A 1.5 Gb/s 8×8 cross-connect switch using a time reservationalgorithm

An input queuing type switching architecture that uses a high-performance contention resolution algorithm to achieve high-speed and large-capacity cross-connect switching is presented. The algorithm, called the time reservation algorithm, features time scheduling and pipeline processing. The performance of this switch is evaluated by computer simulation. The throughput of this switch is about 90%, without requiring high internal operation speeds. Three LSI designs are developed to verify the feasibility of the high-speed switch. They are the input buffer controller LSI, the contention-resolution module LSI, and the space-division switching LSI. The LSIs were constructed with an advanced Si-bipolar high-speed process. Also, 8×8 cross-connect switching boards are introduced. The measured maximum port speed is 1.55 Gb/s     

A 9.6-Gb/s HEMT ATM switch LSI with event-controlled FIFO

An asynchronous-transfer-mode (ATM) switch LSI was designed for the broadband integrated services digital network (B-ISDN) and fabricated using 0.6-μm high-electron-mobility-transistor (HEMT) technology. To enhance the high-speed performance of direct-coupled FET logic (DCFL), event-controlled logic was used instead of conventional static memory for the first-in first-out (FIFO) buffer circuit. The 4.8-mm×4.7-mm chip contains 7100 DCFL gates. The maximum operating frequency was 1.2 GHz at room temperature with a power dissipation of 3.7 W. The single-chip throughput was 9.6 Gb/s. An experimental 4-to-4 ATM switching module using 16 switch LSIs achieved a throughput of 38.4 Gb/s     

A circuit design for 2-Gbit/s Si bipolar crosspoint switch LSIs

An 8×8 and an expandable 16×16 crosspoint switch LSI utilizing a new circuit design and super self-aligned process technology (SST-1A) are discussed. The LSIs successfully switched with a bit error rate of less than 10^-9 at 2.5 Gb/s using a 2⁹-1 pseudorandom NRZ sequence. Pulse jitter was limited to less than 80 ps at 1.2 Gb/s by utilizing a small internal voltage swing (225 mV) employing a differential CML cell, including a selector. The LSIs have an ECL-compatible interface, -4-V and -2-V power supply voltages, and a power dissipation of less than 0.9 W for the 8×8 LSI and 2.8 W for the expandable 16×16 LSI     

A 2 Gb/s expandable space-division switching LSI and networkarchitecture for gigabit-rate broad-band circuit switching

An expandable space-division (SD) switch architecture and a bipolar circuit design for gigabit-per-second crosspoint-switch LSIs are described. An expandable 2-Gb/s 16×16 crosspoint switch LSI which employs a novel switch structure, a novel circuit design, and a super self-aligned process (SST-1A) is developed. A switching module and partial 1:n nonblock, full 1:1 nonblock switching network architecture are also presented. Using the LSI and the switching network architecture, an experimental 620-Mb/s network system is demonstrated     

An expandable time-division circuit switching LSI and networkarchitecture for broadband ISDN

A broadband network architecture is proposed that integrates multimedia services, such as data, video, and telephony information, using 52-Mb/s based STM-paths at the user network interface (UNI). The user can access any new service via the STM-based access network via either synchronous transfer mode (STM) switching or asynchronous transfer mode (ATM) switching. STM circuit switching supports long duration, constant bandwidth data transfer services such as video and high-definition television (HDTV) distribution and will also be used for the crossconnect system. Circuit switching can provide transparent transmission during long connection periods. This paper also proposes an expandable time-division switch architecture, an expandable time-division switching LSI, and an expandable switching module for small to large size system applications. The proposed time-division switching LSI, module, and system handle 52-Mb/s bearer signals and have throughputs of 2.4 Gb/s, 10 Gb/s, and 40 Gb/s, respectively. The time-division switch realizes video distribution with 1:n connections. Finally, a local switching node that features an expandable 52-Mb/s time-division circuit switching network is shown for multimedia access networking     

