用于AC/DC开关电源芯片的片内电源电路

本文设计了一种应用于AC/DC开关电源芯片的片内电源电路。该电路输入电压范围110V～220V,输出电压稳定在约5.8V。本电路仅在开关电源芯片中功率开关关断的半周期,通过高压JFET抽取外部电源电能给储能电容充电,来维持输出电压的稳定,具有输入电压范围广,电路结构简单的特点。通过HSPICE仿真实验,取得预期的效果。     

高压、高效率白光LED驱动电路的研究与设计

设计了一种高效率的高输入电压,恒定电流输出的白光LED驱动芯片.采用高压工艺,以脉宽调制(PWM)峰值电流的控制方式,实现了宽范围电压输入、恒定电流输出的LED驱动芯片的设计.内部集成了带隙电压基准源,产生0.25V的参考电压.芯片设计采用了高压横向扩散金属氧化物半导体场效应管(LDDMOS),设计了电压预调整电路,实现了输入电压范围在85V-400V间变化,输出电流在1毫安到1安培间设定.芯片仿真结果显示电能转换效率最高可达90%以上.     

一种用于高压芯片的带隙基准源设计

基于TSMC 1.0 μm 40 V BCD工艺,利用带隙原理设计了一款用于高压芯片的基准源电路.仿真结果显示,该电路可以工作在10～25 V电源电压下,输出的基准电压精度为13.3×10-6/℃,输出电流高达20 mA,且受电源电压影响很小.与传统高电源电压基准相比,该电路提高了输出电压的精度和稳定性,具有较大的电流驱动能力,完全可以作为芯片内部电源使用.     

AP8022构成的ABS机开关电源原理与检修

市面上流行的山寨中九接收机品牌众多,采用的开关电源设计方案也不尽相同,有分立元件构成的,也有采用五花八门电源管理芯片构成的,集信V4黑盒子中九专用接收机开关电源采用了小功率电源芯片AP8022。电源芯片AP8022内部集成有电流型PWM(脉冲宽度调制)控制器、固定频率为55KHz的振荡器和击穿电压为730V的高压功率场效应管。该电源芯片内部还集成有过热、过压、过流保护电路和用于电源启动的高压电流源。以AP8022为核心元件构成的开关电源具有输入电压适应范围宽(85-265V)、电源转换效率高、外围电路简捷、成本低廉等特点。AP8022引脚功能为:①、②脚内置场效应开关管源极,在电路板上接地端,③脚反馈输入端,④脚供电端,⑤-⑧脚接内部场效应开关管漏极。附图为集信V4中九专用接收机开关电源电路原理图。     

基于电池供电的双路隔离反激开关电源设计

针对便携式医疗康复设备领域中电池供电、高隔离度和高电压输出的要求,设计了一款新型低输入电压供电、双路高压输出隔离的开关电源。该设计采用锂电池供电,采用基于占空比＜50%的电流型脉宽调制控制芯片UC3845的反激拓扑结构和光耦反馈网络电路,实现双路隔离正负高压电源输出。电源输入电压为10～14 V,输出电压为双通道+35/-35 V隔离,功率为14 W,效率是75%,电源模块面积为65 mm×40 mm。仿真与实际测试结果表明,该电源可实现正负高压电源隔离输出。     

36kV/10kW CO2激光器充电电源的研制

为了改善现有CO2激光器工频LC谐振充电时充电电压随激光器工作频率升高而降低、影响激光输出的稳定性和光束质量,不利于装置的小型化和轻量化的问题。采用全桥逆变结构和串联谐振软开关电路,研究了36kV/10kW高频高压充电电源。该电源系统采用三相380V交流电作为供电系统,大功率智能功率模块作为全桥逆变电路。逆变交流信号经串联谐振电路及高频脉冲变压器得到高压脉冲信号,高压脉冲经整流给负载电容充电,电源应用电压电流双闭环控制系统,输出电压、电流经采样及放大后,反馈到电源控制芯片SG3525,芯片SG3525通过判断反馈信号的大小,控制输出脉冲宽度调制驱动信号的占空比。激光器放电频率为25Hz时,电源输出电压为37kV,峰值输出功率为13.05kW,充电效率为0.826。结果表明,该高频高压充电电源适合用作CO2激光器的高压充电电源。     

