一种可用于5G点对点通信的宽频双极化阵列天线

本文设计了一款高增益宽频双极化天线。该天线采用多层辐射贴片的结构，拓展天线的带宽，并用一对正交分布的微带线直接馈电在辐射贴片上，增强天线极化隔离度，形成双极化特性。通过设计馈电网络，组成阵列后实现良好的带宽与定向辐射特性，并且具有良好的端口隔离度和辐射极化纯度。实测结果表明，小于-10dB的阻抗带宽为18.18%(5.0～6.0GHz),带内平均增益为15.5dBi,全频段端口隔离度小于-30dB,主瓣方向上的主极化电平与交叉极化电平相差40dB,带内增益波动小于3dB,具有良好的增益平坦度。该天线适合作为5G通信系统中的天线单元，具有实用价值。     

宽带高隔离度双极化多层微带阵列天线研制

一种新型阵列天线采用多层印制板形式、通过寄生贴片加多级阻抗匹配实现了宽频带工作,对矩形贴片相互垂直的两条边采用"H"缝耦合及微带线边馈实现了双极化。实验结果表明,双层带线馈电网络很大程度上解决了馈电网络间耦合问题,提高了端口隔离度。天线带宽约26.5%,实测增益19 d B左右,隔离度大于37 d B。该天线剖面低、质量小,可作为单元组成更大规模的阵列。     

一种双陷波超宽带阵列天线的设计

以传统矩形微带天线为基础模型,设计了一种双陷波超宽带阵列天线。阵列由两个相同结构的超宽带单极子天线构成,均由微带线馈电。通过在辐射贴片上蚀刻两个C型槽实现了WiMAX和WLAN频段的陷波,在两个贴片边缘开一个矩形缺口并加载寄生单元来提高隔离度。测试与仿真吻合度较好,天线覆盖2.5～12.0 GHz,具有3.3～3.7 GHz和5.1～5.9 GHz两个阻带,隔离度全部高于22 dB,峰值增益达6.7 dB,辐射方向近乎全向,可应用于UWB无线通信系统。     

一种单层贴片式双频双极化滤波天线

设计了一种单层式跨频段双频双极化滤波天线。该天线在同一平面上的高频低频辐射贴片共用一个馈电端口,且均可以在两个垂直方向馈电实现交叉方向的线极化辐射。该天线通过在馈电点与低频辐射贴片之间插入一个低通滤波器,明显提高了高频辐射贴片的交叉极化隔离度。研究结果表明,带滤波结构的天线在两个频率点的反射系数小于-20 dB,4.9 GHz的最大增益大于4.8 dBi,26 GHz的最大增益11.7 dBi,〖JP2〗两个辐射频率的辐射方向图均体现良好的线极化特性,且主极化比交叉极化大20 dBi。该天线可作为未来微波与毫米波共用的5G通信终端天线或5G通信基站的MIMO天线阵元,相关技术和结论对于研制一体化集成的双频交叉极化相控阵天线也有重要参考价值。     

加载超表面的双频紧凑高隔离阵列天线设计

为了减小极小距离多输入多输出(multiple-input multiple-output, MIMO)天线之间的相互耦合,设计了一种极紧凑的高隔离度的双频MIMO贴片天线,谐振频率分别为2.45 GHz和3.5 GHz。该MIMO天线由两个对称的双层U型槽贴片天线组成,其中边与边的距离为0.5 mm(0.004λ0,λ0为中心频率2.45 GHz时的自由空间波长)。利用不同宽度的双层金属线切割对作为超表面单元,该超表面体积紧凑,可以显著降低天线单元之间的相互耦合。仿真和测量结果表明：在天线工作频段2.4～2.5 GHz和3.4～3.6 GHz范围内,单元间的隔离度可以提高到30 dB以上,并且两个天线端口阻抗匹配良好,同时在低频段的总效率提高了9%左右;两天线间的包络相关系数(envelop correlation coefficient,ECC)在2.45 GHz时由0.33降到0.01,在3.5 GHz时由0.09降到0.006,所设计天线具有良好的辐射性能。     