A 622-Mb/s 8×8 ATM switch chip set with shared multibufferarchitecture

An asynchronous transfer mode (ATM) switch chip set, which employs a shared multibuffer architecture, and its control method are described. This switch architecture features multiple-buffer memories located between two crosspoint switches. By controlling the input-side crosspoint switch so as to equalize the number of stored ATM cells in each buffer memory, these buffer memories can be treated as a single large shared buffer memory. Thus, buffers are used efficiently and the cell loss ratio is reduced to a minimum. Furthermore, no multiplexing or demultiplexing is required to store and restore the ATM cells by virtue of parallel access to the buffer memories via the crosspoint switches. Access time for the buffer memory is thus greatly reduced. This feature enables high-speed switch operation. A three-VLSI chip set using 0.8-μm BiCMOS process technology has been developed. Four aligner LSIs, nine bit-sliced buffer-switch LSIs, and one control LSI are combined to create a 622-Mb/s 8×8 ATM switching system that operates at 78 MHz. In the switch fabric, 155-Mb/s ATM cells can also be switched on the 622-Mb/s port using time-division multiplexing     

64-Gb/s highly reliable network switch (RHiNET-2/SW) using paralleloptical interconnection

RHiNET-2/SW is a network switch that enables high-performance optical network based parallel computing system in a distributed environment. The switch used in such a computing system must provide high-speed, low-latency packet switching with high reliability. Our switch allows high-speed 8-Gb/s/port optical data transmission over a distance of up to 100 m, and the aggregate throughput is 64 Gb/s. In RHiNET-2/SW, eight pairs of 800-Mb/s×12-channel optical interconnection modules and a one-chip CMOS ASIC switch LSI (a 784-pin BGA package) are mounted on a single compact board. To enable high-performance parallel computing, this switch must provide high-speed, highly reliable node-to-node data transmission. To evaluate the reliability of the switch, we measured the bit error rate (BER) and skew between the data channels. The BER of the signal transmission through one I/O port was better than 10^-11 at a data rate of 800 Mb/s ×10 b with a large timing-budget margin (870 ps) and skew of less than 140 ps. This shows that RHiNET-2/SW can provide high-throughput, highly reliable optical data transmission between the nodes of a network-based parallel computing system     

A 100-Gb/s throughput ATM switch MCM with a 320-channel paralleloptical I/O interface

For an ATM switch system, we have developed a 100-Gb/s input/output (I/O) throughput optical I/O interface ATM switch multichip module (MCM) that has 320-ch optical I/O ports. This MCM is fabricated using ceramic (MCM-C) technology and very-small highly-parallel O/E and E/O optical converters. It uses 0.25-μm complementary metal oxide semiconductors (CMOS) ATM switch large scale integrations (LSIs) and has a total I/O throughput of up to 160 Gb/s. A prototype module with total I/O throughput of 100 Gb/s has been partially assembled using eight optical I/O interface blocks, each composed of a 40-ch O/E converter and a 40-ch E/O converter; the data rate per channel is from dc to 700 Mb/s. Using this module we developed an optical I/O interface ATM switch system and confirmed the operation of the optical interface     

Deep-submicron HEMT technology

The current status of HEMT technology and its impact on computers and communications are presented, focusing on the advantages of the device in the deep-submicrometre dimensional range, self-aligned HEMT processing, and the HEMT LSI implemented in supercomputer and communication systems.

Ultra-low-noise HEMTs are already commercially available in satellite communications, and have made a great impact in expanding the broadcasting satellite market. For ultra-high-speed digital LSI applications the 1 k gate bus-driver logic LSI has been developed to demonstrate high-speed data transfer in a high-speed parallel processing supercomputer system at room temperature, operating at 10·92 Gflops. The 7 k gate asynchronous transfer mode (ATM) switch LSI has alsi been developed to evaluate high-speed data switching for Broadband Integrated Service Digital Network (B-ISDN). The maximum operation frequency was 1·2 GHz at room temperature. The single-chip throughput was 9·6 Gb/s and a throughput of 38·4 Gb/s was achieved in a 4 × 4 ATM switching module.     