TM0165R构成的数字机开关电源原理与检修

TM0165R是深圳天微电子有限公司生产的普通隔离型AC-DC电源芯片,电源电压输出控制方式是电流型脉宽调制(PWM).其内部集成650V耐高压功率开关管、偏置电路、软启动控制电路、电压基准电路及低电压锁定、复位电路,有完善的过压、过流、过载、过温保护,由TM0165R构成的开关电源具有很多优点,如:芯片外围电路设计简单;在待机模式下,通过降低工作频率来降低功耗同时输出稳定的工作电压;在过压或由短路引起的过载等失效模式下,芯片通过内部的保护电路使芯片切换到重启动模式;内部精密电流峰值控制,变压器的尺寸和次级整流二极管可以变得更小,以降低整个系统成本等,因而TM0165R被广泛应用于充电器、适配器、LED照明电源及DVD、DVB机的内置开关电源系统.下面以长虹非常6+1双模接收机开关电源为例,对其原理进行分析.附图为长虹非常6+1双模接收机开关电源电路原理图.     

基于LM5175的Buck-Boost车用开关电源设计

针对一款应用于新能源汽车的电机驱动控制器,设计了一种基于TI公司的电源芯片LM5175的4开关Buck-Boost开关电源。根据车载情况对电源的要求确定输入输出电压范围、电流范围、开关频率,进而选择合理的输入输出电容、电感、MOSFET等元器件,完成了电源芯片外围电路的搭建。绘制开关电源系统的伯德图对开关电源的工作稳定性进行分析,优化开关频率等参数。通过相同负载不同输入电压和相同输入电压不同负载的两组实验验证,开关电源可稳定输出目标电压以及开关电源效率。     

光缆绝缘电阻检测系统的电源设计

对通信光缆绝缘电阻进行测量的前站所需电源是由监测站通过金属护层与大地构成的回路以负电压远端提供取得,前站系统需要 5V电源工作。使输入前站的负电压以较高的转换效率转换成稳定的 5V电压以供前站正常工作是前站设计要解决的首要问题。设计采用LT1111 DC/DC转换芯片控制驱动的开关电源,完成负电压转正电压来实现前站的供电需要。该电源具有电路简单,体积小,输出稳定等优点。电源可完成任意负电压输入 5V输出,最大输出电流100mA,纹波在2%左右,转换效率达到88%。     

一种1024级灰度大电容负载的LCD驱动芯片设计

设计了一种基于动态扫描原理的液晶显示(LCD)驱动芯片。该芯片为高压CMOS数模混合集成电路并支持输出频率可选功能。芯片输入数据频率为13.5MHz,输出1 024级256列模拟电压信号直接驱动LCD,输出电压幅度可达12V以上。负载为200pF时,最大摆幅上升/下降时间小于5μs。芯片采用新加坡特许半导体(Chartered)0.35μm、18V高压工艺设计,并进行了仔细的版图设计以减小匹配误差,仿真结果显示电路性能完全满足设计指标要求。     

单片集成直流-直流转换器的效率提高方法

采用SMIC 0.13μm CMOS工艺,设计实现了开关频率达到250 MHz,单片集成的降压型电源转换器。为了提高电源转换效率,该转换器中的片上电感采用非对称性设计方法,提高了电感的品质因数。采用了高密度片上滤波电容来稳定输出电压,同时对单位电容尺寸的优化设计减小了电容的等效串联电阻以及输出电压纹波。测试结果表明,芯片输入电压为3.3 V,当输出2.5 V电压时,峰值效率达到了80%,最大输出电流达到270 mA;当输出1.8 V电压时,峰值效率达到了70%,最大输出电流达到400 mA。     