Ku波段双频正交极化微带阵列天线

设计了一种Ku波段双频正交极化256元微带阵列天线。该阵列天线的正交极化辐射通过共面微带线和背向探针分别进行激励,并结合阵列馈电网络的有效设计实现了宽频带、高隔离和高增益性能。仿真和实测结果表明,该阵列天线的垂直极化端口相对阻抗带宽（S11≤-10 dB）达到21.04%,覆盖频率范围10.7～13.33 GHz;水平极化端口相对阻抗带宽达到27.86%,覆盖频率范围12.4～16.37 GHz;两极化端口隔离度高于40 dB;工作带宽内天线增益达到28～30.1 dBi。     

中远程一体化车载雷达线阵天线的设计

该文提出了一种新型的宽带近接耦合毫米波微带阵列天线,并将其作为77~81 GHz中远程汽车雷达的专用天线。该天线阵列由微带线及一系列矩形和多边形辐射单元组成。辐射单元在微带线两侧呈周期性分布,间隔约为引导波长的1/2。为增强激励耦合引入了矩形和多边形辐射单元,在拓宽阻抗带宽的同时,抑制了带外频率。不同辐射单元和矩形反射槽相匹配,达到波束赋形的效果,实现了平肩膀辐射方向图。通过调整辐射单元与微带线的间隔,控制辐射单元的归一化电阻。在工作频率为77~81 GHz时,阵列天线的增益超过14 dBi,阻抗带宽达到7.47%(76.5~82.4 GHz)。对实物样本进行加工及性能检测,测试表明,仿真与实测数据基本一致。     

一种基于电磁耦合馈电结构的双极化微带天线设计

文中设计了一种层叠结构的双极化微带天线,两个极化端口采用不同的电磁耦合馈电方式,激励起两个正交的辐射场模式,提高了极化端口之间的隔离度。设计的天线由三层介质极板组成,两个极化端口的馈电层分别位于不同的介质层上,端口1采用缝隙耦合馈电,端口2采用振子临近耦合馈电,两个极化端口均从地板底部输出,适合于阵列应用。设计了一种工作于X波段的双极化方形微带贴片,在馈电结构上进行了匹配设计,实现两个极化端口的匹配和隔离。采用全波电磁仿真技术进行了结构设计和优化,仿真结果表明,在工作频率为9.85 GHz和10.15 GHz的频率范围内,该天线的两个极化端口的电压驻波比均小于2,极化端口的隔离度大于26 dB;在中心频点10 GHz处的增益分别约为5.79 dBi和5.17 dBi,带内增益平稳;虽然两个极化端口互异,但是在E面和H面上,两个极化端口表现出相接近的方向图,主瓣宽度均在80°左右,在主辐射方向上的交叉极化电平低于-25 dB。研究结果表明设计的双极化微带天线具有高隔离度和较为对称的辐射方向图性能,适合于在双极化阵列天线中应用。     

高隔离度双极化孔径耦合天线设计

采用多层贴片、垂直双H型孔径耦合结构设计了一种高隔离度双极化孔径耦合微带天线。主要通过实测分析不同贴片间距以及孔径大小对天线隔离度的影响,确定了最佳贴片间距和孔径尺寸。经AgilentES062A矢量网络分析仪实测,得出天线两个端口的回波损耗在2．4～2．5GHz能达到一16dB以下,在工作频段内双端口隔离度优于一31dB,与仿真结果吻合较好。该设计结构简单,成本低廉,易于制作,且可作为双极化基站阵列天线单元。     

一种高增益微波光子天线阵列的设计

设计了一种中心频率为20 GHz的8单元微带光子天线阵列,利用微波光子技术解决了传统微波技术在高频、宽带等方面的问题。天线单元为矩形微带贴片天线,馈电网络采用具有λ/4阻抗匹配枝节设计的多级T型等分功分器。采用光子上变频技术产生20 GHz的微波信号,光载微波信号经光纤传输后由阵列天线发射。利用三维高频结构电磁场仿真对该天线阵模型的搭建和优化进行仿真,结果表明天线阵仿真阻抗带宽为1.15 GHz,在带宽内最大增益为13.6 dBi。将天线阵列应用到微波光子系统发射端,测量结果表明,最大增益可以达到6.92 dBi。该天线阵列性能良好,可广泛应用于未来移动通信网络覆盖领域。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.