An ultrafast photonic ATM switch based on bit-interleavemultiplexing

An optical ATM switch is proposed in which cells from individual input channels are time-division multiplexed in a bit-interleave manner. This switch can easily handle multicast switching because it is based on a broadcast-and-select network. Compared to an alternative switch that uses a cell-interleave time-division multiplexing scheme, the proposed optical switch has a much simpler structure. It does not need a cell compressor at each input and a cell expander at each output, which greatly reduces hardware complexity. Feasibility analyzes showed that a 64×64 photonic ATM switch with 2.5 Gb/s input/output is possible using the proposed technology. In an experimental demonstration, 4 b cells were selected from a 55 Gb/s bit-interleave multiplexed cell stream by using a new nonlinear optical fiber switch. With its high switch throughput, our switch is a strong candidate for future large-capacity optical switching nodes     

A Si bipolar 1.4-GHz time space switch LSI for B-ISDN

A 155-MB/s 32×32 Si bipolar switch LSI designed for wide application in the broadband ISDN was implemented. The operating speed is 1.4 GHz using an A-BSA Si bipolar process. Its throughput is 5.0 Gb/s by handling four 1.4-GHz interfaces, each of which supports an eight-channel multiplexed data stream. To realize a highly integrated high-speed bipolar LSI, power consumption and chip area should be reduced. Two technologies were developed for the LSI: (1) an active pull-down circuit with an embedded bias circuit in each gate, and (2) a modified standard cell with overlapped cell-channel structure. Using these technologies, total power consumption and chip area were reduced to 60% and 70%, respectively, of what is expected when conventional emitter-coupled logic (ECL) technologies and standard cell structures are used. The LSI evaluation results show that the developed LSI has sufficient performance to realize a large-scale B-ISDN switching system     

Design and performance of an optical path cross-connect systembased on wavelength path concept

This paper describes the system design and performance of an optical path cross-connect (OPXC) system based on wavelength path concept. The (OPXC) is designed to offer 16 sets of input and output fiber ports with each fiber transporting eight multiwavelength signals for optical paths. Each optical path has a capacity of 2.5 Gb/s. Consequently, the total system throughput is 8×16×2.5=320 Gb/s and the OPXC features high modularity and expandability for switch components. By exploiting planar lightwave circuit (PLC) technologies, four sets of (8×16) delivery-and-coupling-type optical switches (DC-switches) are developed for the 320 Gb/s throughput OPXC system. The DC-switch offers the average insertion-loss of 12.6 dB and ON/OFF ratio of 42.1 dB. The PLC arrayed-waveguide gratings are confirmed to successfully demultiplex the eight directly modulated signals, multiplexed at a spacing of 1 nm, with a crosstalk of under -25 dB. Eight wavelength-division multiplexing signals, directly modulated at 2.5 Gb/s, are confirmed to be transported over 330 km via a cross-connection node in the test-bed system that simulates five-node network. The experimental performances demonstrated In this paper ensures full scale implementation of the proposed optical path cross-connect system with 320 Gb/s throughput and high integrity     

A one-chip scalable 8*8 ATM switch LSI employing shared bufferarchitecture

The authors present a one-chip scalable 8×8 shared buffer switch LSI which includes a 256-cell buffer. Speedup, flow control, and input slot rotation functions are provided in order to interconnect LSIs for scaling-up without degrading cell loss rates. Computer simulations show that these functions bring a satisfactory result and can make the cell loss- rate for a Clos three-stage network superior to that for the output buffer switch which includes the same amount of buffer space. A 0.8 μm BiCMOS process is employed for this LSI. The total number of transistors is one million. This LSI has already been fabricated     

A 10-Gb/s (1.25 Gb/s×8)4×2 0.25-μm CMOS/SIMOX ATMswitch based on scalable distributed arbitration

This paper presents the design and implementation of a scalable asynchronous transfer mode switch. We fabricated a 10-Gb/s 4×2 switch large-scale integration (LSI) that uses a new distributed contention control technique that allows the switch LSI to be expanded. The developed contention control is executed in a distributed manner at each switch LSI, and the contention control time does not depend on the number of connected switch LSI's. To increase the LSI throughput and reduce the power consumption, we used 0.25-μm CMOS/SIMOX (separation by implanted oxygen) technology, which enables us to make 221 pseudo-emitter-coupled-logic I/O pins with 1.25-Gb/s throughput. In addition, power consumption of 7 W is achieved by operating the CMOS/SIMOX gates at -2.0 V. This consumption is 36% less than that of bulk CMOS gates (11 W) at the same speed at -2.5 V. Using these switch LSI's, an 8×8 switching multichip module with 80-Gb/s throughput was fabricated with a compact size     