A high-performance ZVS full-bridge DC-DC 0-50-V/0-10-A power supplywith phase-shift control

This paper presents a high-performance DC-DC switching mode power supply designed to deliver a regulated 0-50 V/0-10 A output. The proposed power supply is based on a modified version of the zero-voltage switching (ZVS) full-bridge (FB) phase-shift DC-DC converter, which incorporates commutation auxiliary inductors to provide ZVS for the entire load range as well as a commutation aid circuit to clamp the output diode voltage. The control strategy is based on two control loops operating in cascade mode. The inner loop maintains a regulated output current, whereas the external voltage loop regulates the output voltage, independently of load and input-voltage changes. In order to obtain a high-reliability converter, the control circuit has been implemented using just two integrated circuits (ICs). The phase-shift regulator UC3875 IC generates the gate drive signal to the MOSFET's. The control loop regulators are implemented using the TL074 IC. A theoretical analysis was conducted, and experimental results were obtained for a 0-50 V/0-10 A power supply operating at 100 kHz     

Effective parameter extraction using multiple-objective function for VLSI circuits

In this paper an input stage and an output stage are presented for application in low-voltage CMOS operational amplifiers. The input stage operates in strong inversion and has a rail-to-rail common-mode input voltage range. The transconductance (g _m ) is insensitive to the common-mode input voltage. The class AB output stage has a rail-to-rail output range. A class AB control circuit prevents any transistors in the output stage from switching off. This improves the large-signal high-frequency behavior and the step response of the amplifier. A complete two-stage Op Amp employing the proposed input and output stages was realized in a semi-custom CMOS process with minimum channel lengths of 10µm and transistor threshold voltages of approximately 0.7 V. The measured minimum supply voltage is 2.5 V. The measured input voltage range exceeds the supply rails and the output voltage reaches both rails within 130 mV. The unity-gain bandwidth of the complete Op Amp is severely limited by the long channel lengths. Simulations show that a unity-gain bandwidth of 7 MHz is feasible if 2.5µm channel lengths are used.     

A 120-W Boost Converter Operation Using a High-Voltage GaN-HEMT

A boost converter with a 940-V/4.4 A GaN-HEMT as the main switching device was demonstrated to show the possibility of using high-voltage GaN-HEMTs in power electronic applications. The demonstrated circuit achieved an output power of 122 W and a power efficiency of 94.2% under a drain peak voltage as high as 350 V and a switching frequency of 1 MHz. The dual field-plate structure realized high-voltage switching operation with high power efficiency as dynamic on-resistance was suppressed by an increase of the current collapse phenomena.     

基于ATMEGA16的开关电源设计与制作

电源广泛应用于各种电子设备及电子电路中。以ATMEGA16单片机为控制核心,设计并制作了具有输出电压步进可调的开关电源。其硬件由整流、滤波、单片机供电电源、DC-DC变换及LED显示组成。经实验测定,输出电压0～9.9V步进0.1V可调,输出电流1.5A,当输出电压9V、输出电流1.5 A时,电压调整率小于0.67%,效率可达78.78%。     

A monolithic quad line driver for industrial applications

The device described in this paper is a new quad line driver to be used in the hostile and noisy industrial environment and developed in mixed technology (BCD: Bipolar, CMOS, DMOS). It consists of four independent line drivers, each of which has a rail-to-rail push-pull output stage realized with power DMOS transistors connected in half bridge configuration. Even though the device is designed to be used primarily in the output cards of programmable controllers, it is a general purpose device, since it can drive any kind of load (resistive, capacitive, or inductive) with an output current of 100 mA. The novel structure of the top driver allows full protection of the output stage against any kind of short circuits and/or overloads, providing a linear current limitation. Furthermore, when a channel is tristated, for every applied voltage ranging from ground to the supply voltage, virtually zero current is absorbed from the output. An innovative high efficiency central charge pump circuit has also been designed and implemented, making both a very wide supply voltage operation (6-50 V) and high switching frequency (up to 500 KHz) possible, The device can also be used as a receiver since the input voltage can swing from -10-50 V     

