs with durable and controlled transport properties is important for fabrication of nanoscale electronic and optoelectronic devices. 相似文献
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CdS及其稀土掺杂纳米带的制备与发光性质的研究 总被引:4,自引:1,他引:3
采用热蒸发法制备CdS及其稀土掺杂的纳米带(CdS∶Ce3+、CdS∶Er3+)。利用扫描电子显微镜(SEM)、X射线衍射仪(XRD)和荧光光谱仪(PL)对纳米带的形貌、晶体结构和发光性质进行了表征和分析。结果表明,所制备的纳米带的外形规则,表面光滑、平整,纳米带的厚度大约在20~60nm范围内;纳米带具有六方结构,晶格常数a=0.414nm、c=0.671nm;CdS纳米带的光致发光谱的谱峰位于405nm左右;CdS∶Ce3+纳米带的光致发光谱的谱峰位于523和535nm处;CdS∶Er3+纳米带的光致发光谱中观察到3个强的发光峰,分别位于525、556和582nm处。 相似文献
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Yang Y Kung SC Taggart DK Xiang C Yang F Brown MA Güell AG Kruse TJ Hemminger JC Penner RM 《Nano letters》2008,8(8):2447-2451
We describe the preparation by electrodeposition of arrays of lead telluride (PbTe) nanowires using the lithographically patterned nanowire electrodeposition (LPNE) method. PbTe nanowires had a rectangular cross-section with adjustable width and height ranging between 60-400 nm (w) and 20-100 nm (h). The characterization of these nanowire arrays using X-ray diffraction, transmission electron microscopy and electron diffraction, scanning electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy (XPS) is reported. PbTe nanowires were electrodeposited using a cyclic electrodeposition-stripping technique that produced polycrystalline, stoichiometric, face-centered cubic PbTe with a mean grain diameter of 10-20 nm. These nanowires were more than 1 mm in length and two additional processing steps permitted their suspension across 25 microm air gaps microfabricated on these surfaces. The LPNE synthesis of lithographically patterned PbTe nanowires was carried out in unfiltered laboratory air. Nanowires with lengths of 70-100 microm showed an electrical resistivity comparable to bulk PbTe. XPS reveals that exposure of PbTe nanowires to air causes the formation on the nanowire surface of approximately one monolayer of a mixed lead oxide and tellurium oxide within a few minutes. 相似文献
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We describe the conformational behavior and morphological control of DNA-mineralized CdS nanowires in a bulk solution. The conformational behavior of individual double-stranded DNA in the presence of cadmium ions and stoichiometric mixtures of cadmium ions and sulfide ions was directly visualized by fluorescence microscopy. It was found that in the presence of mixtures of cadmium ions and sulfide ions, DNA molecules exhibit a conformational transition from an elongated coil to a compacted state. Mineralized DNA nanowires possess a significant conformational freedom at a microscale, and flexibility in the micro- and nanodimensions. The density of the inorganic material on the nanowire can be controlled by varying the concentrations and the molar ratio of Na(2)S to Cd(ClO(4))(2). 相似文献
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The controllable growth of highly aligned and ordered semiconductor nanowire arrays is crucial for their potential applications in nanodevices. In the present study, both the growth orientation and the microstructure of hexagonal CdS nanowire arrays electrodeposited in a porous alumina template with 40?nm diameter pores have been controlled by simply tuning the deposition current density. An extremely low current density of 0.05?mA?cm(-2) is favorable for the growth of single-crystal CdS nanowires along the normal direction of the intrinsic low-surface-energy (103) face. This can be understood well by a modified critical dimension model given in the present work. 相似文献
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采用光刻和射频磁控溅射技术在Si衬底上制备了图形化的ZnO种子层薄膜。分别采用气相榆运和水热合成法,制备了最小单元为30μm的图形化的ZnO纳米线阵列。X射线衍射(XRD)分析显示单晶纳米线阵列具有高度的c轴[001]择优取向生长性质,从扫描电子显微镜(SEM)照片看出,阵列图形完整清晰,边缘整齐,纳米线阵列在室温下光致发光(PL)谱线中在380hm左右具有强烈的紫外发射峰,可见光区域发射峰得到了抑制,证明ZnO纳米线阵列氧空位缺陷少,晶体质量高。 相似文献
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A simple templateless synthesis strategy for titanate nanowire arrays was developed by employing hydrothermal reactions. Hydrothermal treatment of metallic titanium powder with H2O2 in a 10 M NaOH solution produced a new sodium titanate compound, Na2Ti6O13·xH2O (x ∼ 4.2), as arrays of nanowires of lengths up to 1 mm. The nanowires were characterized by using XRD, SEM, TGA, and TEM. The nanowires have exceptionally large aspect ratios of 5000 or higher, and they can form arrays over a large area of 2 × 3 cm2. Investigations on the reaction products in varied conditions indicate that the array formation requires simultaneously controlled formation and crystal growth rates of the Na2Ti6O13·xH2O phase. 相似文献
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Lee KN Jung SW Shin KS Kim WH Lee MH Seong WK 《Small (Weinheim an der Bergstrasse, Germany)》2008,4(5):642-648
A method to fabricate suspended silicon nanowires that are applicable to electronic and electromechanical nanowire devices is reported. The method allows for the wafer-level production of suspended silicon nanowires using anisotropic etching and thermal oxidation of single-crystal silicon. The deviation in width of the silicon nanowire bridges produced using the proposed method is evaluated. The NW field-effect transistor (FET) properties of the device obtained by transferring suspended nanowires are shown to be practical for useful functions. 相似文献