640-Gb/s high-speed ATM switching system based on 0.25-μm CMOS,MCM-C, and optical WDM interconnection

A 640-Gb/s high-speed ATM switching system that is based on the technologies of advanced MCM-C, 0.25-μm CMOS, and optical wavelength-division-multiplexing (WDM) interconnection is fabricated for future broadband backbone networks. A 40-layer, 160×114 mm ceramic MCM forms the basic ATM switch module with 80-Gb/s throughput. It consists of 8 advanced 0.25-μm CMOS LSIs and 32 I/O bipolar LSIs. The MCM has a 7-layer high-speed signal line structure having 50-Ω strip lines, high-speed signal lines, and 33 power supply layers formed using 50-μm thick ceramic layers to achieve high capacity. A uniquely structured closed-loop-type liquid cooling system for the MCM is used to cope with its high power dissipation of 230 W. A three-stage ATM switch is made using the optical WDM interconnection between high-performance MCMs. For WDM interconnection, newly developed compact 10-Gb/s, 8-WDM optical transmitter and receiver modules are used. These modules are each only 80×120×20 mm and dissipate 9.65 W and 22.5 W, respectively. They have a special chassis for cooling, which contains high-performance heat-conductive plates and micro-fans. An optical WDM router based on an arrayed waveguide router is used for mesh interconnection of boards. The optical WDM interconnect has 640-Gb/s throughput and simple interconnection     

A 0.8-μm BiCMOS ATM switch on an 800 Mb/s asynchronous bufferedbanyan network

An experimental element switch LSI for asynchronous transfer mode (ATM) switching systems was realized using 0.8-μm BiCMOS technology. The element switch transfers cells asynchronously when used in a buffered banyan network. Three key features of the element switch architecture are CASO buffers to increase the throughput, a synchronization technique called SCDB (synchronization in a clocked dual port buffer) to make possible asynchronous cell transmission on the element switches with simple hardware, and an implementation technique for virtual cut through, called CELL-BYPASS, which lowers the latency. An implementation of elastic store is proposed to achieve high-speed synchronization with simple hardware. The element switch LSI adopts an emitter-coupled-logic (ECL) interface. The maximum operation frequency of the element switch LSI is 200 MHz (typical)     

32×32 shared buffer type ATM switch VLSIs for B-ISDNs

A set of 0.8 μm CMOS VLSIs developed for shared buffer switches in asynchronous transfer mode (ATM) switching systems is described. A 32×32 unit switch consists of eight buffer memory VLSIs, two memory control VLSIs, and two commercially available first in first out (FIFO) memory LSIs. Using the VLSIs, the switch can be mounted on a printed board. To provide excellent traffic characteristics not only under random traffic conditions but also under burst traffic conditions, this switch has a 2-Mb shared buffer memory, the largest reported to date. which can save 4096 cells among 32 output ports. This switch has a priority control function to meet the different cell loss rate requirements and switching delay requirements of different service classes. A multicast function and a 600 Mb/s link switch architecture, which are suitable for ATM network systems connecting various media, and an expansion method using the 32×32 switching board to achieve large-scale switching systems such as 256×256 or 1024×1024 switches are discussed     

新型光缓存器和2×622Mb／s ATM光交换系统

本文给出一种新型的光缓存器的结构，以解决在ＡＴＭ光交换中的信元碰撞问题。这种缓存器由光纤延迟线、光波导开关阵及非线性半导体光放大器构成。文中还报告了一种用于交换各用户不同速率的信元（可达６２２Ｍｂ／ｓ）的ＡＴＭ光交换实验系统，系统的总容量为１．２Ｇｂ／ｓ。     

Broadcast-and-select photonic ATM switch with frequency divisionmultiplexed output buffers

A photonic ATM switch has been developed with frequency division multiplexed (FDM) output buffers. The switch has a broadcast-and-select network architecture using fixed-frequency-channel transmitters and a passive star configuration. Although it has a simple structure, it can provide either broadcast or multicast switching. The output buffers, which resolve cell contentions, are comprised of fiber delay lines that can easily handle signal speed of over 10 Gb/s. Experimental switching of two-multiplexed 10 Gb/s cells with a 2.8-dB power penalty demonstrated high-speed switching