基于数字电位器的可编程电压基准源设计

在电子设计中为了灵活准确地设置电压基准值,设计了可编程电压基准源电路。详细阐述了电路的设计思路和工作原理。利用5片2.048 V带隙电压基准源芯片串联产生10.24 V电压作为基准。随后创新地利用单片机控制1024抽头的数字电位器对基准电压进行分压,结合精准运放的反向放大电路,最后输出-10.24 V到10.22 V的可编程精准电压值,输出电压分辨力达20 mV。测试结果表明,该电路具有输出线性度好、精度高、性能稳定等优点。     

A 2 W CMOS Hybrid Switching Amplitude Modulator for EDGE Polar Transmitters

This paper presents a hybrid switching amplitude modulator for class-E2 EDGE polar transmitters. To achieve both high efficiency and high speed, it consists of a wideband buffered linear amplifier as a voltage source and a PWM switching amplifier with a 2 MHz switching frequency as a dependent current source. The linear amplifier with a novel class-AB topology has a high current-driving capability of approximately 300 mA with a bandwidth wider than 10 MHz. It can also operate on four quadrants with very low output impedance of about 200 at the switching frequency attenuating the output ripple voltage to less than 12 . A feedforward path, a PWM control, and a third-order ripple filter are used to reduce the current burden of the linear amplifier. The output voltage of the hybrid modulator ranges from 0.4 to 3 V for a 3.5 V supply. It can drive an RF power amplifier with an equivalent impedance of 4 up to a maximum output power of 2.25 W with a maximum efficiency of 88.3%. The chip has been fabricated in a 0.35 m CMOS process and occupies an area of 4.7 .     

基于UC3842的三路输出小功率开关电源设计

针对通信供电系统高效率、小型化、集成化、智能化以及高可靠性的发展趋势,本文以UC3842为PWM 控制器,采用电阻,TL431和线性光耦等元器件构成电压采样反馈电路,设计了一种48V转+5V, 15V开关稳压电源,主输出（+5VDC@2A）：电压精度为0.5%,纹波为0.4％（峰峰值20mV）;辅助输出1（+15VDC@500mA）：电压精度为2％（14.7V）,纹波为0.13％（峰峰值20mV）;辅助输出2（-15VDC@500mA）：电压精度为2％（-14.7V）,纹波为0.33％（峰峰值50mV）;具有精度高,纹波小,效率高,性能可靠等优点,可广泛应用于各类小功率变换场合。     

Design of a 1-MHz LLC Resonant Converter Based on a DSP-Driven SOI Half-Bridge Power MOS Module

In this paper, the design of a 1-MHz LLC resonant converter prototype is presented. Aiming to provide an integrated solution of the resonant converter, a half-bridge (HB) power metal oxide semiconductor (MOS) module employing silicon-on-insulator technology has been designed. Such a technology, which is suitable for high-voltage and high-frequency applications, allows enabling HB power MOSFET modules operating up to 3MHz with a rated voltage of 400V. The power device integrates the driving stages of the high-side and low-side switch along with a latch circuit used to implement over-voltage/over-current protection. The module has been designed to be driven by a digital signal processor device, which has been adopted to perform frequency modulation of the resonant converter. By this way, output voltage regulation against variations from light- to full-loaded conditions has been achieved. The issues related to the transformer design of the LLC resonant converter are discussed, too. Owing to the high switching frequency experienced by the converter, 3F4 ferrite cores have been selected for their low magnetic power losses between 0.5 and 3 MHz and core temperatures up to 120degC. The resonant converter has been designed to operate in an input voltage range of 300-400V with an output voltage of 12V and a maximum output power of 120W. Within these design specifications, a performance analysis of the LLC converter has been conducted, comparing the results obtained at the switching frequencies of 500kHz and 1MHz. A suitable model of the LLC resonant converter has been developed to aid the prototype design.